Infineon Technologies CY7C1512KV18-200BZXC

Overview

CY7C1512KV18-200BZXC from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR® II SRAM with dual independent read/write ports, 200 MHz maximum operating frequency, DDR interfaces on both ports (400 Mbps per pin), and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1512KV18-200BZXC datasheet, CY7C1512KV18-200BZXC pinout, CY7C1512KV18-200BZXC application, or CY7C1512KV18-200BZXC equivalent, key selection criteria include burst depth (2-word), read latency (1 or 1.5 cycles depending on DOFF), VDDQ compatibility (1.4–1.8 V), echo clock support (CQ/CQ), and JTAG 1149.1 testability.

Technical Context

The CY7C1512KV18 implements QDR II architecture with physically separate read and write data paths-eliminating bus turnaround delays. Its synchronous pipelined operation uses two input clocks (K/K) for address/data latching and two output clocks (C/C) plus echo clocks (CQ/CQ) to align data capture timing at the receiver.

Internally, it features a 2M × 18 memory array, self-timed writes, programmable impedance (ZQ), and HSTL-compatible I/Os. Read latency is configurable via DOFF: 1 cycle when LOW (QDR I mode), 1.5 cycles when HIGH (QDR II mode), enabling trade-offs between timing margin and throughput.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXC suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1512KV18-200BZXC uniquely combines DDR bandwidth, echo-clock timing aid, and JTAG testability in a 1.8 V package-making it optimal for new high-speed embedded designs requiring verified signal integrity and production test coverage.

Availability

CY7C1512KV18-200BZXC is available at Aetrix Electronics and suitable for telecom infrastructure, network processor interfacing, high-speed test equipment, and avionics data acquisition requiring stable component supply across extended product lifecycles.

Supply support for CY7C1512KV18-200BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

The QDR II SRAM product line targets systems demanding deterministic, low-latency, concurrent memory access-especially in packet processing, baseband, and instrumentation where DDR SDRAM latency and arbitration overhead are unacceptable.

FAQ

What is the function of the DOFF pin on CY7C1512KV18-200BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables QDR II mode with 1.5-cycle read latency for improved timing margin; when LOW, it selects QDR I mode with 1-cycle latency for minimal delay. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.

Does CY7C1512KV18-200BZXC require external termination resistors?

No-CY7C1512KV18-200BZXC integrates programmable output drive impedance (ZQ) calibration. When enabled, it automatically adjusts output driver strength to match a 50 Ω reference resistor (connected to ZQ pin), eliminating need for discrete series or parallel terminations on data or clock lines.

Can CY7C1512KV18-200BZXC operate with a single clock domain instead of separate K/K and C/C pairs?

Yes-the device supports single-clock-domain operation by tying K to C and K to C. In this mode, read data is registered on the same clock edges as address and write data, simplifying clock distribution at the cost of reduced timing flexibility and potential skew sensitivity compared to dual-domain use.

How does the BWS[1:0] signal differ from NWS in CY7C1512KV18-200BZXC?

CY7C1512KV18-200BZXC uses BWS[1:0] (Byte Write Select) to control two 9-bit lanes (D[8:0], D[17:9]) during writes. Unlike NWS (nibble write select, used only in x8 devices), BWS enables partial 18-bit word updates-e.g., writing only upper or lower byte lane without disturbing the other-preserving data coherency in multi-threaded memory access scenarios.