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Infineon Technologies CY7C1515KV18-333BZXC

Part No.:
CY7C1515KV18-333BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1515KV18-333BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,554

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Product details

Overview

CY7C1515KV18 from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II SRAM with four-word burst architecture, 333 MHz clock operation (666 MHz DDR data rate), separate read/write ports, and 1.8 V core / 1.4–1.8 V I/O supply - deployed in high-bandwidth packet buffering for network line cards and switch fabric interfaces.

For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection criteria include concurrent read/write capability, echo clock (CQ/CQ) support for timing margin recovery, DOFF-controlled 1.5-cycle vs. 1-cycle read latency, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements fully independent synchronous read and write ports sharing a multiplexed 19-bit address bus, with all transactions latched on rising edges of K/K clocks. It uses internal self-timed writes and supports depth expansion via RPS/WPS controls and four byte write selects (BWS[3:0]).

The device integrates a PLL for precise data placement, echo clocks (CQ/CQ) for source-synchronous data capture, and programmable HSTL output drivers. Read latency is configurable via DOFF pin: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), enabling trade-offs between throughput and timing closure in FPGA- or ASIC-based memory controllers.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36 organization)
Max Clock Frequency333 MHz - enables 666 MT/s DDR data transfer per port
Read LatencyConfigurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH)
Core Supply1.8 V ±0.1 V - defines minimum operating voltage for internal logic and array
I/O Supply Range1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V memory controllers
Burst LengthFour-word - reduces effective address bus toggling frequency by 4×
Package165-ball FBGA (13 × 15 × 1.4 mm) - optimized for signal integrity in >500 Mbps/channel designs

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputs36-bit parallel data sampled on rising edge of K/K; supports full- or partial-word writes via BWS[3:0]
Q[35:0]Synchronous read data outputs36-bit parallel data driven on rising edges of C/C; tristated when RPS is deasserted
A[18:0]Multiplexed address bus19-bit address shared by read/write ports; latched on rising edge of K clock
RPS, WPSPort select controlsActive-low enables for independent read/write port activation; enables depth expansion
BWS[3:0]Byte write select inputsFour active-low signals controlling write enable per 9-bit byte (D[8:0], D[17:9], D[26:18], D[35:27])
C, COutput data clocksDifferential pair used to clock Q[35:0]; minimizes skew across wide data bus
CQ, CQEcho clocksSource-synchronous output clocks aligned with Q[35:0] for simplified high-speed capture
K, KInput clocksDifferential pair for latching all synchronous inputs (address, data, control); only rising edges used
DOFFRead latency mode controlHigh = 1.5-cycle latency (higher bandwidth); Low = 1-cycle latency (tighter timing)

Key Features

FeatureDesign Value
Separate read/write data pathsEliminates bus turnaround delay - enables true concurrent access without arbitration overhead
Four-word burst architectureReduces required address transition rate by 75%, easing routing and timing closure on dense PCBs
Echo clock (CQ/CQ) supportEnables deterministic data capture at 666 MT/s without complex receiver deskew circuitry
Programmable drive strengthHSTL-compatible output buffers allow impedance tuning to match trace characteristics and reduce reflections
JTAG 1149.1 complianceSupports boundary scan testing and in-system verification of interconnect integrity in production

Applications

Packet Buffering in Switch FabricHigh-Speed Test Equipment Memory

Use Scenario: Line-rate buffering of 10G/25G Ethernet packets in modular switch ASICs requiring zero-latency memory access.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with simultaneous write (packet arrival) and read (packet forwarding) operations.

Use Value: Concurrent ports + 666 MT/s DDR bandwidth sustain full line-rate throughput without pipeline stalls.

Use Scenario: Real-time waveform capture and pattern generation in automated test equipment (ATE) with multi-GHz sampling.

IC Role / Device Role / Timing Role: High-speed acquisition buffer interfacing directly to FPGA-based pattern generators and comparators.

