Infineon Technologies CY7C1514V18-167BZI
- Part No.:
- CY7C1514V18-167BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1514V18-167BZI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1514V18 from Cypress Semiconductor is a 72-Mbit QDR-II SRAM with 2M × 36 organization, 167 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It implements dual independent DDR read/write ports with echo clocks (CQ/CQ) and supports synchronous self-timed writes in high-bandwidth networking buffers and packet memory applications.
For engineers reviewing the CY7C1514V18 datasheet, CY7C1514V18 pinout, CY7C1514V18 application, or CY7C1514V18 equivalent, key selection criteria include burst depth (2-word), byte write select support (BWS[3:0]), FBGA-165 package compatibility, HSTL-18 I/O compliance, and DLL-enabled timing accuracy for 500 MT/s data transfer.
Technical Context
The CY7C1514V18 uses QDR-II architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its 20-bit address bus accesses a 1M × 36 internal array per bank (dual-bank configuration), latched on alternating rising edges of K/K clocks.
Read and write operations are fully asynchronous between ports but synchronized to dedicated clock domains: K/K control input registration, while C/C drive output registers and echo clocks CQ/CQ-enabling precise source-synchronous capture at the controller with ±50 ps skew tolerance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 167 MHz - enables 334 MT/s effective throughput per port |
| Data Transfer Rate | 500 MT/s - achieved via DDR interface on both read and write ports |
| Core Supply Voltage | 1.8 V ±0.1 V - defines minimum power rail stability requirement for reliable pipelined operation |
| I/O Supply Range | VDDQ = 1.4 V to 1.8 V - supports HSTL-18 signaling with programmable drive strength |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-pin-count, low-inductance memory placement |
| Write Select Granularity | Four independent byte write enables (BWS[3:0]) - allows partial 36-bit word updates without read-modify-write |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | 36-bit parallel data sampled on rising edge of K/K; supports full or byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data outputs | 36-bit parallel data driven on rising edge of C/C; tri-stated when RPS inactive |
| K / K | Positive/negative input clocks | Edge-aligned clocks for address/data/control sampling; K used for RPS/WPS latching and burst initiation |
| C / C | Positive/negative output clocks | Deskew-capable clocks for Q[35:0] and CQ/CQ; enable source-synchronous capture at controller |
| CQ / CQ | Echo clocks referenced to C/C | Free-running, phase-aligned copies of C/C; simplify timing closure by matching flight time to Q[35:0] |
| RPS / WPS | Read/Write Port Select (active LOW) | Enable independent port activation; deassertion tri-states outputs or ignores D[35:0] without interrupting ongoing bursts |
| BWS[3:0] | Byte Write Selects (active LOW) | Select four 9-bit bytes within 36-bit word; each controls one byte group (D[8:0], D[17:9], D[26:18], D[35:27]) |
| ZQ | Output impedance calibration input | Connects to external resistor to ground to tune Q[35:0]/CQ/CQ output driver impedance to 0.2 × RQ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Eliminates bus turnaround delay and contention-enables concurrent read-after-write in same cycle |
| 2-word burst architecture | Delivers two 36-bit words per access cycle-reduces address strobe overhead and improves sustained bandwidth |
| Delay Lock Loop (DLL) | Aligns internal clock phases to minimize setup/hold violations at 167 MHz; DOFF pin disables DLL for legacy timing modes |
| HSTL-18 compatible I/O | Supports 1.4–1.8 V VDDQ with variable drive strength-ensures signal integrity on high-speed backplanes and switch fabrics |
| JTAG 1149.1 test access | Enables boundary scan testing and in-system debug without additional test fixtures or probe points |
Applications
| Network Packet Buffer | High-Speed Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches with sub-10 ns latency requirements. IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer between ingress parser and egress scheduler, using independent RPS/WPS for lock-free concurrent access. Use Value: 500 MT/s per port enables full line-rate buffering at 10 Gbps Ethernet with zero turnaround penalty and deterministic 2-cycle read latency. |
Use Scenario: Interconnecting crossbar switch controllers and port adapters in modular chassis-based routers. IC Role / Device Role / Timing Role: Shared memory resource for flow control tokens and queue state, accessed simultaneously by multiple ASICs via C/C and CQ/CQ deskewing. Use Value: Echo clocks (CQ/CQ) match Q[35:0] flight time to controller-reducing timing margin allocation by ≥150 ps across 8-layer PCBs. |
| Telecom Line Card Buffer | Real-Time Video Frame Store |
|
