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Infineon Technologies CY7C1515JV18-300BZXC

Part No.:
CY7C1515JV18-300BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1515JV18-300BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,040

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Product details

Overview

CY7C1515JV18-300BZXC from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 300 MHz clock frequency, 1.8 V core supply (±0.1 V), 1.4–1.8 V I/O supply (VDDQ), and 1.5-cycle read latency with DLL enabled. It delivers 600 Mbps DDR data transfer on both read and write ports and is used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1515JV18-300BZXC datasheet, CY7C1515JV18-300BZXC pinout, CY7C1515JV18-300BZXC application, or CY7C1515JV18-300BZXC equivalent, key selection criteria include burst depth (4-word), dual-clock timing (K/K and C/C), echo clock support (CQ/CQ), HSTL-18 I/O compatibility, and FBGA-165 package mechanical constraints.

Technical Context

The CY7C1515JV18-300BZXC implements a synchronous pipelined QDR II architecture with physically separate read and write data paths, eliminating bus turnaround overhead. It uses independent K/K input clocks for address/data capture and C/C output clocks for data launch, with CQ/CQ echo clocks synchronized to C/C for precise receiver capture alignment.

Internally organized as four 512K × 36 arrays, it supports depth expansion via RPS/WPS port selects and byte-level write control via BWS[3:0]. The DLL enables 1.5-cycle read latency at 300 MHz; when disabled via DOFF, it operates in QDR I mode with 1-cycle latency up to 167 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 configuration)
Maximum Clock Frequency 300 MHz - defines maximum sustained bandwidth of 4.32 GB/s (36-bit × 600 MT/s)
Read Latency 1.5 cycles with DLL enabled - ensures deterministic timing for pipeline-aligned read bursts
Core Supply Voltage 1.8 V ± 0.1 V - requires tight-regulated core rail; impacts power integrity and noise margin
I/O Supply Range VDDQ = 1.4 V to 1.8 V - supports HSTL-18 signaling and allows interface voltage matching
Package 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-pin-count memory with controlled impedance routing
Burst Length 4-word sequential burst - reduces address bus toggling and simplifies controller address generation logic

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant Pb-free finish.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Latched on rising edges of K/K; full 36-bit parallel write path for burst transfers
Q[35:0] Synchronous read data outputs Driven on rising edges of C/C; tristated automatically when RPS deasserted
RPS / WPS Active-low port select controls Enable independent read/write port activation; essential for depth expansion and interleaved access
BWS[3:0] Byte write select inputs Per-byte masking for partial writes; BWS0–BWS3 control D[8:0], D[17:9], D[26:18], D[35:27] respectively
K / K Positive/negative input clocks Capture all synchronous inputs (address, data, control); define system timing reference
C / C Positive/negative output clocks Control Q[35:0] launch timing; used with CQ/CQ for flight-time deskewing
CQ / CQ Echo clocks referenced to C/C Free-running, phase-aligned copies of C/C; simplify high-speed data capture at controller
ZQ Output impedance calibration input Connects to external 240 Ω resistor to ground to tune Q[35:0] and CQ/CQ drive strength to 48 Ω
DOFF DLL disable control Pull LOW to disable DLL and operate in QDR I mode (1-cycle latency, ≤167 MHz)
TCK/TMS/TDI/TDO JTAG 1149.1 test access port Support boundary-scan testing and device identification during production and debug

Key Features

Feature Design Value
Separate read/write data ports Eliminates bus turnaround delay and contention; enables true concurrent read/write operations
4-word burst architecture Reduces required address transitions by 75% per access; lowers controller address bus complexity
Double Data Rate (DDR) interfaces Delivers 600 MT/s effective throughput per port without increasing clock frequency beyond 300 MHz
Delay Lock Loop (DLL) Enables 1.5-cycle read latency at 300 MHz; provides deterministic, jitter-tolerant data placement
HSTL-18 compatible I/O Ensures signal integrity at 600 Mbps with controlled slew rate and on-die termination support via ZQ
JTAG 1149.1 compliance Enables IEEE-standard boundary scan for PCB interconnect validation and manufacturing test

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: Dedicated burst-access SRAM providing zero-wait-state, concurrent read/write for traffic shaping and queue management.

Use Value: 4.32 GB/s bandwidth and 1.5-cycle latency enable line-rate processing of 40 GbE+ traffic without backpressure.

