Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1512AV18-250BZXIT

Part No.:
CY7C1512AV18-250BZXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1512AV18-250BZXIT.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,233

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1512AV18-250BZXIT from Cypress Semiconductor is a 4M × 18 (72-Mbit), 1.8V QDR® II SRAM with independent read/write ports, 250 MHz clock operation, 1.5-cycle read latency (DLL enabled), and DDR interfaces on both ports delivering 500 MT/s effective data rate. It implements synchronous pipelined burst architecture for high-bandwidth networking buffers in packet-switching ASICs.

For engineers reviewing the CY7C1512AV18-250BZXIT datasheet, CY7C1512AV18-250BZXIT pinout, CY7C1512AV18-250BZXIT application, or CY7C1512AV18-250BZXIT equivalent, key selection criteria include dual-clock timing control (K/K, C/C), echo clocks (CQ/CQ) for source-synchronous capture, HSTL-18 I/O compliance, DLL-enabled latency tuning, and 165-ball FBGA package compatibility with depth-expansion port selects (RPS/WPS).

Technical Context

This QDR II SRAM uses separate K/K input clocks to latch address and control signals and independent C/C output clocks to drive Q[17:0] with precise deskew control. Echo clocks CQ/CQ are free-running and synchronized to C/C, enabling controller-side data capture alignment across multiple devices.

The device supports two operational modes: DLL-on mode (1.5-cycle read latency, up to 250 MHz) and DLL-off mode (1-cycle latency, QDR I timing, max 167 MHz). Byte write select pins BWS[1:0] enable selective 9-bit byte updates without read-modify-write overhead.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4M × 18 = 72 Mbit; supports 2-word burst transfers per access
Operating Frequency250 MHz clock → 500 MT/s effective throughput via DDR on both ports
Read Latency1.5 cycles (DLL enabled); 1 cycle (DLL disabled via DOFF = LOW)
Supply VoltagesCore VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V for HSTL-18 compliance
Package165-ball FBGA (15 × 17 × 1.4 mm); RoHS-compliant, Pb-free option available
Interface StandardHSTL Class I inputs/outputs; JTAG 1149.1 test access port included
Timing ControlDual clock domains: K/K for inputs, C/C for outputs; CQ/CQ echo clocks provided

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous write data inputsLatched on rising edges of K/K; support 18-bit parallel writes per burst
Q[17:0]Synchronous read data outputsDriven on rising edges of C/C; tristated automatically when RPS deasserted
RPS / WPSRead/Write Port Select (active LOW)Enable independent port activation; allow depth expansion without bus contention
BWS[1:0]Byte Write Select (active LOW)Control 9-bit sub-word writes: BWS0 → D[8:0], BWS1 → D[17:9]
K / KPositive/Negative input clocksCapture all synchronous inputs (address, control, data); define write initiation edge
C / CPositive/Negative output clocksDrive Q[17:0]; used with CQ/CQ for flight-time deskew in multi-device systems
CQ / CQEcho clocks referenced to C/CFree-running, source-synchronous clocks for controller-side data capture alignment
ZQOutput impedance calibration inputConnect to external resistor to ground (RQ) to tune Q[17:0]/CQ/CQ output impedance to 0.2×RQ
DOFFDLL disable control (active LOW)Pull HIGH for QDR II mode (1.5-cycle latency); tie LOW for QDR I mode (1-cycle latency, ≤167 MHz)
VREFHSTL reference voltage inputStatic bias point for HSTL I/O threshold setting; must be supplied externally at VDDQ/2

Key Features

FeatureDesign Value
Independent Read/Write PortsEliminates bus turnaround delay and data contention in full-duplex memory access
Source-Synchronous Echo Clocks (CQ/CQ)Enables deterministic, board-level deskew of read data across multiple SRAMs without routing-length matching
Programmable DLL Mode (DOFF)Allows seamless migration between QDR II (250 MHz, 1.5-cycle latency) and QDR I (167 MHz, 1-cycle latency) timing models
HSTL-18 I/O with ZQ CalibrationEnsures signal integrity at 500 MT/s by dynamically matching output driver impedance to PCB trace impedance
Depth Expansion Support (RPS/WPS)Permits stacking multiple devices with independent port enables-no external logic required for bank selection

Applications

Packet Buffer in Network Switch ASICLine Card Memory in Telecom Base Stations

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switch fabric.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer with concurrent read/write capability for cut-through forwarding.

Use Value: 500 MT/s DDR bandwidth and 1.5-cycle latency enable line-rate processing of 10 GbE frames without pipeline stalls.

Use Scenario: Buffering CPRI/Ir interface data between radio units and baseband processors in 4G/LTE macro cells.

IC Role / Device Role / Timing Role: Synchronous burst memory supporting deterministic jitter-tolerant data transfer between FPGA and RFIC.

Use Value: CQ/CQ echo clocks and DLL-controlled latency ensure sub-nanosecond timing alignment across distributed memory banks.

Deep Packet Inspection Engine CacheHigh-Speed Test Equipment Pattern Memory

Use Scenario: Storing signature-matching state tables and temporary packet fragments during real-time DPI scanning.

