Infineon Technologies CY7C1512AV18-250BZC
- Part No.:
- CY7C1512AV18-250BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1512AV18-250BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1512AV18-250BZC from Cypress Semiconductor is a 4M × 18 (72-Mbit), 1.8V QDR® II SRAM with dual independent read/write ports, 250 MHz clock operation, 1.5-cycle read latency (DLL enabled), and DDR interfaces on both ports delivering 500 MT/s effective data rate. It implements synchronous pipelined burst architecture for high-bandwidth networking buffer applications requiring zero bus turnaround.
For engineers reviewing the CY7C1512AV18-250BZC datasheet, CY7C1512AV18-250BZC pinout, CY7C1512AV18-250BZC application, or CY7C1512AV18-250BZC equivalent, key selection criteria include 165-ball FBGA package compatibility, HSTL-18 I/O compliance, DLL-enabled timing mode, echo clock (CQ/CQ) support for source-synchronous capture, and depth expansion via RPS/WPS port selects.
Technical Context
This QDR II SRAM uses separate K/K input clocks for address/data capture and C/C output clocks for data launch, enabling precise DDR timing control and eliminating bus contention. Its internal architecture comprises two 2M × 18 memory arrays with multiplexed address latching on alternating K-clock edges.
The device supports both DLL-on (1.5-cycle read latency, up to 250 MHz) and DLL-off (1-cycle latency, QDR I mode, up to 167 MHz) operation via the DOFF pin. Echo clocks CQ/CQ are free-running and synchronized to C/C, simplifying high-speed data capture in multi-device systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4M × 18 = 72 Mbit; enables compact high-throughput buffering without external depth expansion |
| Max Clock Frequency | 250 MHz; supports 500 MT/s DDR transfers per port for aggregate 1 GB/s bandwidth |
| Read Latency | 1.5 cycles (DLL enabled); ensures deterministic timing for pipeline-aligned controller designs |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V; compatible with HSTL-18 Class I/II receivers and drivers |
| Core Voltage | VDD = 1.8 V ±0.1 V; defines stable low-power operation with tight supply tolerance |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm); provides signal integrity and thermal performance for dense PCB layouts |
| Interface Type | Double Data Rate (DDR) on both read and write ports; eliminates bus turnaround overhead in full-duplex systems |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edges of K/K; supports 2-word burst writes with byte-level granularity via BWS[1:0] |
| Q[17:0] | Synchronous read data outputs | Driven on rising edges of C/C; tristated automatically after burst completion when RPS deasserted |
| K, K | Positive/negative input clocks | Control all synchronous inputs (address, data, control); rising edges initiate read/write operations |
| C, C | Positive/negative output clocks | Reference timing for Q[17:0] output launch; used with CQ/CQ for flight-time deskewing |
| CQ, CQ | Echo clocks referenced to C/C | Free-running, source-synchronous clocks for receiver-side data capture alignment |
| RPS, WPS | Read/Write Port Selects | Active-low enables; allow independent port activation for depth expansion and interleaved access |
| BWS[1:0] | Byte Write Selects | Active-low controls D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes without read-modify-write overhead |
| DOFF | DLL Turn-Off Control | Active-low disables Delay Lock Loop; switches device to QDR I timing (1-cycle latency, ≤167 MHz) |
| ZQ | Output impedance calibration | Connect to resistor-to-ground (RQ) to set Q/CQ output impedance to 0.2×RQ; critical for HSTL signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| Separate Read/Write Ports | Eliminates bus turnaround delay and contention, enabling true concurrent read/write at full bandwidth |
| 2-Word Burst Architecture | Delivers two 18-bit words per access cycle-optimized for packet header + payload streaming in switch fabric buffers |
| Source-Synchronous Echo Clocks (CQ/CQ) | Enables reliable >500 MT/s data capture by compensating for board trace skew between controller and SRAM |
| HSTL-18 Compatible I/O | Supports 1.4–1.8 V VDDQ with programmable drive strength; meets JEDEC JESD8-15A for high-speed signaling |
| JTAG 1149.1 Test Access Port | Enables boundary scan testing and in-system debug without additional test fixtures or probes |
Applications
| Packet Buffering in Layer 2/3 Switches | High-Speed Network Interface Controllers |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in enterprise Ethernet switches operating at 10 Gbps line rate. IC Role / Device Role / Timing Role: Dual-port SRAM serving as non-blocking buffer memory with simultaneous read (transmit path) and write (receive path) access. Use Value: 72-Mbit capacity and 1 GB/s aggregate bandwidth sustain full wire-rate buffering without packet loss under bursty traffic loads. | Use Scenario: Acting as descriptor and status memory for 25G/100G NICs implementing RDMA over Converged Ethernet (RoCE). IC Role / Device Role / Timing Role: Synchronous burst SRAM providing low-latency, deterministic access to DMA descriptors and completion queues. Use Value: 1.5-cycle DLL-enabled read latency and echo-clock–based capture ensure timing closure at 250 MHz controller interface. |
