Infineon Technologies CY7C1512KV18-250BZXIT

Overview

CY7C1512KV18-250BZXIT from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR® II SRAM with dual independent read/write ports, 250 MHz operation (40 ns clock period), DDR interfaces on both ports (500 Mbps per pin), and 1.5-cycle read latency when DOFF is HIGH. It delivers high-bandwidth buffering for network packet processing in telecom line cards.

For engineers reviewing the CY7C1512KV18-250BZXIT datasheet, CY7C1512KV18-250BZXIT pinout, CY7C1512KV18-250BZXIT application, or CY7C1512KV18-250BZXIT equivalent, key selection criteria include burst depth (2-word), I/O voltage compatibility (VDDQ = 1.4–1.8 V), echo clock support (CQ/CQ), PLL-based timing alignment, and FBGA-165 package thermal/mechanical constraints.

Technical Context

This QDR II SRAM implements fully synchronous, pipelined access with separate K/K clocks for write/read address latching and C/C clocks for output data registration. Its architecture eliminates bus turnaround by dedicating D[x:0] inputs to writes and Q[x:0] outputs to reads.

The device uses on-chip PLL for precise data-eye placement and supports two operational modes: 1.5-cycle read latency (DOFF = HIGH) for maximum throughput, or 1-cycle latency (DOFF = LOW) for QDR I compatibility. Byte write select (BWS[1:0]) enables partial-word updates without read-modify-write cycles.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant (Pb-free).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with AS7C3256A-25JCIN and IS61WV102418BLL-25BLI, CY7C1512KV18-250BZXIT uniquely delivers true concurrent dual-port operation, DDR signaling, and echo-clock–assisted capture-enabling deterministic 9 Gbps throughput unattainable with asynchronous or ZBT alternatives.

Availability

CY7C1512KV18-250BZXIT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and FPGA co-processor memory requiring stable component supply and long-term industrial availability.

Supply support for CY7C1512KV18-250BZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems.

This device belongs to the QDR® II SRAM product line, engineered specifically for ultra-low-latency, high-bandwidth buffering in packet-switched infrastructure where deterministic timing and concurrent access are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1512KV18-250BZXIT?

The DOFF (Data Out Fast) pin selects read latency mode: when asserted HIGH, it configures the device for 1.5-cycle read latency (optimal for QDR II throughput); when LOW, it reverts to 1-cycle latency for backward compatibility with QDR I systems. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.

Does CY7C1512KV18-250BZXIT support partial writes without read-modify-write cycles?

Yes. The device supports true partial writes using BWS[1:0] (Byte Write Select) inputs. Each BWS signal controls a 9-bit segment of the 18-bit D[17:0] bus, allowing independent update of either half-word without affecting the other. No internal read-modify-write sequence is required-writes are atomic and synchronous to the K clock.

How do the CQ and CQ echo clocks improve system timing margin?

CQ and CQ are phase-aligned, low-skew copies of the C and C output clocks, routed alongside Q[17:0]. They provide a local, source-synchronous capture reference at the receiver, eliminating flight-time mismatch between clock and data. This reduces timing uncertainty by up to 150 ps compared to using system-generated clocks, enabling reliable 500 Mbps DDR operation on FR4 PCBs.

Can CY7C1512KV18-250BZXIT operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes. The datasheet explicitly specifies VDDQ = 1.4 V to VDD, and VDD is fixed at 1.8 V ±0.1 V. Therefore, VDDQ = 1.5 V is within specification and commonly used to interface with 1.5 V FPGA I/O banks. All AC parameters-including setup/hold times and output swing-are guaranteed across this VDDQ range when VDD is 1.8 V.