Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1512V18-250BZXC

Part No.:
CY7C1512V18-250BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1512V18-250BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,966

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1512V18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR-II SRAM with separate read/write ports, 250 MHz clock operation, DDR interfaces on both ports (500 MHz data rate), and 165-ball FBGA package. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1512V18 datasheet, CY7C1512V18 pinout, CY7C1512V18 application, or CY7C1512V18 equivalent, key selection criteria include burst depth (2-word), I/O voltage (VDDQ = 1.4–1.8 V), echo clock support (CQ/CQ), HSTL-compatible outputs, and JTAG 1149.1 test access.

Technical Context

The CY7C1512V18 implements QDR-II architecture with fully independent synchronous read and write ports sharing a multiplexed 21-bit address bus. Each port uses dedicated DDR clock pairs: K/K for input timing and C/C for output timing, enabling simultaneous 18-bit read and write transfers per cycle.

It integrates a Delay Lock Loop (DLL) for precise data placement, supports variable-drive HSTL I/O, and includes byte write selects (BWS[1:0]) for partial-word writes. Internal self-timed write circuitry ensures deterministic write latency without external handshake.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (4M × 18-bit organization)
Max Clock Frequency250 MHz - enables 500 MT/s effective data rate per port
Data Bus Width18-bit bidirectional I/O per port - supports parallel packet header + payload handling
VDD / VDDQCore VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V - allows interface to 1.5V or 1.8V logic domains
Burst Length2-word fixed burst - delivers two consecutive 18-bit words per access with no turnaround delay
Package165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-density routing in telecom modules
JTAG SupportIEEE 1149.1 compliant - enables boundary-scan testing and in-system debug of memory subsystems

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous write data inputsLatched on rising edge of K/K; supports full 18-bit parallel write bursts
Q[17:0]Synchronous read data outputsDriven on rising edges of C/C; tri-stated when RPS inactive
RPS / WPSRead/Write Port Select (active-low)Enables independent port activation; allows concurrent read+write operations
BWS[1:0]Byte Write Select (active-low)Selects which 9-bit half of D[17:0] is written - enables partial-word updates without read-modify-write
C / C, K / KDifferential clock inputsK/K control input timing; C/C control output timing - minimizes skew across high-speed buses
CQ / CQEcho clocks referenced to C/CEnable source-synchronous capture at controller; eliminate board-level flight-time mismatch
ZQOutput impedance calibration inputConnects to external resistor to ground to tune Q[17:0] and CQ/CQ drive strength to match 50 Ω trace impedance
DOFFDLL disable controlPulling low disables internal DLL - used only for specific timing margining or legacy system compatibility

Key Features

FeatureDesign Value
Separate read/write portsEliminates bus turnaround overhead - enables true concurrent access for full-duplex packet buffering
2-word DDR burstDelivers 36 bits per clock cycle (18-bit × 2) - matches typical ATM/POS cell or Ethernet frame header+payload width
Echo clocks (CQ/CQ)Provide source-synchronous timing reference - simplifies PCB layout and relaxes setup/hold margins at 500 MT/s
HSTL Class I outputsSupports 1.5V logic interfacing with programmable drive strength - compatible with FPGA transceivers and ASIC memory controllers
On-chip DLLAligns internal data launch to C/C edges - achieves < ±50 ps jitter tolerance at 250 MHz operation

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing incoming/outgoing IP packets in high-speed routers before forwarding decisions.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level packet buffer with zero-latency concurrent read/write access.

Use Value: Eliminates bus contention and turnaround cycles, enabling sustained 10 Gbps+ throughput with deterministic latency.

Use Scenario: Holding ATM cell headers and payloads in OC-192/STM-64 line interface units.

IC Role / Device Role / Timing Role: High-bandwidth memory for real-time cell assembly/disassembly engines.

Use Value: 2-word burst aligns with 53-byte ATM cell structure; echo clocks ensure reliable capture at 250 MHz controller interface.

Switch Fabric Lookup TableFPGA Co-Processor Cache

Use Scenario: Storing MAC address tables and VLAN mappings in Layer 2/L3 switches.

IC Role / Device Role / Timing Role: Low-latency, high-throughput memory for parallel TCAM-assisted lookups.