| Telecom Line Card Buffers | Baseband Processing in 5G Radio Units |
Use Scenario: Buffering CPRI/OBSAI frames between fronthaul PHY and MAC layers in LTE/5G macro base stations. IC Role / Device Role / Timing Role: High-reliability SRAM with ECC-capable controller interface handling time-critical fronthaul transport packets. Use Value: 165-ball FBGA package and HSTL I/O support robust signal integrity across long backplane traces in carrier-grade chassis. | Use Scenario: Storing FFT/IFFT coefficients and intermediate results in massive MIMO digital beamforming engines. IC Role / Device Role / Timing Role: Low-latency, pipelined memory supporting parallel processing pipelines with strict real-time deadlines. Use Value: DLL-off mode (QDR I) provides guaranteed 1-cycle latency at 167 MHz for deterministic timing in safety-critical baseband chains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit (2M × 18), 100 MHz max frequency, LVDS I/O, no echo clocks | Lower bandwidth, differential signaling only; suited for legacy telecom systems with LVDS infrastructure | Select when system uses LVDS PHY and does not require >200 MHz operation or source-synchronous capture |
| ISSI IS61WV102418B | 18-Mbit (512K × 18), asynchronous SRAM, 15 ns access, single-port, CMOS I/O | No DDR, no burst, no DLL; lacks concurrency and bandwidth for modern packet processing | Select only for cost-sensitive, low-bandwidth control-plane memory where timing determinism is secondary |
Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1512AV18-250BZC delivers 4× higher density, 2.5× higher bandwidth, and integrated echo-clock timing-making it uniquely suitable for next-generation packet-switched infrastructure requiring deterministic, full-duplex memory access.
Availability
CY7C1512AV18-250BZC is available at Aetrix Electronics and suitable for packet buffering in Layer 2/3 switches, high-speed network interface controllers, and telecom line card buffers requiring stable component supply across multi-year production cycles.
Supply support for CY7C1512AV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1512AV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in packet-switched networking equipment where deterministic timing and concurrent read/write throughput are critical.
FAQ
What is the function of the DOFF pin on CY7C1512AV18-250BZC?
The DOFF (DLL Turn-Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. For standard QDR II operation at 250 MHz with 1.5-cycle latency, DOFF must be held HIGH via a ≤10 kΩ pull-up to VDDQ.
How does the ZQ pin affect output drive strength and signal integrity?
The ZQ pin calibrates the output impedance of Q[17:0] and CQ/CQ signals to match the system data bus. Connecting ZQ to a precision resistor (RQ) to ground sets output impedance to 0.2 × RQ. Direct connection to VDDQ enables minimum impedance mode. ZQ must never be left floating or tied to VSS, as this disables impedance control and risks signal integrity failure.
Can CY7C1512AV18-250BZC operate in single-clock mode, and how is it configured?
Yes-it supports single-clock mode using only K/K for both input registration and output launch (replacing C/C). To enable, tie C and C to K and K respectively, and configure the device to use K/K as the sole timing reference. In this mode, data output timing follows K/K edges, simplifying clock routing at the cost of reduced deskew capability versus dual-clock mode.
What is the purpose of the BWS[1:0] pins, and how do they enable byte-level writes?
BWS0 and BWS1 are active-low byte write selects that gate D[8:0] and D[17:9], respectively. During each 18-bit write burst, asserting either BWS pin allows corresponding byte lanes to be updated while leaving unselected bytes unchanged. This enables efficient partial-word writes-critical for modifying packet headers or status fields without full-word read-modify-write cycles.
CY7C1512AV18-250BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1512AV18-250BZC FAQ
1.How can I place an order for CY7C1512AV18-250BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1512AV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1512AV18-250BZC reliable?
The price and inventory of CY7C1512AV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512AV18-250BZC is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512AV18-250BZC transactions.
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CY7C1512AV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1512AV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1512AV18-250BZC?
For technical support, including CY7C1512AV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512AV18-250BZC requirements.
6.How does Aetrix verify that CY7C1512AV18-250BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1512AV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512AV18-250BZC meets industry standards.
7.What is the process for return or replacement of CY7C1512AV18-250BZC?
All CY7C1512AV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512AV18-250BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1512AV18-250BZC part is unused and in its original packaging.
Return procedure for CY7C1512AV18-250BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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