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Infineon Technologies CY7C1515JV18-300BZI

Part No.:
CY7C1515JV18-300BZI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1515JV18-300BZI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,693

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Product details

Overview

CY7C1515JV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 300 MHz clock operation, DDR interfaces on both read and write ports (600 MHz data rate), 1.5-cycle read latency with DLL enabled, and 165-ball FBGA (15 × 17 × 1.4 mm) package. It serves as a high-bandwidth, low-latency memory buffer in network packet processors and telecom line cards requiring concurrent read/write access without bus turnaround.

For engineers reviewing the CY7C1515JV18 datasheet, CY7C1515JV18 pinout, CY7C1515JV18 application, or CY7C1515JV18 equivalent, key selection criteria include burst depth (4-word), dual-clock timing (K/K and C/C), echo clock support (CQ/CQ), HSTL-18 I/O compatibility, and DLL-enabled latency control for synchronous system integration.

Technical Context

The CY7C1515JV18 implements a true dual-port QDR II architecture with physically separate read and write data paths-Q[35:0] outputs and D[35:0] inputs-enabling simultaneous read and write operations without contention. Its internal 4-array structure (4 × 512K × 36) supports depth expansion via RPS/WPS and BWS[3:0], while address multiplexing reduces pin count to 19 address lines.

Timing is governed by four independent clocks: K/K for input capture and write initiation, C/C for output data strobing, and CQ/CQ echo clocks synchronized to C/C for precise receiver deskewing. The DLL aligns internal delays to achieve 1.5-cycle read latency at 300 MHz; disabling it via DOFF reverts to QDR I mode with 1-cycle latency up to 167 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 configuration)
Maximum Clock Frequency 300 MHz - enables 600 MT/s DDR data transfers on both ports
Read Latency 1.5 cycles with DLL enabled; 1 cycle with DOFF = LOW - directly impacts pipeline depth in packet buffering
I/O Voltage VDDQ = 1.4 V to 1.8 V - compatible with HSTL-18 Class I receivers and drivers
Burst Length 4-word sequential burst - delivers 144 bits per read/write transaction in two K-clock cycles
Package 165-ball FBGA (15 × 17 × 1.4 mm) - supports high-density routing and thermal dissipation in telecom modules
Core Supply VDD = 1.8 V ± 0.1 V - defines core logic speed and power consumption (1140 mA max at 300 MHz)

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, 1.0 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Latched on rising edges of K/K; full 36-bit parallel write path for burst loading
Q[35:0] Synchronous read data outputs Driven on rising edges of C/C; tristated automatically when RPS is deasserted
RPS / WPS Active-low port select controls Enable independent read or write transactions; essential for depth expansion and port arbitration
BWS[3:0] Byte write select inputs Mask individual 9-bit bytes during writes; BWS0–BWS3 cover D[8:0] through D[35:27]
K / K, C / C Differential clock inputs K/K drive all synchronous inputs; C/C clock read outputs and enable flight-time deskew
CQ / CQ Free-running echo clocks Synchronized to C/C; used by external controller for reliable DDR data capture at 600 MHz
ZQ Output impedance calibration input Connects to external 240 Ω resistor to ground to tune Q[35:0] and CQ/CQ output drive strength
DOFF DLL disable control Pull LOW to disable DLL and operate in QDR I mode (1-cycle latency, ≤167 MHz)

Key Features

Feature Design Value
Separate read/write data ports Eliminates bus turnaround overhead and enables true concurrent access in packet forwarding engines
4-word burst architecture Reduces effective address bus frequency by 4×, easing timing closure on high-speed PCBs
Double Data Rate (DDR) I/O Delivers 600 MT/s bandwidth per port using 300 MHz clocks - matches SerDes link rates in switch fabrics
Echo clocks (CQ/CQ) Provide deterministic, board-level deskew reference for FPGA or ASIC data capture logic
JTAG 1149.1 test interface Enables boundary-scan testing of memory interconnects in production and field diagnostics
Variable-drive HSTL outputs Adjustable drive strength via ZQ calibration ensures signal integrity across varying trace lengths and loads

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length IP packets in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as a zero-wait-state first-in-first-out (FIFO) buffer between ingress and egress SerDes lanes.

Use Value: Concurrent read/write allows real-time packet modification while maintaining 600 MT/s throughput per port - critical for <1 µs latency SLA compliance.

Use Scenario: Frame assembly/disassembly in OC-192/STM-64 SONET/SDH line cards.

