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Infineon Technologies CY7C1512V18-250BZIT

Part No.:
CY7C1512V18-250BZIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1512V18-250BZIT.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,625

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Product details

Overview

CY7C1512V18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 250 MHz QDR-II SRAM with separate read/write ports, DDR interfaces on both ports (500 MT/s effective data rate), and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It operates at core VDD = 1.8 V ±0.1 V and I/O VDDQ = 1.4–1.8 V, supporting concurrent burst reads/writes in high-bandwidth networking and packet buffering applications.

For engineers reviewing the CY7C1512V18 datasheet, CY7C1512V18 pinout, CY7C1512V18 application, or CY7C1512V18 equivalent, key selection criteria include its dual-clock DDR timing (K/K and C/C), echo clocks (CQ/CQ) for simplified high-speed capture, 18-bit data width, synchronous self-timed writes, and HSTL-compatible I/O with ZQ impedance calibration.

Technical Context

The CY7C1512V18 implements QDR-II architecture with fully independent read and write ports sharing a multiplexed 21-bit address bus (A[20:0]). Each access delivers two 18-bit words per clock cycle-latched on alternate rising edges of K/K for address and data-and supports depth expansion via RPS/WPS and BWS[1:0] controls.

It uses a Delay Lock Loop (DLL) to align CQ/CQ echo clocks with output data edges, enabling precise source-synchronous capture at 500 MT/s. All synchronous inputs are registered on K/K edges; all outputs are registered on C/C edges (or K/K in single-clock mode), with DOFF allowing DLL disable for timing margin tuning.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4M × 18-bit (72 Mbit); enables compact, high-throughput buffer storage without external width expansion
Max Clock Frequency 250 MHz; supports 500 MT/s DDR transfers on both read and write ports simultaneously
Data Bus Width 18-bit (D[17:0]/Q[17:0]); matches common packet header + payload alignment in telecom ASIC interfaces
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O); allows low-power operation while maintaining HSTL-18 compatibility
Package 165-ball FBGA (15 × 17 × 1.4 mm); industry-standard footprint for high-pin-count, high-speed memory placement
Timing Architecture Dual input clocks (K/K) for address/data capture; dual output clocks (C/C) + echo clocks (CQ/CQ); eliminates board-level skew compensation logic
Write Control Synchronous self-timed writes with BWS[1:0] byte write selects; preserves unselected bytes during partial-word updates

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input Latched on rising edge of K/K; 18-bit parallel path for burst write payloads
Q[17:0] Synchronous read data output Driven on rising edge of C/C; full 18-bit burst output aligned with echo clocks
K, K Positive/negative input clocks Capture all write/read addresses and control signals; define system timing reference
C, C Positive/negative output clocks Control Q[17:0] output register timing; used with CQ/CQ for deskewed capture
CQ, CQ Echo clocks referenced to C/C Free-running, phase-aligned copies of C/C; simplify FPGA/ASIC data capture at 500 MT/s
RPS, WPS Read/Write Port Select (active LOW) Enable independent port activation; allow interleaved or concurrent read/write operations
BWS[1:0] Byte Write Select (active LOW) Select 9-bit subwords for partial writes; avoids read-modify-write cycles in protocol processing
ZQ Output impedance calibration input Connects to external resistor to ground to tune Q[17:0]/CQ/CQ drive strength to match 50 Ω trace impedance
DOFF DLL disable control (active LOW) Disables internal DLL to reduce jitter sensitivity when board layout ensures tight clock-data alignment
TCK/TMS/TDI/TDO JTAG 1149.1 test interface Enables boundary scan testing and in-system programming of configuration registers

Key Features

Feature Design Value
Separate read/write data paths Eliminates bus turnaround delay and contention-enables true concurrent access in packet forwarding engines
2-word burst per access Delivers 36 bits per 250 MHz clock cycle (72 Gb/s aggregate bandwidth) without external burst logic
HSTL-18 compatible I/O Supports 1.4–1.8 V VDDQ; meets JEDEC HSTL Class I specs for signal integrity up to 500 MT/s
ZQ impedance calibration Automatically adjusts output driver strength to match PCB trace impedance-reduces signal reflections and timing uncertainty
Delay Lock Loop (DLL) Aligns CQ/CQ echo clocks to Q[17:0] data edges within ±50 ps-enables reliable source-synchronous capture in FPGAs
JTAG 1149.1 support Allows IEEE-compliant boundary scan testing and debug access without dedicated test pins or probe points

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer with simultaneous read/write capability for cut-through switching.

Use Value: 500 MT/s DDR throughput and zero-turnaround architecture reduce queuing latency by >30% versus SDR SRAM in 10G+ switch fabric designs.

Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line cards with real-time traffic shaping.

IC Role / Device Role / Timing Role: Dual-port memory interfacing directly to framer ASICs requiring deterministic 18-bit-wide burst access.

Use Value: BWS[1:0] byte-select and synchronous self-timed writes enable atomic header updates without corrupting active payload streams.

Baseband Processing Buffer High-Speed Test Equipment Memory

Use Scenario: Temporary storage of IQ samples between ADC/DAC stages in LTE/5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Low-jitter, source-synchronous memory with echo clocks (CQ/CQ) for precise FPGA-based sample alignment.

Use Value: DLL-aligned CQ/CQ outputs reduce setup/hold margin requirements by 120 ps-enabling stable operation at 250 MHz system clock.

Use Scenario: Pattern memory in automated test equipment (ATE) for high-speed digital IC validation.

IC Role / Device Role / Timing Role: Deterministic-access memory with JTAG support for in-system configuration and fault injection testing.

Use Value: TCK/TMS/TDI/TDO pins enable full boundary scan visibility-reducing test development time by eliminating custom test fixtures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-bit width, 165 MHz max frequency, LVDS I/O, different pinout and control protocol (no echo clocks) Targeted at lower-frequency, point-to-point interconnects where LVDS noise immunity outweighs bandwidth needs Choose when system clock < 200 MHz and LVDS signaling is required; not drop-in compatible due to timing and voltage differences
ISSI IS61WV102418B 1M × 18-bit, 165 MHz, asynchronous interface, no DDR or echo clocks, CMOS I/O Suitable for cost-sensitive, non-real-time buffering where deterministic latency is not critical Choose only for legacy upgrades or low-bandwidth control-plane buffers-lacks QDR-II concurrency and timing precision

Compared with IDT72T3615L10BG and ISSI IS61WV102418B, the CY7C1512V18 delivers 51% higher bandwidth and built-in source-synchronous timing aids (CQ/CQ, DLL), making it uniquely suited for 10G+ packet processing where deterministic sub-nanosecond timing is mandatory.

Availability

CY7C1512V18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and high-speed test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1512V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital mixed-signal solutions.

The CY7C1512V18 belongs to Cypress's QDR-II SRAM product line, engineered specifically for ultra-low-latency, high-bandwidth memory subsystems in networking, telecom, and test instrumentation where concurrent read/write and precise DDR timing are essential.

FAQ

What is the minimum VDDQ voltage supported by CY7C1512V18?

The device supports VDDQ from 1.4 V to 1.8 V, with guaranteed operation across this range per the datasheet's DC characteristics table. Operation below 1.4 V is not characterized and may result in I/O timing violations or drive strength degradation. System designs must maintain VDDQ ≥ 1.4 V under all load and temperature conditions.

Can CY7C1512V18 operate without the DLL enabled?

Yes-asserting DOFF (low) disables the internal DLL, reverting to basic clock-to-output timing. However, CQ/CQ become unaligned with Q[17:0], and setup/hold margins shrink significantly. This mode is only recommended for systems with exceptionally tight board-level clock-data routing and verified timing closure at 250 MHz.

How many address bits does CY7C1512V18 require?

The CY7C1512V18 requires 21 address bits (A[20:0]) to access its full 4M × 18-bit array. These are multiplexed for both read and write operations and latched on alternate rising edges of K/K, reducing pin count while preserving full addressing capability.

Is ZQ pin mandatory for proper operation?

Yes-ZQ must be connected either to an external resistor to ground (for calibrated output impedance) or directly to VDDQ (for minimum impedance mode). Leaving ZQ floating or connecting it to GND violates the absolute maximum ratings and may cause output driver instability or excessive current draw.

CY7C1512V18-250BZIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1512V18-250BZIT FAQ

1.How can I place an order for CY7C1512V18-250BZIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1512V18-250BZIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1512V18-250BZIT reliable?

The price and inventory of CY7C1512V18-250BZIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512V18-250BZIT is usually 5 days.

3.What payment methods are accepted for CY7C1512V18-250BZIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512V18-250BZIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1512V18-250BZIT?

CY7C1512V18-250BZIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1512V18-250BZIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1512V18-250BZIT?

For technical support, including CY7C1512V18-250BZIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512V18-250BZIT requirements.

6.How does Aetrix verify that CY7C1512V18-250BZIT is sourced from the original manufacturer or authorized distributors?

All CY7C1512V18-250BZIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512V18-250BZIT meets industry standards.

7.What is the process for return or replacement of CY7C1512V18-250BZIT?

All CY7C1512V18-250BZIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512V18-250BZIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1512V18-250BZIT part is unused and in its original packaging.

Return procedure for CY7C1512V18-250BZIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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