Infineon Technologies CY7C1512AV18-250BZIT
- Part No.:
- CY7C1512AV18-250BZIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1512AV18-250BZIT.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,358
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1512AV18-250BZIT from Cypress Semiconductor is a 4M × 18 (72-Mbit), 1.8V QDR® II SRAM with separate read/write ports, 250 MHz clock operation, 2-word burst transfers, DDR interfaces on both ports (500 MT/s effective data rate), and 1.5-cycle read latency with DLL enabled. It serves as high-bandwidth buffer memory in network packet processors requiring concurrent access without bus turnaround.
For engineers reviewing the CY7C1512AV18-250BZIT datasheet, CY7C1512AV18-250BZIT pinout, CY7C1512AV18-250BZIT application, or CY7C1512AV18-250BZIT equivalent, key selection criteria include its dual-clock DDR timing architecture, HSTL-18 I/O compliance, 165-ball FBGA package, DLL-controlled latency mode, and depth expansion via RPS/WPS port selects.
Technical Context
This SRAM implements a synchronous pipelined QDR II architecture with physically independent read and write data paths, eliminating bus turnaround overhead. Its dual-edge DDR I/O uses K/K for input capture and C/C for output timing, with echo clocks CQ/CQ referenced to C/C to compensate for flight-time skew in high-speed backplanes.
The device supports two operational modes: DLL-enabled (1.5-cycle read latency, up to 250 MHz) and DLL-disabled (1-cycle latency, QDR I timing, max 167 MHz). Address multiplexing across shared A[20:0] pins enables 4M-depth addressing while minimizing pin count, and byte write select BWS[1:0] allows partial-word writes without read-modify-write cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4M × 18 = 72 Mbit; supports 4 million 18-bit words per port |
| Max Clock Frequency | 250 MHz; enables 500 MT/s DDR throughput per port |
| Read Latency | 1.5 cycles (DLL on) or 1 cycle (DLL off); determines minimum pipeline depth for controller design |
| VDD / VDDQ | Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V; enables low-power HSTL-18 signaling |
| Burst Length | 2-word burst per access; delivers 36 bits per clock cycle on read/write ports |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm); RoHS-compliant, thermal and mechanical profile validated for high-density PCBs |
| JTAG Support | IEEE 1149.1 compliant TAP (TCK/TMS/TDI/TDO); enables boundary-scan test and debug in system |
Pinout & Package
165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm × 1.4 mm body height, 0.8 mm ball pitch, Pb-free compatible. Pinout optimized for signal integrity with dedicated VDDQ/VSS planes, distributed ZQ impedance calibration, and echo clock pairs adjacent to data groups.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edges of K/K; supports partial writes via BWS[1:0] |
| Q[17:0] | Synchronous read data outputs | Driven on rising edges of C/C; tristated automatically when RPS deasserted |
| RPS / WPS | Port enable controls | Active-low synchronous selects; enable concurrent but independent read/write operations |
| K / K, C / C | Dual differential clock inputs | K/K capture inputs; C/C time outputs; eliminate clock skew between controller and memory |
| CQ / CQ | Output echo clocks | Free-running, phase-aligned copies of C/C; simplify source-synchronous data capture at controller |
| ZQ | Impedance calibration reference | Connects to external resistor to ground; tunes Q[17:0] and CQ/CQ output drive strength to match 50 Ω bus |
| DOFF | DLL disable control | Pull LOW to force QDR I mode (1-cycle latency, ≤167 MHz); pull HIGH for QDR II mode |
Key Features
| Feature | Design Value |
|---|---|
| Separate Read/Write Ports | Enables true concurrent access-no bus turnaround, no arbitration, deterministic timing for real-time packet buffering |
| 2-Word DDR Burst | Delivers 36 bits/cycle per port at 250 MHz; doubles bandwidth vs. single-data-rate SRAMs of same density |
| Delay Lock Loop (DLL) | Aligns internal data launch to C/C edges; achieves 1.5-cycle read latency with <0.45 ns output jitter |
| HSTL-18 I/O Interface | Supports 1.4–1.8 V VDDQ; provides fast edge rates and noise immunity for >400 MHz data valid windows |
| Byte Write Select (BWS) | BWS[1:0] independently gates D[8:0] and D[17:9]; eliminates read-modify-write for partial updates |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-wait-state FIFO buffer with simultaneous header read and payload write. Use Value: Eliminates bus contention and turnaround delays, enabling line-rate forwarding at 10 Gbps+ with sub-10 ns access predictability. | Use Scenario: Frame assembly/disassembly in SONET/SDH OC-192 line cards with strict jitter budgets. IC Role / Device Role / Timing Role: High-speed scratchpad memory for ATM cell reordering and pointer management. Use Value: DLL-synchronized CQ/CQ echo clocks allow precise source-synchronous capture at FPGA logic, meeting ±25 ps setup/hold margins. |
| Baseband Processing Cache | Test Equipment Pattern Memory |
