Infineon Technologies CY7C1512V18-200BZXC
- Part No.:
- CY7C1512V18-200BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1512V18-200BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1512V18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR-II SRAM with separate read/write ports, 250 MHz clock support, DDR interfaces on both ports (500 MHz data rate), and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.
For engineers reviewing the CY7C1512V18 datasheet, CY7C1512V18 pinout, CY7C1512V18 application, or CY7C1512V18 equivalent, key selection criteria include its dual-clock DDR timing architecture, HSTL I/O compatibility, DLL-based data alignment, 18-bit burst width, and synchronous self-timed write capability.
Technical Context
The CY7C1512V18 implements QDR-II architecture with fully independent read and write ports sharing a multiplexed 21-bit address bus. Address latching occurs on alternate rising edges of K/K clocks, enabling pipelined 2-word bursts per access cycle.
It uses two input clock pairs-K/K for address/control/data capture and C/C for output data synchronization-with echo clocks CQ/CQ to compensate for board flight-time skew. The integrated Delay Lock Loop (DLL) aligns output data to C/C edges with sub-cycle precision.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4M × 18-bit = 72 Mbit; supports 2M-word depth with 18-bit parallel interface. |
| Max Clock Frequency | 250 MHz; enables 500 MT/s effective data rate via DDR on both read and write ports. |
| VDD / VDDQ | Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V; enables low-power HSTL-18 compatible signaling. |
| Burst Length | Fixed 2-word burst per access; delivers 36 bits per clock cycle on read/write ports. |
| Timing Architecture | Synchronous pipelined with DLL; eliminates setup/hold violations at 500 MT/s by dynamically adjusting internal delays. |
| Write Latency | Self-timed internal write cycle; no external wait-state insertion required for full-speed operation. |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm); RoHS-compliant, 0.8 mm ball pitch, thermal pad optional. |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, JEDEC MO-270AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | 18-bit parallel data sampled on rising edge of K/K; supports byte-level write masking via BWS[1:0]. |
| Q[17:0] | Synchronous read data outputs | 18-bit parallel data driven on rising edges of C/C; tri-stated when RPS is deasserted. |
| A[20:0] | Multiplexed address inputs | 21-bit address bus shared by read/write ports; latched on alternating K/K edges for pipelined access. |
| RPS / WPS | Read/Write port select | Active-low synchronous enables; control port arbitration without bus turnaround or contention. |
| BWS[1:0] | Byte write select | Two active-low signals controlling D[8:0] and D[17:9]; enable partial-word writes without read-modify-write overhead. |
| C / C, CQ / CQ | Output clock & echo clock pair | C/C drive Q[17:0]; CQ/CQ replicate C/C timing at device output to simplify controller capture timing. |
| K / K | Input clock pair | Rising edges sample all synchronous inputs (address, data, controls); K used for read address, K for write address. |
| ZQ | Impedance calibration input | Connects to external 240 Ω resistor to ground to calibrate HSTL output driver impedance to 48 Ω ±15%. |
| DOFF | DLL disable control | Pulling low disables internal DLL; shifts output timing to fixed delay mode-requires retiming validation. |
| TCK/TMS/TDI/TDO | JTAG boundary-scan interface | IEEE 1149.1 compliant; supports production test, interconnect verification, and in-system debug. |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround cycles and data contention-enables true concurrent read/write at full bandwidth. |
| DDR interfaces on both ports | Delivers 500 MT/s effective throughput using 250 MHz clocks-doubles bandwidth versus single-data-rate SRAMs. |
| Integrated Delay Lock Loop (DLL) | Aligns Q[17:0] output edges to C/C clock within ±50 ps-removes board-level timing margining for >200 MHz systems. |
| HSTL-18 compatible I/O | Supports 1.4–1.8 V VDDQ with programmable drive strength-ensures signal integrity on high-speed backplanes and switch fabrics. |
| Synchronous self-timed writes | Internal write completion detection eliminates need for external write acknowledge or wait states. |
Applications
| High-Speed Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with zero-latency read-after-write requirements. IC Role / Device Role / Timing Role: Dual-port SRAM serving as ingress/egress FIFO buffer with simultaneous packet header lookup (read) and payload write. Use Value: 250 MHz clock + DDR yields 9 Gbps aggregate bandwidth-meets 10G/40G line rate buffering needs without external arbitration logic. | Use Scenario: Supporting multiple TDM channels and OAM&P processing in carrier-grade SDH/SONET add-drop multiplexers. IC Role / Device Role / Timing Role: Shared memory resource for time-slot interchange (TSI) and statistics collection engines operating on independent clock domains. Use Value: Independent RPS/WPS enables deterministic latency for real-time traffic shaping-no bus contention between control-plane and user-plane threads. |
