Infineon Technologies CY7C1512AV18-250BZXIT
- Part No.:
- CY7C1512AV18-250BZXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1512AV18-250BZXIT.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1512AV18-250BZXIT from Cypress Semiconductor is a 4M × 18 (72-Mbit), 1.8V QDR® II SRAM with independent read/write ports, 250 MHz clock operation, 1.5-cycle read latency (DLL enabled), and DDR interfaces on both ports delivering 500 MT/s effective data rate. It implements synchronous pipelined burst architecture for high-bandwidth networking buffers in packet-switching ASICs.
For engineers reviewing the CY7C1512AV18-250BZXIT datasheet, CY7C1512AV18-250BZXIT pinout, CY7C1512AV18-250BZXIT application, or CY7C1512AV18-250BZXIT equivalent, key selection criteria include dual-clock timing control (K/K, C/C), echo clocks (CQ/CQ) for source-synchronous capture, HSTL-18 I/O compliance, DLL-enabled latency tuning, and 165-ball FBGA package compatibility with depth-expansion port selects (RPS/WPS).
Technical Context
This QDR II SRAM uses separate K/K input clocks to latch address and control signals and independent C/C output clocks to drive Q[17:0] with precise deskew control. Echo clocks CQ/CQ are free-running and synchronized to C/C, enabling controller-side data capture alignment across multiple devices.
The device supports two operational modes: DLL-on mode (1.5-cycle read latency, up to 250 MHz) and DLL-off mode (1-cycle latency, QDR I timing, max 167 MHz). Byte write select pins BWS[1:0] enable selective 9-bit byte updates without read-modify-write overhead.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4M × 18 = 72 Mbit; supports 2-word burst transfers per access |
| Operating Frequency | 250 MHz clock → 500 MT/s effective throughput via DDR on both ports |
| Read Latency | 1.5 cycles (DLL enabled); 1 cycle (DLL disabled via DOFF = LOW) |
| Supply Voltages | Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V for HSTL-18 compliance |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm); RoHS-compliant, Pb-free option available |
| Interface Standard | HSTL Class I inputs/outputs; JTAG 1149.1 test access port included |
| Timing Control | Dual clock domains: K/K for inputs, C/C for outputs; CQ/CQ echo clocks provided |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edges of K/K; support 18-bit parallel writes per burst |
| Q[17:0] | Synchronous read data outputs | Driven on rising edges of C/C; tristated automatically when RPS deasserted |
| RPS / WPS | Read/Write Port Select (active LOW) | Enable independent port activation; allow depth expansion without bus contention |
| BWS[1:0] | Byte Write Select (active LOW) | Control 9-bit sub-word writes: BWS0 → D[8:0], BWS1 → D[17:9] |
| K / K | Positive/Negative input clocks | Capture all synchronous inputs (address, control, data); define write initiation edge |
| C / C | Positive/Negative output clocks | Drive Q[17:0]; used with CQ/CQ for flight-time deskew in multi-device systems |
| CQ / CQ | Echo clocks referenced to C/C | Free-running, source-synchronous clocks for controller-side data capture alignment |
| ZQ | Output impedance calibration input | Connect to external resistor to ground (RQ) to tune Q[17:0]/CQ/CQ output impedance to 0.2×RQ |
| DOFF | DLL disable control (active LOW) | Pull HIGH for QDR II mode (1.5-cycle latency); tie LOW for QDR I mode (1-cycle latency, ≤167 MHz) |
| VREF | HSTL reference voltage input | Static bias point for HSTL I/O threshold setting; must be supplied externally at VDDQ/2 |
Key Features
| Feature | Design Value |
|---|---|
| Independent Read/Write Ports | Eliminates bus turnaround delay and data contention in full-duplex memory access |
| Source-Synchronous Echo Clocks (CQ/CQ) | Enables deterministic, board-level deskew of read data across multiple SRAMs without routing-length matching |
| Programmable DLL Mode (DOFF) | Allows seamless migration between QDR II (250 MHz, 1.5-cycle latency) and QDR I (167 MHz, 1-cycle latency) timing models |
| HSTL-18 I/O with ZQ Calibration | Ensures signal integrity at 500 MT/s by dynamically matching output driver impedance to PCB trace impedance |
| Depth Expansion Support (RPS/WPS) | Permits stacking multiple devices with independent port enables-no external logic required for bank selection |
Applications
| Packet Buffer in Network Switch ASIC | Line Card Memory in Telecom Base Stations |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switch fabric. IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer with concurrent read/write capability for cut-through forwarding. Use Value: 500 MT/s DDR bandwidth and 1.5-cycle latency enable line-rate processing of 10 GbE frames without pipeline stalls. | Use Scenario: Buffering CPRI/Ir interface data between radio units and baseband processors in 4G/LTE macro cells. IC Role / Device Role / Timing Role: Synchronous burst memory supporting deterministic jitter-tolerant data transfer between FPGA and RFIC. Use Value: CQ/CQ echo clocks and DLL-controlled latency ensure sub-nanosecond timing alignment across distributed memory banks. |
| Deep Packet Inspection Engine Cache | High-Speed Test Equipment Pattern Memory |
