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Infineon Technologies CY7C1515KV18-250BZI

Part No.:
CY7C1515KV18-250BZI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1515KV18-250BZI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,023

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Product details

Overview

CY7C1515KV18 from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports, echo clocks (CQ/CQ), and PLL-based timing control for high-speed networking buffer applications.

For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection criteria include concurrent read/write bandwidth, 1.5-cycle read latency (DOFF = HIGH), FBGA-165 package compatibility, and HSTL-18 I/O drive compliance in packet forwarding systems.

Technical Context

This device implements true dual-port synchronous pipelined SRAM logic with independent K/K input clocks for address/data capture and C/C output clocks for data launch - enabling zero-bus-turnaround operation. Its QDR II architecture supports simultaneous read and write transactions to the same memory array without arbitration delay.

The internal 512K × 36 memory array is accessed via a multiplexed 19-bit address bus latched on alternating edges of K; four sequential 36-bit words burst per access. Echo clocks CQ/CQ align with Q[35:0] outputs to simplify source-synchronous capture at the controller under ±100 ps skew tolerance.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization)
Max Clock Frequency 250 MHz - enables 500 MT/s effective throughput per port
Data Rate 500 Mbps per pin (DDR interface: 250 MHz clock → 500 Mbps)
Read Latency 1.5 cycles when DOFF = HIGH; 1 cycle when DOFF = LOW
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O, HSTL-18 compatible)
Package 165-ball FBGA (13 mm × 15 mm × 1.4 mm, 0.8 mm pitch)
Interface Standard QDR II architecture with separate read/write ports and echo clocks

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 × 15 × 1.4 mm, 0.8 mm pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Write data inputs 36-bit synchronous write bus sampled on rising edge of K/K; supports byte-level writes via BWS[3:0]
Q[35:0] Read data outputs 36-bit DDR output bus launched on rising edges of C/C; tristated when RPS inactive
A[18:0] Address inputs 19-bit multiplexed address bus for 512K-depth array; latched on K rising edge for both ports
RPS / WPS Port select controls Active-low synchronous enables for read/write ports; deassertion triggers automatic tristate after completion
C / C, CQ / CQ Output timing clocks Dual complementary clocks for data launch (C/C) and echo (CQ/CQ) to deskew flight time across PCB traces
K / K Input timing clocks Complementary clocks for address/data capture; only rising edges used for synchronization
BWS[3:0] Byte write selects Four active-low signals controlling 36-bit write granularity: BWS0→D[8:0], BWS1→D[17:9], BWS2→D[26:18], BWS3→D[35:27]

Key Features

Feature Design Value
Concurrent Read/Write Ports Eliminates bus turnaround overhead - enables full-duplex memory access in packet buffering pipelines
Four-Word Burst Architecture Reduces address bus toggling by 75% vs. single-word access; lowers system EMI and routing complexity
Echo Clocks (CQ/CQ) Enables source-synchronous data capture at controller with <±100 ps setup/hold margin at 500 Mbps
Programmable Impedance (ZQ) On-die termination calibration via ZQ pin ensures consistent 50 Ω HSTL-18 output impedance across voltage/temperature
JTAG 1149.1 Compliance Full boundary scan support for production testability and interconnect verification in dense FBGA layouts

Applications

High-Speed Packet Buffering Network Switch Fabric Memory

Use Scenario: Line-rate buffering of 10 GbE/40 GbE ingress traffic in L2/L3 switches before classification and forwarding.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level shared buffer with concurrent read (forwarding engine fetch) and write (ingress packet store).

Use Value: 500 Mbps per pin × 36 bits = 18 Gbps aggregate bandwidth sustains full-duplex 40 GbE line rate without bottleneck.

Use Scenario: Shared memory for crossbar scheduler in modular chassis switches supporting multi-terabit fabric throughput.

IC Role / Device Role / Timing Role: QDR II SRAM providing low-latency, deterministic access to scheduling tables and queue state metadata.

Use Value: 1.5-cycle read latency enables sub-6 ns access time critical for real-time arbitration decisions at 250 MHz clock domain.

