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Infineon Technologies CY7C1514JV18-250BZXC

Part No.:
CY7C1514JV18-250BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1514JV18-250BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,483

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Product details

Overview

CY7C1514JV18-250BZXC from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 250 MHz maximum operating frequency, 1.8 V core supply (VDD), 1.4–1.8 V I/O supply (VDDQ), and 165-ball FBGA (15 × 17 × 1.4 mm) package. It implements separate read/write ports, DDR interfaces on both ports, and 2-word burst transfers - enabling high-bandwidth buffering in network packet processors and FPGA-based data path acceleration.

For engineers reviewing the CY7C1514JV18-250BZXC datasheet, CY7C1514JV18-250BZXC pinout, CY7C1514JV18-250BZXC application, or CY7C1514JV18-250BZXC equivalent, key selection criteria include its 1.5-cycle DLL-enabled read latency, echo clock (CQ/CQ) support for timing deskew, HSTL-compatible variable-drive outputs, JTAG 1149.1 test access, and synchronous self-timed write architecture.

Technical Context

This device is a synchronous pipelined SRAM using QDR II architecture: dual independent ports (read and write), multiplexed address bus latched on alternating edges of K/K clocks, and DDR data transfer on both ports at 500 Mbps per pin (250 MHz clock × 2). It supports DLL-on mode (1.5-cycle read latency) and DLL-off mode (1-cycle latency, QDR I timing up to 167 MHz).

Internal organization is two 1M × 36 arrays; address inputs A[19:0] (20 bits) select locations; BWS[3:0] enable byte-level write masking across four 9-bit groups; RPS/WPS control port activation synchronously on K rising edge; C/C clocks drive output registers while CQ/CQ provide deskew-referenced echo clocks aligned to C/C.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 configuration)
Max Clock Frequency 250 MHz - defines maximum sustained transaction rate; enables 500 MT/s per data pin
Read Latency 1.5 cycles (DLL enabled) or 1 cycle (DLL disabled via DOFF pin) - directly impacts pipeline depth in real-time data flow
VDD / VDDQ 1.8 V ±0.1 V core / 1.4–1.8 V I/O - requires dual-rail power delivery; VDDQ adjustable for HSTL termination matching
Burst Length 2 words per access - fixed 2-word sequential burst on every read/write; no programmable burst option
Interface Standard HSTL Class I - defines voltage thresholds, drive strength, and AC timing for signal integrity compliance
Package 165-ball FBGA (15 × 17 × 1.4 mm) - 0.8 mm ball pitch; requires controlled-impedance PCB layout with ZQ impedance calibration

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant (Pb-free).

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit parallel input sampled on rising edge of K/K; supports byte masking via BWS[3:0]
Q[35:0] Synchronous read data output 36-bit parallel output registered to C/C; tri-stated automatically when RPS deasserted
A[19:0] Multiplexed address input 20-bit address shared by read/write ports; latched on alternating K/K edges for pipelined access
RPS / WPS Port select controls Active-low synchronous enables; sampled on K rising edge; gate port activity and data validity
C / C Output data clock pair Differential clock for Q[35:0] register; used with CQ/CQ to compensate board flight time skew
CQ / CQ Echo clock outputs Free-running clocks synchronized to C/C; referenced by system controller for precise data capture
ZQ Impedance calibration input Connects to external resistor to ground to tune Q[35:0]/CQ/CQ output driver impedance to 0.2×RQ
DOFF DLL disable control Active-low pin; grounding forces QDR I mode (1-cycle latency, ≤167 MHz); pull-up required for normal operation

Key Features

Feature Design Value
Separate read/write ports Eliminates data bus turnaround overhead; enables concurrent read+write in same clock cycle
DDR interface on both ports Delivers 500 MT/s effective bandwidth per pin without increasing clock frequency beyond 250 MHz
Delay Lock Loop (DLL) Enables 1.5-cycle read latency with precise internal clock phase alignment for stable high-speed sampling
HSTL Class I variable-drive outputs Adjustable drive strength via VDDQ setting; supports impedance-matched routing on dense backplanes
JTAG 1149.1 test access port Enables boundary-scan testing and in-system debug without additional test fixtures

Applications

Network Packet Buffering FPGA-Based Data Acceleration

Use Scenario: Storing and forwarding variable-length Ethernet/SONET frames in line-rate switches and routers.

IC Role / Device Role / Timing Role: High-throughput, low-latency dual-port buffer between ingress parser and egress scheduler logic.

Use Value: 250 MHz DDR interface delivers 36 Gbps aggregate bandwidth (36 bits × 500 MT/s), sustaining full 100 GbE line rates with zero wait states.

