Infineon Technologies CY7C1512KV18-250BZI
- Part No.:
- CY7C1512KV18-250BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1512KV18-250BZI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1512KV18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR® II SRAM with independent read/write ports, 250 MHz operation (4 ns cycle time), DDR interfaces on both ports (500 Mbps per pin), and 1.5-cycle read latency when DOFF = HIGH. It delivers high-bandwidth buffering for network packet processors in telecom line cards.
For engineers reviewing the CY7C1512KV18 datasheet, CY7C1512KV18 pinout, CY7C1512KV18 application, or CY7C1512KV18 equivalent, key selection criteria include burst-2 QDR timing compliance, FBGA-165 package compatibility, 1.8V core / 1.4–1.8V I/O voltage support, and synchronous self-timed write capability.
Technical Context
This SRAM implements true dual-port QDR II architecture: separate K/K clocks drive address/data latching on rising edges only, while C/C clocks control output registers to minimize skew. The device uses echo clocks (CQ/CQ) and a PLL for precise data placement at 500 Mbps per pin.
It supports depth expansion via RPS/WPS port selects and byte-level write masking (BWS[1:0]) for partial-word updates. All operations are fully synchronous with no bus turnaround, enabling concurrent read/write transactions without arbitration overhead.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4M × 18-bit (72 Mbit) - provides 72-bit-wide data path per access with 2-word burst |
| Max Clock Frequency | 250 MHz - defines 4 ns cycle time; enables 500 MT/s per pin via DDR interface |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable timing mode for system synchronization |
| Supply Voltages | VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports mixed-voltage I/O interfacing with 1.5V or 1.8V systems |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density routing in telecom PCBs |
| Interface Standard | HSTL Class I - ensures signal integrity at 500 Mbps with variable-drive output buffers |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing and production validation |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | 18-bit parallel data sampled on rising edge of K clock; supports full or partial writes via BWS[1:0] |
| Q[17:0] | Synchronous read data output | 18-bit parallel data driven on rising edge of C clock; synchronized to echo clock CQ |
| K / K | Input clock pair | Rising-edge-triggered clocks for address/data capture; K used for read, K for write addressing |
| C / C | Output clock pair | Rising-edge-triggered clocks for output register control; minimizes flight-time mismatch with CQ/CQ |
| CQ / CQ | Echo clock outputs | Source-synchronous clocks aligned to Q[17:0] edges; simplify high-speed data capture in FPGA/ASIC receivers |
| WPS | Write port select | Active-low signal enabling write transaction; deassertion disables D[17:0] sampling and write execution |
| RPS | Read port select | Active-low signal enabling read transaction; deassertion blanks Q[17:0] outputs to high-impedance |
| BWS[1:0] | Byte write select | Two active-low signals controlling 9-bit byte segments: BWS0 → D[8:0], BWS1 → D[17:9] |
| DOFF | Read latency mode control | High = 1.5-cycle latency (for timing margin); Low = 1-cycle latency (for minimal latency) |
| VDD / VDDQ | Power supplies | VDD = 1.8 V core supply; VDDQ = 1.4–1.8 V I/O supply - decoupled domains enable mixed-voltage interoperability |
Key Features
| Feature | Design Value |
|---|---|
| Independent Read/Write Ports | Enables simultaneous 18-bit read and 18-bit write in same cycle - eliminates bus turnaround delay in packet buffering |
| 2-Word Burst Architecture | Every access transfers two consecutive 18-bit words - doubles effective throughput vs. single-word devices |
| Synchronous Self-Timed Writes | On-chip write timing control ensures reliable setup/hold margins without external write-strobe generation |
| Programmable Impedance Outputs | HSTL Class I drivers with adjustable strength - matches trace impedance to reduce reflections at 500 Mbps |
| PLL-Based Data Placement | Internal PLL aligns CQ/CQ edges to Q[17:0] transitions - enables deterministic capture in high-speed SerDes receivers |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet switch ASICs. IC Role / Device Role / Timing Role: High-throughput, low-latency dual-port SRAM acting as first-level packet buffer between MAC and traffic manager. Use Value: Concurrent read/write at 500 MT/s per pin eliminates serialization bottlenecks and reduces packet drop rate under bursty traffic. |
Use Scenario: Frame buffering in OTN/framer-based optical transport equipment with strict jitter tolerance. IC Role / Device Role / Timing Role: Synchronous memory providing deterministic 1.5-cycle read latency for time-sensitive cell scheduling logic. Use Value: Echo clocks (CQ/CQ) and PLL alignment ensure <±50 ps data valid window - meets ITU-T G.823 jitter specs. |
| Baseband Processing Cache | Test Equipment Pattern Memory |
|
Use Scenario: Temporary storage of LTE/5G channel estimation coefficients during real-time baseband processing. IC Role / Device Role / Timing Role: Burst-access SRAM interfaced to FPGA-based DSP engine with separate read/write address buses. Use Value: 250 MHz clock + DDR yields 9 Gbps aggregate bandwidth - sustains multi-carrier FFT/IFFT pipeline throughput. |
Use Scenario: Storing high-speed digital test vectors in ATE systems requiring precise timing repeatability. IC Role / Device Role / Timing Role: Deterministic-latency memory referenced by pattern generator sequencer with sub-nanosecond edge alignment. Use Value: JTAG 1149.1 support enables in-system verification of vector integrity; HSTL I/O ensures <10 ps skew across 18-bit bus. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-bit × 2M, 10 ns access, 3.3V core, LVDS I/O - lacks echo clocks and programmable latency mode | Requires external clock forwarding; not suitable for sub-1-cycle latency-critical designs | Prefer for legacy 3.3V systems where LVDS signaling and larger word width outweigh latency flexibility needs |
| ISSI IS61WV102418BLL-10BLI | 1M × 18-bit, 10 ns async SRAM, 3.3V/2.5V, no DDR or burst - lower density, no QDR timing | No concurrent read/write; unsuitable for packet buffering requiring >1 Gbps sustained bandwidth | Only viable for cost-sensitive, low-bandwidth control-plane memory where QDR features are unnecessary |
Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1512KV18 uniquely combines 72-Mbit density, 250 MHz QDR II timing, echo clocks, and selectable 1/1.5-cycle latency - making it the only option meeting telecom packet processor bandwidth and jitter requirements.
Availability
CY7C1512KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and ATE pattern memory requiring stable component supply across extended product lifecycles.
Supply support for CY7C1512KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
CY7C1512KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, high-bandwidth data buffering in networking and telecom infrastructure where concurrent read/write and sub-5 ns timing precision are mandatory.
FAQ
What is the function of the DOFF pin on CY7C1512KV18?
The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, the device operates with 1.5-cycle read latency to accommodate tighter timing margins in high-speed systems; when LOW, it delivers 1-cycle latency for minimal delay. This setting directly affects the C-clock-to-Q-output delay and must be configured before initialization.
How does the CY7C1512KV18 handle partial-word writes?
Partial-word writes are controlled by BWS[1:0] (Byte Write Select) inputs: BWS0 enables writing to D[8:0], BWS1 enables D[17:9]. Both signals are sampled synchronously with K clock edges. When a BWS bit is deasserted, the corresponding 9-bit segment remains unaltered - preserving existing data without requiring read-modify-write cycles.
Can CY7C1512KV18 operate with only one clock domain (K = C)?
Yes - the device supports single-clock-domain operation where K and C are tied together. In this mode, the internal PLL is bypassed, and output registers are clocked directly by the shared K/C input. However, echo clocks (CQ/CQ) remain functional and aligned to Q[17:0] edges, preserving source-synchronous capture capability.
What is the purpose of the NC/144M and NC/288M pins?
NC/144M and NC/288M are no-connect balls not bonded to the die. They may be left floating or tied to any voltage level (VSS, VDD, or VDDQ) without affecting operation. These pins exist for package compatibility across the CY7C15xxKV18 family and have no electrical function in CY7C1512KV18.
CY7C1512KV18-250BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1512KV18-250BZI FAQ
1.How can I place an order for CY7C1512KV18-250BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1512KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1512KV18-250BZI reliable?
The price and inventory of CY7C1512KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512KV18-250BZI is usually 5 days.
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Once your CY7C1512KV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1512KV18-250BZI?
For technical support, including CY7C1512KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512KV18-250BZI requirements.
6.How does Aetrix verify that CY7C1512KV18-250BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1512KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512KV18-250BZI meets industry standards.
7.What is the process for return or replacement of CY7C1512KV18-250BZI?
All CY7C1512KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512KV18-250BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1512KV18-250BZI part is unused and in its original packaging.
Return procedure for CY7C1512KV18-250BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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