Infineon Technologies CY7C1513KV18-300BZXC
- Part No.:
- CY7C1513KV18-300BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1513KV18-300BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1513KV18-300BZXC from Cypress Semiconductor is a 4M × 18 (72-Mbit) QDR® II SRAM with synchronous pipelined architecture, dual independent read/write ports, 300 MHz clock operation, DDR interfaces delivering 600 MT/s effective data rate, and 1.8 V core / 1.4–1.8 V I/O supply. It serves as high-bandwidth buffer memory in network packet processors requiring concurrent access and deterministic latency.
For engineers reviewing the CY7C1513KV18-300BZXC datasheet, CY7C1513KV18-300BZXC pinout, CY7C1513KV18-300BZXC application, or CY7C1513KV18-300BZXC equivalent, key selection criteria include four-word burst timing, echo clock (CQ/CQ) support for source-synchronous capture, DOFF-configurable 1.5-cycle vs. 1-cycle read latency, and FBGA-165 package compatibility with high-speed PCB routing constraints.
Technical Context
This QDR II SRAM implements separate K/K input clocks for address/data capture and C/C output clocks for data launch-enabling precise DDR timing control without bus turnaround. Its internal PLL synchronizes echo clocks (CQ/CQ) to output data edges, reducing setup/hold margin requirements at 600 MT/s.
The device supports depth expansion via RPS/WPS port selects and byte-level write masking (BWS[1:0]) across its 18-bit data width. All operations are fully synchronous with rising-edge-triggered registers, and writes are internally self-timed to guarantee atomicity without external handshaking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4M × 18 = 72 Mbit; provides 4 million 18-bit words for packet buffering or table storage. |
| Max Clock Frequency | 300 MHz; enables 600 MT/s DDR throughput on both read and write ports simultaneously. |
| Read Latency | Configurable: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); determines pipeline depth in controller interface logic. |
| Core Supply | VDD = 1.8 V ± 0.1 V; fixed low-voltage core reduces dynamic power and thermal load in dense memory subsystems. |
| I/O Supply Range | VDDQ = 1.4 V to 1.8 V; supports interoperability with 1.5 V or 1.8 V ASIC/FPGA I/O banks. |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm); fine-pitch layout optimized for controlled-impedance routing and signal integrity at >300 MHz. |
| Burst Length | Four-word burst per access; halves required address transitions versus single-word mode, easing address bus timing closure. |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free termination.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Write data inputs | 18-bit parallel data sampled on rising edge of K clock; latched synchronously for self-timed write execution. |
| Q[17:0] | Read data outputs | 18-bit DDR outputs launched on rising edges of C and C clocks; driven only when RPS is asserted. |
| A[19:0] | Multiplexed address bus | 20-bit address shared by read/write ports; latched on alternating K edges to support concurrent transactions. |
| RPS | Read port select | Active-low synchronous enable; initiates read burst and controls Q[17:0] tristate behavior post-access. |
| WPS | Write port select | Active-low synchronous enable; gates D[17:0] and BWS[1:0] into write path; ignored if deasserted. |
| BWS[1:0] | Byte write selects | Two active-low signals enabling independent 9-bit byte writes within 18-bit word; preserves unselected bytes. |
| C, C | Output data clocks | Differential pair controlling Q[17:0] launch timing; used with echo clocks (CQ/CQ) for source-synchronous capture. |
| K, K | Input clocks | Differential pair capturing A[19:0], D[17:0], RPS, WPS, BWS[1:0]; rising edges define all synchronous timing boundaries. |
| CQ, CQ | Echo clocks | Output-referenced clocks aligned to Q[17:0] data edges; simplify FPGA/ASIC capture logic by eliminating flight-time skew compensation. |
| DOFF | Read latency control | Static input selecting 1-cycle (LOW) or 1.5-cycle (HIGH) read latency; configures internal pipeline staging. |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Enables full-duplex memory access-no bus turnaround required-critical for real-time packet forwarding engines. |
| Four-word burst architecture | Reduces address bus toggling frequency by 4× versus single-word mode, lowering EMI and simplifying timing closure. |
| Synchronous self-timed writes | Eliminates external write acknowledge signaling; guarantees write completion within fixed clock cycles regardless of process/voltage/temp. |
| Programmable read latency (1 or 1.5 cycles) | Allows tuning of controller pipeline depth to match system timing budget-supports both low-latency and high-throughput modes. |
| HSTL-compatible I/O with variable drive strength | Ensures signal integrity on high-speed traces; drive strength configurable to match trace impedance and reduce reflections. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-wait-state buffer between ingress parser and egress scheduler, synchronized to line-rate clocks. Use Value: Concurrent read/write eliminates arbitration delay, enabling deterministic 10 Gbps+ throughput with sub-10 ns latency variation. |
Use Scenario: Holding configuration tables and statistics counters in 40G/100G OTN framer ASICs. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory interfaced directly to ASIC's QDR II controller block. Use Value: Four-word burst and echo clocks ensure reliable data capture at 300 MHz without complex deskew circuitry. |
