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Infineon Technologies CY7C1514KV18-333BZXI

Part No.:
CY7C1514KV18-333BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1514KV18-333BZXI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
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Payment
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Inventory:4,618

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Product details

Overview

CY7C1514KV18-333BZXI from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 333 MHz clock frequency, 1.8V core supply, and 1.4–1.8V I/O supply. It implements separate read/write ports with DDR interfaces on both, 2-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering systems.

For engineers reviewing the CY7C1514KV18-333BZXI datasheet, CY7C1514KV18-333BZXI pinout, CY7C1514KV18-333BZXI application, or CY7C1514KV18-333BZXI equivalent, key selection criteria include 333 MHz operation, 2M × 36 x18 bus width, FBGA-165 package, DOFF-controlled read latency mode, and HSTL-compatible variable-drive outputs.

Technical Context

This QDR II SRAM uses dual independent clock domains: K/K for address/data input timing and C/C for output timing, enabling concurrent read/write transactions without bus turnaround. Its synchronous self-timed write circuitry eliminates external write pulse control, while the integrated PLL ensures precise data placement relative to echo clocks.

The device supports programmable read latency (1-cycle when DOFF = LOW; 1.5-cycle when DOFF = HIGH) and depth expansion via RPS/WPS and BWS[3:0] signals. All inputs are registered on rising edges of K/K; all outputs are edge-aligned to C/C or CQ/CQ, minimizing skew in 700 MT/s DDR data paths.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36 bits), enabling high-throughput packet buffer storage in 10G+ switch ASICs
Max Clock Frequency333 MHz - supports sustained 666 MT/s per port (1.332 GB/s aggregate bandwidth)
Read LatencyConfigurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - allows tuning for system timing closure
Core SupplyVDD = 1.8 V ±0.1 V - matches advanced logic process nodes and reduces dynamic power vs. 2.5V SRAMs
I/O Supply RangeVDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5V or 1.8V FPGA/ASIC I/O banks
Output InterfaceHSTL Class I compatible with variable drive strength - ensures signal integrity on >10 cm PCB traces at 700 MHz
Package165-ball FBGA (13 mm × 15 mm × 1.4 mm) - provides thermal and electrical performance suitable for dense routing in telecom line cards

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 1.4 mm height, RoHS-compliant Pb-free finish (BZXI suffix).

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputs36-bit parallel data sampled on rising edge of K/K; supports full-width or byte-selectable writes via BWS[3:0]
Q[35:0]Synchronous read data outputs36-bit DDR outputs aligned to C/C or echo clocks CQ/CQ; eliminates setup/hold constraints at receiver
A[19:0]Multiplexed address bus20-bit address latched on alternating K/K edges for read/write - reduces pin count vs. dual address buses
WPS, RPSPort select controlsActive-low enables for write/read ports - enables depth expansion across multiple devices without external logic
BWS[3:0]Byte write enableFour independent active-low selects for D[8:0], D[17:9], D[26:18], D[35:27] - enables partial-word updates without read-modify-write
DOFFRead latency mode controlHigh = 1.5-cycle latency (optimized for timing margin); Low = 1-cycle latency (minimizes pipeline delay)
CQ, CQOutput echo clocksSource-synchronous clocks paired with Q[35:0] - simplifies capture in FPGA fabric using IDELAY/ISERDES
K, KInput clock pairDifferential clock inputs for address/data sampling - only rising edges used; supports single-ended or differential termination
C, COutput clock pairDifferential clocks for output register control - minimizes flight time mismatch between data and clock paths
VDDQ, VDD, VSSPower/ground terminalsDual-supply design: VDDQ (1.4–1.8 V) powers I/Os; VDD (1.8 V) powers core - enables independent voltage scaling

Key Features

FeatureDesign Value
Separate read/write ports with DDR I/OEnables true concurrent access - no bus turnaround overhead, doubling effective bandwidth vs. single-port SRAMs
2-word burst architectureGuarantees two sequential words per access - matches typical packet header + payload fetch patterns in network processors
Programmable read latency (1 or 1.5 cycles)Allows system-level trade-off between throughput and timing closure - critical for multi-FPGA memory interconnects
Variable-drive HSTL outputsAdjustable drive strength compensates for trace length and load variations - maintains signal integrity across board variants
JTAG 1149.1 boundary scanEnables production test and debug of high-speed memory interfaces without physical probe access
On-chip PLL for data alignmentLocks output data phase to echo clocks - eliminates need for external delay elements in high-speed capture circuits

Applications

Packet Buffering in 10G Ethernet SwitchesLine Card Memory for Telecom Routers

Use Scenario: Storing ingress/egress packet queues in Layer 2/3 switching ASICs handling 10 Gbps line rates.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer with independent read/write ports synchronized to switch fabric clocks.

