Infineon Technologies CY7C1512AV18-167BZC
- Part No.:
- CY7C1512AV18-167BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1512AV18-167BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,744
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Product details
Overview
CY7C1512AV18-167BZC from Cypress Semiconductor is a 4M × 18 (72-Mbit), 1.8V QDR® II SRAM with dual independent read/write ports, 167 MHz maximum operating frequency, 1.5-cycle read latency (DLL enabled), and HSTL I/O interface. It delivers concurrent burst transfers of two 18-bit words per access and supports depth expansion via RPS/WPS control - deployed in high-speed packet buffering for network switches and routers.
For engineers reviewing the CY7C1512AV18-167BZC datasheet, CY7C1512AV18-167BZC pinout, CY7C1512AV18-167BZC application, or CY7C1512AV18-167BZC equivalent, key selection criteria include DDR timing compliance, echo clock (CQ/CQ) support for skew-critical capture, DLL-enabled latency mode, and 165-ball FBGA (15 × 17 × 1.4 mm) mechanical compatibility.
Technical Context
This QDR II SRAM implements fully synchronous, pipelined architecture with physically separate read and write data paths - eliminating bus turnaround overhead. It uses rising edges only of K/K clocks for input latching and C/C clocks for output registration, with echo clocks CQ/CQ synchronized to C/C for precise data capture at the controller.
The device supports both DLL-on (1.5-cycle read latency, up to 250 MHz) and DLL-off (1-cycle latency, up to 167 MHz) modes via DOFF pin control. Internal organization as two 2M × 18 arrays enables efficient address multiplexing and full data coherency across concurrent read/write operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4M × 18 configuration) |
| Max Clock Frequency | 167 MHz (DLL disabled); supports 250 MHz when DLL enabled |
| Read Latency | 1.5 cycles (DLL enabled); 1 cycle (DLL disabled via DOFF = LOW) |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V; core VDD = 1.8 V ±0.1 V |
| Data Interface | Double Data Rate (DDR) on both read and write ports; 2-word burst per access |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm); Pb-free option available |
| Timing Reference | Separate K/K (input) and C/C (output) clock pairs; CQ/CQ echo clocks provided |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edges of K/K; 18-bit parallel data path for write port |
| Q[17:0] | Synchronous read data outputs | Driven on rising edges of C/C; tristated automatically when RPS deasserted |
| RPS / WPS | Read/Write Port Select (active LOW) | Enables independent port activation; critical for depth expansion and port isolation |
| BWS[1:0] | Byte Write Select (active LOW) | BWS0 controls D[8:0]; BWS1 controls D[17:9]; enables partial-word writes without read-modify-write |
| K / K | Positive/Negative input clocks | Edge-triggered for all synchronous inputs (address, control, data); rising-edge sampling only |
| C / C | Positive/Negative output clocks | Control Q[17:0] output timing; used with CQ/CQ to deskew flight time across memory subsystem |
| CQ / CQ | Echo clocks referenced to C/C | Free-running, phase-aligned copies of C/C; simplify high-speed data capture at controller |
| ZQ | Output impedance calibration input | Connects to external resistor to ground to tune Q[17:0] and CQ/CQ output drive strength |
| DOFF | DLL disable control (active LOW) | Pulls LOW to force QDR I mode (1-cycle latency, ≤167 MHz); pull-up required for QDR II operation |
Key Features
| Feature | Design Value |
|---|---|
| Independent Read/Write Ports | Eliminates bus turnaround delay; enables true concurrent access without arbitration or contention |
| 2-Word Burst Architecture | Delivers two 18-bit words per clock cycle - doubles effective bandwidth versus single-word devices |
| Integrated Delay Lock Loop (DLL) | Enables 1.5-cycle read latency and precise internal timing alignment for 250 MHz operation |
| HSTL-Compatible I/O | Supports 1.4–1.8 V VDDQ with programmable drive strength; compatible with industry-standard HSTL Class I receivers |
| JTAG 1149.1 Test Access Port | Enables boundary-scan testing and system-level debug without additional test fixtures |
Applications
| Network Packet Buffering | High-Speed Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches with sub-10 ns access requirements. IC Role / Device Role / Timing Role: Dedicated QDR II SRAM acting as low-latency, concurrent-access buffer between ingress parser and egress scheduler. Use Value: 1.5-cycle latency and echo clocks (CQ/CQ) enable deterministic 167 MHz+ throughput with zero wait states in pipeline-constrained switch ASIC interfaces. |
Use Scenario: Interfacing with multi-gigabit SerDes-based switch fabric controllers requiring burst-aligned, non-blocking memory access. IC Role / Device Role / Timing Role: Dual-port SRAM providing simultaneous read (for scheduling decisions) and write (for packet enqueue) to fabric crossbar logic. Use Value: Separate RPS/WPS and BWS[1:0] signals allow independent port control and byte-granular writes - reducing fabric arbitration overhead by 35% vs. common-I/O SRAMs. |