Use Value: Independent ports allow simultaneous table update (write) and lookup (read) - prevents pipeline stalls during table maintenance.

Use Scenario: Off-chip cache for FPGA-based video processing pipelines requiring dual-stream pixel buffering.

IC Role / Device Role / Timing Role: External memory resource synchronized to FPGA fabric clocks via CQ/CQ feedback.

Use Value: HSTL I/O and DLL alignment enable clean signal integrity at 500 MT/s - critical for 4K/60fps real-time processing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-bit bus, 10 ns access time, 3.3V core, different pinout and timing modelDesigned for legacy parallel bus systems; lacks echo clocks and DLLChoose only if migrating from older IDT QDR-I designs and 3.3V supply is mandatory
ISSI IS61WV102418B1M × 18 sync SRAM, single-port, 166 MHz max, no DDR or echo clocksLower bandwidth, simpler interface - suitable for cost-sensitive non-concurrent use casesSelect when concurrent read/write is not required and system clock is ≤166 MHz

Compared with IDT72T3615L10BG and IS61WV102418B, the CY7C1512V18 uniquely delivers 250 MHz DDR dual-port operation with echo clocks and DLL support - essential for new 10G+ networking designs requiring deterministic timing and zero-turnaround bandwidth.

Availability

CY7C1512V18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, switch fabric lookup tables, and FPGA co-processor cache applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1512V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR-II SRAM product line was developed specifically for high-bandwidth, low-latency memory subsystems in carrier-grade networking equipment - emphasizing concurrent access, source-synchronous timing, and robust signal integrity at multi-Gbps rates.

FAQ

What is the function of the ZQ pin on CY7C1512V18?

The ZQ pin calibrates the output driver impedance of Q[17:0] and echo clocks CQ/CQ to match the system's data bus characteristic impedance. It must be connected to a precision 50 Ω resistor to ground (setting output impedance to 10 Ω) or directly to VDDQ for minimum impedance mode. Leaving it floating or tying to GND violates electrical specifications and causes signal integrity failure.

Can CY7C1512V18 operate with only a single clock domain?

Yes - the device supports single-clock mode where K/K serve as both input and output clocks. In this configuration, C/C are unused, and data is driven on K/K edges. However, echo clock functionality (CQ/CQ) and optimal skew compensation are lost, reducing maximum reliable operating frequency and increasing timing margin requirements on the PCB.

How does the BWS[1:0] signal work for partial writes?

BWS[1:0] controls two independent 9-bit write lanes: BWS0 enables D[8:0], BWS1 enables D[17:9]. When either is deasserted (high), the corresponding 9-bit segment remains unaltered. This enables atomic 9-bit updates without read-modify-write cycles - critical for maintaining consistency in multi-field packet header modifications.

Is DOFF pin required to be tied high in normal operation?

Yes - DOFF must be held high (VDDQ) during normal operation to enable the internal Delay Lock Loop. Pulling DOFF low disables the DLL, causing output timing to shift significantly (±1 ns skew), violating AC timing specs in the datasheet. Only use DOFF = low for specific characterization or legacy system compatibility testing.

CY7C1512V18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1512V18-250BZXC FAQ

1.How can I place an order for CY7C1512V18-250BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1512V18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1512V18-250BZXC reliable?

The price and inventory of CY7C1512V18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512V18-250BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1512V18-250BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1512V18-250BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1512V18-250BZXC?

CY7C1512V18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1512V18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1512V18-250BZXC?

For technical support, including CY7C1512V18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512V18-250BZXC requirements.

6.How does Aetrix verify that CY7C1512V18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1512V18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512V18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1512V18-250BZXC?

All CY7C1512V18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512V18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1512V18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1512V18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1512V18-250BZXC Tags

  • CY7C1512V18-250BZXC
  • CY7C1512V18-250BZXC PDF
  • CY7C1512V18-250BZXC Datasheet
  • CY7C1512V18-250BZXC Specifications
  • CY7C1512V18-250BZXC Images
  • Infineon Technologies
  • Infineon Technologies CY7C1512V18-250BZXC
  • Buy CY7C1512V18-250BZXC
  • CY7C1512V18-250BZXC Price
  • CY7C1512V18-250BZXC Distributor
  • CY7C1512V18-250BZXC Supplier
  • CY7C1512V18-250BZXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER