Infineon Technologies CY7C1512AV18-250BZI

Overview

CY7C1512AV18-250BZI from Cypress Semiconductor is a 4M × 18 (72-Mbit), 1.8V QDR® II SRAM with dual independent read/write ports, 250 MHz clock operation (500 MT/s DDR), 1.5-cycle read latency (DLL enabled), and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers full data coherency and supports depth expansion via RPS/WPS for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1512AV18-250BZI datasheet, CY7C1512AV18-250BZI pinout, CY7C1512AV18-250BZI application, or CY7C1512AV18-250BZI equivalent, key selection criteria include its 2-word burst architecture, echo clock (CQ/CQ) support for timing deskew, HSTL-18 I/O compliance, DLL-controlled latency mode, and dual-clock domain (K/K, C/C) synchronization for concurrent access.

Technical Context

The CY7C1512AV18-250BZI implements a synchronous pipelined QDR II architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its internal 4M × 18 memory array is accessed via multiplexed address inputs latched on alternating edges of K/K clocks, enabling concurrent read and write initiation.

It uses two independent clock domains: K/K controls all synchronous inputs (address, data, control), while C/C governs output timing and echo clock generation. The integrated Delay Lock Loop (DLL) aligns CQ/CQ to C/C with sub-nanosecond phase accuracy, ensuring reliable data capture at 500 MT/s in high-speed systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418B, the CY7C1512AV18-250BZI uniquely combines 72-Mbit density, true dual-port concurrency, echo-clock–assisted timing closure, and DLL-adjustable latency-making it the sole fit for deterministic, high-throughput packet buffer designs requiring sub-cycle timing predictability.

Availability

CY7C1512AV18-250BZI is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and baseband processing memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1512AV18-250BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR II SRAM product line-including CY7C1512AV18-was engineered specifically for deterministic, low-latency, high-bandwidth buffering in packet-switched infrastructure, where concurrent access and precise timing closure are mandatory.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. When HIGH (via 10 kΩ pull-up), DLL is enabled, delivering 1.5-cycle latency at full 250 MHz operation and precise echo clock alignment.

Can CY7C1512AV18-250BZI operate with only one clock pair instead of two?

Yes-it supports single-clock mode using only K/K to drive both input registers and output registers (replacing C/C). In this configuration, data is clocked out on K/K edges, eliminating need for separate output clocks but forfeiting echo clock deskew capability and reducing maximum reliable data rate due to increased timing uncertainty.

How does the ZQ pin calibrate output impedance, and what is the required external component?

ZQ connects to an external precision resistor (RQ) tied to ground; typical value is 50 Ω. The device measures RQ and adjusts driver strength so that Q[17:0], CQ, and CQ output impedances equal 0.2 × RQ (i.e., 10 Ω for 50 Ω reference). Leaving ZQ unconnected or tying to VSS violates specification and causes undefined output drive behavior.

What is the role of BWS[1:0] in write operations, and how are they mapped to data bits?

BWS0 controls D[8:0] and BWS1 controls D[17:9]. Both are sampled synchronously with data on K/K edges. Asserting either BWS pin enables writing its associated 9-bit byte; deasserting it preserves existing memory contents in that byte. This enables efficient partial-word updates without full-word read-modify-write sequences.