Infineon Technologies CY7C1513KV18-250BZXC

Overview

CY7C1513KV18-250BZXC from Cypress Semiconductor is a 4M × 18, 72-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum clock frequency (K/K), 500 MHz DDR data rate (1.8 V core / 1.4–1.8 V I/O), and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers concurrent read/write operations for high-throughput packet buffering in network line cards.

For engineers reviewing the CY7C1513KV18-250BZXC datasheet, CY7C1513KV18-250BZXC pinout, CY7C1513KV18-250BZXC application, or CY7C1513KV18-250BZXC equivalent, key selection criteria include 1.5-cycle read latency (DOFF = HIGH), echo clocks (CQ/CQ) for timing margin recovery, separate RPS/WPS controls for depth expansion, HSTL-compatible 18-bit bidirectional data ports, and JTAG 1149.1 test access.

Technical Context

This QDR II SRAM implements dual independent synchronous ports: read port latches address on rising K edge and outputs data on C/C edges with echo-clock alignment; write port samples D[17:0] and BWS[1:0] on rising K/K edges and executes self-timed writes. The internal 1M × 18 memory array supports full coherency with no bus turnaround.

Its PLL synchronizes output timing to minimize skew across high-speed traces; DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes; VREF and ZQ pins enable programmable impedance calibration for signal integrity at 500 Mbps per pin.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch BGA (13 mm × 15 mm × 1.4 mm height), RoHS-compliant, 0.8 mm ball pitch, bottom-side thermal pad not electrically connected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1513KV18-300BZXC, the -250BZXC trades 100 MHz clock headroom for lower power and relaxed layout; versus AS7C34098B-250BIN, it delivers double the effective bandwidth and eliminates arbitration overhead at the cost of higher pin count and complexity.

Availability

CY7C1513KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and radar signal processing buffer applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1513KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and real-time determinism.

CY7C1513KV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in high-speed communications infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1513KV18-250BZXC?

The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for improved timing margin in systems with long trace lengths; when LOW, it enables 1-cycle latency for minimal delay in tightly coupled controller interfaces. This setting is sampled synchronously on the rising edge of the K clock and remains active until changed.

How does the ZQ pin enable impedance calibration?

The ZQ pin connects to an external 240 Ω resistor to ground, allowing the device to calibrate its output driver strength and on-die termination to match PCB trace impedance. Calibration occurs automatically at power-up and can be retriggered via JTAG instruction, ensuring consistent signal integrity across voltage, temperature, and process variations without manual tuning.

Can CY7C1513KV18-250BZXC operate with only a single clock domain?

Yes - the device supports single-clock operation where K and C are tied together (and K and C tied together), eliminating need for separate clock trees. In this mode, data is sampled and driven on the same clock edges, reducing system complexity but limiting maximum achievable bandwidth compared to dual-clock configuration with echo-clock deskew.

What is the purpose of the BWS[1:0] signals in write operations?

BWS[1:0] are active-low byte write select signals that enable partial-word writes: BWS0 controls D[8:0], BWS1 controls D[17:9]. When a BWS signal is deasserted, the corresponding 9-bit byte is ignored during the write cycle, preserving existing memory contents - essential for protocol header updates without disturbing payload data in packet buffers.