Use Scenario: Capturing high-frequency waveform samples in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: High-throughput buffer staging sampled data before serial transmission or analysis.

Use Value: DDR interfaces and echo clocks (CQ/CQ) allow precise, skew-compensated capture at 600 MT/s across multiple devices.

Telecom Line Card Buffering Real-Time Video Frame Buffering

Use Scenario: Temporary storage of ATM or SONET cell payloads in carrier-grade line cards.

IC Role / Device Role / Timing Role: Low-latency, depth-expandable memory supporting deterministic jitter-free data flow between framer and switch fabric.

Use Value: Port-select (RPS/WPS) and byte-write (BWS) enable efficient partial updates and memory banking without software overhead.

Use Scenario: Holding uncompressed 4K video frames during real-time encoding/decoding pipelines.

IC Role / Device Role / Timing Role: Burst-capable SRAM interfacing directly to video processor's parallel pixel bus.

Use Value: 36-bit wide interface and 4-word burst reduce memory access count per frame row, lowering controller bandwidth demand.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256B-300BIN 512K × 36, 3.3 V core/I/O, 300 MHz, no DLL, 2-cycle latency Lacks echo clocks and DLL; limited to simpler systems without strict skew control Select only if voltage compatibility (3.3 V) and lower density suffice and DLL-free timing is acceptable
IS61WV102436BLL-300TQI 1M × 36, 3.3 V, 300 MHz, single-port, asynchronous interface No QDR architecture; no concurrent read/write; higher latency and lower effective bandwidth Use only in legacy designs requiring pin-compatible replacement without architectural upgrade

Compared with AS7C3256B-300BIN and IS61WV102436BLL-300TQI, CY7C1515JV18-300BZXC uniquely delivers concurrent 36-bit DDR read/write at 300 MHz with DLL-controlled 1.5-cycle latency and echo-clock–assisted capture-critical for next-generation packet and video processing.

Availability

CY7C1515JV18-300BZXC is available at Aetrix Electronics and suitable for network switching, telecom line card design, and high-speed test instrumentation requiring stable component supply, long-lifecycle support, and verified Pb-free FBGA packaging.

Supply support for CY7C1515JV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, industrial, and automotive applications.

CY7C1515JV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in packet-switched infrastructure where concurrent access and precise timing are mandatory.

FAQ

What is the function of the DOFF pin?

The DOFF pin disables the internal Delay Lock Loop when pulled LOW. In this state, the device reverts to QDR I timing with 1-cycle read latency and a maximum operating frequency of 167 MHz. For normal QDR II operation at 300 MHz with 1.5-cycle latency, DOFF must be pulled HIGH via a ≤10 kΩ resistor to VDDQ.

How does the ZQ pin affect output drive strength?

ZQ connects to an external 240 Ω resistor to ground to calibrate the output driver impedance of Q[35:0] and CQ/CQ pins to 48 Ω (0.2 × 240 Ω). This ensures impedance matching to standard 50 Ω PCB traces. If ZQ is tied directly to VDDQ, the device enters minimum-impedance mode (≈30 Ω), which may increase signal integrity risk on controlled-impedance layouts.

Can CY7C1515JV18-300BZXC operate with only one clock domain?

Yes. When only K and C are used (with K and C tied to VSS or unused), the device operates in single-clock mode: K clocks all inputs and C clocks all outputs. In this configuration, Q[35:0] and CQ are referenced to K and C respectively, simplifying clock distribution at the cost of reduced skew compensation capability compared to dual-clock operation.

What is the purpose of BWS[3:0] in a 36-bit configuration?

BWS[3:0] enables selective byte-level writes to the 36-bit data bus: BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. Each active-low signal masks its corresponding 9-bit byte during write cycles, preserving unmasked bytes in memory-essential for partial updates in protocol header manipulation or metadata insertion.

CY7C1515JV18-300BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1515JV18-300BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1515JV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1515JV18-300BZXC reliable?

The price and inventory of CY7C1515JV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515JV18-300BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1515JV18-300BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515JV18-300BZXC transactions.

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CY7C1515JV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1515JV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1515JV18-300BZXC?

For technical support, including CY7C1515JV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515JV18-300BZXC requirements.

6.How does Aetrix verify that CY7C1515JV18-300BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1515JV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515JV18-300BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1515JV18-300BZXC?

All CY7C1515JV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515JV18-300BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1515JV18-300BZXC part is unused and in its original packaging.

Return procedure for CY7C1515JV18-300BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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