Infineon Technologies CY7C1512KV18-333BZI

Overview

CY7C1512KV18-333BZI from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 333 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (700 Mbps effective data rate), 1.8V core supply, and 1.4–1.8V I/O supply. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1512KV18-333BZI datasheet, CY7C1512KV18-333BZI pinout, CY7C1512KV18-333BZI application, or CY7C1512KV18-333BZI equivalent, key selection criteria include 333 MHz clock frequency, 1.8V VDD / 1.4V–1.8V VDDQ compatibility, 165-ball FBGA package, QDR II burst architecture, and DOFF-controlled read latency mode.

Technical Context

This QDR II SRAM uses dual independent clock domains: K/K for address/data capture and C/C for output timing, enabling precise DDR alignment without bus turnaround. Its synchronous self-timed write circuitry eliminates external write pulse control, while echo clocks (CQ/CQ) support source-synchronous data capture at 700 Mbps.

The device implements 2-word burst transfers on every access, with full data coherency ensuring most-current data availability. Read latency is configurable via DOFF: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), matching QDR I timing when needed.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, with exposed thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with AS7C361024B-333BIN and IS61QW25636A-333TQLI, CY7C1512KV18-333BZI offers native 1.8V operation and PLL-based clock synthesis-making it optimal for power-constrained, jitter-sensitive telecom and networking SoC interfaces where voltage compatibility and deterministic timing are non-negotiable.

Availability

CY7C1512KV18-333BZI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and high-speed test equipment buffer applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY7C1512KV18-333BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for communications, industrial, and automotive markets.

CY7C1512KV18 belongs to the QDR II SRAM product line, designed specifically for ultra-low-latency, high-throughput memory subsystems in packet-switched networks and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1512KV18-333BZI?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle QDR II latency for maximum bandwidth efficiency; when LOW, it reverts to 1-cycle QDR I timing for backward compatibility. This setting is sampled synchronously on the K clock edge and affects all subsequent read operations until changed.

Can CY7C1512KV18-333BZI operate with only one clock domain (K-only mode)?

No. The device requires both K and K input clocks for proper address latching-read addresses are captured on K rising edges, write addresses on K rising edges. Using only K violates timing specifications and causes undefined behavior. Single-clock operation is not supported per the QDR II architecture.

How does the BWS[1:0] signal control write operations in the 4M × 18 configuration?

In CY7C1512KV18, BWS[1:0] are two active-low byte write select signals: BWS0 enables writing to D[8:0] (lower 9 bits), and BWS1 enables writing to D[17:9] (upper 9 bits). When either is deasserted, the corresponding 9-bit lane retains its prior value-enabling partial writes without read-modify-write cycles.

Is the 165-ball FBGA package of CY7C1512KV18-333BZI compatible with standard reflow profiles?

Yes-the 165-ball FBGA (13 × 15 × 1.4 mm) uses Pb-free solder balls and complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3. Standard lead-free reflow profiles (peak 260°C, 60–90 sec above 217°C) are qualified; pre-bake is required if exposed to ambient >30°C/60% RH for >168 hours.