Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1514KV18-300BZXC

Part No.:
CY7C1514KV18-300BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1514KV18-300BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,637

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1514KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 300 MHz clock frequency, 1.8V core supply, and 1.4–1.8V I/O supply. It implements separate read/write ports with DDR interfaces on both, 2-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.

For engineers reviewing the CY7C1514KV18 datasheet, CY7C1514KV18 pinout, CY7C1514KV18 application, or CY7C1514KV18 equivalent, key selection criteria include its 300 MHz operation, x36 bus width, 165-ball FBGA package, DOFF-controlled read latency mode, and JTAG 1149.1 test support.

Technical Context

The CY7C1514KV18 uses synchronous pipelined QDR II architecture with independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K/K clocks, enabling concurrent transactions without bus turnaround.

It employs a PLL for precise data placement and supports two timing modes via DOFF: 1.5-cycle read latency (DOFF = HIGH) or 1-cycle latency (DOFF = LOW), matching QDR I compatibility when needed. Echo clocks CQ/CQ are output-synchronized to simplify capture at 700 MT/s.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36 configuration)
Max Clock Frequency300 MHz - enables 700 MT/s effective data rate per port via DDR
Core Supply Voltage1.8 V ± 0.1 V - defines internal logic voltage and power domain isolation
I/O Supply Range1.4 V to 1.8 V - supports HSTL-compatible signaling with variable drive strength
Read LatencySelectable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - impacts pipeline depth in high-speed controllers
Burst Length2-word fixed burst - delivers two 36-bit words per access, optimizing bandwidth efficiency
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in dense PCB layouts

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data input36-bit parallel data sampled on rising edge of K/K; full bus width enables single-cycle 72-bit writes
Q[35:0]Synchronous read data output36-bit parallel output registered to C/C clocks; supports 700 MT/s DDR reads
K / KInput clocks for address/data samplingDual-phase clock pair - K used for read address, K for write address; both control D/Q timing
C / COutput clocks for data captureSeparate clocks for Q outputs to minimize skew; paired with CQ/CQ for source-synchronous timing
CQ / CQEcho clocksOutput copies of C/C, aligned to Q[35:0] edges - eliminates flight-time mismatch in FPGA/ASIC receivers
WPSWrite port selectActive-low signal enabling write operations; deassertion blocks all D[35:0] latching regardless of BWS state
BWS[3:0]Byte write selectsFour active-low signals controlling 8-bit byte lanes; allows partial writes without read-modify-write overhead
DOFFRead latency mode controlHigh = 1.5-cycle latency (QDR II mode); Low = 1-cycle latency (QDR I compatibility)
TMS/TCK/TDI/TDOJTAG boundary scan interfaceIEEE 1149.1 compliant - enables in-system test, debug, and programmable impedance calibration

Key Features

FeatureDesign Value
Independent Read/Write PortsEliminates bus turnaround delay - enables true concurrent read+write at full bandwidth
2-Word Burst + DDR InterfaceDelivers 72 bits per clock edge (36-bit × 2 words × 2 edges/cycle) = 4.32 Gbps aggregate bandwidth at 300 MHz
Echo Clocks (CQ/CQ)Source-synchronous timing reference reduces setup/hold margin requirements by >150 ps in 700 MT/s links
Programmable Impedance via JTAGEnables dynamic HSTL driver calibration without external resistors or layout changes
Depth Expansion SupportRPS/WPS and BWS[3:0] allow stacking multiple CY7C1514KV18 devices for wider or deeper memory configurations

Applications

Packet Buffering in Switch ASICsLine Card Memory in Telecom Routers

Use Scenario: High-throughput packet buffering where ingress and egress traffic must be handled simultaneously without contention.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as shared buffer between parser and scheduler engines, with K/K clocks synchronized to line-rate timing domains.

Use Value: 72-bit x36 bus width matches typical 10G/40G packet header widths; 300 MHz operation sustains ≥4.3 Gbps sustained throughput per port.

Use Scenario: Storing forwarding tables and queue descriptors in modular router line cards requiring deterministic latency.

IC Role / Device Role / Timing Role: Low-latency memory for TCAM assist and queue management, interfaced directly to FPGA fabric using CQ/CQ for reliable capture.

Use Value: 1-cycle read latency mode (DOFF = LOW) reduces lookup pipeline stages; JTAG programmable impedance ensures signal integrity across backplane traces.

Baseband Processing in 4G/LTE eNodeBReal-Time Video Frame Buffering

Use Scenario: Temporary storage of OFDMA symbol buffers during uplink/downlink processing in wireless baseband units.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as ping-pong buffer between FFT and channel estimation blocks, clocked from FPGA-generated K/C domains.