Use Scenario: Storing signature-matching state tables and temporary packet fragments during real-time DPI scanning. IC Role / Device Role / Timing Role: Low-latency, coherent SRAM accessed simultaneously by multiple inspection threads via dedicated ports. Use Value: Full data coherency and burst-aligned 2-word reads eliminate cache invalidation overhead in multi-threaded pattern lookup. | Use Scenario: Holding stimulus/response vectors for automated test equipment operating at >200 MHz pattern rates. IC Role / Device Role / Timing Role: Deterministic-access memory with guaranteed 1.5-cycle read latency and jitter-immune echo clocking. Use Value: ZQ-calibrated HSTL outputs maintain signal integrity at 500 MT/s, reducing bit-error rates in high-speed ATE channel synchronization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-bit bus width (2M × 36), same 250 MHz speed, but uses SSTL-2 I/O not HSTL-18 | Requires different termination scheme and VTT supply; incompatible with HSTL-18 controller interfaces | Select only if system already uses SSTL-2 infrastructure and 36-bit data path is required |
| ISSI IS61WV102418BLL-10BLI | Asynchronous 1M × 18 SRAM, 10 ns access time, no DDR, no echo clocks, no DLL | Lacks concurrent read/write, burst, or source-synchronous timing - unsuitable for QDR II system architecture | Consider only for legacy designs where QDR II features are unnecessary and bandwidth < 100 MB/s suffices |
Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1512AV18-250BZXIT uniquely delivers HSTL-18–compliant 500 MT/s DDR throughput with echo-clock–assisted capture and programmable DLL latency-enabling deterministic, scalable memory subsystems in high-end networking silicon.
Availability
CY7C1512AV18-250BZXIT is available at Aetrix Electronics and suitable for packet buffering in network switches, line-card memory in telecom base stations, and deep packet inspection engines requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1512AV18-250BZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.
CY7C1512AV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for ultra-low-latency, full-duplex memory subsystems in packet-processing ASICs and FPGA-based networking hardware.
FAQ
What is the function of the DOFF pin on CY7C1512AV18-250BZXIT?
The DOFF (DLL Turn Off) pin is an active-LOW control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. For standard QDR II operation at 250 MHz with 1.5-cycle latency, DOFF must be held HIGH via a ≤10 kΩ pull-up resistor to VDDQ.
How does the ZQ pin affect signal integrity in high-speed designs?
The ZQ pin enables dynamic output impedance calibration: connecting it to a precision resistor (RQ) to ground sets Q[17:0], CQ, and CQ driver impedance to exactly 0.2 × RQ. This matches the SRAM's output drivers to the PCB trace impedance, minimizing reflections and maintaining clean eye diagrams at 500 MT/s-critical for reliable operation without manual trace-length tuning.
Can CY7C1512AV18-250BZXIT operate with only one clock pair instead of two?
Yes-it supports single-clock mode using only K/K to control both input and output registers. In this configuration, C/C are unused, and Q[17:0] are clocked by K/K instead of C/C. However, echo clocks (CQ/CQ) remain functional and synchronized to K/K, preserving source-synchronous capture capability while simplifying clock distribution.
What is the purpose of the BWS[1:0] pins and how do they improve system efficiency?
BWS[1:0] (Byte Write Select) are active-LOW signals that enable selective 9-bit byte writes: BWS0 controls D[8:0], BWS1 controls D[17:9]. When a BWS signal is deasserted, the corresponding byte remains unaltered in memory. This eliminates the need for read-modify-write sequences during partial-word updates-reducing bus traffic and latency in applications like header editing or metadata patching.
CY7C1512AV18-250BZXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1512AV18-250BZXIT FAQ
1.How can I place an order for CY7C1512AV18-250BZXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1512AV18-250BZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of CY7C1512AV18-250BZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512AV18-250BZXIT is usually 5 days.
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5.How can I obtain technical support or documentation for CY7C1512AV18-250BZXIT?
For technical support, including CY7C1512AV18-250BZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512AV18-250BZXIT requirements.
6.How does Aetrix verify that CY7C1512AV18-250BZXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1512AV18-250BZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512AV18-250BZXIT meets industry standards.
7.What is the process for return or replacement of CY7C1512AV18-250BZXIT?
All CY7C1512AV18-250BZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512AV18-250BZXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1512AV18-250BZXIT part is unused and in its original packaging.
Return procedure for CY7C1512AV18-250BZXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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