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Infineon Technologies CY7C1512AV18-250BZC

Part No.:
CY7C1512AV18-250BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1512AV18-250BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,437

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Product details

Overview

CY7C1512AV18-250BZC from Cypress Semiconductor is a 4M × 18 (72-Mbit), 1.8V QDR® II SRAM with dual independent read/write ports, 250 MHz clock operation, 1.5-cycle read latency (DLL enabled), and DDR interfaces on both ports delivering 500 MT/s effective data rate. It implements synchronous pipelined burst architecture for high-bandwidth networking buffer applications requiring zero bus turnaround.

For engineers reviewing the CY7C1512AV18-250BZC datasheet, CY7C1512AV18-250BZC pinout, CY7C1512AV18-250BZC application, or CY7C1512AV18-250BZC equivalent, key selection criteria include 165-ball FBGA package compatibility, HSTL-18 I/O compliance, DLL-enabled timing mode, echo clock (CQ/CQ) support for source-synchronous capture, and depth expansion via RPS/WPS port selects.

Technical Context

This QDR II SRAM uses separate K/K input clocks for address/data capture and C/C output clocks for data launch, enabling precise DDR timing control and eliminating bus contention. Its internal architecture comprises two 2M × 18 memory arrays with multiplexed address latching on alternating K-clock edges.

The device supports both DLL-on (1.5-cycle read latency, up to 250 MHz) and DLL-off (1-cycle latency, QDR I mode, up to 167 MHz) operation via the DOFF pin. Echo clocks CQ/CQ are free-running and synchronized to C/C, simplifying high-speed data capture in multi-device systems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4M × 18 = 72 Mbit; enables compact high-throughput buffering without external depth expansion
Max Clock Frequency250 MHz; supports 500 MT/s DDR transfers per port for aggregate 1 GB/s bandwidth
Read Latency1.5 cycles (DLL enabled); ensures deterministic timing for pipeline-aligned controller designs
I/O VoltageVDDQ = 1.4 V to 1.8 V; compatible with HSTL-18 Class I/II receivers and drivers
Core VoltageVDD = 1.8 V ±0.1 V; defines stable low-power operation with tight supply tolerance
Package165-ball FBGA (15 × 17 × 1.4 mm); provides signal integrity and thermal performance for dense PCB layouts
Interface TypeDouble Data Rate (DDR) on both read and write ports; eliminates bus turnaround overhead in full-duplex systems

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous write data inputsLatched on rising edges of K/K; supports 2-word burst writes with byte-level granularity via BWS[1:0]
Q[17:0]Synchronous read data outputsDriven on rising edges of C/C; tristated automatically after burst completion when RPS deasserted
K, KPositive/negative input clocksControl all synchronous inputs (address, data, control); rising edges initiate read/write operations
C, CPositive/negative output clocksReference timing for Q[17:0] output launch; used with CQ/CQ for flight-time deskewing
CQ, CQEcho clocks referenced to C/CFree-running, source-synchronous clocks for receiver-side data capture alignment
RPS, WPSRead/Write Port SelectsActive-low enables; allow independent port activation for depth expansion and interleaved access
BWS[1:0]Byte Write SelectsActive-low controls D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes without read-modify-write overhead
DOFFDLL Turn-Off ControlActive-low disables Delay Lock Loop; switches device to QDR I timing (1-cycle latency, ≤167 MHz)
ZQOutput impedance calibrationConnect to resistor-to-ground (RQ) to set Q/CQ output impedance to 0.2×RQ; critical for HSTL signal integrity

Key Features

FeatureDesign Value
Separate Read/Write PortsEliminates bus turnaround delay and contention, enabling true concurrent read/write at full bandwidth
2-Word Burst ArchitectureDelivers two 18-bit words per access cycle-optimized for packet header + payload streaming in switch fabric buffers
Source-Synchronous Echo Clocks (CQ/CQ)Enables reliable >500 MT/s data capture by compensating for board trace skew between controller and SRAM
HSTL-18 Compatible I/OSupports 1.4–1.8 V VDDQ with programmable drive strength; meets JEDEC JESD8-15A for high-speed signaling
JTAG 1149.1 Test Access PortEnables boundary scan testing and in-system debug without additional test fixtures or probes

Applications

Packet Buffering in Layer 2/3 SwitchesHigh-Speed Network Interface Controllers

Use Scenario: Storing ingress/egress packet headers and payloads in enterprise Ethernet switches operating at 10 Gbps line rate.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as non-blocking buffer memory with simultaneous read (transmit path) and write (receive path) access.