Use Scenario: Holding ATM cell payloads and OAM cells in OC-192 SONET framer interfaces requiring burst-aligned access. IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing directly to framer PHY with K/K-driven address latching and C/C-synchronized output capture. Use Value: 2-word burst matches native ATM cell size (53-byte payload); BWS[3:0] enables selective overwrite of cell headers without disturbing payload data. |
Use Scenario: Storing uncompressed 1080p60 YUV422 video frames in broadcast graphics processors with strict frame-synchronous access. IC Role / Device Role / Timing Role: Frame buffer memory accessed by pixel engine (write port) and display controller (read port) with independent clock domains. Use Value: Independent RPS/WPS allows simultaneous frame write and previous-frame read-achieving zero-frame-latency display pipeline with 72 Mbit capacity per buffer. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | 36-bit, 100 MHz max frequency, LVDS I/O, 256-ball PBGA | Limited to 200 MT/s; requires differential signaling infrastructure and larger board area | Choose when system already uses LVDS clock distribution and lower bandwidth suffices |
| ISSI IS61WV102436B | 36-bit, 166 MHz, single-ended LVTTL, 119-pin TQFP | No echo clocks or DLL; lacks source-synchronous timing support for >133 MHz operation | Choose for cost-sensitive, non-critical timing applications where board-level skew control is feasible |
Compared with IDT72T36120L10BG and ISSI IS61WV102436B, CY7C1514V18 delivers higher sustained bandwidth (500 vs. 200/332 MT/s), integrated timing aids (CQ/CQ, DLL), and HSTL-18 compatibility-making it optimal for new designs targeting 10G+ switch fabric and telecom line card applications.
Availability
CY7C1514V18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, telecom line card buffering, and real-time video frame storage requiring stable component supply across multi-year production cycles.
Supply support for CY7C1514V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for communications and industrial systems.
CY7C1514V18 belongs to Cypress's QDR-II SRAM product line, designed specifically for ultra-low-latency, concurrent-access memory subsystems in networking ASICs, telecom infrastructure, and high-end video processing platforms.
FAQ
What is the function of the ZQ pin on CY7C1514V18?
The ZQ pin calibrates the output driver impedance of Q[35:0], CQ, and CQ to match the system data bus. It must be connected to a precision resistor (typically 100 Ω) tied to ground; alternatively, connecting ZQ directly to VDDQ enables minimum-impedance mode. Leaving ZQ unconnected or tying it to GND violates specification and causes undefined output drive strength.
Can CY7C1514V18 operate with only a single clock domain?
Yes-CY7C1514V18 supports single-clock mode where K/K serve both input sampling and output driving. In this mode, C/C are unused, and CQ/CQ are generated relative to K/K. Output timing references shift accordingly, and the DLL remains active unless disabled via DOFF. This mode simplifies clock routing but reduces maximum achievable frequency due to added clock path skew.
How does byte write select (BWS) work for the 36-bit data width?
BWS[3:0] independently enables four 9-bit byte groups: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. Each is sampled synchronously with D[35:0] on the rising edge of K/K. Deasserting any BWS pin leaves its corresponding 9-bit segment unchanged during the write-enabling efficient partial-word updates without read-modify-write cycles.
Is CY7C1514V18 pin-compatible with other devices in the CY7C15xxV18 family?
No-while all variants share the 165-ball FBGA package and core pin functions, pin assignments differ significantly across configurations. For example, CY7C1510V18 (8M×8) uses NWS[1:0], whereas CY7C1514V18 uses BWS[3:0]; address count varies (22 vs. 20 bits); and Q/D bus widths require different ball mappings. Board layout must be specific to CY7C1514V18.
CY7C1514V18-167BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1514V18-167BZI FAQ
1.How can I place an order for CY7C1514V18-167BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1514V18-167BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1514V18-167BZI reliable?
The price and inventory of CY7C1514V18-167BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1514V18-167BZI is usually 5 days.
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Once your CY7C1514V18-167BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1514V18-167BZI?
For technical support, including CY7C1514V18-167BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1514V18-167BZI requirements.
6.How does Aetrix verify that CY7C1514V18-167BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1514V18-167BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1514V18-167BZI meets industry standards.
7.What is the process for return or replacement of CY7C1514V18-167BZI?
All CY7C1514V18-167BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1514V18-167BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1514V18-167BZI part is unused and in its original packaging.
Return procedure for CY7C1514V18-167BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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