Use Scenario: Temporary storage of channelized IQ samples in 4G/LTE baseband units before FFT processing. IC Role / Device Role / Timing Role: Burst-access memory interfaced to DSP core via dual-clock DDR interface. Use Value: 2-word burst matches typical FFT bin size; 1.5-cycle latency aligns with pipeline stages in fixed-point DSP architectures. | Use Scenario: Storing stimulus/response vectors in high-speed automated test equipment (ATE) pattern generators. IC Role / Device Role / Timing Role: Deterministic-latency memory for real-time vector playback synchronized to system clock. Use Value: JTAG 1149.1 support enables in-system verification of memory contents and timing margins during production test. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit QDR II+, 167 MHz max, x36 config only; no DOFF pin; fixed 1.5-cycle latency | Lower density, no DLL-off mode; suited for cost-sensitive systems where 167 MHz suffices | Select when footprint compatibility with IDT-based designs is required and bandwidth demand ≤334 MT/s |
| ISSI IS61WV102418B | 18-Mbit asynchronous SRAM, 15 ns access, x18; no DDR, no burst, no DLL | Non-pipelined, no concurrent ports; used in legacy control-plane buffers where latency tolerance >20 ns | Select only for non-real-time subsystems where simplicity and low power outweigh bandwidth needs |
Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1512AV18-250BZIT delivers 2× higher bandwidth (500 vs. 334 MT/s) and deterministic dual-port concurrency, but requires DLL tuning and tighter layout for echo clock routing-making it optimal for new high-speed data plane designs.
Availability
CY7C1512AV18-250BZIT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and test equipment pattern memory requiring stable component supply and long-term industrial availability.
Supply support for CY7C1512AV18-250BZIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.
CY7C1512AV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking and telecom infrastructure where bus turnaround overhead must be eliminated.
FAQ
What is the function of the DOFF pin on CY7C1512AV18-250BZIT?
The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and a maximum frequency of 167 MHz. When pulled HIGH (typically via 10 kΩ pull-up), DLL is enabled, supporting 250 MHz operation and 1.5-cycle latency. This pin directly determines timing mode and frequency ceiling.
How does the ZQ pin affect signal integrity in high-speed designs?
The ZQ pin connects to an external resistor to ground (typically 50 Ω) to calibrate the output driver impedance of Q[17:0], CQ, and CQ signals. This ensures matched 50 Ω drive strength to the PCB trace, minimizing reflections and maintaining signal integrity at 500 MT/s. Leaving ZQ unconnected or tied to GND violates specification and causes undefined output drive levels.
Can CY7C1512AV18-250BZIT operate with a single clock domain?
Yes-it supports Single Clock Mode where only K/K clocks control both input registers (D[17:0], RPS, WPS) and output registers (Q[17:0]). In this mode, C/C are unused, and data is driven on K/K edges. However, this sacrifices echo clock benefits and increases timing margin pressure; dual-clock mode with C/C and CQ/CQ is recommended for >200 MHz operation.
What is the purpose of BWS[1:0] in write operations?
BWS[1:0] (Byte Write Select) enables partial-word writes without read-modify-write cycles. BWS0 controls D[8:0], BWS1 controls D[17:9]. When either is deasserted, the corresponding 9-bit byte remains unchanged in memory. This is critical for updating packet headers or metadata fields within larger data structures while preserving adjacent payload bytes.
CY7C1512AV18-250BZIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1512AV18-250BZIT FAQ
1.How can I place an order for CY7C1512AV18-250BZIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1512AV18-250BZIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1512AV18-250BZIT reliable?
The price and inventory of CY7C1512AV18-250BZIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512AV18-250BZIT is usually 5 days.
3.What payment methods are accepted for CY7C1512AV18-250BZIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512AV18-250BZIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1512AV18-250BZIT?
CY7C1512AV18-250BZIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1512AV18-250BZIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1512AV18-250BZIT?
For technical support, including CY7C1512AV18-250BZIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512AV18-250BZIT requirements.
6.How does Aetrix verify that CY7C1512AV18-250BZIT is sourced from the original manufacturer or authorized distributors?
All CY7C1512AV18-250BZIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512AV18-250BZIT meets industry standards.
7.What is the process for return or replacement of CY7C1512AV18-250BZIT?
All CY7C1512AV18-250BZIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512AV18-250BZIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1512AV18-250BZIT part is unused and in its original packaging.
Return procedure for CY7C1512AV18-250BZIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1512AV18-250BZIT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

