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Infineon Technologies CY7C1513AV18-200BZI

Part No.:
CY7C1513AV18-200BZI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1513AV18-200BZI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,813

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Product details

Overview

CY7C1513AV18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR-II SRAM with separate read/write ports, 300 MHz clock support, DDR interfaces on both ports (600 MHz data rate), and 165-ball FBGA package. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1513AV18 datasheet, CY7C1513AV18 pinout, CY7C1513AV18 application, or CY7C1513AV18 equivalent, key selection criteria include burst depth (4-word), DLL-enabled 1.5-cycle read latency, HSTL-18 I/O compatibility, and dual-clock timing control (K/K and C/C) for skew management in multi-device parallel memory systems.

Technical Context

The CY7C1513AV18 implements QDR-II architecture with fully independent synchronous read and write ports sharing a multiplexed 20-bit address bus. Address latching occurs on alternating rising edges of K and K clocks, enabling pipelined 4-word burst transfers without bus turnaround.

It uses two dedicated clock domains: K/K for address/data input synchronization and C/C for output timing, with echo clocks CQ/CQ referenced to C/C to simplify high-speed capture at the controller. The internal Delay Lock Loop (DLL) enables precise 1.5-cycle read latency when enabled, or reverts to QDR-I 1-cycle latency with DOFF asserted.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4M × 18-bit (72 Mbit) - supports 18-bit wide data paths in packet buffer and frame store applications.
Max Clock Frequency 300 MHz - enables 600 MT/s effective data rate per port via DDR interface.
Read Latency 1.5 cycles (DLL on) or 1 cycle (DLL off) - determines minimum time between read command and first valid data on Q[17:0].
Core Supply Voltage VDD = 1.8 V ± 0.1 V - defines core logic voltage domain and power integrity requirements.
I/O Supply Voltage VDDQ = 1.4 V to 1.8 V - sets HSTL-18 compatible output drive level and termination reference.
Burst Length 4-word sequential - reduces address bus toggling frequency by 4× versus single-word access.
Package 165-ball FBGA (15 × 17 × 1.4 mm) - surface-mount footprint with thermal and signal integrity optimized for high-speed PCB routing.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs Sampled on rising edge of K/K; 18-bit parallel data path for write operations.
Q[17:0] Synchronous read data outputs Driven on rising edge of C/C; tri-stated when RPS is deasserted.
A[19:0] Multiplexed address inputs 20-bit bus shared by read/write ports; latched on alternating K/K edges for burst addressing.
RPS / WPS Active-low port select controls Independent enable signals for read and write ports; allow depth expansion without external gating.
BWS[1:0] Byte write select inputs Two active-low signals controlling D[8:0] and D[17:9]; enable partial-word writes without read-modify-write.
K / K Positive/negative input clocks Primary timing references for all synchronous inputs; rising edges latch addresses, data, and controls.
C / C Positive/negative output clocks Reference clocks for Q[17:0] and CQ/CQ; used to deskew flight times across multiple devices.
CQ / CQ Echo clocks Free-running copies of C/C synchronized to output clock domain; simplify source-synchronous capture at controller.
ZQ Output impedance calibration input Connects to external resistor to ground to tune Q[17:0]/CQ/CQ drive strength to match 50 Ω system trace impedance.
DOFF DLL disable control Active-low pin; grounding disables DLL and forces QDR-I timing mode (max 167 MHz).

Key Features

Feature Design Value
Separate read/write ports Enables true concurrent access-no bus turnaround required, eliminating inter-port contention in full-duplex traffic buffers.
4-word burst architecture Reduces address bus frequency by 75% versus single-word mode, lowering routing complexity and EMI in dense backplane designs.
HSTL-18 compatible I/O Supports 1.4–1.8 V VDDQ operation with programmable drive strength, ensuring signal integrity on high-speed parallel buses.
JTAG 1149.1 test access port Enables boundary-scan testing of memory interconnects without requiring functional access, critical for production test coverage.
Delay Lock Loop (DLL) Aligns internal data launch to C/C clock edges with sub-cycle precision, enabling reliable 300 MHz operation with 1.5-cycle latency.

Applications

Network Packet Buffering Telecom Line Card Frame Store

Use Scenario: Storing incoming/outgoing Ethernet or SONET/SDH frames in real time within carrier-grade switching ASICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as a zero-latency, full-duplex frame buffer-reads next packet while writing current one.

Use Value: 4M × 18-bit depth supports up to 72 Mbit of buffered payload; 300 MHz clock enables 1.08 GB/s aggregate bandwidth (540 MB/s per port).

Use Scenario: Holding ATM cell headers and payloads during cross-connect switching in OC-192/STM-64 line cards.

