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Infineon Technologies CY7C1512KV18-250BZCT

Part No.:
CY7C1512KV18-250BZCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1512KV18-250BZCT.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,836

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Product details

Overview

CY7C1512KV18-250BZCT from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 250 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (500 Mbps per pin), and 1.8V core / 1.4–1.8V I/O supply. It delivers concurrent read-write transactions with 1.5-cycle read latency (DOFF = HIGH) for high-throughput packet buffering in network line cards.

For engineers reviewing the CY7C1512KV18-250BZCT datasheet, CY7C1512KV18-250BZCT pinout, CY7C1512KV18-250BZCT application, or CY7C1512KV18-250BZCT equivalent, key selection criteria include burst depth (2-word), echo clock support (CQ/CQ), JTAG 1149.1 testability, PLL-based data alignment, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements fully independent synchronous read and write pipelines with dual clock domains: K/K for address/data input timing and C/C for output timing-enabling precise skew control. Its internal self-timed write circuitry eliminates external write pulse width constraints.

The device uses a single multiplexed address bus latched on alternating rising edges of K/K, supports depth expansion via RPS/WPS signals, and maintains full data coherency across concurrent accesses. DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4M × 18-bit (72 Mbit) - provides 72-bit-wide data path per access with 2-word burst transfer
Max Clock Frequency 250 MHz - enables 500 MT/s effective data rate per pin using DDR interface
Read Latency 1.5 cycles (DOFF = HIGH) - aligns output data to C/C clocks for reliable capture in high-speed systems
Supply Voltages VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports mixed-signal SoC interfacing with 1.5V or 1.8V I/O standards
Package 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for controlled impedance routing and thermal dissipation in dense networking PCBs
Interface Standard HSTL Class I outputs with programmable drive strength - ensures signal integrity at 500 Mbps with matched termination
JTAG Support IEEE 1149.1 compliant TAP controller - enables boundary scan testing without requiring functional access

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs 18-bit parallel data sampled on rising edge of K clock; supports byte-selectable writes via BWS[1:0]
Q[17:0] Synchronous read data outputs 18-bit parallel DDR outputs aligned to C/C clocks; echo clocks CQ/CQ simplify latch timing
A[20:0] Multiplexed address inputs 21-bit address latched on alternating rising edges of K/K for read/write port separation
WPS Write port select Active-low signal enabling write operations; deassertion blocks D[17:0] sampling and write execution
RPS Read port select Active-low signal enabling read operations; deassertion disables Q[17:0] output drivers
BWS[1:0] Byte write select Two active-low signals controlling which 9-bit byte (D[8:0] or D[17:9]) is written during each burst cycle
DOFF Read latency mode control High = 1.5-cycle latency (optimized for C/C-aligned capture); Low = 1-cycle latency (QDR I compatibility)
CQ, CQ Echo clocks Output copies of C/C clocks, routed alongside Q[17:0], to eliminate flight time mismatch in receiver capture
K, K Input clocks Dual-phase clocks driving all synchronous inputs; only rising edges used for register sampling
C, C Output clocks Dual-phase clocks driving output registers; enable precise DDR edge placement relative to Q[17:0]
TCK, TMS, TDI, TDO JTAG test interface IEEE 1149.1 boundary scan access for production test and debug without functional operation

Key Features

Feature Design Value
Separate read/write data ports Eliminates bus turnaround delays, enabling true concurrent read+write at full bandwidth
2-word burst architecture Guarantees minimum 36-bit data transfer per access, reducing address overhead in streaming applications
PLL-based data placement Aligns output data edges within ±50 ps of C/C clock edges for robust 500 Mbps capture margin
Variable-drive HSTL outputs Configurable output strength matches trace impedance (40–60 Ω), minimizing reflections on long memory buses
Depth expansion support RPS/WPS pins allow stacking multiple devices for wider or deeper memory configurations without external logic

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packets in 10G/40G Ethernet switch ASICs with real-time traffic shaping.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared buffer between ingress parser and egress scheduler engines.

Use Value: 250 MHz DDR interface delivers 9 Gbps aggregate bandwidth across 18-bit bus, sustaining line-rate packet buffering without stalls.

Use Scenario: Frame buffering in OTN framer/demapper modules handling OC-192/STM-64 payloads.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as elastic store to absorb phase misalignment between upstream/downstream clock domains.

Use Value: Independent read/write ports with echo clocks (CQ/CQ) enable jitter-tolerant data capture across asynchronous timing boundaries.

