Infineon Technologies CY7C1514KV18-333BZC
- Part No.:
- CY7C1514KV18-333BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1514KV18-333BZC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1514KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 333 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply. It implements separate read/write ports, DDR interfaces on both ports (700 Mbps effective data rate), and 2-word burst architecture for high-bandwidth networking buffers in packet switching ASICs.
For engineers reviewing the CY7C1514KV18 datasheet, CY7C1514KV18 pinout, CY7C1514KV18 application, or CY7C1514KV18 equivalent, key selection criteria include concurrent read/write throughput, echo clock (CQ) timing margin, DOFF-controlled read latency (1.5-cycle vs. 1-cycle), byte write select (BWS[3:0]) granularity, and 165-ball FBGA package compatibility with high-speed PCB layout constraints.
Technical Context
The CY7C1514KV18 uses synchronous pipelined QDR II architecture with independent read and write ports sharing a multiplexed address bus latched on alternating edges of the K clock. Its dual DDR interfaces transfer data on every rising edge of K/K (write) and C/C (read), achieving 700 MT/s effective bandwidth without bus turnaround.
It integrates a PLL for precise data placement, supports JTAG 1149.1 boundary scan, and features programmable HSTL output drive strength. Read latency is configurable via DOFF: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), enabling trade-offs between timing margin and pipeline depth in real-time traffic management systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 bits) - supports full-word buffering for 10 GbE/40 GbE packet header processing |
| Max Clock Frequency | 333 MHz - enables 666 MT/s per port (DDR), delivering 47.9 GB/s aggregate bandwidth |
| Read Latency | Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - adjusts pipeline alignment for FPGA/ASIC interface timing closure |
| Supply Voltages | VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - allows interoperability with 1.5 V or 1.8 V I/O domains in multi-voltage SoC subsystems |
| Burst Length | 2-word fixed burst - guarantees deterministic access time and eliminates variable-latency burst termination logic |
| Write Select Granularity | BWS[3:0] (4 × byte-select) - enables partial-word updates without read-modify-write, critical for metadata field editing in flow tables |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - supports high-density routing with controlled impedance for >500 MHz signal integrity |
Pinout & Package
165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit parallel data sampled on rising edge of K clock; supports full-word or byte-select (BWS[3:0]) writes |
| Q[35:0] | Synchronous read data output | 36-bit DDR output registered to C/C clocks; echo clock CQ aligns capture window for FPGA input registers |
| A[19:0] | Multiplexed address input | 20-bit address latched on alternating K clock edges for read/write port separation |
| K, K | Write/read clock inputs | Dual-phase input clocks - K drives write operations, K drives read operations; both use rising-edge sampling |
| C, C | Read data output clocks | Output clocks for Q[35:0]; minimize flight-time skew versus data; used with CQ for source-synchronous capture |
| CQ, CQ | Echo clocks | Delayed copies of C/C; simplify high-speed data capture by providing aligned strobes at receiver location |
| BWS[3:0] | Byte write select | Four active-low signals controlling write enable per 8-bit byte - enables partial-word updates without RMW overhead |
| DOFF | Read latency mode control | Active-high signal selecting 1.5-cycle (HIGH) or 1-cycle (LOW) read latency - tunes timing margin vs. pipeline efficiency |
| RPS, WPS | Port select | Active-low read/write port enables - support depth expansion across multiple devices without external address decoding |
| VDD, VDDQ, VSS | Power/ground | Dual-supply design: VDD (1.8 V core), VDDQ (1.4–1.8 V I/O), VSS (common ground); requires separate decoupling per supply domain |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Eliminates bus turnaround delay - enables true concurrent read+write transactions per clock cycle in traffic shaping engines |
| 2-word burst + DDR I/O | Guarantees 72-bit data transfer every 3 ns at 333 MHz - matches wire-speed ingress/egress requirements of 40G line cards |
| Configurable 1- or 1.5-cycle read latency | DOFF pin allows runtime optimization: 1-cycle for minimal latency in control-plane lookups, 1.5-cycle for robust setup/hold in high-temperature environments |
| Four independent byte write selects (BWS[3:0]) | Enables atomic 8-bit field updates in packet headers (e.g., TTL decrement, checksum recalculation) without full-word read-modify-write |
| Echo clocks (CQ/CQ) | Provides source-synchronous strobes aligned to Q[35:0] - reduces timing uncertainty to <100 ps for reliable >500 MHz capture in FPGAs |
Applications
| Packet Buffering in 40G Switch ASICs | Traffic Shaping Engine Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet frames in cut-through switching pipelines with sub-100 ns latency budgets. IC Role / Device Role / Timing Role: Dual-port SRAM serving as ingress/egress packet buffer with simultaneous read (transmit) and write (receive) access. Use Value: Concurrent port operation eliminates arbitration stalls; 2-word burst delivers full 72-bit header + payload segment per cycle, sustaining 40 Gbps line rate. | Use Scenario: Holding per-flow queue state and scheduling tokens in hierarchical quality-of-service (H-QoS) schedulers. IC Role / Device Role / Timing Role: Low-latency memory backing scheduler lookup tables and credit counters updated at packet arrival/departure. Use Value: Byte-write select (BWS[3:0]) enables atomic token updates; configurable DOFF latency ensures timing closure across temperature/voltage corners. |
