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Infineon Technologies CY7C1515AV18-200BZXI

Part No.:
CY7C1515AV18-200BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1515AV18-200BZXI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,283

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Product details

Overview

CY7C1515AV18 from Cypress Semiconductor is a 72-Mbit QDR-II SRAM with 2M × 36 organization, 1.8V core supply, and dual DDR interfaces supporting 300 MHz clock (600 Mbps per pin). It implements separate read/write ports with echo clocks (CQ/CQ) and DLL-enabled 1.5-cycle read latency, deployed in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1515AV18 datasheet, CY7C1515AV18 pinout, CY7C1515AV18 application, or CY7C1515AV18 equivalent, key selection criteria include x36 bus width, 165-ball FBGA package, HSTL I/O compatibility, DLL-on/off mode timing behavior, and depth-expansion support via BWS[3:0] and port selects.

Technical Context

The CY7C1515AV18 uses QDR-II architecture with fully independent synchronous read and write ports sharing a multiplexed 19-bit address bus (A[18:0]). Each port operates on dedicated DDR clock pairs: K/K for input sampling and C/C for output latching, enabling concurrent 4-word bursts without bus turnaround.

It integrates a Delay Lock Loop (DLL) to align internal timing for precise 1.5-cycle read latency at 300 MHz; when DLL is disabled (DOFF = LOW), it reverts to QDR-I timing with 1-cycle latency and max 167 MHz operation. Output impedance is calibrated via ZQ pin using external resistor to VSS.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 bits), enabling single-chip storage for 2 million 36-bit data words
Max Clock Frequency 300 MHz (K/K and C/C), delivering 600 MT/s effective data rate per pin
Read Latency 1.5 cycles with DLL enabled; 1 cycle with DLL disabled (DOFF = LOW)
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O), supporting HSTL-18 interface levels
Burst Length Fixed 4-word burst per access, reducing address bus toggling frequency by 75% vs. single-word
Write Select Granularity Byte-level control via BWS[3:0], allowing partial 36-bit word updates without read-modify-write
Package 165-ball FBGA (15 mm × 17 mm × 1.4 mm), RoHS-compliant with 0.8 mm ball pitch

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 × 17 mm body, 1.4 mm height, 0.8 mm ball pitch, JEDEC MO-245 compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Sampled on rising edge of K/K; 36-bit parallel input path for full-word or byte-selectable writes
Q[35:0] Synchronous read data outputs Driven on rising edges of C/C; tri-stated automatically when RPS is deasserted
A[18:0] Multiplexed address inputs Latched on alternating rising edges of K/K; 19 pins address entire 2M-word space
RPS / WPS Active-low port select controls Enable independent read/write port activation; critical for depth expansion with multiple devices
BWS[3:0] Byte write select inputs Each controls 9-bit segment of D[35:0]; enables partial-word writes without disturbing other bytes
C / C, K / K Differential clock inputs K/K drive all synchronous inputs; C/C clock output data and enable flight-time deskew across memory subsystem
CQ / CQ Output echo clocks Free-running, phase-aligned copies of C/C; simplify high-speed data capture at controller side
ZQ Output impedance calibration Connect to resistor-to-ground (RQ) to set Q[35:0]/CQ/CQ output impedance to 0.2×RQ
DOFF DLL disable control Pull LOW to disable DLL and operate in QDR-I mode (max 167 MHz, 1-cycle latency)
VDD, VDDQ, VSS Power and ground terminals VDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O; separate power domains reduce noise coupling

Key Features

Feature Design Value
Independent Read/Write Ports Eliminates data bus turnaround delay, enabling true concurrent read+write operations per clock cycle
4-Word Burst Architecture Reduces required address transitions by 75%, lowering routing complexity and signal integrity risk
Delay Lock Loop (DLL) Enables 1.5-cycle read latency at 300 MHz while maintaining setup/hold margins across voltage/temperature
HSTL-Compatible I/O Supports 1.4–1.8 V VDDQ with programmable drive strength, ensuring compatibility with FPGA/ASIC memory controllers
JTAG 1149.1 Test Access Enables boundary-scan testing of interconnects in dense high-speed PCB layouts without physical probe access

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches operating at 10 Gbps+ line rates.

IC Role / Device Role / Timing Role: Dedicated QDR-II SRAM providing simultaneous read (forwarding decision) and write (packet arrival) paths with sub-ns timing precision.

Use Value: 72-Mbit x36 width supports full 128-byte packet buffering per access; 600 MT/s bandwidth prevents backpressure in multi-port switching fabrics.

Use Scenario: Capturing high-resolution waveform samples in automated test equipment (ATE) with >1 GS/s sampling rates.

IC Role / Device Role / Timing Role: High-throughput buffer staging raw ADC data before compression or analysis, synchronized to system clock domain.

