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Infineon Technologies CY7C1514KV18-333BZC

Part No.:
CY7C1514KV18-333BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1514KV18-333BZC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
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Payment
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Inventory:1,816

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Product details

Overview

CY7C1514KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 333 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply. It implements separate read/write ports, DDR interfaces on both ports (700 Mbps effective data rate), and 2-word burst architecture for high-bandwidth networking buffers in packet switching ASICs.

For engineers reviewing the CY7C1514KV18 datasheet, CY7C1514KV18 pinout, CY7C1514KV18 application, or CY7C1514KV18 equivalent, key selection criteria include concurrent read/write throughput, echo clock (CQ) timing margin, DOFF-controlled read latency (1.5-cycle vs. 1-cycle), byte write select (BWS[3:0]) granularity, and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

The CY7C1514KV18 uses synchronous pipelined QDR II architecture with independent read and write ports sharing a multiplexed address bus latched on alternating edges of the K clock. Its dual DDR interfaces transfer data on every rising edge of K/K (write) and C/C (read), achieving 700 MT/s effective bandwidth without bus turnaround.

It integrates a PLL for precise data placement, supports JTAG 1149.1 boundary scan, and features programmable HSTL output drive strength. Read latency is configurable via DOFF: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), enabling trade-offs between timing margin and pipeline depth in real-time traffic management systems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36 bits) - supports full-word buffering for 10 GbE/40 GbE packet header processing
Max Clock Frequency333 MHz - enables 666 MT/s per port (DDR), delivering 47.9 GB/s aggregate bandwidth
Read LatencyConfigurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - adjusts pipeline alignment for FPGA/ASIC interface timing closure
Supply VoltagesVDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - allows interoperability with 1.5 V or 1.8 V I/O domains in multi-voltage SoC subsystems
Burst Length2-word fixed burst - guarantees deterministic access time and eliminates variable-latency burst termination logic
Write Select GranularityBWS[3:0] (4 × byte-select) - enables partial-word updates without read-modify-write, critical for metadata field editing in flow tables
Package165-ball FBGA (13 × 15 × 1.4 mm) - supports high-density routing with controlled impedance for >500 MHz signal integrity

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data input36-bit parallel data sampled on rising edge of K clock; supports full-word or byte-select (BWS[3:0]) writes
Q[35:0]Synchronous read data output36-bit DDR output registered to C/C clocks; echo clock CQ aligns capture window for FPGA input registers
A[19:0]Multiplexed address input20-bit address latched on alternating K clock edges for read/write port separation
K, KWrite/read clock inputsDual-phase input clocks - K drives write operations, K drives read operations; both use rising-edge sampling
C, CRead data output clocksOutput clocks for Q[35:0]; minimize flight-time skew versus data; used with CQ for source-synchronous capture
CQ, CQEcho clocksDelayed copies of C/C; simplify high-speed data capture by providing aligned strobes at receiver location
BWS[3:0]Byte write selectFour active-low signals controlling write enable per 8-bit byte - enables partial-word updates without RMW overhead
DOFFRead latency mode controlActive-high signal selecting 1.5-cycle (HIGH) or 1-cycle (LOW) read latency - tunes timing margin vs. pipeline efficiency
RPS, WPSPort selectActive-low read/write port enables - support depth expansion across multiple devices without external address decoding
VDD, VDDQ, VSSPower/groundDual-supply design: VDD (1.8 V core), VDDQ (1.4–1.8 V I/O), VSS (common ground); requires separate decoupling per supply domain

Key Features

FeatureDesign Value
Separate read/write data portsEliminates bus turnaround delay - enables true concurrent read+write transactions per clock cycle in traffic shaping engines
2-word burst + DDR I/OGuarantees 72-bit data transfer every 3 ns at 333 MHz - matches wire-speed ingress/egress requirements of 40G line cards
Configurable 1- or 1.5-cycle read latencyDOFF pin allows runtime optimization: 1-cycle for minimal latency in control-plane lookups, 1.5-cycle for robust setup/hold in high-temperature environments
Four independent byte write selects (BWS[3:0])Enables atomic 8-bit field updates in packet headers (e.g., TTL decrement, checksum recalculation) without full-word read-modify-write
Echo clocks (CQ/CQ)Provides source-synchronous strobes aligned to Q[35:0] - reduces timing uncertainty to <100 ps for reliable >500 MHz capture in FPGAs

Applications

Packet Buffering in 40G Switch ASICsTraffic Shaping Engine Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in cut-through switching pipelines with sub-100 ns latency budgets.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as ingress/egress packet buffer with simultaneous read (transmit) and write (receive) access.

Use Value: Concurrent port operation eliminates arbitration stalls; 2-word burst delivers full 72-bit header + payload segment per cycle, sustaining 40 Gbps line rate.

