Infineon Technologies CY7C1512AV18-250BZXI
- Part No.:
- CY7C1512AV18-250BZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1512AV18-250BZXI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1512AV18-250BZXI from Cypress Semiconductor is a 4M × 18 (72-Mbit), 1.8V QDR® II SRAM with dual independent read/write ports, 250 MHz clock operation, 1.5-cycle read latency (DLL enabled), and DDR interfaces on both ports delivering 500 MT/s effective data rate. It uses 165-ball FBGA (15 × 17 × 1.4 mm), HSTL I/O, and supports depth expansion via RPS/WPS control - deployed in high-bandwidth packet buffering for network line cards.
For engineers reviewing the CY7C1512AV18-250BZXI datasheet, CY7C1512AV18-250BZXI pinout, CY7C1512AV18-250BZXI application, or CY7C1512AV18-250BZXI equivalent, key selection criteria include burst timing alignment with echo clocks (CQ/CQ), DLL-enabled latency mode, byte-write select granularity (BWS[1:0]), and VDDQ = 1.4V–1.8V compatibility with HSTL-18 receivers.
Technical Context
This QDR II SRAM implements synchronous pipelined architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its dual-clock domain uses K/K for address/data capture and C/C for output timing, with echo clocks CQ/CQ referenced to C/C to compensate for flight-time skew in multi-device systems.
The device supports two operational modes: DLL-enabled (1.5-cycle read latency, up to 250 MHz) and DLL-off (1-cycle latency, QDR I timing, ≤167 MHz). Internal organization as two 2M × 18 arrays enables concurrent access across banks, while BWS[1:0] provides per-byte write masking for D[8:0] and D[17:9], preserving unselected data during partial writes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4M × 18 configuration) |
| Max Clock Frequency | 250 MHz - enables 500 MT/s DDR throughput on both read and write ports |
| Read Latency | 1.5 cycles (DLL enabled); 1 cycle (DLL disabled via DOFF = LOW) |
| I/O Voltage | VDDQ = 1.4V to 1.8V - compatible with HSTL-18 Class I receivers |
| Core Supply | VDD = 1.8V ±0.1V - defines internal logic and array operating voltage |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - supports high-pin-count, low-inductance routing for >200 MHz signaling |
| Burst Length | 2-word burst per access - delivers two sequential 18-bit words per clock edge pair |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant (Pb-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | Latched on rising edges of K/K; supports 18-bit parallel write bursts |
| Q[17:0] | Synchronous read data output | Driven on rising edges of C/C; tristated automatically when RPS deasserted |
| RPS / WPS | Read/Write port select | Active-LOW controls port enable; enables depth expansion without external gating |
| BWS[1:0] | Byte write select | Independent control of D[8:0] and D[17:9]; preserves unmasked bytes during partial writes |
| C / C, CQ / CQ | Output clock & echo clock pairs | C/C times Q[17:0] output; CQ/CQ track C/C phase to simplify controller capture timing |
| K / K | Input clock pair | Sample all synchronous inputs (address, D[17:0], RPS, WPS, BWS); rising-edge triggered |
| ZQ | Impedance calibration input | Connects to external resistor to ground to calibrate output driver impedance to 0.2 × RQ |
| DOFF | DLL disable control | LOW forces QDR I mode (1-cycle latency); HIGH enables QDR II timing (1.5-cycle latency) |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Eliminates bus turnaround delay and contention - enables true concurrent read+write at full bandwidth |
| DDR interfaces on both ports | 500 MT/s effective throughput per port using 250 MHz K/K and C/C clocks |
| Echo clock support (CQ/CQ) | Enables source-synchronous data capture at controller with flight-time skew compensation |
| Programmable DLL mode | DOFF pin selects between 1.5-cycle (QDR II) and 1-cycle (QDR I) read latency - supports legacy timing migration |
| HSTL-18 compatible I/O | VDDQ = 1.4V–1.8V with ZQ-calibrated drivers - ensures signal integrity on high-speed backplanes |
Applications
| Packet Buffering in Switch ASICs | Line Card Memory for 10G/40G Ethernet |
|---|---|
Use Scenario: High-throughput packet buffering where ingress and egress traffic must be processed simultaneously without contention. IC Role / Device Role / Timing Role: Dual-port SRAM serving as shared buffer memory with concurrent read (egress) and write (ingress) operations synchronized to system clock domains. Use Value: 72-Mbit capacity and 500 MT/s DDR throughput per port meet sustained 40G line-rate buffering requirements with sub-ns timing margins. | Use Scenario: Memory subsystem for protocol processing engines handling TCP offload, deep packet inspection, and flow classification. IC Role / Device Role / Timing Role: Burst-access SRAM providing low-latency, deterministic access to metadata and packet headers under strict real-time deadlines. Use Value: 1.5-cycle DLL-enabled read latency and echo-clock timing reduce controller setup/hold uncertainty to <0.45 ns, enabling reliable >200 MHz interface operation. |
| Depth-Expanded Memory Arrays | Multi-Port Buffering in Telecom Baseband |