| Network Processor Flow Table Cache | High-Speed Test Equipment Pattern Memory |
Use Scenario: Caching IPv4/IPv6 forwarding entries and ACL rules for hardware-accelerated lookups in multi-core NPs. IC Role / Device Role / Timing Role: High-bandwidth SRAM acting as L1 flow table cache, fed by slower DRAM-based master tables. Use Value: 700 MT/s DDR interface supplies rule-match engines with 25.6 GB/s sustained bandwidth - exceeds TCAM power/performance trade-offs. | Use Scenario: Storing stimulus/response vectors for automated functional testing of high-speed SerDes PHYs at 28+ Gbps. IC Role / Device Role / Timing Role: Deterministic-access pattern memory synchronized to test controller clocks via echo-clock capture. Use Value: CQ-aligned data capture achieves <150 ps timing margin at 333 MHz; BWS[3:0] supports selective vector patching during test execution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1512KV18 | 4M × 18 organization (72 Mbit), same QDR II architecture, 333 MHz, but 18-bit bus width | Requires two devices for 36-bit data path; increases PCB area and interconnect complexity | Select when system already uses 18-bit datapaths or needs higher density per bit-width than 2M×36 offers |
| AS7C3256A-15JCIN | Commercial-grade 256K × 16 async SRAM, no DDR/QDR, 15 ns access, single-port | Lacks concurrent read/write, no echo clocks or burst - unsuitable for wire-speed packet buffering | Only viable for low-bandwidth control-plane storage where timing determinism is non-critical |
Compared with CY7C1512KV18, the CY7C1514KV18 delivers identical density in half the device count for 36-bit interfaces, reducing routing congestion and skew. Versus AS7C3256A-15JCIN, it provides 30× higher effective bandwidth and deterministic latency essential for real-time networking.
Availability
CY7C1514KV18 is available at Aetrix Electronics and suitable for 40G switch fabric design, network processor acceleration, high-speed test instrumentation, and telecom line card development requiring stable component supply and long-term lifecycle assurance.
Supply support for CY7C1514KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.
The QDR II SRAM product line targets high-speed packet processing infrastructure, delivering deterministic latency, concurrent access, and DDR bandwidth for ASIC/FPGA co-processing in carrier-grade equipment.
FAQ
What is the function of the DOFF pin on CY7C1514KV18?
The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting directly affects the number of clock cycles between address assertion and valid Q[35:0] output, and must be synchronized with system clock domain crossing logic.
How does the CY7C1514KV18 handle partial-word writes?
It uses four active-low byte write select signals (BWS[3:0]), each controlling one 8-bit byte of the 36-bit D[35:0] bus. When a BWS signal is deasserted, the corresponding byte is masked during write operations, preserving existing data in those bits - eliminating need for read-modify-write sequences in metadata update scenarios.
Can the CY7C1514KV18 operate with only a single clock domain?
Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise), simplifying system clocking. In this configuration, the internal PLL remains active for data placement accuracy, but echo clocks (CQ/CQ) still provide source-synchronous capture aids for high-speed receivers.
What is the purpose of the NC/144M and NC/288M pins?
These are no-connect pins not bonded to the die; they may be left floating or tied to any voltage level (VDD, VSS, or mid-rail) without affecting operation. Their presence accommodates pinout compatibility across the QDR II family (e.g., CY7C1510KV18 uses NC/144M for different internal routing), ensuring consistent PCB footprint reuse.
CY7C1514KV18-333BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1514KV18-333BZC FAQ
1.How can I place an order for CY7C1514KV18-333BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1514KV18-333BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1514KV18-333BZC reliable?
The price and inventory of CY7C1514KV18-333BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514KV18-333BZC is usually 5 days.
3.What payment methods are accepted for CY7C1514KV18-333BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1514KV18-333BZC transactions.
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CY7C1514KV18-333BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1514KV18-333BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1514KV18-333BZC?
For technical support, including CY7C1514KV18-333BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514KV18-333BZC requirements.
6.How does Aetrix verify that CY7C1514KV18-333BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1514KV18-333BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514KV18-333BZC meets industry standards.
7.What is the process for return or replacement of CY7C1514KV18-333BZC?
All CY7C1514KV18-333BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514KV18-333BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1514KV18-333BZC part is unused and in its original packaging.
Return procedure for CY7C1514KV18-333BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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