Infineon Technologies CY7C1514KV18-200BZXC

Overview

CY7C1514KV18 from Cypress Semiconductor is a 2M × 36-bit (72-Mbit), 1.8V QDR® II SRAM with dual DDR interfaces, 350 MHz clock support (700 MT/s data rate), 1.5-cycle read latency (DOFF = HIGH), and synchronous self-timed writes - deployed in high-bandwidth packet buffering for network line cards.

For engineers reviewing the CY7C1514KV18 datasheet, CY7C1514KV18 pinout, CY7C1514KV18 application, or CY7C1514KV18 equivalent, key selection criteria include burst depth (2-word), I/O voltage compatibility (VDDQ = 1.4–1.8 V), FBGA-165 package footprint, and QDR II-specific timing controls (K/K, C/C, CQ/CQ, DOFF).

Technical Context

This SRAM implements true dual-port architecture with physically separate read and write data paths, eliminating bus turnaround overhead. It uses two independent input clocks (K and K) for address/data capture and two output clocks (C and C) plus echo clocks (CQ and CQ) to manage skew across 36-bit wide DDR buses at 350 MHz.

The device supports programmable impedance via ZQ pin, JTAG 1149.1 boundary scan, and configurable read latency (1-cycle with DOFF = LOW, 1.5-cycle with DOFF = HIGH). All operations are fully synchronous, with address latching on alternating edges of K clock and internal pipelined access.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with IDT72T3652 and IS61WV102436B, CY7C1514KV18 offers optimal balance of 350 MHz performance, echo-clock–assisted timing margin, and ZQ-calibrated HSTL drive - making it ideal for field-upgradable telecom hardware requiring proven reliability and layout flexibility.

Availability

CY7C1514KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and avionics data acquisition requiring stable component supply across extended product lifecycles.

Supply support for CY7C1514KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

CY7C1514KV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic, low-latency, dual-port buffering in multi-gigabit serial data infrastructure where bus turnaround overhead must be eliminated.

FAQ

What is the function of the DOFF pin on CY7C1514KV18?

The DOFF (Data Output OFFset) pin selects read latency mode: when HIGH, it enables 1.5-cycle latency for improved timing margin at 350 MHz; when LOW, it enables 1-cycle latency for minimum delay in streaming applications. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.

How does the ZQ pin operate for impedance calibration?

The ZQ pin connects to an external 240 Ω resistor to ground and initiates on-die calibration of HSTL output driver strength. Calibration occurs automatically at power-up and can be triggered manually via JTAG. It compensates for process, voltage, and temperature variations to maintain ±15% output impedance accuracy - critical for signal integrity at 700 MT/s.

Can CY7C1514KV18 operate with only one clock domain (K-only)?

Yes - CY7C1514KV18 supports single-clock-domain operation where K and K are tied together, and C and C are tied together. In this mode, the device functions as a standard QDR II part with simplified clock routing, though maximum frequency may be limited by combined clock skew; full dual-clock operation is required to achieve guaranteed 350 MHz performance.

What is the purpose of BWS[3:0] signals in write operations?

BWS[3:0] are active-LOW byte write select signals that mask individual 8-bit segments of the 36-bit D[35:0] bus during writes. When a BWS bit is deasserted (HIGH), the corresponding byte remains unaltered in memory - enabling efficient partial-word updates without read-modify-write sequences, essential for protocol header manipulation in networking applications.