Baseband Processing Memory Test Equipment Pattern Memory

Use Scenario: Temporary storage of IQ samples in LTE/5G massive MIMO baseband processors during FFT/IFFT pipeline stages.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced directly to FPGA-based DSP cores.

Use Value: 1.5-cycle read latency (DOFF = HIGH) synchronized to C/C clocks reduces FPGA logic delay in sample-forwarding paths.

Use Scenario: Storing high-speed digital stimulus/response patterns in automated test equipment (ATE) channel cards.

IC Role / Device Role / Timing Role: Deterministic-access memory providing glitch-free pattern replay at 500 Mbps per pin.

Use Value: JTAG 1149.1 support enables in-system verification of memory integrity without halting test execution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C36256P-250BIN 256K × 36-bit (9-Mbit), 250 MHz, single-ended LVCMOS I/O, no echo clocks or PLL Lacks QDR II's concurrent read/write capability; requires external arbitration for bidirectional traffic Select when cost-sensitive designs tolerate lower density and simplified timing at expense of throughput
IS61WV102418BLL-250BLI 1M × 18-bit (18-Mbit), 250 MHz, common I/O bus, 2-cycle read latency, no burst mode Requires bus turnaround; incompatible with QDR II protocol stack and echo clock layout Choose only for legacy system upgrades where pinout and command protocol must match existing design

Compared with AS7C36256P-250BIN and IS61WV102418BLL-250BLI, CY7C1512KV18-250BZCT uniquely delivers 72-Mbit density with true concurrent access, echo-clock–assisted timing closure, and QDR II–specific burst protocol-making it irreplaceable in new high-throughput packet processing architectures.

Availability

CY7C1512KV18-250BZCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and test equipment pattern memory requiring stable component supply across multi-year production cycles.

Supply support for CY7C1512KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with headquarters in San Jose, CA.

CY7C1512KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in packet-switched infrastructure where concurrent read/write throughput is critical.

FAQ

What is the function of the DOFF pin on CY7C1512KV18-250BZCT?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency synchronized to C/C clocks for optimal timing margin in high-speed systems; when LOW, it reverts to 1-cycle latency for QDR I compatibility. This setting directly affects setup/hold timing margins at the receiving device and must be fixed during power-up configuration.

How does the CY7C1512KV18-250BZCT handle byte-level write masking?

It uses two active-low Byte Write Select signals-BWS0 and BWS1-each controlling a 9-bit segment of the 18-bit D[17:0] bus. BWS0 enables writes to D[8:0], and BWS1 enables writes to D[17:9]. When either signal is deasserted, the corresponding byte remains unaltered, preserving prior data without requiring a read-modify-write sequence.

Can CY7C1512KV18-250BZCT operate with only one clock domain (K and C tied together)?

Yes-the device supports single-clock-domain operation by tying K to C and K to C, though this sacrifices skew optimization. In this mode, output data is still double-data-rate but aligned to the same clock edges as inputs, reducing timing margin compared to dual-clock operation with dedicated C/C for outputs and K/K for inputs.

What is the purpose of the NC/144M and NC/288M balls on the FBGA package?

These are no-connect balls not bonded to the die; they may be left floating or tied to ground/VSS per board layout requirements. Their presence accommodates pinout scalability across the QDR II family (e.g., CY7C1510KV18 uses NC/144M for 8M×8 configuration). They carry no electrical function and require no termination.

CY7C1512KV18-250BZCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1512KV18-250BZCT FAQ

1.How can I place an order for CY7C1512KV18-250BZCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1512KV18-250BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1512KV18-250BZCT reliable?

The price and inventory of CY7C1512KV18-250BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512KV18-250BZCT is usually 5 days.

3.What payment methods are accepted for CY7C1512KV18-250BZCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512KV18-250BZCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1512KV18-250BZCT?

CY7C1512KV18-250BZCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1512KV18-250BZCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1512KV18-250BZCT?

For technical support, including CY7C1512KV18-250BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512KV18-250BZCT requirements.

6.How does Aetrix verify that CY7C1512KV18-250BZCT is sourced from the original manufacturer or authorized distributors?

All CY7C1512KV18-250BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512KV18-250BZCT meets industry standards.

7.What is the process for return or replacement of CY7C1512KV18-250BZCT?

All CY7C1512KV18-250BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512KV18-250BZCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1512KV18-250BZCT part is unused and in its original packaging.

Return procedure for CY7C1512KV18-250BZCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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