IC Role / Device Role / Timing Role: High-speed memory co-processor interfacing directly with SerDes PHYs and traffic manager units.

Use Value: Independent RPS/WPS allows simultaneous header lookup (read) and payload write without arbitration delay or pipeline stalls.

High-Speed Test Equipment Memory Real-Time Video Processing Buffer

Use Scenario: Capturing high-resolution digital waveform samples at >500 MS/s in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: Burst-access memory staging raw sample streams before compression or analysis logic.

Use Value: DLL-enabled 1.5-cycle read latency ensures deterministic timing alignment between sample clock and processing engine clock domains.

Use Scenario: Intermediate storage for 4K video frame lines during chroma subsampling and motion estimation in broadcast encoders.

IC Role / Device Role / Timing Role: Synchronous pipelined buffer decoupling sensor readout (write port) from encoder pipeline (read port).

Use Value: 18-bit data width matches YUV 4:2:2 pixel packing; HSTL-18 I/O maintains signal fidelity at 600 MT/s across 15 cm PCB traces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PA 36-bit × 2M, 10 ns access, 3.3 V LVTTL I/O, no DLL, asynchronous reset Limited to 100 MHz max; lacks echo clocks and burst optimization for packetized traffic Choose only if legacy 3.3 V system integration or cost-sensitive non-burst applications require simpler timing.
ISSI IS61WV102418B 1M × 18-bit, 165 MHz max, 3.3 V/2.5 V/1.8 V flexible VDDQ, no QDR-II architecture Single-port, no concurrent read/write; requires external arbitration for full-duplex use Select only for space-constrained designs where 72 Mbit density is unnecessary and burst bandwidth is secondary.

Compared with IDT72T3615L10PA and IS61WV102418B, the CY7C1513AV18 uniquely delivers 300 MHz QDR-II concurrency, DLL-controlled latency, and echo-clock–assisted capture-making it irreplaceable for deterministic, high-throughput packet buffering where timing closure and bandwidth density are primary constraints.

Availability

CY7C1513AV18 is available at Aetrix Electronics and suitable for network infrastructure, telecom line card, and high-speed test equipment requiring stable component supply, long-lifecycle assurance, and Pb-free compliance.

Supply support for CY7C1513AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR-II SRAM product line-including CY7C1513AV18-is engineered specifically for deterministic, low-latency, full-duplex memory access in packet-switched networking and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1513AV18?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled low, the device operates in QDR-I mode with 1-cycle read latency and reduced maximum frequency (167 MHz). For standard QDR-II operation at 300 MHz with 1.5-cycle latency, DOFF must be tied high via ≤10 kΩ pull-up to VDDQ.

Can CY7C1513AV18 operate with only a single clock (K) instead of differential K/K?

Yes-CY7C1513AV18 supports single-clock mode where K serves as both positive and negative input clock (K = K). In this configuration, C and C must also be tied together, and CQ/CQ derive from K. However, differential clocking is strongly recommended for 300 MHz operation to minimize jitter and improve timing margin.

How does the ZQ pin affect output drive strength and signal integrity?

The ZQ pin connects to an external resistor (typically 100 Ω to ground) to calibrate the output driver impedance of Q[17:0], CQ, and CQ to ~20 Ω (0.2 × RQ). This matches standard 50 Ω transmission lines when using series source termination, reducing reflections and improving eye diagram margins at 600 MT/s.

What is the purpose of BWS[1:0] in CY7C1513AV18's write operation?

BWS[1:0] are active-low byte write select signals that enable partial-word writes: BWS0 controls D[8:0] and BWS1 controls D[17:9]. When either is deasserted, the corresponding 9-bit byte is ignored during the write cycle, preserving existing data in those bits-eliminating need for read-modify-write sequences in protocol header updates.

CY7C1513AV18-200BZI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1513AV18-200BZI FAQ

1.How can I place an order for CY7C1513AV18-200BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1513AV18-200BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1513AV18-200BZI reliable?

The price and inventory of CY7C1513AV18-200BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1513AV18-200BZI is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1513AV18-200BZI transactions.

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CY7C1513AV18-200BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1513AV18-200BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1513AV18-200BZI?

For technical support, including CY7C1513AV18-200BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1513AV18-200BZI requirements.

6.How does Aetrix verify that CY7C1513AV18-200BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1513AV18-200BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1513AV18-200BZI meets industry standards.

7.What is the process for return or replacement of CY7C1513AV18-200BZI?

All CY7C1513AV18-200BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1513AV18-200BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1513AV18-200BZI part is unused and in its original packaging.

Return procedure for CY7C1513AV18-200BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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