IC Role / Device Role / Timing Role: Low-latency, coherent SRAM accessed simultaneously by multiple inspection threads via dedicated ports.

Use Value: Full data coherency and burst-aligned 2-word reads eliminate cache invalidation overhead in multi-threaded pattern lookup.

Use Scenario: Holding stimulus/response vectors for automated test equipment operating at >200 MHz pattern rates.

IC Role / Device Role / Timing Role: Deterministic-access memory with guaranteed 1.5-cycle read latency and jitter-immune echo clocking.

Use Value: ZQ-calibrated HSTL outputs maintain signal integrity at 500 MT/s, reducing bit-error rates in high-speed ATE channel synchronization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-bit bus width (2M × 36), same 250 MHz speed, but uses SSTL-2 I/O not HSTL-18Requires different termination scheme and VTT supply; incompatible with HSTL-18 controller interfacesSelect only if system already uses SSTL-2 infrastructure and 36-bit data path is required
ISSI IS61WV102418BLL-10BLIAsynchronous 1M × 18 SRAM, 10 ns access time, no DDR, no echo clocks, no DLLLacks concurrent read/write, burst, or source-synchronous timing - unsuitable for QDR II system architectureConsider only for legacy designs where QDR II features are unnecessary and bandwidth < 100 MB/s suffices

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1512AV18-250BZXIT uniquely delivers HSTL-18–compliant 500 MT/s DDR throughput with echo-clock–assisted capture and programmable DLL latency-enabling deterministic, scalable memory subsystems in high-end networking silicon.

Availability

CY7C1512AV18-250BZXIT is available at Aetrix Electronics and suitable for packet buffering in network switches, line-card memory in telecom base stations, and deep packet inspection engines requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1512AV18-250BZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

CY7C1512AV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for ultra-low-latency, full-duplex memory subsystems in packet-processing ASICs and FPGA-based networking hardware.

FAQ

What is the function of the DOFF pin on CY7C1512AV18-250BZXIT?

The DOFF (DLL Turn Off) pin is an active-LOW control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. For standard QDR II operation at 250 MHz with 1.5-cycle latency, DOFF must be held HIGH via a ≤10 kΩ pull-up resistor to VDDQ.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin enables dynamic output impedance calibration: connecting it to a precision resistor (RQ) to ground sets Q[17:0], CQ, and CQ driver impedance to exactly 0.2 × RQ. This matches the SRAM's output drivers to the PCB trace impedance, minimizing reflections and maintaining clean eye diagrams at 500 MT/s-critical for reliable operation without manual trace-length tuning.

Can CY7C1512AV18-250BZXIT operate with only one clock pair instead of two?

Yes-it supports single-clock mode using only K/K to control both input and output registers. In this configuration, C/C are unused, and Q[17:0] are clocked by K/K instead of C/C. However, echo clocks (CQ/CQ) remain functional and synchronized to K/K, preserving source-synchronous capture capability while simplifying clock distribution.

What is the purpose of the BWS[1:0] pins and how do they improve system efficiency?

BWS[1:0] (Byte Write Select) are active-LOW signals that enable selective 9-bit byte writes: BWS0 controls D[8:0], BWS1 controls D[17:9]. When a BWS signal is deasserted, the corresponding byte remains unaltered in memory. This eliminates the need for read-modify-write sequences during partial-word updates-reducing bus traffic and latency in applications like header editing or metadata patching.

CY7C1512AV18-250BZXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1512AV18-250BZXIT FAQ

1.How can I place an order for CY7C1512AV18-250BZXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1512AV18-250BZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1512AV18-250BZXIT reliable?

The price and inventory of CY7C1512AV18-250BZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512AV18-250BZXIT is usually 5 days.

3.What payment methods are accepted for CY7C1512AV18-250BZXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512AV18-250BZXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1512AV18-250BZXIT?

CY7C1512AV18-250BZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1512AV18-250BZXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1512AV18-250BZXIT?

For technical support, including CY7C1512AV18-250BZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512AV18-250BZXIT requirements.

6.How does Aetrix verify that CY7C1512AV18-250BZXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1512AV18-250BZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512AV18-250BZXIT meets industry standards.

7.What is the process for return or replacement of CY7C1512AV18-250BZXIT?

All CY7C1512AV18-250BZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512AV18-250BZXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1512AV18-250BZXIT part is unused and in its original packaging.

Return procedure for CY7C1512AV18-250BZXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1512AV18-250BZXIT Tags

  • CY7C1512AV18-250BZXIT
  • CY7C1512AV18-250BZXIT PDF
  • CY7C1512AV18-250BZXIT Datasheet
  • CY7C1512AV18-250BZXIT Specifications
  • CY7C1512AV18-250BZXIT Images
  • Infineon Technologies
  • Infineon Technologies CY7C1512AV18-250BZXIT
  • Buy CY7C1512AV18-250BZXIT
  • CY7C1512AV18-250BZXIT Price
  • CY7C1512AV18-250BZXIT Distributor
  • CY7C1512AV18-250BZXIT Supplier
  • CY7C1512AV18-250BZXIT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER