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Infineon Technologies CY7C1512AV18-200BZC

Part No.:
CY7C1512AV18-200BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1512AV18-200BZC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,540

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Product details

Overview

CY7C1512AV18-200BZC from Cypress Semiconductor is a 4M × 18 (72-Mbit), 1.8V QDR® II SRAM with dual independent read/write ports, 200 MHz clock operation (400 MT/s DDR), 1.5-cycle read latency with DLL enabled, and HSTL I/O compatible with VDDQ = 1.4–1.8V. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1512AV18-200BZC datasheet, CY7C1512AV18-200BZC pinout, CY7C1512AV18-200BZC application, or CY7C1512AV18-200BZC equivalent, key selection criteria include burst depth (2-word), echo clock support (CQ/CQ), byte write select (BWS[1:0]), DLL-controlled latency mode, and 165-ball FBGA (15 × 17 mm) mechanical compatibility.

Technical Context

The CY7C1512AV18-200BZC implements a synchronous pipelined QDR II architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its dual-clock domain uses K/K for address/data capture and C/C for output timing, enabling precise skew management via echo clocks CQ/CQ referenced to C/C.

Internally organized as two 2M × 18 arrays, it supports depth expansion via RPS/WPS port selects and byte-level writes using BWS[1:0] to control D[8:0] and D[17:9]. The DLL enables 1.5-cycle read latency at 200 MHz; when disabled via DOFF, it reverts to QDR I timing with 1-cycle latency up to 167 MHz.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (4M × 18 configuration)
Operating Frequency200 MHz clock → 400 MT/s DDR data rate
Read Latency1.5 cycles with DLL enabled; 1 cycle with DOFF = LOW
I/O VoltageVDDQ = 1.4 V to 1.8 V; supports HSTL Class I
Burst LengthFixed 2-word burst per access on both ports
Package165-ball FBGA (15 × 17 × 1.4 mm; ball pitch 1.0 mm)
Core SupplyVDD = 1.8 V ± 0.1 V

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm footprint, 1.4 mm height, 1.0 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous write data inputLatched on rising edges of K/K; supports byte-write via BWS[1:0]
Q[17:0]Synchronous read data outputDriven on rising edges of C/C; tristated automatically after burst
RPS / WPSPort enable controlsActive-LOW synchronous selects for independent read/write initiation
BWS[1:0]Byte write selectActive-LOW signals controlling D[8:0] (BWS0) and D[17:9] (BWS1)
K / KInput clock pairRising edges latch all synchronous inputs (address, data, control)
C / COutput clock pairRising edges drive Q[17:0]; used with CQ/CQ for flight-time deskew
CQ / CQEcho clocksFree-running outputs synchronized to C/C; simplify high-speed data capture
ZQImpedance calibration inputConnects to external resistor to ground to tune Q/D output impedance to 0.2×RQ
DOFFDLL disable controlActive-LOW pin forcing QDR I mode (1-cycle latency, ≤167 MHz)
TCK/TMS/TDI/TDOJTAG boundary-scan interfaceIEEE 1149.1 compliant for test and debug

Key Features

FeatureDesign Value
Independent read/write portsEliminates bus turnaround delay; enables true concurrent access without arbitration
2-word DDR burst architectureDelivers 36 bits per clock cycle (18-bit × 2) on each port at 200 MHz
Programmable DLL latency modeConfigurable 1.5-cycle (DLL ON) or 1-cycle (DOFF = LOW) read latency
HSTL Class I I/O with ZQ calibrationEnsures signal integrity across 400 MT/s interfaces; supports impedance matching to 50 Ω traces
Depth expansion supportRPS/WPS allows stacking multiple devices with independent port control

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet switch ASIC interfaces.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer between MAC and traffic manager blocks.

Use Value: Concurrent 400 MT/s read/write eliminates serialization bottlenecks, enabling full line-rate forwarding.

Use Scenario: Frame buffering in OC-192 SONET/SDH framer modules requiring deterministic access timing.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as elastic store for jitter compensation and rate adaptation.

Use Value: 1.5-cycle DLL latency ensures sub-8 ns read response time aligned to system clock domain.

Baseband Processing CacheTest Equipment Pattern Memory

Use Scenario: Temporary storage of FFT coefficients and channel estimation data in LTE eNodeB baseband processors.

IC Role / Device Role / Timing Role: Low-power, high-bandwidth scratchpad memory interfaced to multi-core DSP subsystems.

Use Value: 1.8V core + 1.4V I/O reduces dynamic power vs. 2.5V QDR I parts while maintaining 400 MT/s throughput.

Use Scenario: Storing stimulus/response vectors in high-speed ATE systems performing parallel device testing.

IC Role / Device Role / Timing Role: Deterministic-access pattern memory synchronized to tester clock and strobe signals.

Use Value: Echo clocks CQ/CQ enable precise capture alignment across 16+ parallel DUT channels.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-bit bus width (2M × 36); same 200 MHz/400 MT/s, but no DOFF pin or DLL disable modeRequires redesign for x18-to-x36 bus mapping; lacks QDR I fallback modeSelect only when 36-bit interface and guaranteed DLL-on operation are required
ISSI IS61WV102418BAsynchronous 1M × 18 SRAM; 15 ns access, no DDR, no echo clocks, no DLLLower bandwidth (≤67 MHz effective), no concurrent read/write, unsuitable for >1 Gbps interfacesConsider only for cost-sensitive, non-real-time control-plane buffers where latency tolerance >20 ns

Compared with IDT72T3615L10BG and IS61WV102418B, the CY7C1512AV18-200BZC uniquely combines x18 DDR concurrency, programmable DLL latency, echo-clock–assisted capture, and 165-ball FBGA compatibility-making it optimal for upgrade paths from QDR I or migration from legacy asynchronous SRAM in high-speed networking.

Availability

CY7C1512AV18-200BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing cache requiring stable component supply and long-term industrial availability.

Supply support for CY7C1512AV18-200BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems.

The QDR® II SRAM product line targets high-speed deterministic memory interfaces in networking infrastructure, specifically addressing bandwidth-constrained applications requiring zero-turnaround concurrent access.

FAQ

What is the function of the DOFF pin on CY7C1512AV18-200BZC?

The DOFF (DLL Turn Off) pin is an active-LOW control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. For standard QDR II operation at 200 MHz with 1.5-cycle latency, DOFF must be held HIGH via a ≤10 kΩ pull-up to VDDQ.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin calibrates the output driver impedance of Q[17:0], CQ, and CQ to match the PCB trace impedance. Connecting ZQ to a precision resistor (e.g., 50 Ω) to ground sets output impedance to 10 Ω (0.2 × RQ). This minimizes reflections and improves eye diagram margins at 400 MT/s, especially critical in multi-drop or fly-by routing topologies.

Can CY7C1512AV18-200BZC operate in single-clock mode?

Yes - by connecting C and C to K and K respectively, the device enters single-clock mode. In this configuration, K/K clocks both input registers (D[17:0], A[20:0], RPS, WPS) and output registers (Q[17:0]). All timing references shift to K/K, and echo clocks CQ/CQ track K/K instead of C/C. This simplifies clock tree design but forfeits C/C deskew capability.

What is the purpose of BWS[1:0] in write operations?

BWS[1:0] are active-LOW byte write select signals that gate which 9-bit segments of D[17:0] are written: BWS0 controls D[8:0], BWS1 controls D[17:9]. When either is deasserted, the corresponding byte remains unaltered in memory. This enables efficient read-modify-write sequences without full-word reads, reducing bus traffic in partial-update scenarios like header editing in packet buffers.

CY7C1512AV18-200BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1512AV18-200BZC FAQ

1.How can I place an order for CY7C1512AV18-200BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1512AV18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1512AV18-200BZC reliable?

The price and inventory of CY7C1512AV18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512AV18-200BZC is usually 5 days.

3.What payment methods are accepted for CY7C1512AV18-200BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512AV18-200BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1512AV18-200BZC?

CY7C1512AV18-200BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1512AV18-200BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1512AV18-200BZC?

For technical support, including CY7C1512AV18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512AV18-200BZC requirements.

6.How does Aetrix verify that CY7C1512AV18-200BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1512AV18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512AV18-200BZC meets industry standards.

7.What is the process for return or replacement of CY7C1512AV18-200BZC?

All CY7C1512AV18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512AV18-200BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1512AV18-200BZC part is unused and in its original packaging.

Return procedure for CY7C1512AV18-200BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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