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Infineon Technologies CY7C1513KV18-300BZXC

Part No.:
CY7C1513KV18-300BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1513KV18-300BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,527

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Product details

Overview

CY7C1513KV18-300BZXC from Cypress Semiconductor is a 4M × 18 (72-Mbit) QDR® II SRAM with synchronous pipelined architecture, dual independent read/write ports, 300 MHz clock operation, DDR interfaces delivering 600 MT/s effective data rate, and 1.8 V core / 1.4–1.8 V I/O supply. It serves as high-bandwidth buffer memory in network packet processors requiring concurrent access and deterministic latency.

For engineers reviewing the CY7C1513KV18-300BZXC datasheet, CY7C1513KV18-300BZXC pinout, CY7C1513KV18-300BZXC application, or CY7C1513KV18-300BZXC equivalent, key selection criteria include four-word burst timing, echo clock (CQ/CQ) support for source-synchronous capture, DOFF-configurable 1.5-cycle vs. 1-cycle read latency, and FBGA-165 package compatibility with high-speed PCB routing constraints.

Technical Context

This QDR II SRAM implements separate K/K input clocks for address/data capture and C/C output clocks for data launch-enabling precise DDR timing control without bus turnaround. Its internal PLL synchronizes echo clocks (CQ/CQ) to output data edges, reducing setup/hold margin requirements at 600 MT/s.

The device supports depth expansion via RPS/WPS port selects and byte-level write masking (BWS[1:0]) across its 18-bit data width. All operations are fully synchronous with rising-edge-triggered registers, and writes are internally self-timed to guarantee atomicity without external handshaking.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4M × 18 = 72 Mbit; provides 4 million 18-bit words for packet buffering or table storage.
Max Clock Frequency 300 MHz; enables 600 MT/s DDR throughput on both read and write ports simultaneously.
Read Latency Configurable: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); determines pipeline depth in controller interface logic.
Core Supply VDD = 1.8 V ± 0.1 V; fixed low-voltage core reduces dynamic power and thermal load in dense memory subsystems.
I/O Supply Range VDDQ = 1.4 V to 1.8 V; supports interoperability with 1.5 V or 1.8 V ASIC/FPGA I/O banks.
Package 165-ball FBGA (13 × 15 × 1.4 mm); fine-pitch layout optimized for controlled-impedance routing and signal integrity at >300 MHz.
Burst Length Four-word burst per access; halves required address transitions versus single-word mode, easing address bus timing closure.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free termination.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Write data inputs 18-bit parallel data sampled on rising edge of K clock; latched synchronously for self-timed write execution.
Q[17:0] Read data outputs 18-bit DDR outputs launched on rising edges of C and C clocks; driven only when RPS is asserted.
A[19:0] Multiplexed address bus 20-bit address shared by read/write ports; latched on alternating K edges to support concurrent transactions.
RPS Read port select Active-low synchronous enable; initiates read burst and controls Q[17:0] tristate behavior post-access.
WPS Write port select Active-low synchronous enable; gates D[17:0] and BWS[1:0] into write path; ignored if deasserted.
BWS[1:0] Byte write selects Two active-low signals enabling independent 9-bit byte writes within 18-bit word; preserves unselected bytes.
C, C Output data clocks Differential pair controlling Q[17:0] launch timing; used with echo clocks (CQ/CQ) for source-synchronous capture.
K, K Input clocks Differential pair capturing A[19:0], D[17:0], RPS, WPS, BWS[1:0]; rising edges define all synchronous timing boundaries.
CQ, CQ Echo clocks Output-referenced clocks aligned to Q[17:0] data edges; simplify FPGA/ASIC capture logic by eliminating flight-time skew compensation.
DOFF Read latency control Static input selecting 1-cycle (LOW) or 1.5-cycle (HIGH) read latency; configures internal pipeline staging.

Key Features

Feature Design Value
Independent read/write ports Enables full-duplex memory access-no bus turnaround required-critical for real-time packet forwarding engines.
Four-word burst architecture Reduces address bus toggling frequency by 4× versus single-word mode, lowering EMI and simplifying timing closure.
Synchronous self-timed writes Eliminates external write acknowledge signaling; guarantees write completion within fixed clock cycles regardless of process/voltage/temp.
Programmable read latency (1 or 1.5 cycles) Allows tuning of controller pipeline depth to match system timing budget-supports both low-latency and high-throughput modes.
HSTL-compatible I/O with variable drive strength Ensures signal integrity on high-speed traces; drive strength configurable to match trace impedance and reduce reflections.

