Infineon Technologies CY7C1512KV18-250BZCT
- Part No.:
- CY7C1512KV18-250BZCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1512KV18-250BZCT.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1512KV18-250BZCT from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 250 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (500 Mbps per pin), and 1.8V core / 1.4–1.8V I/O supply. It delivers concurrent read-write transactions with 1.5-cycle read latency (DOFF = HIGH) for high-throughput packet buffering in network line cards.
For engineers reviewing the CY7C1512KV18-250BZCT datasheet, CY7C1512KV18-250BZCT pinout, CY7C1512KV18-250BZCT application, or CY7C1512KV18-250BZCT equivalent, key selection criteria include burst depth (2-word), echo clock support (CQ/CQ), JTAG 1149.1 testability, PLL-based data alignment, and FBGA-165 package compatibility with high-speed PCB layout constraints.
Technical Context
This QDR II SRAM implements fully independent synchronous read and write pipelines with dual clock domains: K/K for address/data input timing and C/C for output timing-enabling precise skew control. Its internal self-timed write circuitry eliminates external write pulse width constraints.
The device uses a single multiplexed address bus latched on alternating rising edges of K/K, supports depth expansion via RPS/WPS signals, and maintains full data coherency across concurrent accesses. DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4M × 18-bit (72 Mbit) - provides 72-bit-wide data path per access with 2-word burst transfer |
| Max Clock Frequency | 250 MHz - enables 500 MT/s effective data rate per pin using DDR interface |
| Read Latency | 1.5 cycles (DOFF = HIGH) - aligns output data to C/C clocks for reliable capture in high-speed systems |
| Supply Voltages | VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports mixed-signal SoC interfacing with 1.5V or 1.8V I/O standards |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for controlled impedance routing and thermal dissipation in dense networking PCBs |
| Interface Standard | HSTL Class I outputs with programmable drive strength - ensures signal integrity at 500 Mbps with matched termination |
| JTAG Support | IEEE 1149.1 compliant TAP controller - enables boundary scan testing without requiring functional access |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | 18-bit parallel data sampled on rising edge of K clock; supports byte-selectable writes via BWS[1:0] |
| Q[17:0] | Synchronous read data outputs | 18-bit parallel DDR outputs aligned to C/C clocks; echo clocks CQ/CQ simplify latch timing |
| A[20:0] | Multiplexed address inputs | 21-bit address latched on alternating rising edges of K/K for read/write port separation |
| WPS | Write port select | Active-low signal enabling write operations; deassertion blocks D[17:0] sampling and write execution |
| RPS | Read port select | Active-low signal enabling read operations; deassertion disables Q[17:0] output drivers |
| BWS[1:0] | Byte write select | Two active-low signals controlling which 9-bit byte (D[8:0] or D[17:9]) is written during each burst cycle |
| DOFF | Read latency mode control | High = 1.5-cycle latency (optimized for C/C-aligned capture); Low = 1-cycle latency (QDR I compatibility) |
| CQ, CQ | Echo clocks | Output copies of C/C clocks, routed alongside Q[17:0], to eliminate flight time mismatch in receiver capture |
| K, K | Input clocks | Dual-phase clocks driving all synchronous inputs; only rising edges used for register sampling |
| C, C | Output clocks | Dual-phase clocks driving output registers; enable precise DDR edge placement relative to Q[17:0] |
| TCK, TMS, TDI, TDO | JTAG test interface | IEEE 1149.1 boundary scan access for production test and debug without functional operation |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Eliminates bus turnaround delays, enabling true concurrent read+write at full bandwidth |
| 2-word burst architecture | Guarantees minimum 36-bit data transfer per access, reducing address overhead in streaming applications |
| PLL-based data placement | Aligns output data edges within ±50 ps of C/C clock edges for robust 500 Mbps capture margin |
| Variable-drive HSTL outputs | Configurable output strength matches trace impedance (40–60 Ω), minimizing reflections on long memory buses |
| Depth expansion support | RPS/WPS pins allow stacking multiple devices for wider or deeper memory configurations without external logic |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packets in 10G/40G Ethernet switch ASICs with real-time traffic shaping. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared buffer between ingress parser and egress scheduler engines. Use Value: 250 MHz DDR interface delivers 9 Gbps aggregate bandwidth across 18-bit bus, sustaining line-rate packet buffering without stalls. |
Use Scenario: Frame buffering in OTN framer/demapper modules handling OC-192/STM-64 payloads. IC Role / Device Role / Timing Role: Dual-port SRAM acting as elastic store to absorb phase misalignment between upstream/downstream clock domains. Use Value: Independent read/write ports with echo clocks (CQ/CQ) enable jitter-tolerant data capture across asynchronous timing boundaries. |
| Baseband Processing Memory | Test Equipment Pattern Memory |
