Infineon Technologies CY7C1512KV18-300BZXI

Overview

CY7C1512KV18-300BZXI from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 300 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (600 Mbps per pin), 1.8V core supply, and 1.4–1.8V I/O supply. It delivers concurrent read/write transactions with 1.5-cycle read latency (DOFF = HIGH) and is used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1512KV18-300BZXI datasheet, CY7C1512KV18-300BZXI pinout, CY7C1512KV18-300BZXI application, or CY7C1512KV18-300BZXI equivalent, key selection criteria include burst depth (2-word), echo clock support (CQ/CQ), PLL-based timing alignment, HSTL-compatible output drive, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements fully synchronous, pipelined architecture with independent K/K clocks for address/data capture and C/C clocks for output timing-enabling precise DDR edge placement without bus turnaround. Its internal PLL locks to input clocks to minimize jitter and ensure stable data-eye positioning at 300 MHz operation.

The device supports byte-write select (BWS[1:0]) for partial-word writes into its 18-bit-wide data path and uses DOFF to toggle between 1-cycle (QDR I mode) and 1.5-cycle (QDR II mode) read latency. All control signals-including RPS, WPS, and BWS-are registered on rising edges of K/K, ensuring deterministic setup/hold timing.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free (BZXI suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with AS7C361024B-300BIN and IS61WV102418BLL-300TQLI, CY7C1512KV18-300BZXI uniquely delivers true concurrent access, echo-clock–assisted capture, and 72-Mbit density in an industrial-grade FBGA-making it the only viable option for 10G+ packet processing where latency predictability and bandwidth are non-negotiable.

Availability

CY7C1512KV18-300BZXI is available at Aetrix Electronics and suitable for network infrastructure, telecom line card development, and high-speed test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1512KV18-300BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1512KV18 belongs to the QDR® II SRAM product line, designed specifically for deterministic, high-bandwidth buffering in networking and telecommunications infrastructure where concurrent read/write, low latency, and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C1512KV18-300BZXI?

The DOFF (Data-Off) pin selects read latency mode: when asserted HIGH, it configures the device for QDR II operation with 1.5-cycle read latency and optimized burst timing; when LOW, it enables QDR I compatibility mode with 1-cycle latency. This pin is sampled synchronously on the rising edge of the K clock and must be stable before initialization completes.

Can CY7C1512KV18-300BZXI operate with only a single clock signal?

No-it requires two distinct clock pairs: K/K for address and write data capture, and C/C for read data output registration. Using only one clock violates timing specifications and disables echo clock generation (CQ/CQ). The device does not support single-clock-domain operation; attempting it results in undefined data output and potential metastability.

How does the BWS[1:0] signal control partial writes in CY7C1512KV18-300BZXI?

BWS[1:0] are active-low byte write selects: BWS0 enables writing to D[8:0], and BWS1 enables D[17:9]. Both must be asserted to write the full 18-bit word. When either is deasserted, the corresponding 9-bit segment retains its prior value-enabling atomic partial updates without read-modify-write sequences or external logic.

Is CY7C1512KV18-300BZXI compatible with 1.5V-only I/O systems?

Yes-its VDDQ supply accepts 1.4 V to 1.8 V, and HSTL Class I outputs are fully compliant with 1.5V VTT termination. When VDDQ = 1.5V, output swing is 0.75V with 25 Ω driver impedance, meeting JEDEC HSTL-I electrical specs. No level-shifting circuitry is needed for 1.5V FPGA or ASIC interfaces.