Infineon Technologies CY7C1515KV18-333BZXC
- Part No.:
- CY7C1515KV18-333BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1515KV18-333BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,554
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1515KV18 from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II SRAM with four-word burst architecture, 333 MHz clock operation (666 MHz DDR data rate), separate read/write ports, and 1.8 V core / 1.4–1.8 V I/O supply - deployed in high-bandwidth packet buffering for network line cards and switch fabric interfaces.
For engineers reviewing the CY7C1515KV18 datasheet, CY7C1515KV18 pinout, CY7C1515KV18 application, or CY7C1515KV18 equivalent, key selection criteria include concurrent read/write capability, echo clock (CQ/CQ) support for timing margin recovery, DOFF-controlled 1.5-cycle vs. 1-cycle read latency, and FBGA-165 package compatibility with high-speed PCB layout constraints.
Technical Context
This QDR II SRAM implements fully independent synchronous read and write ports sharing a multiplexed 19-bit address bus, with all transactions latched on rising edges of K/K clocks. It uses internal self-timed writes and supports depth expansion via RPS/WPS controls and four byte write selects (BWS[3:0]).
The device integrates a PLL for precise data placement, echo clocks (CQ/CQ) for source-synchronous data capture, and programmable HSTL output drivers. Read latency is configurable via DOFF pin: 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), enabling trade-offs between throughput and timing closure in FPGA- or ASIC-based memory controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s DDR data transfer per port |
| Read Latency | Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) |
| Core Supply | 1.8 V ±0.1 V - defines minimum operating voltage for internal logic and array |
| I/O Supply Range | 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V memory controllers |
| Burst Length | Four-word - reduces effective address bus toggling frequency by 4× |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for signal integrity in >500 Mbps/channel designs |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | 36-bit parallel data sampled on rising edge of K/K; supports full- or partial-word writes via BWS[3:0] |
| Q[35:0] | Synchronous read data outputs | 36-bit parallel data driven on rising edges of C/C; tristated when RPS is deasserted |
| A[18:0] | Multiplexed address bus | 19-bit address shared by read/write ports; latched on rising edge of K clock |
| RPS, WPS | Port select controls | Active-low enables for independent read/write port activation; enables depth expansion |
| BWS[3:0] | Byte write select inputs | Four active-low signals controlling write enable per 9-bit byte (D[8:0], D[17:9], D[26:18], D[35:27]) |
| C, C | Output data clocks | Differential pair used to clock Q[35:0]; minimizes skew across wide data bus |
| CQ, CQ | Echo clocks | Source-synchronous output clocks aligned with Q[35:0] for simplified high-speed capture |
| K, K | Input clocks | Differential pair for latching all synchronous inputs (address, data, control); only rising edges used |
| DOFF | Read latency mode control | High = 1.5-cycle latency (higher bandwidth); Low = 1-cycle latency (tighter timing) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround delay - enables true concurrent access without arbitration overhead |
| Four-word burst architecture | Reduces required address transition rate by 75%, easing routing and timing closure on dense PCBs |
| Echo clock (CQ/CQ) support | Enables deterministic data capture at 666 MT/s without complex receiver deskew circuitry |
| Programmable drive strength | HSTL-compatible output buffers allow impedance tuning to match trace characteristics and reduce reflections |
| JTAG 1149.1 compliance | Supports boundary scan testing and in-system verification of interconnect integrity in production |
Applications
| Packet Buffering in Switch Fabric | High-Speed Test Equipment Memory |
|---|---|
Use Scenario: Line-rate buffering of 10G/25G Ethernet packets in modular switch ASICs requiring zero-latency memory access. IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with simultaneous write (packet arrival) and read (packet forwarding) operations. Use Value: Concurrent ports + 666 MT/s DDR bandwidth sustain full line-rate throughput without pipeline stalls. | Use Scenario: Real-time waveform capture and pattern generation in automated test equipment (ATE) with multi-GHz sampling. IC Role / Device Role / Timing Role: High-speed acquisition buffer interfacing directly to FPGA-based pattern generators and comparators. Use Value: Echo clocks (CQ/CQ) and 1-cycle latency mode ensure sub-nanosecond timing alignment between stimulus and response paths. |
| Telecom Baseband Processing | AI Accelerator On-Chip Cache Extension |
