Infineon Technologies CY7C1513AV18-200BZC
- Part No.:
- CY7C1513AV18-200BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1513AV18-200BZC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1513AV18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR-II SRAM with separate read/write ports, 300 MHz clock support (600 Mbps DDR data rate), 1.5-cycle read latency with DLL enabled, and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.
For engineers reviewing the CY7C1513AV18 datasheet, CY7C1513AV18 pinout, CY7C1513AV18 application, or CY7C1513AV18 equivalent, key selection criteria include burst depth (4-word), dual-clock timing (K/K and C/C), echo clock support (CQ/CQ), HSTL-18 I/O compatibility, and DLL-enabled latency mode.
Technical Context
The CY7C1513AV18 implements QDR-II architecture with fully independent synchronous read and write ports sharing a multiplexed 20-bit address bus (A[19:0]). Read and write operations are latched on alternate rising edges of K/K clocks, enabling true concurrency without bus turnaround.
It uses two dedicated clock pairs: K/K for address/data capture and C/C for output timing, with free-running echo clocks CQ/CQ referenced to C/C to simplify high-speed data capture. The internal Delay Lock Loop (DLL) enables precise 1.5-cycle read latency at 300 MHz; disabling DLL reverts to QDR-I mode with 1-cycle latency up to 167 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 4M × 18-bit (72 Mbit); supports 1M × 18 array × 4 banks |
| Max Clock Frequency | 300 MHz (K/K input); enables 600 Mbps DDR throughput per port |
| Read Latency | 1.5 cycles with DLL enabled; 1 cycle with DLL disabled (DOFF = LOW) |
| Supply Voltages | VDD = 1.8 V ± 0.1 V (core); VDDQ = 1.4–1.8 V (I/O); VREF = static reference for HSTL |
| Burst Length | Fixed 4-word burst per access; reduces address bus toggling frequency by 4× |
| Output Drive | Variable-strength HSTL-18 compliant outputs; impedance tuned via ZQ pin |
| Package | 165-ball FBGA (15 mm × 17 mm × 1.4 mm); Pb-free and RoHS-compliant option available |
Pinout & Package
165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm footprint, 1.4 mm height, 0.8 mm ball pitch. Compliant with JEDEC MO-245, RoHS and lead-free assembly requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edge of K/K; 18-bit parallel write path |
| Q[17:0] | Synchronous read data outputs | Driven on rising edge of C/C; tri-stated when RPS deasserted |
| A[19:0] | Multiplexed address inputs | Shared by read/write ports; 20 bits address 4M locations |
| RPS / WPS | Active-low port select controls | Enable independent read or write initiation; no bus contention |
| BWS[1:0] | Byte write select (active low) | Selects which 9-bit byte (D[8:0] or D[17:9]) is written; preserves unselected bytes |
| K / K | Positive/negative input clocks | Edge-aligned pair for address/data capture; rising edges control all synchronous inputs |
| C / C | Positive/negative output clocks | Deskew-capable pair for Q[17:0] timing; used with CQ/CQ for source-synchronous capture |
| CQ / CQ | Echo clocks referenced to C/C | Free-running, phase-matched copies of C/C; simplify FPGA/ASIC data capture at 600 Mbps |
| ZQ | Output impedance calibration input | Connect to resistor-to-ground (RQ) to set Q/CQ output impedance to 0.2 × RQ |
| DOFF | DLL disable control | Pull LOW to disable DLL and operate in QDR-I mode (≤167 MHz, 1-cycle latency) |
| VDD / VDDQ / VSS / VREF | Power, ground, and reference | VDD = core logic (1.8 V); VDDQ = I/O drivers (1.4–1.8 V); VREF sets HSTL threshold |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates data bus turnaround overhead; enables full-duplex 600 Mbps sustained bandwidth |
| 4-word burst architecture | Reduces required address transitions by 75% per access; lowers system-level address bus frequency |
| Delay Lock Loop (DLL) | Enables deterministic 1.5-cycle read latency at 300 MHz; improves timing margin in high-speed designs |
| HSTL-18 compatible I/O | Supports 1.4–1.8 V VDDQ; variable drive strength calibrated via ZQ pin for signal integrity optimization |
| JTAG 1149.1 test interface | Enables boundary scan testing and in-system debug without additional test pads or probes |
Applications
| Network Packet Buffering | High-Speed Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches. IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with zero-turnaround concurrent read/write. Use Value: 4M × 18-bit depth supports >128 KB packet buffers; 300 MHz clock enables ≥1.2 GB/s aggregate bandwidth for 10G+ switch fabrics. |
Use Scenario: Interfacing between scheduler ASIC and SerDes PHY in multi-gigabit backplane interconnects. IC Role / Device Role / Timing Role: Synchronous pipeline buffer synchronizing asynchronous traffic domains using K/K and C/C clock domains. Use Value: Echo clocks CQ/CQ align data capture timing across multiple devices; eliminates board-level skew compensation logic. |
| Telecom Line Card Buffering | Baseband Processing Memory |
|