Use Value: Echo clocks (CQ/CQ) and 1-cycle latency mode ensure sub-nanosecond timing alignment between stimulus and response paths.

Telecom Baseband ProcessingAI Accelerator On-Chip Cache Extension

Use Scenario: Inter-processor communication buffer between DSP clusters in 5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Shared memory resource accessed concurrently by multiple processing engines via dedicated read/write ports.

Use Value: Full data coherency and synchronous self-timed writes guarantee consistent data visibility across distributed compute nodes.

Use Scenario: Off-chip L3 cache extension for edge AI accelerators handling real-time vision inference workloads.

IC Role / Device Role / Timing Role: Low-latency, high-bandwidth memory supplementing on-die SRAM capacity for weight/activation storage.

Use Value: 72-Mbit density in compact FBGA-165 enables high-capacity, low-pin-count expansion without sacrificing bandwidth.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C36256A-333BIN2M × 36 QDR II+ SRAM; 333 MHz; supports 1.5 V I/O only (no 1.8 V VDDQ option)Lacks DOFF-configurable latency and echo clock outputs; requires external deskew compensationSelect when system uses strict 1.5 V I/O and latency is fixed at 1 cycle; verify controller compatibility with missing CQ/CQ signals.
IS45S32800J-333BLI2M × 36 QDR II SRAM; identical 333 MHz spec and FBGA-165 package; no JTAG supportMissing IEEE 1149.1 boundary scan; same pinout but BWS mapping differs (BWS[1:0] only)Choose for cost-sensitive deployments where JTAG testability is not required and write granularity matches design needs.

Compared with AS7C36256A-333BIN and IS45S32800J-333BLI, CY7C1515KV18 uniquely delivers DOFF-selectable latency, integrated echo clocks for timing margin recovery, and full JTAG testability - critical for high-reliability telecom and test equipment designs.

Availability

CY7C1515KV18 is available at Aetrix Electronics and suitable for packet buffering in network switches, high-speed test instrumentation, and telecom baseband processing requiring stable component supply across extended production lifecycles.

Supply support for CY7C1515KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1515KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory interfacing in networking and test equipment where concurrent read/write bandwidth and timing precision are critical.

FAQ

What is the function of the DOFF pin on CY7C1515KV18?

The DOFF (Data Output OFF) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for higher sustained bandwidth; when LOW, it selects 1-cycle latency for minimal access delay. This setting directly affects timing budget allocation in the memory controller and must be held stable during operation - it is not dynamically switchable mid-burst.

How does the CY7C1515KV18 handle byte-level writes?

It uses four active-low byte write select signals (BWS[3:0]), each enabling write to a specific 9-bit byte lane: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. Unselected bytes retain prior contents, enabling partial-word updates without read-modify-write cycles - essential for protocol header manipulation in packet processing.

Can CY7C1515KV18 operate with only a single clock domain?

Yes - when C and C are tied together and driven by the same source as K and K, the device operates in single-clock mode. In this configuration, Q[35:0] data is clocked by K/K instead of C/C, simplifying clock distribution at the cost of reduced timing margin; echo clocks (CQ/CQ) remain functional for data capture alignment.

What is the purpose of the NC/144M and NC/288M pins?

These are no-connect pins not bonded to the die; they may be left floating or tied to any valid voltage level (VSS, VDD, or VDDQ) per board layout requirements. They serve as thermal or mechanical relief pads in the FBGA package and have no electrical function - their state does not affect device operation or timing behavior.

CY7C1515KV18-333BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1515KV18-333BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1515KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1515KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-333BZXC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1515KV18-333BZXC?

For technical support, including CY7C1515KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-333BZXC requirements.

6.How does Aetrix verify that CY7C1515KV18-333BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1515KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-333BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1515KV18-333BZXC?

All CY7C1515KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-333BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1515KV18-333BZXC part is unused and in its original packaging.

Return procedure for CY7C1515KV18-333BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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