Use Value: Concurrent read/write eliminates pipeline stalls during real-time acquisition; DLL ensures deterministic 1.5-cycle latency for trigger-aligned capture windows.

Telecom Baseband Processing FPGA-Based Video Frame Buffer

Use Scenario: Interfacing between digital front-end (DFE) and baseband processors in 4G/5G remote radio units requiring low-latency data exchange.

IC Role / Device Role / Timing Role: Shared memory resource accessed by dual-clock-domain processors (K/K for DFE, C/C for BBP) with echo-clock–assisted capture.

Use Value: CQ/CQ signals compensate for board-level skew between FPGA and SRAM, enabling reliable 300 MHz operation without custom trace-length matching.

Use Scenario: Storing uncompressed 4K video frames (3840×2160×24bpp ≈ 24 Mbytes) in real-time video processing pipelines using Xilinx Ultrascale+ FPGAs.

IC Role / Device Role / Timing Role: External frame buffer interfaced via AXI-QDR bridge IP, leveraging x36 bus width to minimize interface pin count.

Use Value: 2M × 36 organization maps efficiently to 1920×1080 pixel blocks; BWS[3:0] allows partial-frame updates (e.g., UI overlays) without full-frame rewrite overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150 36-Mbit (1M × 36), 250 MHz max, LVDS I/O, no DLL, 134-ball FBGA Lower density and bandwidth; requires external PLL for clock deskew; suited for cost-sensitive mid-bandwidth systems Select when 36-Mbit capacity suffices and LVDS signaling is preferred over HSTL
ISSI IS61WV102436B 36-Mbit (1M × 36), 167 MHz max, QDR-I only, SSTL-2 I/O, 165-ball FBGA No DLL, fixed 1-cycle latency, lower speed ceiling; compatible pinout but not functionally equivalent at 300 MHz Select only for legacy QDR-I designs where upgrade path to QDR-II is blocked by timing or controller constraints

Compared with IDT72T36150 and IS61WV102436B, CY7C1515AV18 delivers double the density and 80% higher bandwidth with DLL-assisted timing closure-critical for next-gen networking and test equipment where concurrent access and sub-ns jitter control are mandatory.

Availability

CY7C1515AV18 is available at Aetrix Electronics and suitable for network switch fabric design, high-speed ATE memory subsystems, telecom baseband buffering, and FPGA-based video processing requiring stable component supply and long-term industrial availability.

Supply support for CY7C1515AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.

CY7C1515AV18 belongs to the QDR-II SRAM product line, engineered specifically for systems requiring deterministic low-latency, concurrent read/write access, and scalable bandwidth in networking, test, and signal processing infrastructure.

FAQ

What is the minimum VDDQ voltage supported for CY7C1515AV18 operation?

The device supports VDDQ from 1.4 V to 1.8 V. At 1.4 V, HSTL Class I output drive strength is maintained, and AC timing parameters remain valid per datasheet specifications. Operation below 1.4 V is not characterized and may violate setup/hold margins or cause output driver malfunction.

Can CY7C1515AV18 operate without connecting the ZQ pin?

No. ZQ must be connected either to a resistor-to-ground (for impedance tuning) or directly to VDDQ (for minimum output impedance mode). Leaving ZQ unconnected or tied to VSS violates the absolute maximum ratings and risks undefined output drive behavior and signal integrity failure.

How does DOFF affect read latency and maximum operating frequency?

When DOFF is pulled LOW, the DLL disables and the device operates in QDR-I mode: read latency reduces to 1 cycle, but maximum frequency drops to 167 MHz. All DLL-related timing parameters (e.g., tDQSQ, tKQ) change; the device must be re-characterized using QDR-I AC specs from the same datasheet.

Is the 165-ball FBGA footprint compatible with other QDR-II SRAMs in the CY7C15xxAV18 family?

Yes-the pinout is identical across CY7C1511AV18, CY7C1526AV18, CY7C1513AV18, and CY7C1515AV18 in the 165-ball FBGA package. This enables drop-in replacement within the same density configuration group, provided address/data bus width and BWS pin mapping match the target application's requirements.

CY7C1515AV18-200BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1515AV18-200BZXI FAQ

1.How can I place an order for CY7C1515AV18-200BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1515AV18-200BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1515AV18-200BZXI reliable?

The price and inventory of CY7C1515AV18-200BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515AV18-200BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1515AV18-200BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515AV18-200BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1515AV18-200BZXI?

CY7C1515AV18-200BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1515AV18-200BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1515AV18-200BZXI?

For technical support, including CY7C1515AV18-200BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515AV18-200BZXI requirements.

6.How does Aetrix verify that CY7C1515AV18-200BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1515AV18-200BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515AV18-200BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1515AV18-200BZXI?

All CY7C1515AV18-200BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515AV18-200BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1515AV18-200BZXI part is unused and in its original packaging.

Return procedure for CY7C1515AV18-200BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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