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Infineon Technologies CY7C1512AV18-250BZIT

Part No.:
CY7C1512AV18-250BZIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1512AV18-250BZIT.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,358

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Product details

Overview

CY7C1512AV18-250BZIT from Cypress Semiconductor is a 4M × 18 (72-Mbit), 1.8V QDR® II SRAM with separate read/write ports, 250 MHz clock operation, 2-word burst transfers, DDR interfaces on both ports (500 MT/s effective data rate), and 1.5-cycle read latency with DLL enabled. It serves as high-bandwidth buffer memory in network packet processors requiring concurrent access without bus turnaround.

For engineers reviewing the CY7C1512AV18-250BZIT datasheet, CY7C1512AV18-250BZIT pinout, CY7C1512AV18-250BZIT application, or CY7C1512AV18-250BZIT equivalent, key selection criteria include its dual-clock DDR timing architecture, HSTL-18 I/O compliance, 165-ball FBGA package, DLL-controlled latency mode, and depth expansion via RPS/WPS port selects.

Technical Context

This SRAM implements a synchronous pipelined QDR II architecture with physically independent read and write data paths, eliminating bus turnaround overhead. Its dual-edge DDR I/O uses K/K for input capture and C/C for output timing, with echo clocks CQ/CQ referenced to C/C to compensate for flight-time skew in high-speed backplanes.

The device supports two operational modes: DLL-enabled (1.5-cycle read latency, up to 250 MHz) and DLL-disabled (1-cycle latency, QDR I timing, max 167 MHz). Address multiplexing across shared A[20:0] pins enables 4M-depth addressing while minimizing pin count, and byte write select BWS[1:0] allows partial-word writes without read-modify-write cycles.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4M × 18 = 72 Mbit; supports 4 million 18-bit words per port
Max Clock Frequency250 MHz; enables 500 MT/s DDR throughput per port
Read Latency1.5 cycles (DLL on) or 1 cycle (DLL off); determines minimum pipeline depth for controller design
VDD / VDDQCore VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V; enables low-power HSTL-18 signaling
Burst Length2-word burst per access; delivers 36 bits per clock cycle on read/write ports
Package165-ball FBGA (15 × 17 × 1.4 mm); RoHS-compliant, thermal and mechanical profile validated for high-density PCBs
JTAG SupportIEEE 1149.1 compliant TAP (TCK/TMS/TDI/TDO); enables boundary-scan test and debug in system

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm × 1.4 mm body height, 0.8 mm ball pitch, Pb-free compatible. Pinout optimized for signal integrity with dedicated VDDQ/VSS planes, distributed ZQ impedance calibration, and echo clock pairs adjacent to data groups.

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous write data inputsLatched on rising edges of K/K; supports partial writes via BWS[1:0]
Q[17:0]Synchronous read data outputsDriven on rising edges of C/C; tristated automatically when RPS deasserted
RPS / WPSPort enable controlsActive-low synchronous selects; enable concurrent but independent read/write operations
K / K, C / CDual differential clock inputsK/K capture inputs; C/C time outputs; eliminate clock skew between controller and memory
CQ / CQOutput echo clocksFree-running, phase-aligned copies of C/C; simplify source-synchronous data capture at controller
ZQImpedance calibration referenceConnects to external resistor to ground; tunes Q[17:0] and CQ/CQ output drive strength to match 50 Ω bus
DOFFDLL disable controlPull LOW to force QDR I mode (1-cycle latency, ≤167 MHz); pull HIGH for QDR II mode

Key Features

FeatureDesign Value
Separate Read/Write PortsEnables true concurrent access-no bus turnaround, no arbitration, deterministic timing for real-time packet buffering
2-Word DDR BurstDelivers 36 bits/cycle per port at 250 MHz; doubles bandwidth vs. single-data-rate SRAMs of same density
Delay Lock Loop (DLL)Aligns internal data launch to C/C edges; achieves 1.5-cycle read latency with <0.45 ns output jitter
HSTL-18 I/O InterfaceSupports 1.4–1.8 V VDDQ; provides fast edge rates and noise immunity for >400 MHz data valid windows
Byte Write Select (BWS)BWS[1:0] independently gates D[8:0] and D[17:9]; eliminates read-modify-write for partial updates

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-wait-state FIFO buffer with simultaneous header read and payload write.

Use Value: Eliminates bus contention and turnaround delays, enabling line-rate forwarding at 10 Gbps+ with sub-10 ns access predictability.