IC Role / Device Role / Timing Role: High-speed memory staging buffer synchronizing asynchronous tributary data streams to the system clock domain.

Use Value: 4-word burst and echo clocks ensure deterministic timing alignment across multiple devices - enabling precise jitter tolerance in telecom timing recovery circuits.

Baseband Processing in 4G/LTE High-Performance Computing Cache

Use Scenario: Intermediary storage for FFT/IFFT results and channel estimation data in LTE baseband processors.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfacing directly with DSP cores via dedicated read/write buses.

Use Value: 1.5-cycle DLL latency minimizes pipeline stalls during iterative signal processing loops - improving MAC-layer throughput by ~12% vs. QDR I alternatives.

Use Scenario: Shared L3 cache tag directory or coherency tracking table in multi-core server SoCs.

IC Role / Device Role / Timing Role: Synchronous pipelined memory supporting parallel tag lookups and state updates across CPU clusters.

Use Value: Independent RPS/WPS enables lock-free concurrent access - eliminating serialization bottlenecks in cache coherency protocols like MESI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150 36-bit, 72-Mbit QDR II+, 333 MHz max, integrated PLL, no DOFF pin Requires external clock synthesis; lacks DLL disable mode for legacy QDR I interoperability Select when higher clock margin (333 MHz) and integrated PLL simplify clock tree design
ISSI IS61WV102436B 36-bit, 36-Mbit sync SRAM, 200 MHz max, single-port, no DDR or echo clocks Half density, no concurrent access, no burst or echo clock support - limited to simpler buffering Select only for cost-sensitive, lower-bandwidth applications where QDR II features are unnecessary

Compared with IDT72T36150 and IS61WV102436B, the CY7C1515JV18 uniquely balances 300 MHz operation, DLL configurability, echo clock support, and mature QDR II ecosystem compatibility - making it optimal for upgrades from CY7C1513JV18 and integration into established telecom reference designs.

Availability

CY7C1515JV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing in 4G/LTE infrastructure, and high-performance computing cache applications requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.

Supply support for CY7C1515JV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable systems-on-chip for industrial, automotive, and communications markets.

The QDR® II SRAM product line was designed specifically for bandwidth-constrained, low-latency applications in networking and telecommunications equipment - emphasizing deterministic timing, concurrent access, and system-level signal integrity.

FAQ

What is the function of the DOFF pin on CY7C1515JV18?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. In normal operation, DOFF must be tied HIGH via a ≤10 kΩ pull-up resistor to enable 1.5-cycle latency at 300 MHz.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external 240 Ω resistor to ground to calibrate the output impedance of Q[35:0] and CQ/CQ signals to 48 Ω (0.2 × 240 Ω). This ensures consistent HSTL-18 signal integrity across process/voltage/temperature variations. Leaving ZQ unconnected or tying it to GND violates specification and may cause timing violations.

Can CY7C1515JV18 operate with only a single clock domain?

Yes - the device supports single-clock mode where K/K serve as both input and output clocks. In this mode, C/C are unused, and Q[35:0] data is driven on rising edges of K/K. However, echo clocks (CQ/CQ) remain functional and synchronized to K/K, preserving deskew capability for receiver-side capture.

What is the purpose of BWS[3:0] in the 36-bit configuration?

BWS[3:0] are active-low byte write select signals that independently enable or mask 9-bit byte lanes within the 36-bit D[35:0] bus. BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. Deasserting any BWS prevents corresponding data from being written, preserving unmasked bytes during partial writes.

CY7C1515JV18-300BZI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1515JV18-300BZI FAQ

1.How can I place an order for CY7C1515JV18-300BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1515JV18-300BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1515JV18-300BZI reliable?

The price and inventory of CY7C1515JV18-300BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515JV18-300BZI is usually 5 days.

3.What payment methods are accepted for CY7C1515JV18-300BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515JV18-300BZI transactions.

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4.How is shipping managed for CY7C1515JV18-300BZI?

CY7C1515JV18-300BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1515JV18-300BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1515JV18-300BZI?

For technical support, including CY7C1515JV18-300BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515JV18-300BZI requirements.

6.How does Aetrix verify that CY7C1515JV18-300BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1515JV18-300BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515JV18-300BZI meets industry standards.

7.What is the process for return or replacement of CY7C1515JV18-300BZI?

All CY7C1515JV18-300BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515JV18-300BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1515JV18-300BZI part is unused and in its original packaging.

Return procedure for CY7C1515JV18-300BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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