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Infineon Technologies CY7C1514KV18-250BZXI

Part No.:
CY7C1514KV18-250BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1514KV18-250BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,574

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Product details

Overview

CY7C1514KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 1.8V core supply, and 1.4–1.8V I/O supply, supporting 250 MHz operation (40 ns clock period), double data rate interfaces on both read/write ports, and 2-word burst architecture for high-throughput networking buffers in packet switching ASICs.

For engineers reviewing the CY7C1514KV18 datasheet, CY7C1514KV18 pinout, CY7C1514KV18 application, or CY7C1514KV18 equivalent, key selection criteria include its 2M × 36 x18/x36 depth-expansion capability, echo clock (CQ/CQ) support for timing margin recovery, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and HSTL-compatible variable-drive outputs for 700 Mbps DDR signaling.

Technical Context

This QDR II SRAM implements fully independent synchronous read and write ports sharing a multiplexed address bus, with all inputs registered on rising edges of K/K clocks and outputs registered on C/C clocks - enabling true concurrent access without bus turnaround. Its internal PLL ensures precise data placement relative to echo clocks, critical for >350 MHz system timing closure.

The device supports byte-write select (BWS[3:0]) for granular 8-bit writes across its 36-bit data width, and uses separate port selects (WPS/RPS) to enable depth expansion across multiple devices. DOFF pin configures read latency between 1 cycle (QDR I compatibility) and 1.5 cycles (QDR II optimized mode), directly affecting pipeline depth in high-speed memory controllers.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36 configuration)
Max Clock Frequency250 MHz (40 ns period); enables 700 Mbps DDR data transfer per port
Read LatencyConfigurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH)
Core SupplyVDD = 1.8 V ± 0.1 V; defines minimum power rail stability requirement
I/O Supply RangeVDDQ = 1.4 V to 1.8 V; supports interoperability with 1.5V or 1.8V logic families
Burst LengthFixed 2-word burst per access; eliminates variable-latency burst control logic
Package165-ball FBGA (13 mm × 15 mm × 1.4 mm); standard footprint for high-pin-count memory

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data input36-bit parallel input sampled on rising edge of K/K; full-width write path for burst transfers
Q[35:0]Synchronous read data output36-bit DDR output registered on C/C clocks; supports echo-clock–based capture
WPSWrite port selectActive-low signal enabling write operations; deassertion blocks D[35:0] latching
RPSRead port selectActive-low signal enabling read operations; deassertion forces Q[35:0] to high-impedance
BWS[3:0]Byte write selectFour independent active-low signals controlling 8-bit segments of D[35:0]; enables partial writes without read-modify-write
CQ / CQEcho clock outputsSource-synchronous clocks aligned with Q[35:0] edges; simplify high-speed data capture at receiver
K / KInput clock pairDual-phase clock inputs driving all synchronous inputs; only rising edges used for registration
C / COutput clock pairDual-phase clocks driving Q[35:0] and CQ/CQ outputs; minimize skew vs. data paths
DOFFRead latency mode controlHigh = 1.5-cycle latency (QDR II mode); Low = 1-cycle latency (QDR I compatibility)
VDDQI/O power supplySeparate 1.4–1.8 V rail for D/Q pins; decoupling required per JEDEC HSTL-18 specs

Key Features

FeatureDesign Value
Independent read/write portsEliminates bus turnaround overhead; enables simultaneous 700 Mbps read + 700 Mbps write throughput
2-word burst architectureFixed-length burst reduces address sequencing logic and simplifies controller design
Echo clock (CQ/CQ) supportEnables source-synchronous data capture at 700 Mbps without complex deskew circuitry
Configurable read latency (DOFF)Allows migration from QDR I designs (1-cycle) or optimization for QDR II pipelines (1.5-cycle)
Byte-write select (BWS[3:0])Permits 8-bit granularity writes across 36-bit bus without requiring external read-modify-write cycles

Applications

Packet Buffer MemoryNetwork Processor Cache

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet line cards.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level buffering between MAC and switch fabric, using concurrent reads/writes to sustain 10 Gbps+ throughput.

Use Value: 2M × 36 width matches typical 128-bit or 256-bit bus widths in network processors; 250 MHz DDR interface delivers 17.6 GB/s aggregate bandwidth.

Use Scenario: Holding forwarding tables and flow state in programmable network processors (e.g., Intel IXP, Broadcom XLP).

IC Role / Device Role / Timing Role: Low-latency cache for TCAM lookups and packet metadata; accessed via dedicated read/write ports to avoid contention.

Use Value: 1.5-cycle read latency (DOFF = HIGH) minimizes pipeline stalls; echo clocks ensure reliable capture at 700 Mbps DDR rates.

Telecom Line Card BufferHigh-Speed Test Equipment Memory

Use Scenario: Buffering ATM or SONET cell streams in OC-192/STM-64 transport equipment.

IC Role / Device Role / Timing Role: Synchronous dual-port memory interfacing with framer and backplane controller ASICs using HSTL I/O.

Use Value: VDDQ range (1.4–1.8 V) allows direct connection to 1.5V framer I/O; 165-ball FBGA fits dense telecom PCB layouts.

Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: High-bandwidth acquisition buffer feeding FPGA-based analysis engines; configured for burst-mode streaming.

Use Value: 2-word burst and DDR I/O eliminate gaps between sample bursts; BWS[3:0] enables selective update of test vector subsets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615036-bit QDR II+ SRAM, 333 MHz max, 1.5V core, no DOFF latency selectHigher frequency but fixed 1-cycle latency; requires redesign of read-pipeline logicSelect if system demands >250 MHz operation and can accommodate fixed latency
ISSI IS61WV102436BAsynchronous 1M × 36 SRAM, 15 ns access, single-port, 3.3V onlyNo DDR, no echo clocks, no concurrent access; ~1/10th bandwidth of CY7C1514KV18Select only for cost-sensitive, low-speed control-plane buffering where QDR features are unused

Compared with IDT72T36150 and IS61WV102436B, CY7C1514KV18 uniquely balances 250 MHz DDR performance, configurable latency, and echo-clock timing margin - making it optimal for upgrade paths from QDR I or new designs targeting 10 Gbps-class packet processing.

Availability

CY7C1514KV18 is available at Aetrix Electronics and suitable for packet switching buffers, network processor caches, telecom line card memory, and high-speed test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1514KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1514KV18 belongs to Cypress's QDR II SRAM product line, designed specifically for high-bandwidth, low-latency buffering in networking and telecommunications infrastructure where deterministic DDR timing and concurrent access are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1514KV18?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency (QDR II mode), optimizing bandwidth efficiency; when LOW, it reverts to 1-cycle latency (QDR I compatibility). This setting directly affects memory controller pipeline depth and must be held stable during operation.

Can CY7C1514KV18 operate with only one clock domain (K and C tied together)?

Yes - the device supports single-clock-domain operation by tying K to C and K to C, as documented in the "Single Clock Mode" section of the datasheet. In this mode, output registers are clocked by the same edges that latch inputs, reducing clock routing complexity at the cost of slightly reduced timing margin compared to dual-clock operation.

How does the BWS[3:0] signal differ from NWS[1:0] in CY7C1514KV18?

BWS[3:0] provides four independent byte-write enables for the 36-bit data bus (each controlling 8 bits), while NWS[1:0] - present only in x8/x9 variants - controls nibble-level (4-bit) writes. CY7C1514KV18 uses BWS exclusively; NWS signals are not implemented and must remain unconnected or tied inactive.

Is the 165-ball FBGA package of CY7C1514KV18 compatible with standard reflow profiles?

Yes - the 165-ball FBGA (13 × 15 × 1.4 mm) follows JEDEC MO-270AB standards and is qualified for lead-free reflow per IPC/JEDEC J-STD-020. Peak temperature must not exceed 260°C for ≤60 seconds, and thermal profile must maintain ramp rates within ±3°C/sec to prevent solder voiding or die cracking.

CY7C1514KV18-250BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1514KV18-250BZXI FAQ

1.How can I place an order for CY7C1514KV18-250BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1514KV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1514KV18-250BZXI reliable?

The price and inventory of CY7C1514KV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514KV18-250BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1514KV18-250BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1514KV18-250BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1514KV18-250BZXI?

CY7C1514KV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1514KV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1514KV18-250BZXI?

For technical support, including CY7C1514KV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514KV18-250BZXI requirements.

6.How does Aetrix verify that CY7C1514KV18-250BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1514KV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514KV18-250BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1514KV18-250BZXI?

All CY7C1514KV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514KV18-250BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1514KV18-250BZXI part is unused and in its original packaging.

Return procedure for CY7C1514KV18-250BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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