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Infineon Technologies CY7C1514KV18-300BZI

Part No.:
CY7C1514KV18-300BZI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1514KV18-300BZI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,331

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Product details

Overview

CY7C1514KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 300 MHz clock operation (700 Mbps DDR data rate), 1.8V core supply, and 1.4–1.8V I/O supply. It implements separate read/write ports with echo clocks (CQ/CQ), DOFF-controlled 1.5-cycle or 1-cycle read latency, and synchronous self-timed writes - deployed in high-bandwidth packet buffering for network switches.

For engineers reviewing the CY7C1514KV18 datasheet, CY7C1514KV18 pinout, CY7C1514KV18 application, or CY7C1514KV18 equivalent, key selection criteria include burst depth (2-word), port independence, HSTL-18 I/O compatibility, FBGA-165 package footprint, and QDR II timing compliance for deterministic low-latency memory access in telecom infrastructure.

Technical Context

The CY7C1514KV18 uses dual independent DDR interfaces: read data transfers on rising edges of C/C clocks with echo-clock (CQ) alignment, while write data is sampled on K/K rising edges. Address latching occurs on alternating K-clock edges for shared address bus operation across both ports.

Its internal PLL ensures precise data placement relative to echo clocks, and the DOFF pin selects between 1.5-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW) read latency modes - maintaining full data coherency without bus turnaround overhead.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36 bits)
Max Clock Frequency300 MHz - supports 700 Mbps DDR bandwidth per port
Read LatencySelectable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH)
Core Supply Voltage1.8 V ±0.1 V - defines minimum power rail stability requirement
I/O Supply Range1.4 V to 1.8 V - enables interoperability with 1.5V or 1.8V HSTL-18 systems
Burst Length2-word fixed burst - delivers two consecutive 36-bit words per access
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data input36-bit parallel data sampled on K/K rising edges; supports byte-selectable writes via BWS[3:0]
Q[35:0]Synchronous read data output36-bit parallel output registered to C/C clocks; aligned with echo clock CQ for timing margin
K, KWrite/read address & data clock inputsDual-phase input clocks - rising edges latch addresses and sample write data; K used for read address, K for write address
C, CRead data output clocksOutput registers driven by C/C; determines timing of Q[35:0] valid window relative to echo clock
CQ, CQEcho clocksOutput-delayed copies of C/C - simplify source-synchronous capture at controller side
WPSWrite port selectActive-low signal enabling write transactions; deassertion disables write port and ignores D[35:0]
BWS[3:0]Byte write selectsFour independent active-low signals controlling 8-bit segments of D[35:0]; unselected bytes retain prior values
DOFFRead latency mode controlHIGH → 1.5-cycle latency; LOW → 1-cycle latency - configures internal pipeline depth
VDD, VDDQ, VSSPower/ground railsVDD = 1.8V core; VDDQ = 1.4–1.8V I/O; separate supplies enable noise isolation between logic and interface
ZQImpedance calibration referenceConnects to external 240Ω resistor to ground for programmable HSTL output driver impedance tuning

Key Features

FeatureDesign Value
Independent read/write portsEnables concurrent read and write operations without arbitration delay or bus contention
2-word burst architectureGuarantees two sequential 36-bit words delivered per access - eliminates per-word address overhead
Echo clock (CQ/CQ) supportProvides deterministic skew-matched timing reference for reliable high-speed data capture at 700 Mbps
Programmable read latency (DOFF)Allows system-level trade-off between latency and timing closure: 1-cycle for minimal delay, 1.5-cycle for improved setup/hold margin
HSTL-18 compatible I/OEnsures signal integrity and voltage compatibility with FPGA/ASIC memory controllers using 1.5V or 1.8V HSTL standards

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet or OTN line cards where deterministic latency and zero bus turnaround are required.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking first-in-first-out (FIFO) buffer with simultaneous read/write capability and echo-clock-aligned data capture.

Use Value: Enables 700 Mbps sustained throughput per port with 1-cycle read latency, eliminating serialization bottlenecks in 10G+ switch fabric designs.

Use Scenario: Serving as frame buffer memory in carrier-grade SDH/SONET add-drop multiplexers requiring jitter-free, coherent data access across multiple processing engines.

IC Role / Device Role / Timing Role: High-reliability QDR II SRAM providing synchronized read/write access to time-critical control and payload data under strict jitter budgets.

Use Value: Full data coherency and self-timed writes ensure no stale reads during concurrent updates - critical for real-time traffic shaping and OAM&P functions.

Baseband Processing CacheRadar Signal Processing Buffer

Use Scenario: Acting as L2 cache for LTE/5G baseband processors handling uplink/downlink channel estimation and precoding matrices.

IC Role / Device Role / Timing Role: Low-latency memory subsystem interfacing directly with DSP cores via HSTL-18 buses, leveraging DOFF to balance latency vs. timing margin.

Use Value: 2M × 36 configuration matches typical FFT/IFFT word widths; 300 MHz clock supports >2 Gbps aggregate bandwidth needed for massive MIMO processing.

Use Scenario: Capturing and staging high-resolution pulse-Doppler radar returns before FFT processing in airborne or ground-based radar systems.

IC Role / Device Role / Timing Role: Burst-mode acquisition buffer synchronizing ADC samples to echo clocks for precise phase-coherent storage and retrieval.

Use Value: 2-word burst and echo-clock alignment reduce timing uncertainty to <100 ps - essential for sub-centimeter range resolution in SAR imaging.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C362000B-300BIN3.3V core, 2M × 36, 300 MHz, no echo clocks or DOFF latency controlLacks QDR II timing features; requires external clock forwarding and manual latency managementPrefer when legacy 3.3V systems exist and echo-clock simplification is not required
IS61WV204836BLL-300TQLI3.3V/2.5V core, 2M × 36, 300 MHz, single-ended LVCMOS I/O, no DDR or echo clocksLower bandwidth density; no concurrent read/write - unsuitable for true QDR use casesOnly consider for cost-sensitive, non-concurrent applications where QDR II features are unused

Compared with AS7C362000B-300BIN and IS61WV204836BLL-300TQLI, the CY7C1514KV18 uniquely delivers true QDR II functionality - including echo clocks, selectable read latency, and DDR interfaces - making it irreplaceable in systems demanding guaranteed concurrent access and source-synchronous timing at 700 Mbps.

Availability

CY7C1514KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and radar signal processing buffer applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1514KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1514KV18 belongs to Cypress's QDR® II SRAM product line, engineered specifically for deterministic, high-bandwidth memory access in networking and telecom infrastructure where bus turnaround elimination and sub-nanosecond timing predictability are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1514KV18?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin; when LOW, it configures 1-cycle latency for minimal access delay. This setting affects internal pipeline depth but does not alter burst length, clock frequency, or data width.

Can CY7C1514KV18 operate with only one clock domain (K = C)?

Yes - the device supports single-clock-domain operation where K and C are tied together, and K and C are tied together. In this mode, all registers (address, data input, data output) are clocked from the same edge-aligned sources, simplifying board layout at the expense of maximum achievable bandwidth and skew tolerance.

How many byte-write enable signals does CY7C1514KV18 support, and what do they control?

CY7C1514KV18 supports four byte-write select signals: BWS0 through BWS3. Each controls an 8-bit segment of the 36-bit D[35:0] bus - BWS0 for D[7:0], BWS1 for D[15:8], BWS2 for D[23:16], and BWS3 for D[31:24]. D[35:32] are unmasked and always written when WPS is active.

Is the ZQ pin required for normal operation of CY7C1514KV18?

Yes - the ZQ pin must be connected to a 240Ω resistor to ground for on-die impedance calibration of HSTL-18 output drivers. Without this connection, output drive strength varies unpredictably, risking signal integrity violations at 700 Mbps DDR rates and failing HSTL compliance.

CY7C1514KV18-300BZI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1514KV18-300BZI FAQ

1.How can I place an order for CY7C1514KV18-300BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1514KV18-300BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1514KV18-300BZI reliable?

The price and inventory of CY7C1514KV18-300BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514KV18-300BZI is usually 5 days.

3.What payment methods are accepted for CY7C1514KV18-300BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1514KV18-300BZI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1514KV18-300BZI?

CY7C1514KV18-300BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1514KV18-300BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1514KV18-300BZI?

For technical support, including CY7C1514KV18-300BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514KV18-300BZI requirements.

6.How does Aetrix verify that CY7C1514KV18-300BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1514KV18-300BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514KV18-300BZI meets industry standards.

7.What is the process for return or replacement of CY7C1514KV18-300BZI?

All CY7C1514KV18-300BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514KV18-300BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1514KV18-300BZI part is unused and in its original packaging.

Return procedure for CY7C1514KV18-300BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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