| Baseband Processing in Wireless Infrastructure | High-Performance Test Equipment Memory |
Use Scenario: Temporary storage of IQ samples during digital predistortion (DPD) and MIMO channel estimation in 4G/5G remote radio units. IC Role / Device Role / Timing Role: Burst-access memory interfacing directly with FPGA-based DSP blocks requiring synchronized 18-bit parallel data streams. Use Value: 2-word burst + DLL-aligned CQ/CQ simplifies FPGA capture logic-reduces FPGA pin count and timing closure effort by 30% vs. SDR alternatives. | Use Scenario: Deep pattern storage and real-time comparison in automated test equipment (ATE) for ASIC validation at 500 MT/s. IC Role / Device Role / Timing Role: High-fidelity stimulus/response memory with precise read/write phase alignment for jitter-sensitive test vectors. Use Value: Echo clocks CQ/CQ referenced to C/C enable sub-200 ps setup/hold window at controller-supports <1 ns timing resolution in production test. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-bit width, 2.5V core, 166 MHz max clock; no DLL; uses SSTL-2 I/O | Limited to lower-speed telecom control planes; lacks echo clocks for skew compensation | Select only if system operates ≤333 MT/s and uses 2.5V infrastructure. |
| ISSI IS61WV102418B | Single-port, 1024K × 18, 165 MHz max, 3.3V/2.5V I/O; asynchronous write | Suitable for non-concurrent buffer applications; requires external arbitration for read-after-write | Choose only for cost-sensitive, non-real-time buffering where bandwidth < 3 Gbps suffices. |
Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1512V18 uniquely delivers 500 MT/s DDR concurrency, DLL-based timing closure, and HSTL-18 compatibility-making it the only option for 10G+ packet-processing pipelines requiring deterministic sub-cycle latency.
Availability
CY7C1512V18 is available at Aetrix Electronics and suitable for high-speed network packet buffering, telecom line card memory, baseband processing in wireless infrastructure, and high-performance test equipment requiring stable component supply across extended product lifecycles.
Supply support for CY7C1512V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.
CY7C1512V18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent memory access in multi-gigabit packet-forwarding and signal-processing systems.
FAQ
What is the minimum supported clock frequency for CY7C1512V18?
The device operates down to DC for functional operation, but AC timing specifications-including DLL lock range and output valid windows-are guaranteed only from 100 MHz to 250 MHz. Below 100 MHz, DLL may lose lock, requiring DOFF assertion and manual timing margin validation per application note AN91504.
Can CY7C1512V18 operate in single-clock mode?
Yes. When C and C are tied to K and K respectively, the device enters single-clock mode. In this configuration, Q[17:0] is clocked by K/K instead of C/C, and CQ/CQ become replicas of K/K. All timing parameters shift-refer to Table 12 in datasheet Rev. *F for revised setup/hold values.
How does ZQ pin calibration affect signal integrity?
ZQ connects to an external 240 Ω resistor to set output driver impedance to 48 Ω ±15%, matching standard PCB trace impedances. Incorrect ZQ termination causes reflection-induced eye closure-measured eye height drops >15% at 500 MT/s if ZQ is left floating or shorted to VDDQ without resistor.
Is JTAG boundary-scan supported during normal operation?
Yes. TCK/TMS/TDI/TDO operate independently of memory function. Boundary-scan testing can be performed while RPS/WPS remain inactive, enabling in-system verification without halting data path operation-validated per IEEE 1149.1 test patterns in datasheet Section 5.3.
CY7C1512V18-200BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1512V18-200BZXC FAQ
1.How can I place an order for CY7C1512V18-200BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1512V18-200BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1512V18-200BZXC reliable?
The price and inventory of CY7C1512V18-200BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512V18-200BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1512V18-200BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512V18-200BZXC transactions.
Note: Certain payment methods may incur a processing fee.
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CY7C1512V18-200BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1512V18-200BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1512V18-200BZXC?
For technical support, including CY7C1512V18-200BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512V18-200BZXC requirements.
6.How does Aetrix verify that CY7C1512V18-200BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1512V18-200BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512V18-200BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1512V18-200BZXC?
All CY7C1512V18-200BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512V18-200BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1512V18-200BZXC part is unused and in its original packaging.
Return procedure for CY7C1512V18-200BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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