Use Scenario: Building wider or deeper memory banks using multiple CY7C1512AV18 devices in parallel or stacked configurations. IC Role / Device Role / Timing Role: Individual SRAM unit controlled by RPS/WPS signals to enable selective activation of read/write ports across devices. Use Value: Dedicated port-select pins eliminate need for external address demultiplexers or glue logic, reducing board area and signal count. | Use Scenario: Shared memory for digital front-end (DFE) and baseband processors in 4G/LTE and 5G NR radio units requiring simultaneous access to IQ sample buffers. IC Role / Device Role / Timing Role: Synchronous pipelined SRAM acting as time-aligned sample storage with deterministic burst delivery to multiple processing blocks. Use Value: 2-word burst architecture and separate clock domains (K/K for write, C/C for read) decouple processing pipeline stages, minimizing inter-block stall cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit (2M × 18), 100 MHz max, QDR II+, LVDS I/O, 256-ball FBGA | Lower density and bandwidth; suited for cost-sensitive mid-range telecom buffers | Select when system clock ≤100 MHz and LVDS signaling is required; not drop-in due to pinout and voltage mismatch |
| ISSI IS61WV102418B | 18-Mbit (512K × 36), 166 MHz async SRAM, 3.3V core/I/O, 119-ball BGA | No DDR, no dual-port, no echo clocks; simpler interface but lower throughput and higher latency | Choose for legacy designs needing pin-compatible replacement of older async SRAMs; incompatible with QDR II timing or burst protocols |
Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1512AV18-250BZXI delivers 4× higher density and 2.5× greater bandwidth with deterministic 1.5-cycle latency and echo-clock timing - critical for 40G+ packet processing where bus turnaround elimination directly reduces pipeline stalls.
Availability
CY7C1512AV18-250BZXI is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, depth-expanded SRAM arrays, and multi-port baseband buffering requiring stable component supply across extended production lifecycles.
Supply support for CY7C1512AV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with focus on signal integrity and timing precision.
CY7C1512AV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in packet-switched infrastructure and high-speed serial data processing systems.
FAQ
What is the function of the DOFF pin on CY7C1512AV18-250BZXI?
The DOFF (DLL Turn Off) pin is an active-LOW control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and maximum frequency limited to 167 MHz. For standard QDR II operation at 250 MHz with 1.5-cycle latency, DOFF must be held HIGH via a ≤10 kΩ pull-up to VDDQ.
How does the ZQ pin affect output driver impedance?
The ZQ pin connects to an external resistor (RQ) tied to ground to calibrate output driver impedance. The device sets CQ, CQ, and Q[17:0] output impedance to 0.2 × RQ. If ZQ is tied directly to VDDQ, minimum impedance mode is enabled. ZQ must never be left floating or connected to GND, as this disables calibration and risks signal integrity failure.
Can CY7C1512AV18-250BZXI operate with only one clock pair instead of two?
Yes - it supports single-clock mode using only K/K to drive both input registers and output registers (replacing C/C). In this mode, data output timing references K/K edges, eliminating need for separate output clocks. However, echo clocks (CQ/CQ) remain inactive, and flight-time skew compensation is lost, limiting usable trace length and maximum reliable frequency.
What is the role of BWS[1:0] in byte-write operations?
BWS[1:0] are active-LOW byte write select signals that independently enable writing to D[8:0] (BWS0) and D[17:9] (BWS1). When asserted, corresponding 9-bit data segments are written; when deasserted, those bytes retain prior values. This enables efficient read-modify-write sequences without full-word reads or external masking logic.
CY7C1512AV18-250BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1512AV18-250BZXI FAQ
1.How can I place an order for CY7C1512AV18-250BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1512AV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1512AV18-250BZXI reliable?
The price and inventory of CY7C1512AV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512AV18-250BZXI is usually 5 days.
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CY7C1512AV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1512AV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1512AV18-250BZXI?
For technical support, including CY7C1512AV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512AV18-250BZXI requirements.
6.How does Aetrix verify that CY7C1512AV18-250BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1512AV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512AV18-250BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1512AV18-250BZXI?
All CY7C1512AV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512AV18-250BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1512AV18-250BZXI part is unused and in its original packaging.
Return procedure for CY7C1512AV18-250BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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