Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1512KV18-250BZXI

Part No.:
CY7C1512KV18-250BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1512KV18-250BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,052

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1512KV18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR® II SRAM with dual independent DDR read/write ports, 250 MHz clock operation (500 MT/s per port), 1.5-cycle read latency (DOFF = HIGH), and HSTL-compatible I/O supporting 1.4–1.8V VDDQ. It enables high-throughput packet buffering in network line cards.

For engineers reviewing the CY7C1512KV18 datasheet, CY7C1512KV18 pinout, CY7C1512KV18 application, or CY7C1512KV18 equivalent, key selection criteria include burst-2 DDR timing compliance, FBGA-165 package compatibility, 1.5-cycle vs. 1-cycle latency mode selection via DOFF, and depth expansion support via RPS/WPS signals.

Technical Context

This QDR II SRAM implements fully synchronous, pipelined access with separate K/K clocks for write address/data capture and C/C clocks for read data output-enabling concurrent read/write transactions without bus turnaround. The internal PLL ensures precise 700 MHz DDR edge placement relative to input clocks.

It uses a single multiplexed address bus latched on alternating K-clock edges for read and write addresses, and supports byte-write masking via four BWS inputs (BWS0–BWS3) for selective 18-bit word updates. Core logic operates at 1.8V ±0.1V; I/Os are HSTL-compliant with programmable drive strength and ZQ calibration.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4M × 18-bit (72 Mbit); supports 18-bit parallel data path for high-bandwidth interconnect buffers.
Max Clock Frequency250 MHz; delivers 500 MT/s effective throughput per port with DDR interface.
Read Latency1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); selectable for latency-sensitive vs. throughput-optimized systems.
Supply VoltagesVDD = 1.8V ±0.1V (core); VDDQ = 1.4–1.8V (I/O); allows interoperability with 1.5V or 1.8V memory subsystems.
Burst LengthFixed 2-word burst; eliminates variable-latency arbitration and simplifies controller FIFO design.
Package165-ball FBGA (13 × 15 × 1.4 mm); industry-standard footprint for high-pin-count, thermally demanding SRAM applications.
JTAG SupportIEEE 1149.1 compliant; enables boundary-scan testing and system-level debug without intrusive probing.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous write data input18-bit parallel data sampled on rising edge of K clock; supports full-word or byte-masked writes via BWS signals.
A[20:0]Multiplexed address input21-bit address latched on alternating K-clock edges for read/write; enables 4M-depth addressing with shared bus.
K / KWrite/read clock inputsDual differential clock pair; K drives write operations, K drives read operations-eliminates clock skew between ports.
C / CRead data output clocksOutput-synchronous clocks aligned to Q[17:0] edges; minimizes flight-time mismatch for reliable DDR capture.
CQ / CQEcho clocksOutput-coupled copies of C/C; simplify source-synchronous data capture in FPGA/ASIC receivers.
RPS / WPSPort select controlsActive-low enables for read/write ports; enables depth expansion by stacking multiple devices with independent port activation.
BWS[1:0]Byte write selectsTwo active-low signals controlling D[8:0] and D[17:9]; allow partial 18-bit word updates without read-modify-write overhead.
DOFFLatency mode controlHigh = 1.5-cycle read latency (higher bandwidth); Low = 1-cycle latency (lower latency); sets internal pipeline depth.
VREFReference voltage inputProvides mid-supply reference for HSTL input threshold; must be externally decoupled and stabilized.
ZQImpedance calibrationConnects to external 240Ω resistor to ground; calibrates output driver impedance for signal integrity across process/voltage/temperature.

Key Features

FeatureDesign Value
Independent DDR read/write portsEnables true concurrent access-no bus turnaround required-critical for full-duplex packet processing pipelines.
Programmable 1.5/1-cycle read latencyDOFF pin selects optimal trade-off between throughput (1.5-cycle) and latency (1-cycle) without changing controller logic.
HSTL Class I/II compatible I/OSupports 1.4–1.8V VDDQ with adjustable drive strength and ZQ calibration-ensures signal integrity at 700 Mbps DDR rates.
Four-byte write masking (BWS[1:0])Allows granular 9-bit sub-word writes within 18-bit data path-reduces power and avoids unnecessary memory refresh cycles.
Integrated PLL with echo clocks (CQ/CQ)Eliminates external clock forwarding ICs; simplifies PCB layout and timing closure for high-speed FPGA interfaces.

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet switches with strict latency budgets.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-turnaround buffer between ingress parser and egress scheduler logic.

Use Value: Concurrent 250 MHz DDR reads/writes deliver 9 Gbps aggregate bandwidth-meeting 10GbE line-rate buffering requirements.

Use Scenario: Frame assembly/disassembly in OC-192 SONET/SDH line cards requiring deterministic access timing.

IC Role / Device Role / Timing Role: High-reliability, low-jitter memory for ATM cell reassembly engines with synchronized read/write scheduling.

Use Value: 1.5-cycle latency mode ensures consistent 4 ns read response time across temperature, enabling jitter-free cell timing.

Baseband Processing BufferFPGA Co-Processor Cache

Use Scenario: Inter-FPGA data exchange in wireless baseband units handling LTE-Advanced carrier aggregation.

IC Role / Device Role / Timing Role: Shared memory between two FPGAs performing parallel FFT and channel estimation tasks.

Use Value: RPS/WPS signals enable seamless depth expansion across four CY7C1512KV18 devices-scaling to 16M × 18-bit without controller redesign.

Use Scenario: Off-chip instruction/data cache for soft-core processors embedded in Xilinx Ultrascale+ FPGAs.

IC Role / Device Role / Timing Role: Low-latency, burst-2 memory mapped directly into processor AXI address space via custom bridge logic.

Use Value: DOFF-controlled 1-cycle latency reduces average instruction fetch delay by 2.5 ns versus standard QDR II mode-improving core IPC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-bit × 2M configuration; 10 ns access time (asynchronous); no DDR interface or DOFF latency control.Used in legacy telecom systems where synchronous timing is not required; lacks echo clocks and JTAG.Select only if migrating from legacy async SRAM designs and bandwidth < 4 Gbps suffices.
ISSI IS61WV102418BLL-10BLI1M × 18-bit; 10 ns async access; 3.3V/2.5V supply; no QDR architecture or burst-2 capability.Suitable for cost-sensitive industrial controllers with moderate throughput needs; no concurrent read/write support.Choose when budget constraints outweigh bandwidth requirements and system clocking is non-critical.

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1512KV18 uniquely delivers 72-Mbit density with true concurrent DDR ports, programmable latency, and echo-clock–assisted timing closure-making it irreplaceable in modern packet-processing architectures demanding >5 Gbps sustained throughput.

Availability

CY7C1512KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and FPGA co-processor cache applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1512KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with headquarters in San Jose, CA.

CY7C1512KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, high-bandwidth data buffering in full-duplex communication infrastructure where bus turnaround overhead must be eliminated.

FAQ

What is the function of the DOFF pin on CY7C1512KV18?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures the device for 1.5-cycle read latency (optimized for maximum bandwidth); when LOW, it enables 1-cycle latency (minimizing access delay). This setting directly affects internal pipeline staging and must be held stable during operation.

How does the CY7C1512KV18 support depth expansion?

Depth expansion is achieved using RPS (Read Port Select) and WPS (Write Port Select) pins-both active-low. By tying RPS/WPS of multiple devices to unique decode signals, each device responds only to its assigned address range while sharing the same address/data buses, effectively increasing total memory depth without controller modification.

Can CY7C1512KV18 operate with only one clock domain (K-only)?

Yes-CY7C1512KV18 supports single-clock-domain operation where both K and K inputs are tied together, and C/C are driven by the same source. In this mode, read and write operations share timing references, reducing clock routing complexity but sacrificing some concurrency benefits of true dual-clock operation.

What is the purpose of the ZQ pin and how must it be connected?

The ZQ pin connects to an external 240Ω resistor to ground for output driver impedance calibration. This compensates for process, voltage, and temperature variations to maintain consistent HSTL output drive strength. Failure to connect ZQ properly results in signal integrity degradation and timing violations at 700 Mbps DDR rates.

CY7C1512KV18-250BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1512KV18-250BZXI FAQ

1.How can I place an order for CY7C1512KV18-250BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1512KV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1512KV18-250BZXI reliable?

The price and inventory of CY7C1512KV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512KV18-250BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1512KV18-250BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512KV18-250BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1512KV18-250BZXI?

CY7C1512KV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1512KV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1512KV18-250BZXI?

For technical support, including CY7C1512KV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512KV18-250BZXI requirements.

6.How does Aetrix verify that CY7C1512KV18-250BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1512KV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512KV18-250BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1512KV18-250BZXI?

All CY7C1512KV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512KV18-250BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1512KV18-250BZXI part is unused and in its original packaging.

Return procedure for CY7C1512KV18-250BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1512KV18-250BZXI Tags

  • CY7C1512KV18-250BZXI
  • CY7C1512KV18-250BZXI PDF
  • CY7C1512KV18-250BZXI Datasheet
  • CY7C1512KV18-250BZXI Specifications
  • CY7C1512KV18-250BZXI Images
  • Infineon Technologies
  • Infineon Technologies CY7C1512KV18-250BZXI
  • Buy CY7C1512KV18-250BZXI
  • CY7C1512KV18-250BZXI Price
  • CY7C1512KV18-250BZXI Distributor
  • CY7C1512KV18-250BZXI Supplier
  • CY7C1512KV18-250BZXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER