Infineon Technologies CY7C1515KV18-250BZI
- Part No.:
- CY7C1515KV18-250BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1515KV18-250BZI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,023
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1515KV18 from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports, echo clocks (CQ/CQ), and PLL-based timing control for high-speed networking buffer applications.
For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection criteria include concurrent read/write bandwidth, 1.5-cycle read latency (DOFF = HIGH), FBGA-165 package compatibility, and HSTL-18 I/O drive compliance in packet forwarding systems.
Technical Context
This device implements true dual-port synchronous pipelined SRAM logic with independent K/K input clocks for address/data capture and C/C output clocks for data launch - enabling zero-bus-turnaround operation. Its QDR II architecture supports simultaneous read and write transactions to the same memory array without arbitration delay.
The internal 512K × 36 memory array is accessed via a multiplexed 19-bit address bus latched on alternating edges of K; four sequential 36-bit words burst per access. Echo clocks CQ/CQ align with Q[35:0] outputs to simplify source-synchronous capture at the controller under ±100 ps skew tolerance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 250 MHz - enables 500 MT/s effective throughput per port |
| Data Rate | 500 Mbps per pin (DDR interface: 250 MHz clock → 500 Mbps) |
| Read Latency | 1.5 cycles when DOFF = HIGH; 1 cycle when DOFF = LOW |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O, HSTL-18 compatible) |
| Package | 165-ball FBGA (13 mm × 15 mm × 1.4 mm, 0.8 mm pitch) |
| Interface Standard | QDR II architecture with separate read/write ports and echo clocks |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 × 15 × 1.4 mm, 0.8 mm pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Write data inputs | 36-bit synchronous write bus sampled on rising edge of K/K; supports byte-level writes via BWS[3:0] |
| Q[35:0] | Read data outputs | 36-bit DDR output bus launched on rising edges of C/C; tristated when RPS inactive |
| A[18:0] | Address inputs | 19-bit multiplexed address bus for 512K-depth array; latched on K rising edge for both ports |
| RPS / WPS | Port select controls | Active-low synchronous enables for read/write ports; deassertion triggers automatic tristate after completion |
| C / C, CQ / CQ | Output timing clocks | Dual complementary clocks for data launch (C/C) and echo (CQ/CQ) to deskew flight time across PCB traces |
| K / K | Input timing clocks | Complementary clocks for address/data capture; only rising edges used for synchronization |
| BWS[3:0] | Byte write selects | Four active-low signals controlling 36-bit write granularity: BWS0→D[8:0], BWS1→D[17:9], BWS2→D[26:18], BWS3→D[35:27] |
Key Features
| Feature | Design Value |
|---|---|
| Concurrent Read/Write Ports | Eliminates bus turnaround overhead - enables full-duplex memory access in packet buffering pipelines |
| Four-Word Burst Architecture | Reduces address bus toggling by 75% vs. single-word access; lowers system EMI and routing complexity |
| Echo Clocks (CQ/CQ) | Enables source-synchronous data capture at controller with <±100 ps setup/hold margin at 500 Mbps |
| Programmable Impedance (ZQ) | On-die termination calibration via ZQ pin ensures consistent 50 Ω HSTL-18 output impedance across voltage/temperature |
| JTAG 1149.1 Compliance | Full boundary scan support for production testability and interconnect verification in dense FBGA layouts |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
|
Use Scenario: Line-rate buffering of 10 GbE/40 GbE ingress traffic in L2/L3 switches before classification and forwarding. IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level shared buffer with concurrent read (forwarding engine fetch) and write (ingress packet store). Use Value: 500 Mbps per pin × 36 bits = 18 Gbps aggregate bandwidth sustains full-duplex 40 GbE line rate without bottleneck. |
Use Scenario: Shared memory for crossbar scheduler in modular chassis switches supporting multi-terabit fabric throughput. IC Role / Device Role / Timing Role: QDR II SRAM providing low-latency, deterministic access to scheduling tables and queue state metadata. Use Value: 1.5-cycle read latency enables sub-6 ns access time critical for real-time arbitration decisions at 250 MHz clock domain. |
| Telecom Baseband Processing | Test Equipment Pattern Memory |
|
Use Scenario: Real-time frame reordering and jitter buffering in 4G/LTE eNodeB baseband units prior to modulation. IC Role / Device Role / Timing Role: Synchronous SRAM serving as ping-pong buffer between FFT processing blocks and channel coding engines. Use Value: Separate RPS/WPS controls allow precise interleaving of upstream/downstream data streams without arbitration logic. |