Use Scenario: Holding per-flow queue state and scheduling tokens in hierarchical quality-of-service (H-QoS) schedulers.

IC Role / Device Role / Timing Role: Low-latency memory backing scheduler lookup tables and credit counters updated at packet arrival/departure.

Use Value: Byte-write select (BWS[3:0]) enables atomic token updates; configurable DOFF latency ensures timing closure across temperature/voltage corners.

Network Processor Flow Table CacheHigh-Speed Test Equipment Pattern Memory

Use Scenario: Caching IPv4/IPv6 forwarding entries and ACL rules for hardware-accelerated lookups in multi-core NPs.

IC Role / Device Role / Timing Role: High-bandwidth SRAM acting as L1 flow table cache, fed by slower DRAM-based master tables.

Use Value: 700 MT/s DDR interface supplies rule-match engines with 25.6 GB/s sustained bandwidth - exceeds TCAM power/performance trade-offs.

Use Scenario: Storing stimulus/response vectors for automated functional testing of high-speed SerDes PHYs at 28+ Gbps.

IC Role / Device Role / Timing Role: Deterministic-access pattern memory synchronized to test controller clocks via echo-clock capture.

Use Value: CQ-aligned data capture achieves <150 ps timing margin at 333 MHz; BWS[3:0] supports selective vector patching during test execution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1512KV184M × 18 organization (72 Mbit), same QDR II architecture, 333 MHz, but 18-bit bus widthRequires two devices for 36-bit data path; increases PCB area and interconnect complexitySelect when system already uses 18-bit datapaths or needs higher density per bit-width than 2M×36 offers
AS7C3256A-15JCINCommercial-grade 256K × 16 async SRAM, no DDR/QDR, 15 ns access, single-portLacks concurrent read/write, no echo clocks or burst - unsuitable for wire-speed packet bufferingOnly viable for low-bandwidth control-plane storage where timing determinism is non-critical

Compared with CY7C1512KV18, the CY7C1514KV18 delivers identical density in half the device count for 36-bit interfaces, reducing routing congestion and skew. Versus AS7C3256A-15JCIN, it provides 30× higher effective bandwidth and deterministic latency essential for real-time networking.

Availability

CY7C1514KV18 is available at Aetrix Electronics and suitable for 40G switch fabric design, network processor acceleration, high-speed test instrumentation, and telecom line card development requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1514KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

The QDR II SRAM product line targets high-speed packet processing infrastructure, delivering deterministic latency, concurrent access, and DDR bandwidth for ASIC/FPGA co-processing in carrier-grade equipment.

FAQ

What is the function of the DOFF pin on CY7C1514KV18?

The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting directly affects the number of clock cycles between address assertion and valid Q[35:0] output, and must be synchronized with system clock domain crossing logic.

How does the CY7C1514KV18 handle partial-word writes?

It uses four active-low byte write select signals (BWS[3:0]), each controlling one 8-bit byte of the 36-bit D[35:0] bus. When a BWS signal is deasserted, the corresponding byte is masked during write operations, preserving existing data in those bits - eliminating need for read-modify-write sequences in metadata update scenarios.

Can the CY7C1514KV18 operate with only a single clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise), simplifying system clocking. In this configuration, the internal PLL remains active for data placement accuracy, but echo clocks (CQ/CQ) still provide source-synchronous capture aids for high-speed receivers.

What is the purpose of the NC/144M and NC/288M pins?

These are no-connect pins not bonded to the die; they may be left floating or tied to any voltage level (VDD, VSS, or mid-rail) without affecting operation. Their presence accommodates pinout compatibility across the QDR II family (e.g., CY7C1510KV18 uses NC/144M for different internal routing), ensuring consistent PCB footprint reuse.

CY7C1514KV18-333BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1514KV18-333BZC FAQ

1.How can I place an order for CY7C1514KV18-333BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1514KV18-333BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1514KV18-333BZC reliable?

The price and inventory of CY7C1514KV18-333BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514KV18-333BZC is usually 5 days.

3.What payment methods are accepted for CY7C1514KV18-333BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1514KV18-333BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1514KV18-333BZC?

CY7C1514KV18-333BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1514KV18-333BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1514KV18-333BZC?

For technical support, including CY7C1514KV18-333BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514KV18-333BZC requirements.

6.How does Aetrix verify that CY7C1514KV18-333BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1514KV18-333BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514KV18-333BZC meets industry standards.

7.What is the process for return or replacement of CY7C1514KV18-333BZC?

All CY7C1514KV18-333BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514KV18-333BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1514KV18-333BZC part is unused and in its original packaging.

Return procedure for CY7C1514KV18-333BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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