Infineon Technologies CY7C1512KV18-300BZIT

Overview

CY7C1512KV18-300BZIT from Cypress Semiconductor is a 4M × 18-bit (72-Mbit) QDR® II synchronous SRAM with dual independent read/write ports, 300 MHz clock operation, DDR interfaces on both ports (600 Mbps per port), and 1.8V core / 1.4–1.8V I/O supply. It delivers 1.5-cycle read latency when DOFF = HIGH and supports concurrent transactions in high-bandwidth networking buffers.

For engineers reviewing the CY7C1512KV18-300BZIT datasheet, CY7C1512KV18-300BZIT pinout, CY7C1512KV18-300BZIT application, or CY7C1512KV18-300BZIT equivalent, key selection criteria include burst depth (2-word), echo clock support (CQ/CQ), PLL-based timing accuracy, and x18 data width for packet buffering in telecom line cards.

Technical Context

The CY7C1512KV18-300BZIT implements QDR II architecture with physically separate read and write data paths, eliminating bus turnaround overhead. It uses two independent input clocks (K/K) for address/data capture and two output clocks (C/C) plus echo clocks (CQ/CQ) to manage flight time skew in >300 MHz systems.

Internally, it features synchronous self-timed writes, programmable impedance (ZQ), JTAG 1149.1 boundary scan, and a phase-locked loop (PLL) for precise data placement. Read latency is configurable between 1-cycle (DOFF = LOW) and 1.5-cycle (DOFF = HIGH), enabling trade-offs between timing margin and throughput in FPGA-attached memory subsystems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10PA and IS61WV102418BLL-10TLI, the CY7C1512KV18-300BZIT uniquely delivers concurrent DDR read/write at 300 MHz with echo-clock–assisted timing closure - essential for modern FPGA-based packet processing where bandwidth and determinism are co-constrained.

Availability

CY7C1512KV18-300BZIT is available at Aetrix Electronics and suitable for 10G Ethernet line cards, ATM switch fabrics, LTE/5G baseband interposers, and broadcast video encoders requiring stable component supply across multi-year production cycles.

Supply support for CY7C1512KV18-300BZIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

The QDR® II SRAM product line targets high-speed packet buffering and switching systems requiring deterministic latency, concurrent access, and DDR bandwidth - optimized for FPGA- and ASIC-based infrastructure equipment.

FAQ

What is the function of the DOFF pin on CY7C1512KV18-300BZIT?

The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-skew layouts; when LOW, it selects 1-cycle latency for minimal access delay. This setting directly determines the number of clock cycles between address assertion and valid Q[17:0] output, and must be set before initialization.

How does the CY7C1512KV18-300BZIT handle partial-word writes?

It uses two active-LOW Byte Write Select signals (BWS[1:0]) to enable selective updating of D[8:0] (BWS0) and D[17:9] (BWS1). When a BWS signal is deasserted, the corresponding 9-bit byte remains unaltered - eliminating need for read-modify-write cycles and preserving data coherency during burst-oriented packet edits.

Can CY7C1512KV18-300BZIT operate with only one clock domain?

Yes - it supports single-clock mode where K and C are tied together (and K and C likewise), simplifying board layout at the cost of reduced timing flexibility. In this mode, the device behaves like a standard QDR I part with 1-cycle latency, but loses the skew-reduction benefit of independent output clocks and echo clock synchronization.

What is the role of the ZQ pin in CY7C1512KV18-300BZIT?

ZQ connects to an external 240 Ω ±1% reference resistor to ground, enabling on-chip impedance calibration of HSTL output drivers. This adjusts drive strength dynamically to match PCB trace impedance, minimizing signal reflections and ensuring clean eye diagrams at 600 Mbps DDR rates - critical for reliable operation in dense backplane environments.