Infineon Technologies CY7C1515AV18-200BZC
- Part No.:
- CY7C1515AV18-200BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1515AV18-200BZC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,068
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1515AV18 from Cypress Semiconductor is a 72-Mbit QDR-II SRAM with 2M × 36 organization, 1.8V core supply, and 1.4–1.8V I/O voltage support. It delivers 600 MHz DDR data transfer on independent read/write ports, features 4-word burst architecture, DLL-enabled 1.5-cycle read latency, and operates in 165-ball FBGA (15 × 17 × 1.4 mm). It is used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C1515AV18 datasheet, CY7C1515AV18 pinout, CY7C1515AV18 application, or CY7C1515AV18 equivalent, key selection criteria include QDR-II dual-port timing, x36 bus width compatibility, HSTL-18 I/O compliance, DLL-on/off mode behavior, and FBGA thermal/mechanical constraints in multi-chip memory subsystems.
Technical Context
The CY7C1515AV18 implements true dual-port synchronous pipelined access: separate K/K clocks latch write addresses and data, while C/C clocks drive read outputs with echo clocks (CQ/CQ) for precise source-synchronous capture. Its 512K × 36 internal array is accessed via 19-bit multiplexed address bus, with depth expansion enabled by BWS[3:0] and port-select signals (RPS/WPS).
It supports two operational modes: DLL-enabled QDR-II mode (1.5-cycle read latency, up to 300 MHz clock → 600 Mbps per pin) and DLL-disabled QDR-I mode (1-cycle latency, max 167 MHz). Core logic runs at 1.8 V ±0.1 V; I/O drivers are HSTL-18 compliant with programmable drive strength and ZQ impedance calibration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Max Clock Frequency | 300 MHz - enables 600 MT/s DDR data rate on both ports |
| Read Latency | 1.5 cycles with DLL enabled; 1 cycle with DLL disabled (DOFF = LOW) |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) |
| Burst Length | 4-word fixed burst - reduces address bus toggling and simplifies controller design |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm), RoHS-compliant |
| I/O Standard | HSTL-18 Class I - ensures signal integrity at 600 Mbps with ZQ-calibrated output impedance |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant. Thermal and mechanical design supports high-density memory stacking in telecom line cards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Latched on rising edge of K/K; supports full 36-bit parallel writes |
| Q[35:0] | Synchronous read data outputs | Driven on rising edges of C/C; tri-stated when RPS deasserted |
| BWS[3:0] | Byte write select (active low) | Enables selective 8-bit byte writes; BWS0–BWS3 control D[8:0], D[17:9], D[26:18], D[35:27] |
| RPS / WPS | Read/Write port select (active low) | Independent enable for concurrent read/write operations; critical for full bandwidth utilization |
| K / K, C / C | Differential input clocks | K/K capture addresses/data; C/C clock outputs + generate CQ/CQ echo clocks for deskewed capture |
| CQ / CQ | Source-synchronous echo clocks | Free-running, phase-aligned to C/C; simplify timing closure in high-speed SerDes-adjacent buffers |
| ZQ | Output impedance calibration reference | Connect to resistor-to-ground (RQ) to tune Q[35:0]/CQ/CQ output impedance to 0.2×RQ |
| DOFF | DLL disable control | Pull LOW to force QDR-I mode (1-cycle latency, ≤167 MHz); pull HIGH for QDR-II operation |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Eliminates data bus turnaround delay - enables back-to-back read/write at full bandwidth |
| 4-word burst architecture | Reduces address bus frequency by 4× versus single-word access; lowers controller pin count and routing complexity |
| Delay Lock Loop (DLL) | Enables 1.5-cycle read latency and precise 600 Mbps data placement; configurable via DOFF pin |
| HSTL-18 I/O with ZQ calibration | Ensures consistent 18 Ω output impedance across voltage/temperature/process; improves signal integrity in multi-drop buses |
| JTAG 1149.1 test interface | Supports boundary scan testing and system-level debug without requiring additional test pads or probes |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Line-rate packet buffering in 10G/25G Ethernet switch fabric ASICs where ingress/egress traffic must be stored and forwarded with sub-10 ns latency. IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking first-level buffer between ingress parser and egress scheduler, using concurrent reads/writes to sustain 48 Gbps aggregate throughput. Use Value: 72-Mbit x36 width matches typical 256-bit+ datapaths; 600 Mbps DDR I/O eliminates need for external deserializers or FIFO glue logic. |
Use Scenario: Real-time waveform capture and pattern generation in automated test equipment (ATE) for high-speed serial interfaces (PCIe Gen4/USB3.2). IC Role / Device Role / Timing Role: High-bandwidth trace memory storing sampled analog/digital stimulus-response sequences synchronized to 300 MHz system clock. Use Value: DLL-controlled 1.5-cycle latency ensures deterministic timing alignment between capture clock and read-out clock; CQ/CQ echo clocks simplify FPGA-based capture logic. |
| Telecom Baseband Processing | Avionics Data Concentrator Buffer |
|