Use Scenario: High-fidelity stimulus/response storage in automated test equipment (ATE) for SoC validation at >500 Mbps data rates. IC Role / Device Role / Timing Role: Deterministic-access memory storing golden waveform patterns and expected responses for parallel comparison. Use Value: Echo clocks (CQ/CQ) guarantee <±50 ps timing alignment between pattern generator and comparator circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1515KV18-200BZI | Lower max frequency (200 MHz → 400 Mbps/pin); identical 2M×36 organization, FBGA-165, and feature set | Suitable for cost-sensitive designs where 18 Gbps bandwidth is sufficient and timing margins are relaxed | Select when system clock budget allows 200 MHz operation and thermal/power constraints favor lower current draw |
| AS7C35128A-250BIN | Asynchronous SRAM (not QDR II); no echo clocks, no concurrent ports, 250 MHz async access only; 2M×32 organization | Limited to single-direction burst transfers; requires external arbitration logic for full-duplex use | Use only in legacy systems requiring pin-compatible replacement without architectural redesign |
Compared with CY7C1515KV18-250BZI, the -200BZI variant trades 20% bandwidth for reduced power and cost, while AS7C35128A-250BIN lacks QDR II's concurrent port architecture entirely - making it unsuitable for true full-duplex applications without significant system-level redesign.
Availability
CY7C1515KV18-250BZI is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom baseband processing requiring stable component supply across extended product lifecycles.
Supply support for CY7C1515KV18-250BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1515KV18 belongs to Cypress's QDR II SRAM product line, designed specifically for deterministic, low-latency, full-duplex memory access in packet-switched infrastructure where bus turnaround overhead must be eliminated.
FAQ
What is the function of the DOFF pin on CY7C1515KV18?
The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for optimal timing margin in high-speed systems; when LOW, it reduces latency to 1 cycle at the cost of tighter setup/hold windows. This setting is sampled synchronously on the K clock rising edge and affects all subsequent read operations until changed.
Can CY7C1515KV18 operate with only a single clock signal?
Yes - the device supports single-clock-domain operation using only the K clock for both input capture and output launch (with C tied to K). However, this forfeits echo clock deskewing capability and reduces maximum reliable data rate due to increased flight-time mismatch sensitivity; dual-clock mode (K/K + C/C) is required for 500 Mbps/pin operation per the datasheet AC specifications.
How does byte write select (BWS) work for 36-bit data width?
BWS[3:0] provides independent control over four 9-bit byte lanes: BWS0 enables D[8:0], BWS1 enables D[17:9], BWS2 enables D[26:18], and BWS3 enables D[35:27]. All BWS signals are sampled synchronously with data on the K clock rising edge; deasserting any BWS leaves the corresponding 9-bit segment unmodified during the write cycle.
Is the ZQ pin required for normal operation?
Yes - the ZQ pin connects to a 240 Ω external resistor to VSS for on-die impedance calibration. Without this connection, HSTL-18 output drivers cannot achieve specified 50 Ω termination accuracy, leading to signal integrity degradation, especially above 300 Mbps/pin. Calibration occurs automatically at power-up and can be retriggered via JTAG.
CY7C1515KV18-250BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1515KV18-250BZI FAQ
1.How can I place an order for CY7C1515KV18-250BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1515KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1515KV18-250BZI reliable?
The price and inventory of CY7C1515KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-250BZI is usually 5 days.
3.What payment methods are accepted for CY7C1515KV18-250BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515KV18-250BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1515KV18-250BZI?
CY7C1515KV18-250BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1515KV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1515KV18-250BZI?
For technical support, including CY7C1515KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-250BZI requirements.
6.How does Aetrix verify that CY7C1515KV18-250BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1515KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-250BZI meets industry standards.
7.What is the process for return or replacement of CY7C1515KV18-250BZI?
All CY7C1515KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-250BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1515KV18-250BZI part is unused and in its original packaging.
Return procedure for CY7C1515KV18-250BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1515KV18-250BZI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

