Infineon Technologies CY7C1512KV18-300BZXC

Overview

CY7C1512KV18-300BZXC from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 300 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (600 Mbps per port), 1.8V core supply, and 1.4–1.8V I/O supply. It delivers concurrent read/write transactions with 1-cycle (DOFF = LOW) or 1.5-cycle (DOFF = HIGH) read latency in high-bandwidth networking line cards.

For engineers reviewing the CY7C1512KV18-300BZXC datasheet, CY7C1512KV18-300BZXC pinout, CY7C1512KV18-300BZXC application, or CY7C1512KV18-300BZXC equivalent, key selection criteria include burst depth (2-word), echo clock support (CQ/CQ), PLL-based data placement, JTAG 1149.1 testability, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM uses dual independent clock domains: K/K for address/data input timing and C/C for output timing, enabling precise DDR edge alignment without bus turnaround. Its internal synchronous self-timed write circuitry eliminates external write pulse control, while the DOFF pin selects between 1-cycle and 1.5-cycle read latency modes.

The device implements full data coherency across ports and supports depth expansion via RPS/WPS signals. Byte write select (BWS[1:0]) enables partial writes to 9-bit subwords within the 18-bit data path, and the integrated PLL ensures accurate data-eye positioning at 300 MHz operation.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1512KV18-250BZXC, the -300BZXC delivers 20% higher bandwidth at identical voltage and pinout; versus AS7C32560A-300BIN, it provides true concurrent access and source-synchronous timing-critical for packet-forwarding and real-time signal processing.

Availability

CY7C1512KV18-300BZXC is available at Aetrix Electronics and suitable for high-speed networking infrastructure, semiconductor test equipment, and wireless baseband subsystems requiring stable component supply across extended production lifecycles.

Supply support for CY7C1512KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.

The QDR® II SRAM product line targets high-throughput, low-latency memory interfacing in networking, test, and signal processing systems where concurrent access and precise timing control are essential.

FAQ

What is the function of the DOFF pin on CY7C1512KV18-300BZXC?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for improved timing margin in high-PVT-variation environments; when LOW, it enables 1-cycle latency for minimal pipeline delay. This setting directly affects internal register staging and must be held stable during initialization.

Can CY7C1512KV18-300BZXC operate with only one clock domain (K = C)?

Yes, the device supports single-clock-domain operation where K and C are tied together, but this forfeits skew-reduction benefits. In that mode, CQ still echoes C, and all timing parameters shift to reflect combined clock path delays; AC specifications require recalculation per Table 11 in the datasheet.

How does ZQ calibration affect output drive strength?

ZQ calibration adjusts HSTL output driver impedance to match a 240 Ω external reference resistor, ensuring consistent signal rise/fall times and reduced reflections. The calibration occurs automatically at power-up and can be retriggered via JTAG instruction; improper ZQ connection causes excessive overshoot or slow edges.

Is BWS[1:0] functional in single-word (non-burst) access mode?

No-BWS[1:0] operates only during valid write cycles and applies exclusively to the 18-bit data path regardless of burst configuration. Each BWS bit enables one 9-bit subword (BWS0 → D[8:0], BWS1 → D[17:9]); both must be asserted for full-word writes. It has no effect on read operations or address decoding.