Infineon Technologies CY7C1515KV18-300BZCT
- Part No.:
- CY7C1515KV18-300BZCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1515KV18-300BZCT.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1515KV18 from Cypress Semiconductor is a 72-Mbit QDR® II SRAM with 2M × 36 organization, 333 MHz clock support, four-word burst architecture, and dual DDR read/write ports operating at 666 MHz data rate. It delivers concurrent read/write transactions with 1.5-cycle read latency (DOFF = HIGH) and is used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection criteria include its 165-ball FBGA package, 1.8 V core / 1.4–1.8 V I/O supply compatibility, echo clock (CQ/CQ) support for timing margin recovery, and depth expansion via RPS/WPS controls.
Technical Context
The CY7C1515KV18 implements a synchronous pipelined QDR II architecture with physically separate read and write data paths, eliminating bus turnaround delays. Its 512K × 36 memory array is accessed via a shared 19-bit address bus latched on alternating rising edges of the K clock.
It uses two independent clock domains: K/K for address/data input synchronization and C/C for output data capture, with echo clocks (CQ/CQ) aligned to Q[35:0] outputs to simplify high-speed receiver design. The integrated PLL ensures precise data placement relative to output clocks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s DDR throughput per port |
| Read Latency | 1.5 cycles (DOFF = HIGH) - balances bandwidth and timing margin in pipeline-constrained systems |
| Core Supply | 1.8 V ±0.1 V - defines minimum power rail stability requirement for internal logic |
| I/O Supply Range | 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V HSTL interfaces |
| Burst Length | Four 36-bit words - reduces effective address bus toggling frequency by 4× |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory placement |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Write data inputs | 36-bit synchronous input bus sampled on rising edge of K/K; supports byte-level writes via BWS[3:0] |
| Q[35:0] | Read data outputs | 36-bit DDR output bus driven on rising edges of C/C; tristated when RPS is deasserted |
| A[18:0] | Address inputs | 19-bit multiplexed address bus for 2M-depth addressing; shared between read and write ports |
| RPS | Read port select | Active-Low synchronous control; initiates 4-word burst read on rising edge of K |
| WPS | Write port select | Active-Low synchronous control; enables write transaction and data sampling on K/K |
| C, C | Output clock pair | Differential clock for Q[35:0] output timing; used with echo clocks (CQ/CQ) to deskew flight time mismatches |
| K, K | Input clock pair | Differential clock for address, data, and control sampling; rising edges define all synchronous setup/hold windows |
| CQ, CQ | Echo clocks | Output-aligned copies of C/C; enable source-synchronous capture at controller without board-level skew compensation |
| DOFF | Latency mode control | Static input selecting 1.5-cycle (HIGH) or 1-cycle (LOW) read latency; affects timing budget allocation |
| BWS[3:0] | Byte write selects | Four independent Active-Low signals enabling partial 8-bit writes to D[35:0]; preserves unwritten bytes |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Enables true concurrent access-no bus turnaround required, increasing effective bandwidth by up to 2× vs. common-I/O SRAMs |
| Four-word burst architecture | Reduces address bus toggle rate by factor of 4, lowering EMI and simplifying routing in dense PCB layouts |
| Echo clock outputs (CQ/CQ) | Deliver timing-reference clocks phase-aligned to Q[35:0], eliminating need for matched trace lengths in high-speed capture circuits |
| Programmable read latency (DOFF) | Allows system-level trade-off between latency and timing closure: 1-cycle for minimal delay, 1.5-cycle for improved setup margin |
| JTAG 1149.1 test access port | Supports boundary scan testing and in-system debug without requiring additional test pads or probes |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet line cards. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency, non-blocking buffer between ingress parser and egress scheduler logic. Use Value: Concurrent read/write eliminates arbitration stalls, sustaining full 666 MT/s throughput across both ports under real-time traffic load. | Use Scenario: Capturing high-resolution waveform samples in automated test equipment (ATE) with sub-nanosecond timing resolution. IC Role / Device Role / Timing Role: High-bandwidth acquisition memory synchronized to precision clock generators and pattern generators. Use Value: Echo clocks (CQ/CQ) align captured data edges to controller sampling clocks, reducing timing uncertainty to <150 ps. |
| Telecom Baseband Processing | FPGA Co-Processor Cache |
Use Scenario: Interfacing FPGA-based digital signal processors with RF front-end ICs in 4G/5G base stations. IC Role / Device Role / Timing Role: Low-latency, deterministic memory for FFT/IFFT coefficient exchange and channel estimation buffers. Use Value: 1.5-cycle read latency (DOFF = HIGH) provides predictable timing for pipeline-scheduled DSP kernels without dynamic stall insertion. | Use Scenario: Off-chip cache extension for Xilinx UltraScale+ or Intel Stratix 10 FPGAs running compute-intensive vision algorithms. IC Role / Device Role / Timing Role: High-throughput scratchpad memory mapped into FPGA AXI4 interface via custom QDR II controller IP. Use Value: 72-Mbit capacity and 333 MHz clock support deliver >21 GB/s aggregate bandwidth-exceeding on-die BRAM bandwidth by 3.5×. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-bit QDR II+, 250 MHz max clock, 1.5 V core/I/O, no echo clocks | Lacks CQ/CQ outputs; requires external deskew circuitry for >200 MHz operation | Select when lower power and legacy 1.5 V infrastructure outweigh need for echo-clock timing margin |
| ISSI IS61WV102432BLL-150BLI | 32-bit sync SRAM, 150 MHz, single-port, 3.3 V I/O, no DDR or burst | No concurrent access; half the bandwidth; incompatible voltage and timing architecture | Only viable for cost-sensitive, non-real-time buffering where latency and concurrency are not critical |
Compared with IDT72T3615L10BG and IS61WV102432BLL-150BLI, the CY7C1515KV18 uniquely delivers 333 MHz operation with echo clocks and true dual-port concurrency-making it the only choice for systems requiring >20 GB/s sustained bidirectional bandwidth with sub-200 ps timing margin.
Availability
CY7C1515KV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom baseband processing, and FPGA co-processor cache applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for CY7C1515KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing robustness.
The QDR® II SRAM product line targets high-throughput, low-latency data buffering in infrastructure equipment where deterministic timing, concurrent access, and scalable bandwidth are mandatory.
FAQ
What is the function of the DOFF pin on CY7C1515KV18?
The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin; when LOW, it selects 1-cycle latency for minimal delay. This setting is sampled at power-up and remains static during operation-no runtime reconfiguration is supported.
Can CY7C1515KV18 operate with only a single clock input (K only)?
Yes-the device supports single-clock-domain operation using only the K input clock for both input sampling and output data timing. In this mode, Q[35:0] is clocked by K/K instead of C/C, and echo clocks (CQ/CQ) remain functional but track K/K rather than C/C. Full performance (333 MHz) is maintained, though flight-time deskew capability is reduced.
How does byte write select (BWS) work with the 36-bit data bus?
BWS[3:0] controls four independent 8-bit segments of D[35:0]: BWS0 → D[7:0], BWS1 → D[15:8], BWS2 → D[23:16], BWS3 → D[31:24]. D[35:32] are not byte-selectable and always written when WPS is active. Unselected bytes retain their prior values-no read-modify-write cycle is needed.
Is JTAG boundary scan supported on CY7C1515KV18, and what pins are used?
Yes-CY7C1515KV18 implements IEEE 1149.1 JTAG with TDI, TDO, TCK, and TMS routed to dedicated balls (R10, R9, R11, R12). The TAP controller supports instruction register loading, data register scan, and boundary scan testing of all I/O pins except power/ground and NC balls. JTAG can be disabled via fuse or strap option.
CY7C1515KV18-300BZCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1515KV18-300BZCT FAQ
1.How can I place an order for CY7C1515KV18-300BZCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1515KV18-300BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1515KV18-300BZCT reliable?
The price and inventory of CY7C1515KV18-300BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-300BZCT is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515KV18-300BZCT transactions.
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Once your CY7C1515KV18-300BZCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1515KV18-300BZCT?
For technical support, including CY7C1515KV18-300BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-300BZCT requirements.
6.How does Aetrix verify that CY7C1515KV18-300BZCT is sourced from the original manufacturer or authorized distributors?
All CY7C1515KV18-300BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-300BZCT meets industry standards.
7.What is the process for return or replacement of CY7C1515KV18-300BZCT?
All CY7C1515KV18-300BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-300BZCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1515KV18-300BZCT part is unused and in its original packaging.
Return procedure for CY7C1515KV18-300BZCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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