Telecom Baseband Processing Test Equipment Pattern Memory

Use Scenario: Real-time frame reordering and jitter buffering in 4G/LTE eNodeB baseband units prior to modulation.

IC Role / Device Role / Timing Role: Synchronous SRAM serving as ping-pong buffer between FFT processing blocks and channel coding engines.

Use Value: Separate RPS/WPS controls allow precise interleaving of upstream/downstream data streams without arbitration logic.

Use Scenario: High-fidelity stimulus/response storage in automated test equipment (ATE) for SoC validation at >500 Mbps data rates.

IC Role / Device Role / Timing Role: Deterministic-access memory storing golden waveform patterns and expected responses for parallel comparison.

Use Value: Echo clocks (CQ/CQ) guarantee <±50 ps timing alignment between pattern generator and comparator circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1515KV18-200BZI Lower max frequency (200 MHz → 400 Mbps/pin); identical 2M×36 organization, FBGA-165, and feature set Suitable for cost-sensitive designs where 18 Gbps bandwidth is sufficient and timing margins are relaxed Select when system clock budget allows 200 MHz operation and thermal/power constraints favor lower current draw
AS7C35128A-250BIN Asynchronous SRAM (not QDR II); no echo clocks, no concurrent ports, 250 MHz async access only; 2M×32 organization Limited to single-direction burst transfers; requires external arbitration logic for full-duplex use Use only in legacy systems requiring pin-compatible replacement without architectural redesign

Compared with CY7C1515KV18-250BZI, the -200BZI variant trades 20% bandwidth for reduced power and cost, while AS7C35128A-250BIN lacks QDR II's concurrent port architecture entirely - making it unsuitable for true full-duplex applications without significant system-level redesign.

Availability

CY7C1515KV18-250BZI is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom baseband processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C1515KV18-250BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1515KV18 belongs to Cypress's QDR II SRAM product line, designed specifically for deterministic, low-latency, full-duplex memory access in packet-switched infrastructure where bus turnaround overhead must be eliminated.

FAQ

What is the function of the DOFF pin on CY7C1515KV18?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for optimal timing margin in high-speed systems; when LOW, it reduces latency to 1 cycle at the cost of tighter setup/hold windows. This setting is sampled synchronously on the K clock rising edge and affects all subsequent read operations until changed.

Can CY7C1515KV18 operate with only a single clock signal?

Yes - the device supports single-clock-domain operation using only the K clock for both input capture and output launch (with C tied to K). However, this forfeits echo clock deskewing capability and reduces maximum reliable data rate due to increased flight-time mismatch sensitivity; dual-clock mode (K/K + C/C) is required for 500 Mbps/pin operation per the datasheet AC specifications.

How does byte write select (BWS) work for 36-bit data width?

BWS[3:0] provides independent control over four 9-bit byte lanes: BWS0 enables D[8:0], BWS1 enables D[17:9], BWS2 enables D[26:18], and BWS3 enables D[35:27]. All BWS signals are sampled synchronously with data on the K clock rising edge; deasserting any BWS leaves the corresponding 9-bit segment unmodified during the write cycle.

Is the ZQ pin required for normal operation?

Yes - the ZQ pin connects to a 240 Ω external resistor to VSS for on-die impedance calibration. Without this connection, HSTL-18 output drivers cannot achieve specified 50 Ω termination accuracy, leading to signal integrity degradation, especially above 300 Mbps/pin. Calibration occurs automatically at power-up and can be retriggered via JTAG.

CY7C1515KV18-250BZI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1515KV18-250BZI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1515KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1515KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-250BZI is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1515KV18-250BZI?

For technical support, including CY7C1515KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-250BZI requirements.

6.How does Aetrix verify that CY7C1515KV18-250BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1515KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-250BZI meets industry standards.

7.What is the process for return or replacement of CY7C1515KV18-250BZI?

All CY7C1515KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-250BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1515KV18-250BZI part is unused and in its original packaging.

Return procedure for CY7C1515KV18-250BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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