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-wait-state buffer between ingress parser and egress scheduler, synchronized to line-rate clocks.

Use Value: Concurrent read/write eliminates arbitration delay, enabling deterministic 10 Gbps+ throughput with sub-10 ns latency variation.

Use Scenario: Holding configuration tables and statistics counters in 40G/100G OTN framer ASICs.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory interfaced directly to ASIC's QDR II controller block.

Use Value: Four-word burst and echo clocks ensure reliable data capture at 300 MHz without complex deskew circuitry.

Baseband Processing Cache Test Equipment Pattern Memory

Use Scenario: Temporary storage of FFT coefficients and channel estimates in LTE/5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Low-latency working memory accessed alternately by DSP cores and hardware accelerators.

Use Value: 1.5-cycle read latency (DOFF = HIGH) aligns with pipeline stages of fixed-point FFT engines for optimal utilization.

Use Scenario: Storing stimulus/response patterns in high-speed automated test equipment (ATE) for SoC validation.

IC Role / Device Role / Timing Role: Deterministic-access memory referenced by pattern generator state machine running at 300 MHz.

Use Value: Synchronous self-timed writes guarantee exact timing alignment between pattern trigger and data commit-no jitter accumulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1513KV18-250BZXC 250 MHz max clock (vs. 300 MHz); lower bandwidth (500 MT/s), reduced operating current (500 mA vs. 570 mA). Suitable for cost-sensitive telecom systems where 10 Gbps line rate is sufficient and thermal headroom is constrained. Select when system clock domain operates ≤250 MHz and power envelope limits exceed 570 mA.
AS7C3256A-15JCIN Asynchronous 32K × 8 SRAM; no DDR, no echo clocks, no burst mode; 15 ns access time, 3.3 V only. Applicable only in legacy designs with simple address/data multiplexing and no concurrent read/write requirement. Not interchangeable-requires complete interface redesign; use only for brownfield upgrades with no QDR II controller support.

Compared with CY7C1513KV18-250BZXC, the -300BZXC delivers 20% higher bandwidth and tighter timing margins but consumes ~14% more current; versus AS7C3256A-15JCIN, it requires a QDR II–capable controller but enables full-duplex operation and deterministic latency critical for modern packet processing.

Availability

CY7C1513KV18-300BZXC is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, baseband units, and high-speed test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1513KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

CY7C1513KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, concurrent-access memory subsystems in packet-switched infrastructure where bus turnaround overhead must be eliminated.

FAQ

What is the function of the DOFF pin on CY7C1513KV18-300BZXC?

The DOFF (Data Out Fast) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting is sampled at power-up and remains static during operation-no runtime reconfiguration is supported.

Can CY7C1513KV18-300BZXC operate with only a single clock domain (K only)?

Yes-the device supports single-clock mode where K drives both input capture and output launch. In this mode, C and C are tied to K and K respectively, and echo clocks (CQ/CQ) remain functional. However, dual-clock mode (separate K/K and C/C) is required to achieve full timing deskew benefits and maximum bandwidth efficiency.

How does byte write select (BWS[1:0]) work for the 18-bit data width?

BWS[0] controls the lower 9 bits (D[8:0]), and BWS[1] controls the upper 9 bits (D[17:9]). Both are active-low; asserting either disables writing to its respective 9-bit byte while preserving existing data in that byte. This enables partial-word updates without read-modify-write cycles-essential for metadata field manipulation in packet buffers.

Is the 165-ball FBGA package of CY7C1513KV18-300BZXC compatible with standard reflow profiles?

Yes-the package complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤260°C). Board layout must observe 0.8 mm ball pitch spacing, controlled-impedance routing for K/K and C/C pairs, and dedicated VSS/VDDQ decoupling per datasheet recommendations to maintain signal integrity at 300 MHz.

CY7C1513KV18-300BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1513KV18-300BZXC FAQ

1.How can I place an order for CY7C1513KV18-300BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1513KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1513KV18-300BZXC reliable?

The price and inventory of CY7C1513KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1513KV18-300BZXC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1513KV18-300BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1513KV18-300BZXC?

CY7C1513KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1513KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1513KV18-300BZXC?

For technical support, including CY7C1513KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1513KV18-300BZXC requirements.

6.How does Aetrix verify that CY7C1513KV18-300BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1513KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1513KV18-300BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1513KV18-300BZXC?

All CY7C1513KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1513KV18-300BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1513KV18-300BZXC part is unused and in its original packaging.

Return procedure for CY7C1513KV18-300BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1513KV18-300BZXC Tags

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