Use Value: 72-Mbit capacity and 1 GB/s aggregate bandwidth sustain full wire-rate buffering without packet loss under bursty traffic loads.

Use Scenario: Acting as descriptor and status memory for 25G/100G NICs implementing RDMA over Converged Ethernet (RoCE).

IC Role / Device Role / Timing Role: Synchronous burst SRAM providing low-latency, deterministic access to DMA descriptors and completion queues.

Use Value: 1.5-cycle DLL-enabled read latency and echo-clock–based capture ensure timing closure at 250 MHz controller interface.

Telecom Line Card BuffersBaseband Processing in 5G Radio Units

Use Scenario: Buffering CPRI/OBSAI frames between fronthaul PHY and MAC layers in LTE/5G macro base stations.

IC Role / Device Role / Timing Role: High-reliability SRAM with ECC-capable controller interface handling time-critical fronthaul transport packets.

Use Value: 165-ball FBGA package and HSTL I/O support robust signal integrity across long backplane traces in carrier-grade chassis.

Use Scenario: Storing FFT/IFFT coefficients and intermediate results in massive MIMO digital beamforming engines.

IC Role / Device Role / Timing Role: Low-latency, pipelined memory supporting parallel processing pipelines with strict real-time deadlines.

Use Value: DLL-off mode (QDR I) provides guaranteed 1-cycle latency at 167 MHz for deterministic timing in safety-critical baseband chains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-Mbit (2M × 18), 100 MHz max frequency, LVDS I/O, no echo clocksLower bandwidth, differential signaling only; suited for legacy telecom systems with LVDS infrastructureSelect when system uses LVDS PHY and does not require >200 MHz operation or source-synchronous capture
ISSI IS61WV102418B18-Mbit (512K × 18), asynchronous SRAM, 15 ns access, single-port, CMOS I/ONo DDR, no burst, no DLL; lacks concurrency and bandwidth for modern packet processingSelect only for cost-sensitive, low-bandwidth control-plane memory where timing determinism is secondary

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1512AV18-250BZC delivers 4× higher density, 2.5× higher bandwidth, and integrated echo-clock timing-making it uniquely suitable for next-generation packet-switched infrastructure requiring deterministic, full-duplex memory access.

Availability

CY7C1512AV18-250BZC is available at Aetrix Electronics and suitable for packet buffering in Layer 2/3 switches, high-speed network interface controllers, and telecom line card buffers requiring stable component supply across multi-year production cycles.

Supply support for CY7C1512AV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1512AV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in packet-switched networking equipment where deterministic timing and concurrent read/write throughput are critical.

FAQ

What is the function of the DOFF pin on CY7C1512AV18-250BZC?

The DOFF (DLL Turn-Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. For standard QDR II operation at 250 MHz with 1.5-cycle latency, DOFF must be held HIGH via a ≤10 kΩ pull-up to VDDQ.

How does the ZQ pin affect output drive strength and signal integrity?

The ZQ pin calibrates the output impedance of Q[17:0] and CQ/CQ signals to match the system data bus. Connecting ZQ to a precision resistor (RQ) to ground sets output impedance to 0.2 × RQ. Direct connection to VDDQ enables minimum impedance mode. ZQ must never be left floating or tied to VSS, as this disables impedance control and risks signal integrity failure.

Can CY7C1512AV18-250BZC operate in single-clock mode, and how is it configured?

Yes-it supports single-clock mode using only K/K for both input registration and output launch (replacing C/C). To enable, tie C and C to K and K respectively, and configure the device to use K/K as the sole timing reference. In this mode, data output timing follows K/K edges, simplifying clock routing at the cost of reduced deskew capability versus dual-clock mode.

What is the purpose of the BWS[1:0] pins, and how do they enable byte-level writes?

BWS0 and BWS1 are active-low byte write selects that gate D[8:0] and D[17:9], respectively. During each 18-bit write burst, asserting either BWS pin allows corresponding byte lanes to be updated while leaving unselected bytes unchanged. This enables efficient partial-word writes-critical for modifying packet headers or status fields without full-word read-modify-write cycles.

CY7C1512AV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1512AV18-250BZC FAQ

1.How can I place an order for CY7C1512AV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1512AV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1512AV18-250BZC reliable?

The price and inventory of CY7C1512AV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512AV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1512AV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512AV18-250BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1512AV18-250BZC?

CY7C1512AV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1512AV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1512AV18-250BZC?

For technical support, including CY7C1512AV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512AV18-250BZC requirements.

6.How does Aetrix verify that CY7C1512AV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1512AV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512AV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1512AV18-250BZC?

All CY7C1512AV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512AV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1512AV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1512AV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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