Infineon Technologies CY7C1512AV18-250BZXC

Overview

CY7C1512AV18-250BZXC from Cypress Semiconductor is a 4M × 18 (72-Mbit), 1.8V QDR® II SRAM with dual independent read/write ports, 250 MHz clock operation, 1.5-cycle read latency (DLL enabled), DDR interfaces on both ports, and 165-ball FBGA (15 × 17 × 1.4 mm) packaging - deployed in high-bandwidth packet buffering for network line cards.

For engineers reviewing the CY7C1512AV18-250BZXC datasheet, CY7C1512AV18-250BZXC pinout, CY7C1512AV18-250BZXC application, or CY7C1512AV18-250BZXC equivalent, key selection considerations include burst depth (2-word), HSTL-18 I/O compatibility, DLL-controlled timing accuracy, and port-select–based depth expansion capability.

Technical Context

The device implements true dual-port synchronous pipelined architecture: separate K/K clocks latch write addresses and data, while C/C clocks drive read outputs with echo clocks (CQ/CQ) for source-synchronous capture. Internal organization comprises two 2M × 18 arrays enabling concurrent access without bus turnaround.

All control signals (RPS, WPS, BWS[1:0]) are registered on K/K edges; data outputs (Q[17:0]) are registered on C/C edges. DLL alignment enables precise 500 Mbps DDR data placement; DOFF pin disables DLL to revert to QDR I mode (1-cycle latency, ≤167 MHz).

Key Specifications

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free termination. Pinout validated per Cypress Document #001-06984 Rev. *E (Pages 4–5).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-15BLI, CY7C1512AV18-250BZXC uniquely delivers concurrent DDR read/write at 500 MT/s with DLL-aligned timing and echo-clock–assisted capture - essential for modern packet-processing pipelines.

Availability

CY7C1512AV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and high-speed test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1512AV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems.

CY7C1512AV18 belongs to the QDR II SRAM product line engineered specifically for deterministic, low-latency, high-throughput memory subsystems in networking and telecom infrastructure.

FAQ

What is the function of the DOFF pin?

The DOFF pin disables the internal Delay Lock Loop when pulled LOW. In this state, the device operates in QDR I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. For standard QDR II operation at 250 MHz with 1.5-cycle latency, DOFF must be pulled HIGH via ≤10 kΩ resistor to VDDQ.

How does ZQ pin calibration affect signal integrity?

ZQ connects to an external resistor to ground (RQ) to calibrate output driver impedance for Q[17:0], CQ, and CQ pins to 0.2 × RQ. With RQ = 60 Ω, outputs match 12 Ω transmission lines - critical for maintaining HSTL-18 signal integrity at 500 Mbps. Leaving ZQ unconnected or tied to GND violates specification and causes timing violations.

Can CY7C1512AV18-250BZXC operate in single-clock mode?

Yes - by tying K to C and K to C, the device uses K/K for both input registration and output timing. In this mode, Q[17:0] is clocked by K/K instead of C/C, eliminating need for separate output clocks but forfeiting CQ/CQ deskew benefits and reducing maximum reliable frequency due to clock path asymmetry.

What is the role of BWS[1:0] during write operations?

BWS0 and BWS1 are active-low byte write selects sampled on K/K edges. BWS0 controls D[8:0], BWS1 controls D[17:9]. When either is deasserted, corresponding byte group remains unaltered - enabling efficient read-modify-write without full-word reads, essential for descriptor table updates in packet processors.