Use Scenario: Offloading packet classification, encryption, or compression tasks from CPU to FPGA-accelerated datapath.

IC Role / Device Role / Timing Role: Shared memory resource accessed simultaneously by FPGA fabric read engine and write engine.

Use Value: Independent read/write ports eliminate arbitration delays; 1.5-cycle latency ensures deterministic timing closure in FPGA timing-constrained designs.

Telecom Baseband Processing High-Speed Test Equipment Memory

Use Scenario: Real-time buffering of IQ samples between ADC/DAC and DSP cores in 4G/5G radio units.

IC Role / Device Role / Timing Role: Synchronous, jitter-tolerant memory interface supporting deterministic sample throughput.

Use Value: CQ/CQ echo clocks allow controller to deskew multiple CY7C1514JV18 devices across a large PCB, maintaining <100 ps inter-device skew.

Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) pattern generators and digitizers.

IC Role / Device Role / Timing Role: Deep, low-latency acquisition memory interfaced to high-speed SERDES or parallel bus controllers.

Use Value: 72-Mbit capacity with 2-word burst enables 2M-sample capture at 500 MS/s; DLL-off mode provides 1-cycle latency for minimal trigger-to-capture delay.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150L10BG 36-Mbit (1M × 36), 100 MHz max, LVDS interface, 256-ball PBGA Lower bandwidth (200 MT/s), differential signaling, larger package - suited for legacy telecom systems with LVDS infrastructure Select when LVDS compatibility, lower power, or longer product lifecycle is prioritized over bandwidth
ISSI IS61WV102432BLL-15BLI 32-Mbit (1M × 32), 15 ns async access, 3.3 V CMOS, 119-ball BGA Asynchronous interface, no DDR or DLL, lower density - suitable for non-pipelined control-plane buffers Select only for cost-sensitive, non-real-time applications where QDR timing and bandwidth are unnecessary

Compared with IDT72T36150L10BG and IS61WV102432BLL-15BLI, CY7C1514JV18-250BZXC delivers 2× memory density and 2.5× bandwidth via DDR + QDR II architecture, but requires precise HSTL layout and DLL calibration - making it optimal for new high-speed data path designs, not drop-in replacements.

Availability

CY7C1514JV18-250BZXC is available at Aetrix Electronics and suitable for network switching, FPGA co-processing, telecom baseband, and high-speed test equipment requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for CY7C1514JV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

CY7C1514JV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-forwarding engines, FPGA accelerators, and real-time signal processing systems.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin disables the internal Delay Lock Loop when pulled LOW. In DLL-off mode, the device operates as a QDR I SRAM with 1-cycle read latency and reduced maximum frequency (≤167 MHz). When DOFF is HIGH (via 10 kΩ pull-up), DLL is active, enabling 1.5-cycle latency and full 250 MHz operation. Timing parameters differ significantly between modes - both sets are fully specified in the datasheet.

How are the BWS[3:0] pins used for write masking in the 2M × 36 configuration?

BWS[3:0] are active-LOW byte write selects that mask corresponding 9-bit groups of D[35:0]: BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. During a write, only bytes with asserted (LOW) BWS signals are updated; unmasked bytes retain prior values. All BWS pins are sampled synchronously on the rising edge of K/K.

Can C and C be used as single-ended clocks, or must they always be differential?

C and C are complementary clock inputs intended for differential operation to minimize skew and jitter. While the device accepts single-ended C with C tied to VSS or VDDQ, this violates HSTL timing specifications and degrades setup/hold margins. For guaranteed 250 MHz operation, differential C/C routing with matched trace lengths and proper termination is mandatory per the datasheet layout guidelines.

What is the role of the ZQ pin, and how should it be connected?

ZQ calibrates output driver impedance for Q[35:0] and CQ/CQ pins. It must be connected to a precision resistor (RQ) between ZQ and GND; output impedance is set to 0.2 × RQ. Alternatively, ZQ may be tied directly to VDDQ to enable minimum-impedance mode (≈20 Ω). ZQ must never be left floating or connected to GND - doing so causes undefined output drive strength and signal integrity failure.

CY7C1514JV18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1514JV18-250BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1514JV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1514JV18-250BZXC reliable?

The price and inventory of CY7C1514JV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514JV18-250BZXC is usually 5 days.

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CY7C1514JV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1514JV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1514JV18-250BZXC?

For technical support, including CY7C1514JV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514JV18-250BZXC requirements.

6.How does Aetrix verify that CY7C1514JV18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1514JV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514JV18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1514JV18-250BZXC?

All CY7C1514JV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514JV18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1514JV18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1514JV18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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