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Infineon Technologies CY7C1512KV18-250BZC

Part No.:
CY7C1512KV18-250BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1512KV18-250BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,293

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Product details

Overview

CY7C1512KV18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR® II SRAM with dual independent DDR read/write ports, 350 MHz clock support (700 MT/s effective data rate), 1.5-cycle read latency (DOFF = HIGH), and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1512KV18 datasheet, CY7C1512KV18 pinout, CY7C1512KV18 application, or CY7C1512KV18 equivalent, key selection criteria include burst-2 DDR timing compliance, HSTL-15 I/O compatibility, PLL-based echo clock synchronization, and depth expansion via RPS/WPS port selects.

Technical Context

This QDR II SRAM implements fully synchronous pipelined operation with separate K/K clocks for write address/data capture and C/C clocks for read data output registration - eliminating bus turnaround and enabling true concurrent read/write at 350 MHz. The internal PLL aligns CQ/CQ echo clocks to output data edges for reliable capture at 700 MT/s.

It supports two distinct latency modes: 1.5-cycle read latency with DOFF asserted HIGH (for maximum bandwidth), or 1-cycle latency with DOFF LOW (backward compatibility with QDR I systems). Address latching uses a single multiplexed A[20:0] bus sampled on alternating K-clock edges for read/write address separation.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4M × 18-bit (72 Mbit); enables compact high-throughput buffer storage without external width expansion
Max Clock Frequency 350 MHz; supports 700 MT/s DDR transfers per port - critical for 10G+ packet processing pipelines
Read Latency 1.5 cycles (DOFF = HIGH); ensures deterministic timing for pipeline-synchronized data forwarding
I/O Voltage VDDQ = 1.4V to 1.8V; compatible with HSTL-15 (1.5V) and SSTL-18 (1.8V) system interfaces
Core Voltage VDD = 1.8V ±0.1V; low-power operation with stable timing margin across industrial temperature range
Package 165-ball FBGA (13 × 15 × 1.4 mm); RoHS-compliant footprint with thermal vias for sustained 350 MHz operation
Burst Length 2-word fixed burst; minimizes address overhead and guarantees predictable access timing per transaction

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input 18-bit parallel data sampled on rising edge of K clock; supports full-width or byte-selectable writes via BWS[1:0]
A[20:0] Multiplexed address input 21-bit address latched on alternating K-clock edges for read/write separation - no external address demux needed
K / K Write/read clock inputs Dual differential clock pair; rising edges control all synchronous inputs - eliminates setup/hold skew between ports
C / C Read data output clocks Output-register clocks aligned to data valid window; used with echo clocks (CQ/CQ) for source-synchronous capture
CQ / CQ Echo clocks Delayed copies of C/C outputs; simplify PCB routing and timing closure for high-speed FPGA/ASIC receivers
RPS / WPS Port select controls Active-low signals enabling independent depth expansion - allows stacking multiple devices without address overlap
BWS[1:0] Byte write selects Two active-low signals controlling D[8:0] and D[17:9]; enable partial writes without read-modify-write overhead
DOFF Read latency mode select High = 1.5-cycle latency (QDR II mode); Low = 1-cycle latency (QDR I compatibility)

Key Features

Feature Design Value
Independent Read/Write Ports Eliminates bus turnaround delay - enables simultaneous 700 MT/s read and write on same cycle
PLL-Based Echo Clock Generation Internal PLL locks CQ/CQ to output data edges - removes need for external delay-matched clock routing
Variable Drive HSTL Outputs Programmable output strength matches trace impedance - reduces signal integrity issues at 700 MT/s
JTAG 1149.1 Boundary Scan Full IEEE 1149.1 compliance enables production testability and interconnect validation on dense BGA layouts
Self-Timed Write Circuitry On-chip write timing control ensures consistent pulse width and setup/hold margins across voltage/temperature

Applications

Telecom Line Card Buffering Network Processor Interface

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/40G Ethernet switch fabric ASICs.

IC Role / Device Role / Timing Role: High-speed dual-port SRAM acting as pipeline register between parser and scheduler blocks.