Use Scenario: Frame assembly/disassembly in SONET/SDH OC-192 line cards with strict jitter budgets.

IC Role / Device Role / Timing Role: High-speed scratchpad memory for ATM cell reordering and pointer management.

Use Value: DLL-synchronized CQ/CQ echo clocks allow precise source-synchronous capture at FPGA logic, meeting ±25 ps setup/hold margins.

Baseband Processing CacheTest Equipment Pattern Memory

Use Scenario: Temporary storage of channelized IQ samples in 4G/LTE baseband units before FFT processing.

IC Role / Device Role / Timing Role: Burst-access memory interfaced to DSP core via dual-clock DDR interface.

Use Value: 2-word burst matches typical FFT bin size; 1.5-cycle latency aligns with pipeline stages in fixed-point DSP architectures.

Use Scenario: Storing stimulus/response vectors in high-speed automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: Deterministic-latency memory for real-time vector playback synchronized to system clock.

Use Value: JTAG 1149.1 support enables in-system verification of memory contents and timing margins during production test.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-Mbit QDR II+, 167 MHz max, x36 config only; no DOFF pin; fixed 1.5-cycle latencyLower density, no DLL-off mode; suited for cost-sensitive systems where 167 MHz sufficesSelect when footprint compatibility with IDT-based designs is required and bandwidth demand ≤334 MT/s
ISSI IS61WV102418B18-Mbit asynchronous SRAM, 15 ns access, x18; no DDR, no burst, no DLLNon-pipelined, no concurrent ports; used in legacy control-plane buffers where latency tolerance >20 nsSelect only for non-real-time subsystems where simplicity and low power outweigh bandwidth needs

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1512AV18-250BZIT delivers 2× higher bandwidth (500 vs. 334 MT/s) and deterministic dual-port concurrency, but requires DLL tuning and tighter layout for echo clock routing-making it optimal for new high-speed data plane designs.

Availability

CY7C1512AV18-250BZIT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and test equipment pattern memory requiring stable component supply and long-term industrial availability.

Supply support for CY7C1512AV18-250BZIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.

CY7C1512AV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking and telecom infrastructure where bus turnaround overhead must be eliminated.

FAQ

What is the function of the DOFF pin on CY7C1512AV18-250BZIT?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and a maximum frequency of 167 MHz. When pulled HIGH (typically via 10 kΩ pull-up), DLL is enabled, supporting 250 MHz operation and 1.5-cycle latency. This pin directly determines timing mode and frequency ceiling.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external resistor to ground (typically 50 Ω) to calibrate the output driver impedance of Q[17:0], CQ, and CQ signals. This ensures matched 50 Ω drive strength to the PCB trace, minimizing reflections and maintaining signal integrity at 500 MT/s. Leaving ZQ unconnected or tied to GND violates specification and causes undefined output drive levels.

Can CY7C1512AV18-250BZIT operate with a single clock domain?

Yes-it supports Single Clock Mode where only K/K clocks control both input registers (D[17:0], RPS, WPS) and output registers (Q[17:0]). In this mode, C/C are unused, and data is driven on K/K edges. However, this sacrifices echo clock benefits and increases timing margin pressure; dual-clock mode with C/C and CQ/CQ is recommended for >200 MHz operation.

What is the purpose of BWS[1:0] in write operations?

BWS[1:0] (Byte Write Select) enables partial-word writes without read-modify-write cycles. BWS0 controls D[8:0], BWS1 controls D[17:9]. When either is deasserted, the corresponding 9-bit byte remains unchanged in memory. This is critical for updating packet headers or metadata fields within larger data structures while preserving adjacent payload bytes.

CY7C1512AV18-250BZIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1512AV18-250BZIT FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1512AV18-250BZIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1512AV18-250BZIT reliable?

The price and inventory of CY7C1512AV18-250BZIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512AV18-250BZIT is usually 5 days.

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CY7C1512AV18-250BZIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1512AV18-250BZIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1512AV18-250BZIT?

For technical support, including CY7C1512AV18-250BZIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512AV18-250BZIT requirements.

6.How does Aetrix verify that CY7C1512AV18-250BZIT is sourced from the original manufacturer or authorized distributors?

All CY7C1512AV18-250BZIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512AV18-250BZIT meets industry standards.

7.What is the process for return or replacement of CY7C1512AV18-250BZIT?

All CY7C1512AV18-250BZIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512AV18-250BZIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1512AV18-250BZIT part is unused and in its original packaging.

Return procedure for CY7C1512AV18-250BZIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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