Infineon Technologies CY7C1513KV18-250BZXI

Overview

CY7C1513KV18-250BZXI from Cypress Semiconductor is a 4M × 18, 72-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports, echo clocks (CQ/CQ), and PLL-based timing control for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1513KV18-250BZXI datasheet, CY7C1513KV18-250BZXI pinout, CY7C1513KV18-250BZXI application, or CY7C1513KV18-250BZXI equivalent, key selection criteria include concurrent read/write capability, 1.8 V core + flexible VDDQ, 165-ball FBGA (13 × 15 × 1.4 mm), DOFF-controlled read latency (1 or 1.5 cycles), and JTAG 1149.1 test support.

Technical Context

This QDR II SRAM implements true dual-port synchronous operation with independent K/K input clocks for address/data capture and C/C output clocks for data launch-enabling precise DDR timing without bus turnaround. Its internal pipelined architecture supports concurrent read and write transactions at full bandwidth.

The device uses a single multiplexed address bus latched on alternate rising edges of K, with depth expansion enabled via RPS/WPS controls and BWS[1:0] byte write selects. Read latency is configurable via DOFF: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH), and all writes are internally self-timed.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1513KV18-300BZXI, the -250BZXI trades 17% bandwidth for relaxed timing closure and ~12% lower active current; versus AS7C36256A-250BIN, it provides true dual-port concurrency and DDR signaling - enabling architectures impossible with asynchronous SRAM.

Availability

CY7C1513KV18-250BZXI is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom line cards, test instrumentation, and HPC interconnect designs requiring stable component supply, long-lifecycle support, and guaranteed Pb-free sourcing.

Supply support for CY7C1513KV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1513KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for bandwidth-intensive, low-latency buffer applications in networking infrastructure where concurrent read/write and deterministic timing are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1513KV18-250BZXI?

The DOFF (Data Output OFF) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting directly affects the number of clock cycles between address assertion and valid Q[17:0] output, and must be fixed at power-up.

Can CY7C1513KV18-250BZXI operate with only a single clock domain?

Yes - the device supports single-clock-mode operation where K and C are tied together (and K and C tied together). In this mode, data is launched on the same clock edges used for input capture, simplifying clock routing at the cost of reduced skew compensation capability compared to independent C/C usage.

How does the BWS[1:0] pin configuration support partial writes?

BWS0 controls write enable for D[8:0], and BWS1 controls D[17:9]. When either is deasserted (HIGH), the corresponding 9-bit byte is ignored during the write cycle - preserving existing data in those bits. This eliminates need for read-modify-write sequences in applications requiring nibble- or byte-granular updates.

Is JTAG boundary scan supported on CY7C1513KV18-250BZXI, and how is it enabled?

Yes - the device implements IEEE 1149.1 JTAG TAP with TDI, TDO, TCK, and TMS pins. JTAG is always enabled at power-up; no configuration fuse or register setting is required. Boundary scan testing follows standard 1149.1 protocols and supports full pin interconnect verification in assembled PCBs.