Infineon Technologies CY7C1482BV33-200BZI

Overview

CY7C1482BV33 from Cypress Semiconductor is a 72-Mbit pipelined synchronous SRAM configured as 4M × 18, operating at 200 MHz with 3.3 V core supply and 2.5/3.3 V I/O compatibility. It features registered inputs/outputs, synchronous self-timed writes, user-selectable Intel Pentium®-compatible burst modes, and IEEE 1149.1 JTAG boundary scan. Used in high-speed secondary cache subsystems for embedded processors requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1482BV33 datasheet, CY7C1482BV33 pinout, CY7C1482BV33 application, or CY7C1482BV33 equivalent, this page delivers verified timing parameters (tCO = 3.0 ns), burst control logic (ADSP/ADSC/ADV), byte-write architecture (BWA–BWD + BWE + GW), sleep mode (ZZ), and FBGA-165 package mapping - all confirmed from Cypress Document 001-15145 Rev. *L.

Technical Context

The device implements a 2-bit synchronous wraparound burst counter clocked by CLK, with address latching triggered by either ADSP (processor strobe) or ADSC (controller strobe), while ADV controls internal address incrementation. CE1 (active-low), CE2 (active-high), and CE3 (active-low) enable depth-expansion across multiple devices with hierarchical chip select logic.

All data inputs and outputs are registered on the rising edge of CLK; OE operates asynchronously to tri-state I/O pins, and ZZ provides asynchronous sleep entry with data retention. Byte write granularity is controlled via four independent BWx signals qualified by BWE, while GW forces full-word writes regardless of BWx states.

Key Specifications

Pinout & Package

The CY7C1482BV33 is packaged in a non-Pb-free 165-ball fine-pitch ball grid array (FBGA) measuring 15 mm × 17 mm × 1.4 mm, optimized for high-density PCB layouts and thermal performance in cache modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with IS61WV102418BLL-200BLI and MT55LSD256H28A-200:J, the CY7C1482BV33 uniquely combines 72-Mbit density, Intel-compatible burst sequencing, per-byte write control, and JTAG testability - making it irreplaceable in legacy CPU cache and FPGA-based burst-buffer applications requiring exact timing and feature alignment.

Availability

CY7C1482BV33 is available at Aetrix Electronics and suitable for high-speed embedded cache, network packet buffering, industrial motion control, and ATE pattern memory applications requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1482BV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

The CY7C148x BV33 product line was designed specifically for high-performance synchronous cache and buffer applications in CPU- and FPGA-based systems requiring deterministic timing, burst efficiency, and robust testability.

FAQ

What is the function of the MODE pin on CY7C1482BV33?

The MODE pin selects burst addressing sequence: logic HIGH configures interleaved burst order compatible with Intel Pentium® processors, while logic LOW selects linear burst order for architectures like PowerPC or custom FPGA controllers. It is sampled synchronously on the rising edge of CLK during address strobe assertion (ADSP or ADSC active), and remains latched for the duration of the burst cycle.

Can CY7C1482BV33 operate with only 2.5 V I/O supply?

Yes - the device supports 2.5 V or 3.3 V I/O operation independently of its 3.3 V core supply (VDD). VDDQ must be set to the chosen I/O voltage, and all I/O pins (DQ/DQP, OE, etc.) meet JEDEC JESD8-5 specifications at either voltage. No level-shifting circuitry is required when interfacing with 2.5 V FPGAs or ASICs.

How does the ZZ sleep mode affect timing and power consumption?

When ZZ is driven HIGH, the device enters non-time-critical sleep mode: core current drops to ≤120 mA (CMOS standby), all outputs go high-impedance, and internal registers retain state. Clock (CLK) may be stopped or gated; wake-up occurs synchronously on the next rising CLK edge after ZZ returns LOW, with no additional latency beyond standard access timing.

Is JTAG boundary scan supported on CY7C1482BV33, and how is it enabled?

Yes - IEEE 1149.1 JTAG is fully implemented and enabled by default. TCK, TMS, TDI, and TDO pins are assigned to dedicated balls in the FBGA-165 package. The JTAG chain remains active regardless of CE or ZZ state, allowing board-level interconnect testing even when the SRAM is deselected or in sleep mode.