| Baseband Processing Cache | Test Equipment Pattern Memory |
|
Use Scenario: Temporary storage of FFT coefficients and channel estimates in LTE/5G massive MIMO baseband units. IC Role / Device Role / Timing Role: Low-latency working memory accessed alternately by DSP cores and hardware accelerators. Use Value: 1.5-cycle read latency (DOFF = HIGH) aligns with pipeline stages of fixed-point FFT engines for optimal utilization. |
Use Scenario: Storing stimulus/response patterns in high-speed automated test equipment (ATE) for SoC validation. IC Role / Device Role / Timing Role: Deterministic-access memory referenced by pattern generator state machine running at 300 MHz. Use Value: Synchronous self-timed writes guarantee exact timing alignment between pattern trigger and data commit-no jitter accumulation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1513KV18-250BZXC | 250 MHz max clock (vs. 300 MHz); lower bandwidth (500 MT/s), reduced operating current (500 mA vs. 570 mA). | Suitable for cost-sensitive telecom systems where 10 Gbps line rate is sufficient and thermal headroom is constrained. | Select when system clock domain operates ≤250 MHz and power envelope limits exceed 570 mA. |
| AS7C3256A-15JCIN | Asynchronous 32K × 8 SRAM; no DDR, no echo clocks, no burst mode; 15 ns access time, 3.3 V only. | Applicable only in legacy designs with simple address/data multiplexing and no concurrent read/write requirement. | Not interchangeable-requires complete interface redesign; use only for brownfield upgrades with no QDR II controller support. |
Compared with CY7C1513KV18-250BZXC, the -300BZXC delivers 20% higher bandwidth and tighter timing margins but consumes ~14% more current; versus AS7C3256A-15JCIN, it requires a QDR II–capable controller but enables full-duplex operation and deterministic latency critical for modern packet processing.
Availability
CY7C1513KV18-300BZXC is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, baseband units, and high-speed test equipment requiring stable component supply across extended production lifecycles.
Supply support for CY7C1513KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.
CY7C1513KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, concurrent-access memory subsystems in packet-switched infrastructure where bus turnaround overhead must be eliminated.
FAQ
What is the function of the DOFF pin on CY7C1513KV18-300BZXC?
The DOFF (Data Out Fast) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting is sampled at power-up and remains static during operation-no runtime reconfiguration is supported.
Can CY7C1513KV18-300BZXC operate with only a single clock domain (K only)?
Yes-the device supports single-clock mode where K drives both input capture and output launch. In this mode, C and C are tied to K and K respectively, and echo clocks (CQ/CQ) remain functional. However, dual-clock mode (separate K/K and C/C) is required to achieve full timing deskew benefits and maximum bandwidth efficiency.
How does byte write select (BWS[1:0]) work for the 18-bit data width?
BWS[0] controls the lower 9 bits (D[8:0]), and BWS[1] controls the upper 9 bits (D[17:9]). Both are active-low; asserting either disables writing to its respective 9-bit byte while preserving existing data in that byte. This enables partial-word updates without read-modify-write cycles-essential for metadata field manipulation in packet buffers.
Is the 165-ball FBGA package of CY7C1513KV18-300BZXC compatible with standard reflow profiles?
Yes-the package complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤260°C). Board layout must observe 0.8 mm ball pitch spacing, controlled-impedance routing for K/K and C/C pairs, and dedicated VSS/VDDQ decoupling per datasheet recommendations to maintain signal integrity at 300 MHz.
CY7C1513KV18-300BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1513KV18-300BZXC FAQ
1.How can I place an order for CY7C1513KV18-300BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1513KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1513KV18-300BZXC reliable?
The price and inventory of CY7C1513KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1513KV18-300BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1513KV18-300BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1513KV18-300BZXC transactions.
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CY7C1513KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1513KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1513KV18-300BZXC?
For technical support, including CY7C1513KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1513KV18-300BZXC requirements.
6.How does Aetrix verify that CY7C1513KV18-300BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1513KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1513KV18-300BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1513KV18-300BZXC?
All CY7C1513KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1513KV18-300BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1513KV18-300BZXC part is unused and in its original packaging.
Return procedure for CY7C1513KV18-300BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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