Use Scenario: Inter-processor communication buffer in LTE/5G baseband units, where multiple DSP cores exchange FFT/IFFT results and channel estimation data. IC Role / Device Role / Timing Role: Shared memory resource accessed concurrently by transmit and receive processing pipelines using dedicated read/write ports. Use Value: Full data coherency guarantees most recent write is always available on next read; BWS[3:0] enables partial-word updates without disturbing adjacent bytes. |
Use Scenario: ARINC 664 (AFDX) end-system data concentrator requiring deterministic buffering of time-triggered avionics messages before switching or filtering. IC Role / Device Role / Timing Role: Deterministic latency SRAM used as a time-partitioned message queue, with strict read/write isolation enforced by RPS/WPS signaling. Use Value: 1.8V core + HSTL-18 I/O meets DO-254 power integrity requirements; FBGA package supports conformal coating and thermal cycling reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36150 | 36-Mbit (1M × 36), 250 MHz max clock, LVDS I/O, no DLL, 209-pin PQFP | Lower density and bandwidth; lacks echo clocks and ZQ calibration; suited for cost-sensitive, lower-speed AFDX endpoints | Select when footprint compatibility with legacy PQFP designs is required and 300 MHz timing is not needed. |
| ISSI IS61WV102436B | 36-Mbit (1M × 36), 167 MHz async SRAM, CMOS I/O, no burst, no dual-port | Asynchronous operation only; no concurrent read/write; incompatible timing model and pinout | Only consider for non-critical buffering where QDR-II performance and determinism are unnecessary. |
Compared with IDT72T36150 and IS61WV102436B, CY7C1515AV18 uniquely delivers 72-Mbit density with true dual-port DDR, DLL-controlled latency, and HSTL-18/ZQ compliance-making it the sole option for 300 MHz QDR-II systems requiring x36 width and source-synchronous timing.
Availability
CY7C1515AV18 is available at Aetrix Electronics and suitable for network switch fabric buffering, high-speed ATE trace memory, telecom baseband inter-processor communication, and avionics data concentrators requiring stable component supply and long-term industrial lifecycle support.
Supply support for CY7C1515AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.
CY7C1515AV18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic, high-throughput memory interfacing in packet-processing and real-time test systems where dual-port concurrency and sub-ns timing control are mandatory.
FAQ
What is the minimum VDDQ voltage supported for reliable operation?
The CY7C1515AV18 supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V violates HSTL-18 Class I specifications and risks setup/hold violations on Q[35:0] outputs. At 1.4 V, output drive strength is reduced but remains compliant with HSTL termination standards when ZQ calibration is applied.
Can the device operate without connecting the ZQ pin?
No. The ZQ pin must be connected either to a resistor-to-ground (for impedance tuning) or directly to VDDQ (for minimum impedance mode). Leaving ZQ unconnected or tied to VSS causes undefined output driver behavior and may result in signal integrity failures or excessive current draw.
How does DLL disable (DOFF = LOW) affect timing parameters?
When DOFF is pulled LOW, the DLL is disabled and the device reverts to QDR-I timing: read latency drops to 1 cycle, maximum operating frequency is limited to 167 MHz, and CQ/CQ echo clocks track K/K instead of C/C. All AC timing specs shift to QDR-I values per Table 5 of the datasheet.
Is the 165-ball FBGA package compatible with standard reflow profiles?
Yes. The CY7C1515AV18 FBGA uses lead-free solder balls and conforms to IPC/JEDEC J-STD-020D moisture sensitivity level 3. Recommended peak reflow temperature is 260 °C for ≤30 seconds; board layout must observe 0.3 mm solder mask defined pad design and 0.15 mm stencil aperture reduction for optimal void control.
CY7C1515AV18-200BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1515AV18-200BZC FAQ
1.How can I place an order for CY7C1515AV18-200BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1515AV18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1515AV18-200BZC reliable?
The price and inventory of CY7C1515AV18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515AV18-200BZC is usually 5 days.
3.What payment methods are accepted for CY7C1515AV18-200BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515AV18-200BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1515AV18-200BZC?
CY7C1515AV18-200BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1515AV18-200BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1515AV18-200BZC?
For technical support, including CY7C1515AV18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515AV18-200BZC requirements.
6.How does Aetrix verify that CY7C1515AV18-200BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1515AV18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515AV18-200BZC meets industry standards.
7.What is the process for return or replacement of CY7C1515AV18-200BZC?
All CY7C1515AV18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515AV18-200BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1515AV18-200BZC part is unused and in its original packaging.
Return procedure for CY7C1515AV18-200BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1515AV18-200BZC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

