Infineon Technologies CY7C1514KV18-250BZI
- Part No.:
- CY7C1514KV18-250BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1514KV18-250BZI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,855
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1514KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 1.8V core supply, and dual DDR interfaces supporting 350 MHz clock (700 Mbps data rate per port). It features separate read/write ports, 1.5-cycle read latency (DOFF = HIGH), echo clocks (CQ/CQ), and PLL-based timing control for high-bandwidth networking buffers in packet forwarding engines.
For engineers reviewing the CY7C1514KV18 datasheet, CY7C1514KV18 pinout, CY7C1514KV18 application, or CY7C1514KV18 equivalent, key selection criteria include burst depth (2-word), x36 bus width, FBGA-165 package compatibility, HSTL-15/18 I/O support, and concurrent read/write transaction capability in telecom line cards.
Technical Context
The CY7C1514KV18 implements true QDR II architecture with physically independent read and write data paths-no bus turnaround required. Its dual-clock domain uses K/K for address/data capture and C/C (or CQ/CQ) for output timing, enabling precise DDR edge alignment and skew mitigation in 10G+ systems.
Internally, it employs synchronous self-timed writes, programmable impedance termination (ZQ), JTAG 1149.1 boundary scan, and a PLL that locks to K input to generate internal timing for 1.5-cycle read latency. Address latching occurs on alternating rising edges of K, supporting full-depth expansion via four BWS signals (BWS[3:0]).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 72 Mbit (2M × 36 bits); supports 72-bit parallel data path per access |
| Max Clock Frequency | 250 MHz (K/K input); enables 500 MT/s effective throughput per port |
| Data Rate | 500 Mbps per port (DDR at 250 MHz); total bidirectional bandwidth = 1 Gbps |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW); determines pipeline depth in switch fabric |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O); supports mixed 1.5V/1.8V system interfacing |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm); RoHS-compliant, thermal resistance θJA = 24°C/W |
| Burst Length | Fixed 2-word burst; delivers two 36-bit words per address access, optimizing cache-line fill efficiency |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, JEDEC MO-270AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | 36-bit parallel data sampled on rising edge of K/K; supports full-width or byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data outputs | 36-bit DDR outputs registered to C/C or CQ/CQ; eliminates external latch requirement in SerDes interface |
| K, K | Primary input clocks | Rising-edge-triggered clocks for address/data capture; K used for read address, K for write address |
| C, C | Output data clocks | Source-synchronous clocks for Q[35:0]; minimize flight time mismatch vs. data in high-speed PCB routing |
| CQ, CQ | Echo clocks | Delayed copies of C/C; simplify capture timing in FPGA receivers by aligning with data eye center |
| BWS[3:0] | Byte write select inputs | Four active-low signals enabling independent 8-bit write masking across 36-bit bus; critical for partial updates in buffer management |
| DOFF | Read latency mode control | Active-HIGH selects 1.5-cycle latency; LOW selects 1-cycle latency-configures pipeline depth for system timing closure |
| ZQ | Impedance calibration reference | Connects to 240Ω ±1% external resistor to ground; enables on-die termination calibration for HSTL I/O |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Enables true concurrent transactions-no bus arbitration or turnaround delay in full-duplex packet buffering |
| 2-word burst + DDR interface | Delivers 72 bits per clock cycle per port; doubles effective bandwidth over single-data-rate SRAMs |
| Programmable output drive strength | HSTL-compatible variable drive buffers reduce signal integrity issues on long traces in backplane applications |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant test access for interconnect verification in dense BGA layouts without physical probe points |
| PLL-based internal timing generator | Locks to K input to produce phase-aligned internal clocks-eliminates need for external clock synthesizers in timing-critical designs |
Applications
| High-Speed Packet Buffering | Network Processor Interface |
|---|---|
Use Scenario: Line-rate buffering in 10 Gigabit Ethernet switch ASICs handling variable-length IP packets. IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with zero-turnaround concurrent access. Use Value: 2M × 36 capacity and 500 MT/s per port sustain 10 Gbps full-duplex traffic with sub-10ns read/write latency. | Use Scenario: Shared memory between multi-core network processors and traffic manager units in carrier-grade routers. IC Role / Device Role / Timing Role: Coherent memory resource accessed simultaneously by CPU and hardware scheduler via dedicated ports. Use Value: Full data coherency and 1.5-cycle latency ensure deterministic packet scheduling with no stale data reads. |
| Telecom Line Card Memory | Optical Transport Network (OTN) Framer Buffer |
Use Scenario: Payload storage in SONET/SDH add-drop multiplexers requiring burst-mode access to STS-192 frames. IC Role / Device Role / Timing Role: High-reliability SRAM with ECC-capable interface (via external logic) storing frame headers and overhead bytes. Use Value: 165-ball FBGA package meets IPC-7351B footprint standards for thermal management in air-cooled line cards. | Use Scenario: Mapping and demapping of OTU2/OTU3 payloads in DWDM transponders with strict jitter tolerance. IC Role / Device Role / Timing Role: Timing-critical buffer synchronized to OTN reference clock using CQ echo clock alignment. Use Value: Echo clocks (CQ/CQ) reduce setup/hold margin requirements by >150 ps, enabling reliable capture at 250 MHz DDR. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-bit QDR II+ (1000 Mbps per port), 250 MHz max, 1.5V core, 165-BGA | Higher bandwidth but requires 1.5V core; lacks ZQ calibration and DOFF latency toggle | Select when higher throughput justifies tighter voltage margin and simplified calibration flow |
| ISSI IS61WV102436B | 2M × 36 sync SRAM, 166 MHz, single-cycle latency, 3.3V/2.5V I/O, 119-TQFP | No DDR, no echo clocks, slower speed, larger package; lower cost for non-real-time buffering | Select only for legacy designs where QDR II features are unnecessary and board space allows TQFP |
Compared with IDT72T3615L10BG and IS61WV102436B, the CY7C1514KV18 uniquely balances 250 MHz QDR II performance, flexible 1.4–1.8V I/O, ZQ calibration, and DOFF-configurable latency-making it optimal for new telecom and networking designs requiring timing precision and power scalability.
Availability
CY7C1514KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfacing, and telecom line card memory requiring stable component supply across extended product lifecycles.
Supply support for CY7C1514KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial and communications infrastructure.
The QDR II SRAM product line-including CY7C1514KV18-is designed specifically for ultra-low-latency, high-throughput memory subsystems in networking equipment, baseband processing, and real-time signal buffering applications.
FAQ
What is the function of the DOFF pin on CY7C1514KV18?
The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin in high-speed systems; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting directly affects the number of clock cycles between address assertion and valid Q[35:0] output, and must be set before initialization.
Does CY7C1514KV18 support JTAG boundary scan testing?
Yes, CY7C1514KV18 fully complies with IEEE 1149.1 (JTAG) standard. It includes TDI, TDO, TCK, and TMS pins, plus an internal boundary scan register supporting interconnect testing of all 165 balls. The JTAG feature can be disabled via configuration fuse if unused, reducing test pin count in production.
How does the ZQ pin operate for impedance calibration?
The ZQ pin connects to a 240Ω ±1% external resistor to ground. During calibration, the device measures this reference to adjust its internal HSTL output driver impedance, ensuring matched termination across all D[35:0] and Q[35:0] pins. Calibration occurs automatically at power-up and can be retriggered via JTAG command.
Can CY7C1514KV18 operate with different supply voltages on VDD and VDDQ?
Yes-VDD must be 1.8V ±0.1V for core logic, while VDDQ may range from 1.4V to 1.8V to match interfacing devices (e.g., 1.5V FPGA I/O banks). This dual-supply flexibility allows seamless integration into mixed-voltage systems without level shifters, provided VDDQ ≥ VDD − 0.3V per datasheet limits.
CY7C1514KV18-250BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1514KV18-250BZI FAQ
1.How can I place an order for CY7C1514KV18-250BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1514KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1514KV18-250BZI reliable?
The price and inventory of CY7C1514KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514KV18-250BZI is usually 5 days.
3.What payment methods are accepted for CY7C1514KV18-250BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1514KV18-250BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1514KV18-250BZI?
CY7C1514KV18-250BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1514KV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1514KV18-250BZI?
For technical support, including CY7C1514KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514KV18-250BZI requirements.
6.How does Aetrix verify that CY7C1514KV18-250BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1514KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514KV18-250BZI meets industry standards.
7.What is the process for return or replacement of CY7C1514KV18-250BZI?
All CY7C1514KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514KV18-250BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1514KV18-250BZI part is unused and in its original packaging.
Return procedure for CY7C1514KV18-250BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1514KV18-250BZI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