Use Scenario: Inter-processor communication buffer between DSP clusters in 5G massive MIMO baseband units. IC Role / Device Role / Timing Role: Shared memory resource accessed concurrently by multiple processing engines via dedicated read/write ports. Use Value: Full data coherency and synchronous self-timed writes guarantee consistent data visibility across distributed compute nodes. | Use Scenario: Off-chip L3 cache extension for edge AI accelerators handling real-time vision inference workloads. IC Role / Device Role / Timing Role: Low-latency, high-bandwidth memory supplementing on-die SRAM capacity for weight/activation storage. Use Value: 72-Mbit density in compact FBGA-165 enables high-capacity, low-pin-count expansion without sacrificing bandwidth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C36256A-333BIN | 2M × 36 QDR II+ SRAM; 333 MHz; supports 1.5 V I/O only (no 1.8 V VDDQ option) | Lacks DOFF-configurable latency and echo clock outputs; requires external deskew compensation | Select when system uses strict 1.5 V I/O and latency is fixed at 1 cycle; verify controller compatibility with missing CQ/CQ signals. |
| IS45S32800J-333BLI | 2M × 36 QDR II SRAM; identical 333 MHz spec and FBGA-165 package; no JTAG support | Missing IEEE 1149.1 boundary scan; same pinout but BWS mapping differs (BWS[1:0] only) | Choose for cost-sensitive deployments where JTAG testability is not required and write granularity matches design needs. |
Compared with AS7C36256A-333BIN and IS45S32800J-333BLI, CY7C1515KV18 uniquely delivers DOFF-selectable latency, integrated echo clocks for timing margin recovery, and full JTAG testability - critical for high-reliability telecom and test equipment designs.
Availability
CY7C1515KV18 is available at Aetrix Electronics and suitable for packet buffering in network switches, high-speed test instrumentation, and telecom baseband processing requiring stable component supply across extended production lifecycles.
Supply support for CY7C1515KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1515KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory interfacing in networking and test equipment where concurrent read/write bandwidth and timing precision are critical.
FAQ
What is the function of the DOFF pin on CY7C1515KV18?
The DOFF (Data Output OFF) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for higher sustained bandwidth; when LOW, it selects 1-cycle latency for minimal access delay. This setting directly affects timing budget allocation in the memory controller and must be held stable during operation - it is not dynamically switchable mid-burst.
How does the CY7C1515KV18 handle byte-level writes?
It uses four active-low byte write select signals (BWS[3:0]), each enabling write to a specific 9-bit byte lane: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. Unselected bytes retain prior contents, enabling partial-word updates without read-modify-write cycles - essential for protocol header manipulation in packet processing.
Can CY7C1515KV18 operate with only a single clock domain?
Yes - when C and C are tied together and driven by the same source as K and K, the device operates in single-clock mode. In this configuration, Q[35:0] data is clocked by K/K instead of C/C, simplifying clock distribution at the cost of reduced timing margin; echo clocks (CQ/CQ) remain functional for data capture alignment.
What is the purpose of the NC/144M and NC/288M pins?
These are no-connect pins not bonded to the die; they may be left floating or tied to any valid voltage level (VSS, VDD, or VDDQ) per board layout requirements. They serve as thermal or mechanical relief pads in the FBGA package and have no electrical function - their state does not affect device operation or timing behavior.
CY7C1515KV18-333BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1515KV18-333BZXC FAQ
1.How can I place an order for CY7C1515KV18-333BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1515KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1515KV18-333BZXC reliable?
The price and inventory of CY7C1515KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1515KV18-333BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1515KV18-333BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1515KV18-333BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1515KV18-333BZXC?
CY7C1515KV18-333BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1515KV18-333BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1515KV18-333BZXC?
For technical support, including CY7C1515KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1515KV18-333BZXC requirements.
6.How does Aetrix verify that CY7C1515KV18-333BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1515KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1515KV18-333BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1515KV18-333BZXC?
All CY7C1515KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1515KV18-333BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1515KV18-333BZXC part is unused and in its original packaging.
Return procedure for CY7C1515KV18-333BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1515KV18-333BZXC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