Use Value: Concurrent 700 MT/s reads/writes eliminate serialization bottlenecks, enabling line-rate packet classification.

Use Scenario: Interfacing multi-core network processors requiring low-latency shared memory for flow state tables.

IC Role / Device Role / Timing Role: Synchronous memory co-processor with deterministic 1.5-cycle read latency for real-time lookup operations.

Use Value: Eliminates arbitration delays inherent in DRAM or single-port SRAM - improves worst-case packet processing jitter.

Baseband Digital Front-End Test Equipment Pattern Memory

Use Scenario: Real-time buffering of IQ samples between ADC/DAC and FPGA-based digital up/down converters in 5G NR radios.

IC Role / Device Role / Timing Role: Burst-2 DDR memory providing time-aligned sample streams to parallel processing lanes.

Use Value: Fixed 2-word burst matches typical FFT/IFFT block sizes - reduces address generation logic and increases throughput efficiency.

Use Scenario: Storing high-speed stimulus/response patterns in automated test equipment (ATE) for SoC validation.

IC Role / Device Role / Timing Role: Deterministic latency memory enabling precise timing correlation between pattern generator and comparator.

Use Value: 1.5-cycle read latency and echo clocks allow sub-nanosecond timing resolution - critical for <100 ps edge placement accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-bit width, 10 ns access, LVDS I/O, no echo clocks or PLL; asynchronous control interface Targeted at legacy test equipment with fixed timing budgets; lacks QDR II's concurrent DDR capability Select only when backward compatibility with non-pipelined designs is required and bandwidth ≤ 400 MT/s suffices
ISSI IS61WV102418BLL-10BLI 1M × 18-bit, 10 ns async SRAM, 3.3V core/I/O, no DDR or burst; single-port architecture Suitable for low-cost control-plane buffers where concurrency and speed are not critical Choose only for cost-sensitive, non-real-time applications where 700 MT/s bandwidth and dual-port operation are unnecessary

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1512KV18 uniquely delivers concurrent 700 MT/s DDR read/write with echo-clock–assisted timing closure - essential for modern packet-processing and RF signal chain designs.

Availability

CY7C1512KV18 is available at Aetrix Electronics and suitable for telecom infrastructure, network processor interfacing, baseband digital front-end, and high-speed ATE requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1512KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

CY7C1512KV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic, high-bandwidth packet buffering and real-time signal processing in networking and wireless infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1512KV18?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for optimal QDR II performance; when LOW, it reverts to 1-cycle latency for QDR I compatibility. This setting directly affects timing budget allocation in the memory controller and must be held stable during operation.

How does the CY7C1512KV18 handle partial writes?

Partial writes are controlled by BWS[1:0] (Byte Write Select) pins: BWS0 enables writing to D[8:0], and BWS1 enables D[17:9]. Both must be deasserted to inhibit all writes. Unlike nibble-select SRAMs, this device performs true byte masking without read-modify-write cycles - preserving unselected data bits atomically.

Can CY7C1512KV18 operate with only one clock domain (K = C)?

Yes - the device supports single-clock-domain operation where K and C are tied together. In this mode, the internal PLL is bypassed, and CQ/CQ become delayed versions of C. However, maximum frequency drops to 250 MHz due to reduced timing margin, and echo-clock benefits for FPGA capture are diminished.

What is the purpose of NC/144M and NC/288M balls on the FBGA package?

NC/144M and NC/288M are no-connect balls not bonded to the die; they may be left floating or tied to ground/VSS per PCB layout requirements. These positions accommodate pin-compatible variants (e.g., CY7C1510KV18) within the same package footprint - enabling design reuse across density options without board redesign.

CY7C1512KV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1512KV18-250BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1512KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1512KV18-250BZC reliable?

The price and inventory of CY7C1512KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512KV18-250BZC is usually 5 days.

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CY7C1512KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1512KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1512KV18-250BZC?

For technical support, including CY7C1512KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512KV18-250BZC requirements.

6.How does Aetrix verify that CY7C1512KV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1512KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512KV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1512KV18-250BZC?

All CY7C1512KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512KV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1512KV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1512KV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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