|
Use Scenario: Temporary storage of IQ samples in LTE/5G massive MIMO baseband processors during FFT/IFFT pipeline stages. IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced directly to FPGA-based DSP cores. Use Value: 1.5-cycle read latency (DOFF = HIGH) synchronized to C/C clocks reduces FPGA logic delay in sample-forwarding paths. |
Use Scenario: Storing high-speed digital stimulus/response patterns in automated test equipment (ATE) channel cards. IC Role / Device Role / Timing Role: Deterministic-access memory providing glitch-free pattern replay at 500 Mbps per pin. Use Value: JTAG 1149.1 support enables in-system verification of memory integrity without halting test execution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C36256P-250BIN | 256K × 36-bit (9-Mbit), 250 MHz, single-ended LVCMOS I/O, no echo clocks or PLL | Lacks QDR II's concurrent read/write capability; requires external arbitration for bidirectional traffic | Select when cost-sensitive designs tolerate lower density and simplified timing at expense of throughput |
| IS61WV102418BLL-250BLI | 1M × 18-bit (18-Mbit), 250 MHz, common I/O bus, 2-cycle read latency, no burst mode | Requires bus turnaround; incompatible with QDR II protocol stack and echo clock layout | Choose only for legacy system upgrades where pinout and command protocol must match existing design |
Compared with AS7C36256P-250BIN and IS61WV102418BLL-250BLI, CY7C1512KV18-250BZCT uniquely delivers 72-Mbit density with true concurrent access, echo-clock–assisted timing closure, and QDR II–specific burst protocol-making it irreplaceable in new high-throughput packet processing architectures.
Availability
CY7C1512KV18-250BZCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and test equipment pattern memory requiring stable component supply across multi-year production cycles.
Supply support for CY7C1512KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with headquarters in San Jose, CA.
CY7C1512KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in packet-switched infrastructure where concurrent read/write throughput is critical.
FAQ
What is the function of the DOFF pin on CY7C1512KV18-250BZCT?
The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency synchronized to C/C clocks for optimal timing margin in high-speed systems; when LOW, it reverts to 1-cycle latency for QDR I compatibility. This setting directly affects setup/hold timing margins at the receiving device and must be fixed during power-up configuration.
How does the CY7C1512KV18-250BZCT handle byte-level write masking?
It uses two active-low Byte Write Select signals-BWS0 and BWS1-each controlling a 9-bit segment of the 18-bit D[17:0] bus. BWS0 enables writes to D[8:0], and BWS1 enables writes to D[17:9]. When either signal is deasserted, the corresponding byte remains unaltered, preserving prior data without requiring a read-modify-write sequence.
Can CY7C1512KV18-250BZCT operate with only one clock domain (K and C tied together)?
Yes-the device supports single-clock-domain operation by tying K to C and K to C, though this sacrifices skew optimization. In this mode, output data is still double-data-rate but aligned to the same clock edges as inputs, reducing timing margin compared to dual-clock operation with dedicated C/C for outputs and K/K for inputs.
What is the purpose of the NC/144M and NC/288M balls on the FBGA package?
These are no-connect balls not bonded to the die; they may be left floating or tied to ground/VSS per board layout requirements. Their presence accommodates pinout scalability across the QDR II family (e.g., CY7C1510KV18 uses NC/144M for 8M×8 configuration). They carry no electrical function and require no termination.
CY7C1512KV18-250BZCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1512KV18-250BZCT FAQ
1.How can I place an order for CY7C1512KV18-250BZCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1512KV18-250BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1512KV18-250BZCT reliable?
The price and inventory of CY7C1512KV18-250BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512KV18-250BZCT is usually 5 days.
3.What payment methods are accepted for CY7C1512KV18-250BZCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512KV18-250BZCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1512KV18-250BZCT?
CY7C1512KV18-250BZCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1512KV18-250BZCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1512KV18-250BZCT?
For technical support, including CY7C1512KV18-250BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512KV18-250BZCT requirements.
6.How does Aetrix verify that CY7C1512KV18-250BZCT is sourced from the original manufacturer or authorized distributors?
All CY7C1512KV18-250BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512KV18-250BZCT meets industry standards.
7.What is the process for return or replacement of CY7C1512KV18-250BZCT?
All CY7C1512KV18-250BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512KV18-250BZCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1512KV18-250BZCT part is unused and in its original packaging.
Return procedure for CY7C1512KV18-250BZCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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