Infineon Technologies CY7C1481BV33-133BZXC

Overview

CY7C1481BV33-133BZXC from Infineon Technologies (formerly Cypress) is a 72-Mbit (2M × 36) synchronous flow-through SRAM with 133 MHz bus operation, 6.5 ns clock-to-output delay, 3.3 V core supply (VDD), 2.5/3.3 V I/O supply (VDDQ), and JEDEC-compliant TQFP-100 package. It serves as high-speed secondary cache memory in Pentium-class microprocessor systems requiring burst-mode addressing and low-latency synchronous access.

For engineers reviewing the CY7C1481BV33-133BZXC datasheet, CY7C1481BV33-133BZXC pinout, CY7C1481BV33-133BZXC application, or CY7C1481BV33-133BZXC equivalent, key selection criteria include burst sequence mode (interleaved/linear), synchronous address strobe support (ADSP/ADSC), byte-write granularity (BWx/BWE), ZZ sleep control, and JTAG boundary-scan compatibility for system-level testability.

Technical Context

The device implements a 2-bit on-chip wraparound burst counter that latches A[1:0] at the rising edge of CLK when ADSP or ADSC is asserted, enabling automatic address incrementing during burst cycles. All synchronous inputs-including addresses, CE1/CE2/CE3, ADSP/ADSC/ADV, BWx, BWE, GW, and MODE-are registered on the positive clock edge.

Asynchronous controls OE and ZZ operate independently of CLK: OE enables tri-state output control during read cycles, while ZZ places the device in low-power sleep mode with data retention. The SRAM supports both interleaved (Pentium-compatible) and linear burst sequences selected via the static MODE pin, with address advancement governed by ADV assertion timing relative to CLK.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), RoHS-compliant, Pb-free, JEDEC standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with AS7C3256A-133JCIN and IS61WV102436B-133TQLI, CY7C1481BV33-133BZXC uniquely delivers 72-Mbit density with dual-voltage I/O, programmable burst order, and JTAG testability-critical for high-integrity cache subsystems requiring field-upgradeable timing behavior and production test coverage.

Availability

CY7C1481BV33-133BZXC is available at Aetrix Electronics and suitable for Intel Pentium-based embedded controllers, industrial real-time PLCs, network packet buffering systems, and avionics data acquisition modules requiring stable component supply, long-lifecycle support, and JEDEC-standard packaging.

Supply support for CY7C1481BV33-133BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, memory solutions, and security ICs.

This device belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for high-performance cache and buffer applications in microprocessor-based systems demanding deterministic timing, burst-mode efficiency, and robust testability.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst sequence order: HIGH or floating enables Pentium-compatible interleaved bursts; LOW (tied to GND) enables linear bursts. It is a static strap pin-must remain stable during operation and cannot be toggled dynamically. Internal pull-up ensures default interleaved mode if left unconnected.

Does CY7C1481BV33-133BZXC support both 2.5 V and 3.3 V I/O interfaces simultaneously?

No-VDDQ is a single supply pin accepting either 2.5 V or 3.3 V, not both. The selected voltage applies to all DQ and DQP I/O banks. System design must choose one I/O voltage and bias VDDQ accordingly; mixing voltages across DQ groups is not supported.

How does the ZZ sleep mode affect timing and power consumption?

When ZZ is driven HIGH, the device enters non-time-critical sleep with data retention. Core current drops to ≤150 mA CMOS standby level. All outputs go high-impedance, and synchronous inputs are ignored until ZZ returns LOW. No clock stabilization delay is required upon wake-up.

Is JTAG boundary scan available on the TQFP-100 package?

No-JTAG pins (TDO, TDI, TMS, TCK) are only implemented on the 119-ball BGA variant. The TQFP-100 package omits these pins entirely; boundary scan functionality is unavailable in this package option.