| Telecom Line Card Buffering | Test Equipment Pattern Memory |
|
Use Scenario: Holding real-time traffic shaping tables and queue-depth counters in OC-192/STM-64 line cards with strict jitter tolerance. IC Role / Device Role / Timing Role: Synchronous burst SRAM synchronized to line-rate clock domain via K/K and C/C with DLL compensation. Use Value: ZQ-calibrated HSTL outputs maintain signal integrity across 15 cm backplane traces; CQ/CQ eliminate setup/hold violations at 500 MT/s DDR rates. |
Use Scenario: Storing high-fidelity digital stimulus and expected response patterns in automated test equipment (ATE) for SoC validation. IC Role / Device Role / Timing Role: Deterministic-latency memory delivering synchronized bursts to pattern generator DACs and comparator inputs. Use Value: DLL-on mode ensures <±50 ps read data jitter over temperature; DOFF pin allows fallback to QDR I timing during calibration sweeps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-bit bus width (2M × 36), 10 ns access, 1.5V core, no integrated DLL | Requires external DLL or phase-aligned clock generation; limited to ≤133 MHz sustained DDR rate | Select when 36-bit interface matches controller bus width and DLL-free timing simplifies board layout |
| ISSI IS61WV102418B | Single-port, 1M × 18, 10 ns async access, 3.3V/2.5V I/O, no DDR or echo clocks | No concurrent read/write; lacks CQ/CQ, K/K, C/C timing infrastructure | Use only in cost-sensitive, non-pipelined systems where bandwidth < 200 MB/s suffices |
Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1512AV18-167BZC uniquely delivers DLL-synchronized 1.5-cycle latency, echo-clock-assisted capture, and true dual-port concurrency - making it irreplaceable in QDR II–compliant switch fabric and telecom line card designs.
Availability
CY7C1512AV18-167BZC is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, and telecom line card buffering requiring stable component supply across extended product lifecycles.
Supply support for CY7C1512AV18-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.
CY7C1512AV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic-latency, concurrent-access memory subsystems in packet-switched infrastructure.
FAQ
What is the function of the DOFF pin on CY7C1512AV18-167BZC?
The DOFF pin disables the internal Delay Lock Loop when pulled LOW, forcing the device into QDR I mode with 1-cycle read latency and maximum 167 MHz operation. For QDR II mode (1.5-cycle latency, up to 250 MHz), DOFF must be pulled HIGH via ≤10 kΩ resistor to VDDQ. This pin directly controls DLL activation and cannot be left floating.
How does the ZQ pin affect output drive strength?
ZQ connects to an external resistor (RQ) tied to ground to calibrate output impedance of Q[17:0], CQ, and CQ pins to 0.2 × RQ. If RQ = 50 Ω, outputs are tuned to 10 Ω. Alternatively, tying ZQ to VDDQ enables minimum-impedance mode. Connecting ZQ to GND or leaving it unconnected violates absolute maximum ratings and may damage the device.
Can CY7C1512AV18-167BZC operate with only one clock pair?
Yes - it supports Single Clock Mode using only K/K to control both input and output registers. In this mode, C/C are ignored, and Q[17:0] timing is referenced to K/K. However, echo clocks (CQ/CQ) remain active and synchronized to K/K, preserving their utility for capture timing even without dedicated output clocks.
What is the purpose of BWS[1:0] in byte write operations?
BWS0 and BWS1 are active-LOW byte write selects that gate corresponding 9-bit segments of D[17:0]: BWS0 enables D[8:0], BWS1 enables D[17:9]. When either is deasserted during a write, that byte remains unchanged in memory - enabling efficient partial-word updates without read-modify-write cycles, critical for header field manipulation in packet processing.
CY7C1512AV18-167BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1512AV18-167BZC FAQ
1.How can I place an order for CY7C1512AV18-167BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1512AV18-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1512AV18-167BZC reliable?
The price and inventory of CY7C1512AV18-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512AV18-167BZC is usually 5 days.
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Once your CY7C1512AV18-167BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1512AV18-167BZC?
For technical support, including CY7C1512AV18-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512AV18-167BZC requirements.
6.How does Aetrix verify that CY7C1512AV18-167BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1512AV18-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512AV18-167BZC meets industry standards.
7.What is the process for return or replacement of CY7C1512AV18-167BZC?
All CY7C1512AV18-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512AV18-167BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1512AV18-167BZC part is unused and in its original packaging.
Return procedure for CY7C1512AV18-167BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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