Use Value: 1.332 GB/s aggregate bandwidth and 2-word burst support reduce queuing delay by >35% vs. SDR SRAMs in worst-case back-to-back packet scenarios.

Use Scenario: Buffering control-plane messages and forwarding tables in modular router line cards with distributed processing.

IC Role / Device Role / Timing Role: Coherent, pipelined memory resource accessible by multiple ASICs via time-multiplexed K/C clock domains.

Use Value: Full data coherency and synchronous self-timed writes eliminate race conditions during concurrent CPU and packet processor access.

Baseband Processing in 4G/LTE eNodeBReal-Time Video Frame Buffering

Use Scenario: Temporary storage of OFDMA symbol buffers and channel estimation results in LTE baseband units.

IC Role / Device Role / Timing Role: Burst-mode memory interfacing directly to DSP or FPGA-based FFT/IFFT engines with strict timing deadlines.

Use Value: Echo clocks (CQ/CQ) align data edges to FPGA ISERDES sampling windows - achieving <15 ps jitter margin at 700 MT/s.

Use Scenario: Intermediate frame storage between video encoder and decoder pipelines in broadcast-grade encoders.

IC Role / Device Role / Timing Role: Dual-port buffer decoupling asynchronous encode/decode clock domains while maintaining pixel-accurate timing.

Use Value: Independent RPS/WPS control enables seamless frame swapping with zero dropped pixels during resolution transitions (e.g., 1080p ↔ 4K).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth QDR SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-bit, 10 ns access, 165-ball FBGA, 1.8V core, but QDR I architecture (no echo clocks, fixed 1-cycle latency)Lacks CQ/CQ echo clocks and DOFF-configurable latency - requires tighter PCB layout and external timing compensationSelect when legacy QDR I compatibility or lower cost is prioritized over 333 MHz bandwidth and simplified capture timing
ISSI IS61WV102436BLL-15BLI1024K × 36, 15 ns async SRAM, 165-ball FBGA, 3.3V/2.5V - no DDR, no burst, no separate portsAsynchronous interface limits max throughput to ~67 MB/s - unsuitable for >1 Gbps packet bufferingSelect only for non-critical control-plane storage where deterministic latency matters more than bandwidth

Compared with IDT72T3615L10BG and IS61WV102436BLL-15BLI, CY7C1514KV18-333BZXI delivers 20× higher bandwidth via DDR QDR II architecture, configurable latency, and echo-clock–assisted capture - making it uniquely suited for 10G+ data plane applications requiring sub-10 ns timing margins.

Availability

CY7C1514KV18-333BZXI is available at Aetrix Electronics and suitable for 10G Ethernet switching, telecom line card design, LTE baseband processing, and real-time video encoding requiring stable component supply across multi-year production cycles.

Supply support for CY7C1514KV18-333BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

CY7C1514KV18 belongs to the QDR II SRAM product line, engineered specifically for high-speed packet buffering and burst-oriented memory access in ASIC/FPGA-based communications infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1514KV18-333BZXI?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.

How does the CY7C1514KV18-333BZXI handle partial writes to its 36-bit data bus?

It uses four active-low Byte Write Select signals (BWS[3:0]) to enable writing to individual 9-bit byte lanes: BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. Unselected bytes retain their prior values, eliminating need for read-modify-write cycles.

Can CY7C1514KV18-333BZXI operate with only a single clock source instead of differential K/K and C/C?

Yes - the device accepts single-ended clock inputs on K and C pins, with complementary K and C pins tied to VDD or VSS as specified in the datasheet. However, differential operation is recommended for optimal jitter performance and EMI reduction at 333 MHz.

What is the purpose of the NC/144M and NC/288M pins on the FBGA package?

These are no-connect pins not bonded to the die; they may be left floating or tied to any voltage level (VDD, VSS, or mid-rail). Their presence accommodates pinout compatibility across the QDR II family (e.g., CY7C1510KV18 uses NC/144M for internal 144-MHz PLL test mode, unused here).

CY7C1514KV18-333BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1514KV18-333BZXI FAQ

1.How can I place an order for CY7C1514KV18-333BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1514KV18-333BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1514KV18-333BZXI reliable?

The price and inventory of CY7C1514KV18-333BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514KV18-333BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1514KV18-333BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1514KV18-333BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1514KV18-333BZXI?

CY7C1514KV18-333BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1514KV18-333BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1514KV18-333BZXI?

For technical support, including CY7C1514KV18-333BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514KV18-333BZXI requirements.

6.How does Aetrix verify that CY7C1514KV18-333BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1514KV18-333BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514KV18-333BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1514KV18-333BZXI?

All CY7C1514KV18-333BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514KV18-333BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1514KV18-333BZXI part is unused and in its original packaging.

Return procedure for CY7C1514KV18-333BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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