Infineon Technologies CY7C1512KV18-250BZIT

Overview

CY7C1512KV18-250BZIT from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR® II SRAM with dual independent DDR read/write ports, 250 MHz clock operation (500 MT/s per port), 1.5-cycle read latency when DOFF = HIGH, and HSTL-compatible I/O supporting 1.4–1.8V VDDQ. It delivers high-bandwidth buffering for network packet processing in telecom line cards.

For engineers reviewing the CY7C1512KV18-250BZIT datasheet, CY7C1512KV18-250BZIT pinout, CY7C1512KV18-250BZIT application, or CY7C1512KV18-250BZIT equivalent, key selection criteria include burst depth (2-word), synchronous self-timed write timing, echo clock (CQ) support for source-synchronous capture, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements separate read and write address/data paths with fully pipelined, synchronous operation-no bus turnaround required. It uses two independent input clocks (K/K̄) for address/data latching and two output clocks (C/C̄) plus echo clocks (CQ/CQ̄) to align data capture at the receiver.

The device integrates a PLL for precise internal data placement, supports programmable drive strength via ZQ calibration, and provides full data coherency across concurrent read/write transactions. Depth expansion is enabled by RPS/WPS control signals, and byte write masking is implemented via BWS[1:0] inputs for 18-bit data width.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free termination.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with AS7C36256P-250BIN and IS61WV102418BLL-250TQLI, CY7C1512KV18-250BZIT uniquely balances 72-Mbit capacity, 250 MHz QDR II performance, selectable read latency, and echo-clock–enabled signal integrity-making it optimal for mid-bandwidth telecom and test equipment designs requiring proven reliability and mature ecosystem support.

Availability

CY7C1512KV18-250BZIT is available at Aetrix Electronics and suitable for telecom infrastructure, network processor interfacing, wireless baseband processing, and high-speed test equipment requiring stable component supply and long-term industrial availability.

Supply support for CY7C1512KV18-250BZIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets, with headquarters in San Jose, CA.

The QDR® II SRAM product line targets high-speed packet buffering and real-time data streaming applications where deterministic latency, concurrent access, and signal integrity at multi-Gbps rates are critical.

FAQ

What is the function of the DOFF pin on CY7C1512KV18-250BZIT?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle read latency for improved timing margin; when LOW, it enables 1-cycle latency for minimum delay. This setting directly affects the number of K-clock cycles between address assertion and valid Q[17:0] output, and must be held stable during operation.

How does the ZQ pin enable impedance calibration?

The ZQ pin connects to an external 240 Ω resistor to ground, allowing the device to calibrate its HSTL output driver strength against process/voltage/temperature variation. Calibration occurs automatically at power-up and can be retriggered via JTAG instruction, ensuring consistent 25 Ω (±15%) output impedance for signal integrity across operating conditions.

Can CY7C1512KV18-250BZIT operate with only one clock domain?

Yes-it supports Single Clock Mode where K and C are tied together (and K̄ and C̄ tied together), eliminating need for separate read/write clocks. In this mode, the device behaves like a standard synchronous SRAM with shared clocking, though DDR bandwidth and echo clock benefits are forfeited. Refer to Functional Description section "Single Clock Mode" in datasheet for timing constraints.

What is the purpose of BWS[1:0] in the 18-bit configuration?

BWS[1:0] are active-low byte write select signals that control which 9-bit subword of the 18-bit D[17:0] bus is written during each 2-word burst: BWS0 enables D[8:0], BWS1 enables D[17:9]. Both must be asserted to write full 18-bit words; deasserting either masks the corresponding subword, preserving prior data-enabling partial-word updates without read-modify-write cycles.