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Infineon Technologies CY7C1514KV18-300BZC

Part No.:
CY7C1514KV18-300BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1514KV18-300BZC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,492

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Product details

Overview

CY7C1514KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 300 MHz clock frequency, 1.8V core supply, and 1.4–1.8V I/O supply. It features separate read/write ports, DDR interfaces on both ports (700 Mbps effective data rate), and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.

For engineers reviewing the CY7C1514KV18 datasheet, CY7C1514KV18 pinout, CY7C1514KV18 application, or CY7C1514KV18 equivalent, key selection criteria include burst depth (2-word), read latency (1 or 1.5 cycles depending on DOFF), FBGA-165 package compatibility, and HSTL-18 I/O compliance for backplane and switch fabric designs.

Technical Context

This device implements synchronous pipelined QDR II architecture with independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K/K clocks, enabling concurrent access without bus turnaround.

It integrates a PLL for precise data placement, supports programmable impedance via ZQ pin, and includes IEEE 1149.1 JTAG boundary scan. Write operations are self-timed and synchronized to K/K, while output data is registered to C/C clocks - with optional echo clocks (CQ/CQ) for source-synchronous capture at 300 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 bits)
Max Clock Frequency 300 MHz - enables 600 MT/s throughput per port
Data Rate 700 Mbps per port (DDR interface on K/K and C/C)
Read Latency 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH)
Supply Voltages VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports mixed-voltage system interfacing
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density routing
I/O Standard HSTL Class I (1.8V) - ensures signal integrity at 300 MHz with controlled drive strength

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous data input 36-bit wide write data bus, sampled on rising edge of K/K clocks
Q[35:0] Synchronous data output 36-bit wide read data bus, registered to C/C clocks with echo-clock support
WPS Write port select Active-low enable for write transactions; deassertion blocks all write data acceptance
BWS[3:0] Byte write select Four independent active-low signals controlling 8-bit byte masking during writes
K, K Input clocks Dual-phase clock pair for address/data sampling; only rising edges used for synchronization
C, C Output clocks Separate clock pair for output register timing; minimizes skew vs. Q outputs
CQ, CQ Echo clocks Source-synchronous clocks aligned with Q[35:0] outputs to simplify high-speed capture
DOFF Read latency control Configures read latency: LOW = 1-cycle, HIGH = 1.5-cycle for timing margin optimization
ZQ Impedance calibration Connects to external 240 Ω resistor for on-die termination calibration of HSTL outputs

Key Features

Feature Design Value
Independent read/write ports Enables true concurrent read and write operations without arbitration or bus turnaround delay
2-word burst architecture Guarantees two sequential 36-bit words per access, optimizing bandwidth for packet payloads
Programmable output drive HSTL-18 buffers with ZQ-calibrated impedance ensure consistent signal integrity across voltage/temperature
JTAG 1149.1 boundary scan Supports automated PCB test and interconnect verification in high-pin-count systems
Self-timed writes On-chip write timing control eliminates external write pulse width constraints and simplifies controller design

Applications

Network Packet Buffering Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory for parallel header lookup and payload queuing.

Use Value: 700 Mbps per port DDR interface sustains full line-rate 10G Ethernet traffic with zero bus contention.

Use Scenario: Interconnecting crossbar scheduler and egress queues in modular chassis switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as distributed buffer between scheduling logic and output ports.

Use Value: Independent read/write ports allow simultaneous enqueue/dequeue operations at 300 MHz clock rate.

Telecom Line Card Memory High-Speed Test Equipment Buffer

Use Scenario: Frame assembly/disassembly in SONET/SDH OC-192 line cards.

IC Role / Device Role / Timing Role: Burst-mode memory staging area for ATM cell reassembly and jitter buffering.

Use Value: 2-word burst + echo clocks (CQ/CQ) enable deterministic 1.5-cycle read latency for jitter-critical timing paths.

Use Scenario: Capturing high-speed digital waveforms in ATE systems with >500 MHz sampling.

IC Role / Device Role / Timing Role: Synchronous acquisition buffer synchronized to pattern generator clocks.

Use Value: HSTL I/O and ZQ calibration maintain signal fidelity across temperature for repeatable measurement accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L5 36-bit, 2M × 36, 250 MHz max clock, LVDS I/O, no echo clocks Lacks CQ/CQ; requires external clock forwarding; higher power at same frequency Prefer when LVDS signaling and lower EMI are prioritized over maximum bandwidth density
ISSI IS61WV204836B 36-bit, 2M × 36, 167 MHz max clock, single-ended LVTTL I/O, no DDR No DDR interface; 1-cycle latency only; no burst mode; significantly lower bandwidth Select only for cost-sensitive, non-real-time buffering where 300 MHz timing is unnecessary

Compared with IDT72T3615L5 and IS61WV204836B, CY7C1514KV18 delivers 20% higher clock rate and integrated echo clocks for simplified high-speed capture - critical for 10G+ switch fabric and telecom line card designs requiring deterministic latency.

Availability

CY7C1514KV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, and telecom line card memory requiring stable component supply across multi-year production cycles.

Supply support for CY7C1514KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C1514KV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory access in packet-switched infrastructure and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1514KV18?

The DOFF (Data Output OFFset) pin configures read latency: when asserted LOW, it enables 1-cycle read latency; when HIGH, it selects 1.5-cycle latency. This allows designers to trade off timing margin against throughput in systems with tight setup/hold windows at the receiver.

Can CY7C1514KV18 operate with only one clock domain (K-only)?

Yes - CY7C1514KV18 supports single-clock mode where both K and K inputs are tied together, and C and C are also tied. In this configuration, the device behaves like a standard QDR I part with 1-cycle latency, but loses the skew-mitigation benefit of dual clock domains.

How does the ZQ pin calibrate output drive strength?

The ZQ pin connects to an external 240 Ω resistor to ground. During calibration, internal circuitry measures the reference resistance and adjusts pull-up/pull-down transistor sizes to match HSTL-18 output impedance (typically 25 Ω), ensuring consistent signal integrity across voltage and temperature variations.

Is CY7C1514KV18 pin-compatible with other devices in the CY7C15xxKV18 family?

No - while all share the 165-ball FBGA package, pin assignments differ across configurations (x8/x9/x18/x36). For example, BWS[3:0] in CY7C1514KV18 replaces NWS[1:0] and RPS/WPS functions found in x8/x9 variants, making direct substitution impossible without PCB redesign.

CY7C1514KV18-300BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1514KV18-300BZC FAQ

1.How can I place an order for CY7C1514KV18-300BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1514KV18-300BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1514KV18-300BZC reliable?

The price and inventory of CY7C1514KV18-300BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514KV18-300BZC is usually 5 days.

3.What payment methods are accepted for CY7C1514KV18-300BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1514KV18-300BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1514KV18-300BZC?

CY7C1514KV18-300BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1514KV18-300BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1514KV18-300BZC?

For technical support, including CY7C1514KV18-300BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514KV18-300BZC requirements.

6.How does Aetrix verify that CY7C1514KV18-300BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1514KV18-300BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514KV18-300BZC meets industry standards.

7.What is the process for return or replacement of CY7C1514KV18-300BZC?

All CY7C1514KV18-300BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514KV18-300BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1514KV18-300BZC part is unused and in its original packaging.

Return procedure for CY7C1514KV18-300BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1514KV18-300BZC Tags

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