Use Scenario: Temporary storage of ATM cells or OTN frames in OC-192/STM-64 line interface modules. IC Role / Device Role / Timing Role: Burst-access SRAM providing deterministic latency for real-time cell scheduling and header processing. Use Value: DLL-enabled 1.5-cycle latency ensures sub-5 ns read response; meets strict jitter budgets for SONET/SDH timing recovery. |
Use Scenario: Intermediate data storage between FFT engines and channel encoders in LTE/5G baseband units. IC Role / Device Role / Timing Role: High-throughput memory co-processor feeding parallel DSP pipelines with 18-bit complex samples. Use Value: 18-bit wide interface matches typical IQ sample width; HSTL-18 signaling maintains signal integrity at 600 Mbps over 8-inch PCB traces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256B-20TIN | Asynchronous 32K × 8 SRAM; no DDR, no DLL, no echo clocks; 20 ns access time | Lower bandwidth (≤40 MB/s), no concurrent read/write; suitable only for non-pipelined control-plane buffering | Select only if system clock < 50 MHz and latency tolerance > 20 ns; not viable for 300 MHz QDR-II use cases |
| IS61WV102418BLL-10BLI | Synchronous 1M × 18 SRAM; single-port; 10 ns access; no burst, no echo clocks, no DLL | No concurrent access; requires external arbitration; max bandwidth ~180 MB/s at 100 MHz | Acceptable only for cost-sensitive, low-throughput applications where QDR-II features are unused |
Compared with AS7C3256B-20TIN and IS61WV102418BLL-10BLI, the CY7C1513AV18 uniquely delivers 600 Mbps DDR bandwidth, deterministic 1.5-cycle latency, and source-synchronous echo clocking - essential for 10G+ networking and real-time baseband systems.
Availability
CY7C1513AV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, telecom line card buffering, and baseband processing requiring stable component supply and long-term industrial availability.
Supply support for CY7C1513AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
The QDR-II SRAM product line targets high-speed infrastructure applications demanding deterministic latency, concurrent access, and source-synchronous timing - specifically optimized for networking, telecom, and baseband signal processing.
FAQ
What is the minimum VDDQ voltage supported for reliable operation?
The CY7C1513AV18 specifies VDDQ = 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed: HSTL-18 driver thresholds and output swing fall outside JEDEC-compliant margins, risking setup/hold violations at 300 MHz. Designs must maintain VDDQ ≥ 1.4 V across temperature and load.
Can C and C be driven from the same clock source with 180° phase shift?
Yes - C and C are designed for complementary 180° phase-shifted inputs. This configuration minimizes skew between output clock edges and enables precise double-data-rate sampling of Q[17:0]. The device's timing specifications assume matched C/C flight times within ±50 ps.
How does DOFF affect read latency and maximum operating frequency?
When DOFF = LOW, the DLL is disabled and the device operates in QDR-I mode: read latency reduces to 1 cycle but maximum frequency drops to 167 MHz. At 300 MHz, DLL must be enabled (DOFF = HIGH via 10 kΩ pull-up) to meet timing; DLL-off mode is incompatible with rated speed grade.
Is ZQ pin required for functional operation, or only for impedance tuning?
ZQ is required for production-level signal integrity: it calibrates output driver impedance to match the PCB trace (typically 50 Ω). Leaving ZQ unconnected or tied to GND violates specification and causes excessive overshoot/ringing on Q[17:0] and CQ/CQ outputs at 600 Mbps. Connect ZQ to RQ (≈240 Ω) to ground.
CY7C1513AV18-200BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1513AV18-200BZC FAQ
1.How can I place an order for CY7C1513AV18-200BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1513AV18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1513AV18-200BZC reliable?
The price and inventory of CY7C1513AV18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1513AV18-200BZC is usually 5 days.
3.What payment methods are accepted for CY7C1513AV18-200BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1513AV18-200BZC transactions.
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CY7C1513AV18-200BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1513AV18-200BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1513AV18-200BZC?
For technical support, including CY7C1513AV18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1513AV18-200BZC requirements.
6.How does Aetrix verify that CY7C1513AV18-200BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1513AV18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1513AV18-200BZC meets industry standards.
7.What is the process for return or replacement of CY7C1513AV18-200BZC?
All CY7C1513AV18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1513AV18-200BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1513AV18-200BZC part is unused and in its original packaging.
Return procedure for CY7C1513AV18-200BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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