Infineon Technologies CY7C1512KV18-300BZC

Overview

CY7C1512KV18-300BZC from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 300 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (600 Mbps per port), 1.8V core supply, and 1.4–1.8V I/O supply. It delivers concurrent read/write transactions with 1.5-cycle read latency (DOFF = HIGH) in high-bandwidth networking and packet buffering applications.

For engineers reviewing the CY7C1512KV18-300BZC datasheet, CY7C1512KV18-300BZC pinout, CY7C1512KV18-300BZC application, or CY7C1512KV18-300BZC equivalent, key selection criteria include burst depth (2-word), echo clock support (CQ/CQ), PLL-based timing alignment, HSTL-compatible outputs, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility.

Technical Context

This QDR II SRAM implements fully independent synchronous read and write ports sharing a multiplexed address bus, with addresses latched on alternate rising edges of K/K clocks. Internal self-timed writes and programmable DOFF enable configurable read latency (1-cycle or 1.5-cycle).

The device integrates a Phase-Locked Loop (PLL) for precise data placement, echo clocks (CQ/CQ) to simplify high-speed capture, and variable-drive HSTL output buffers. It supports depth expansion via RPS/WPS and byte-level write masking using BWS[1:0] signals for 18-bit data width.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1512KV18-300BZC uniquely delivers 300 MHz DDR bandwidth, echo-clock–assisted capture, and programmable latency-enabling next-generation packet processors where timing closure and throughput density are critical.

Availability

CY7C1512KV18-300BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and FPGA co-processor caches requiring stable component supply across extended product lifecycles.

Supply support for CY7C1512KV18-300BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and mixed-signal ICs for communications, industrial, and automotive systems, with emphasis on signal integrity and timing precision.

CY7C1512KV18 belongs to the QDR® II SRAM product line, engineered specifically for high-throughput, low-latency data buffering in packet-switched infrastructure where deterministic DDR timing and concurrent access are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1512KV18-300BZC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for optimized throughput in burst-heavy workloads; when LOW, it selects 1-cycle latency for minimal access delay. This setting is sampled synchronously on the K clock and affects internal pipeline staging-not output drive strength or timing margins.

How does the CQ/CQ echo clock improve system timing margin?

CQ and CQ are delayed copies of the C and C output clocks, generated internally to match the flight time of Q[17:0] data signals. When captured by an FPGA's IDELAY/ODELAY or dedicated source-synchronous input registers, they eliminate board-level skew between clock and data, enabling reliable sampling at 300 MHz without manual PCB length matching.

Can CY7C1512KV18-300BZC operate with 1.5V VDDQ while using 1.8V VDD?

Yes. The device specifies VDDQ = 1.4 V to VDD, and VDD is fixed at 1.8 V ±0.1 V. Therefore, 1.5V VDDQ is fully supported and commonly used to interface with 1.5V logic families. All HSTL Class I I/O characteristics-including drive strength, termination, and AC timing-are guaranteed across this range.

What is the purpose of BWS[1:0] in a 18-bit configuration?

BWS[1:0] provides two independent active-low byte write enables for the 18-bit D[17:0] bus: BWS0 controls D[8:0] (9 LSBs) and BWS1 controls D[17:9] (9 MSBs). This allows selective updating of either 9-bit half-word without disturbing the other, essential for atomic header modifications in packet buffer applications.