Use Value: Separate RPS/WPS enables alternating read/write phases without arbitration logic; 1.8V core minimizes power in thermally constrained RF modules.

Use Scenario: Inter-frame buffering in broadcast-grade video encoders requiring glitch-free 4K60 RGB/YUV transfers.

IC Role / Device Role / Timing Role: Dual-port frame store allowing simultaneous write of incoming sensor data and read of processed output to encoder engine.

Use Value: 2-word burst delivers full 36-bit pixel quads per access; echo clocks eliminate need for complex deskew circuitry in high-resolution timing paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C362000B-300BIN300 MHz QDR II+, 2M × 36, 1.5V core, no DOFF latency selectionLacks 1-cycle latency mode; requires fixed 1.5-cycle timing in all configurationsChoose when system design locks to QDR II+ spec and does not require QDR I compatibility
IS45S32800J-300BLI300 MHz QDR II, 2M × 36, 1.8V core, but only 144-ball FBGA (11 × 13 mm)Smaller footprint but reduced thermal mass and fewer power/ground balls - limits max sustained bandwidth under thermal stressChoose for space-constrained designs where thermal derating below 300 MHz is acceptable

Compared with AS7C362000B-300BIN and IS45S32800J-300BLI, the CY7C1514KV18 uniquely supports selectable read latency (1 or 1.5 cycles) and includes JTAG-based impedance tuning - critical for signal integrity in multi-GHz FPGA interfaces.

Availability

CY7C1514KV18 is available at Aetrix Electronics and suitable for packet buffering in network switches, line card memory in telecom routers, and baseband processing in 4G/LTE eNodeB systems requiring stable component supply across extended production lifecycles.

Supply support for CY7C1514KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

The QDR® II SRAM product line targets high-speed packet processing and real-time buffering applications where deterministic latency, concurrent access, and DDR bandwidth are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1514KV18?

The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle latency (standard QDR II operation); when LOW, it configures the device for 1-cycle latency, providing backward compatibility with QDR I timing. This setting affects internal pipeline staging and must be held stable during initialization.

How does the CY7C1514KV18 handle partial writes?

Partial writes are controlled by the four Byte Write Select (BWS[3:0]) inputs, each enabling or disabling one 8-bit lane of the 36-bit D[35:0] bus. When a BWS signal is deasserted (HIGH), the corresponding byte remains unaltered - eliminating need for read-modify-write cycles and reducing bus traffic in descriptor updates.

Can the CY7C1514KV18 operate with only one clock domain?

Yes - the device supports single-clock mode where K and C are driven by the same source, and K and C are tied together. In this configuration, the internal PLL is bypassed, and echo clocks CQ/CQ track the single input clock, simplifying timing closure at the cost of reduced skew tolerance versus dual-clock operation.

What is the purpose of the NC/144M and NC/288M pins?

NC/144M and NC/288M are no-connect pins not bonded to the die; they may be left floating or tied to any voltage level (VDD, VSS, or mid-rail). These pins exist for package compatibility across the QDR II family and have no electrical function - their state does not affect device operation or timing.

CY7C1514KV18-300BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1514KV18-300BZXC FAQ

1.How can I place an order for CY7C1514KV18-300BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1514KV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1514KV18-300BZXC reliable?

The price and inventory of CY7C1514KV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514KV18-300BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1514KV18-300BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1514KV18-300BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1514KV18-300BZXC?

CY7C1514KV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1514KV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1514KV18-300BZXC?

For technical support, including CY7C1514KV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514KV18-300BZXC requirements.

6.How does Aetrix verify that CY7C1514KV18-300BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1514KV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514KV18-300BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1514KV18-300BZXC?

All CY7C1514KV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514KV18-300BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1514KV18-300BZXC part is unused and in its original packaging.

Return procedure for CY7C1514KV18-300BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1514KV18-300BZXC Tags

  • CY7C1514KV18-300BZXC
  • CY7C1514KV18-300BZXC PDF
  • CY7C1514KV18-300BZXC Datasheet
  • CY7C1514KV18-300BZXC Specifications
  • CY7C1514KV18-300BZXC Images
  • Infineon Technologies
  • Infineon Technologies CY7C1514KV18-300BZXC
  • Buy CY7C1514KV18-300BZXC
  • CY7C1514KV18-300BZXC Price
  • CY7C1514KV18-300BZXC Distributor
  • CY7C1514KV18-300BZXC Supplier
  • CY7C1514KV18-300BZXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER