Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1518AV18-250BZC

Part No.:
CY7C1518AV18-250BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1518AV18-250BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,754

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1518AV18 from Cypress Semiconductor is a 72-Mbit (4 M × 18) DDR-II synchronous SRAM with two-word burst architecture, 300-MHz clock support, 1.8-V core supply, and HSTL I/O. It uses dual input clocks (K/K̄) for address/data capture and dual output clocks (C/C̄) with echo clocks (CQ/CQ̄) to minimize skew in high-speed memory subsystems. Designed for bandwidth-intensive networking and telecom line cards requiring deterministic low-latency access.

For engineers reviewing the CY7C1518AV18 datasheet, CY7C1518AV18 pinout, CY7C1518AV18 application, or CY7C1518AV18 equivalent, key selection criteria include DDR-II timing compliance, DLL-enabled 1.5-cycle read latency, HSTL-18 I/O drive capability, and 165-ball FBGA (15 × 17 mm) package compatibility with high-density PCB layouts.

Technical Context

The CY7C1518AV18 implements a synchronous pipelined SRAM core with integrated DDR-II peripheral logic, including a 1-bit burst counter that increments A0 to deliver two consecutive 18-bit words per access. All synchronous inputs (address, R/W, BWS, LD) are registered on rising edges of K/K̄, while data outputs are edge-aligned to C/C̄ or K/K̄ in single-clock mode.

It supports both DLL-on (1.5-cycle read latency, up to 300 MHz) and DLL-off (1-cycle read latency, up to 167 MHz DDR-I operation) modes. Echo clocks CQ/CQ̄ are phase-synchronized to C/C̄ and enable source-synchronous data capture without board-level trace length matching across multiple devices.

Key Specifications

ParameterValue and Actual Design Meaning
Density72 Mbit (4 M × 18 organization), enabling compact high-bandwidth buffer storage
Max Clock Frequency300 MHz (K/K̄), supporting 600 MT/s effective data rate via DDR interface
Read Latency1.5 cycles with DLL enabled; 1 cycle with DLL disabled - directly impacts pipeline depth in controller design
I/O StandardHSTL Class I (1.8 V), with programmable output drive strength and ZQ impedance calibration
Supply VoltagesVDD = 1.8 V ±0.1 V (core); VDDQ = 1.8 V ±0.1 V (I/O); VREF = 0.9 V nominal reference
Package165-ball FBGA (15 × 17 × 1.4 mm), 0.8-mm ball pitch, RoHS-compliant
JTAG SupportIEEE 1149.1 compliant TAP controller for boundary scan testing and debug

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm footprint, 1.4 mm height, 0.8 mm ball pitch, JEDEC MO-245 compliant.

Pin/TerminalCircuit RoleDesign Meaning
DQ[17:0]Synchronous bidirectional data busShares pins for read/write; driven on C/C̄ rising edges during reads; sampled on K/K̄ rising edges during writes
K, K̄Primary input clocksRising edges latch all synchronous inputs (address, R/W, BWS, LD); define burst start and write timing
C, C̄Output data clocksControl timing of DQ[17:0] output edges; used with CQ/CQ̄ for deskewed system-level capture
CQ, CQ̄Echo clocksFree-running, phase-locked to C/C̄; provide source-synchronous timing reference for external FPGA/ASIC capture logic
BWS[1:0]Byte write selectActive-low signals controlling DQ[8:0] (BWS0) and DQ[17:9] (BWS1); enable partial-word writes without read-modify-write
LDLoad strobeActive-low signal initiating each burst transaction; defines address and R/W direction for the upcoming two-word access
ZQImpedance calibration inputConnects to external 240 Ω resistor to ground to calibrate output driver impedance to 48 Ω ±10% for HSTL-18 bus termination
DOFFDLL disable controlActive-low pin; grounding disables DLL, reverting device to DDR-I timing and limiting max frequency to 167 MHz

Key Features

FeatureDesign Value
Two-word burst architectureReduces address bus toggling by 50% versus single-word SRAMs, lowering system EMI and controller overhead
Dual echo clocks (CQ/CQ̄)Eliminates need for board-level trace length matching between clock and data lines in multi-device memory channels
On-die DLL with selectable enable/disableEnables 1.5-cycle latency at 300 MHz or 1-cycle latency at lower frequencies - simplifies timing closure across speed grades
Programmable HSTL output driveSupports variable slew rate and drive strength tuning to match PCB stackup and reduce simultaneous switching noise
ZQ impedance calibrationCompensates for process/voltage/temperature drift to maintain 48 Ω output impedance tolerance within ±10%

Applications

Packet Buffering in Switch ASICsLine Card Memory in Telecom Equipment

Use Scenario: High-throughput packet buffering in Layer 2/3 Ethernet switches handling 10 GbE+ traffic with strict latency budgets.

IC Role / Device Role / Timing Role: Primary data buffer SRAM interfacing directly with switch fabric controller; provides deterministic 1.5-cycle read latency under DLL-on mode.

Use Value: Two-word burst reduces controller address bus utilization by half, freeing bandwidth for metadata processing and flow control logic.

Use Scenario: Shared memory pool for distributed forwarding engines in carrier-grade optical transport systems (OTN/SDH).

IC Role / Device Role / Timing Role: Synchronous DDR-II SRAM acting as shared packet store between multiple line interface units and central scheduler.

Use Value: Echo clocks (CQ/CQ̄) allow precise source-synchronous capture across 12+ parallel SRAM devices without global clock tree routing.

Baseband Processing in Wireless BTSReal-Time Video Frame Buffering

Use Scenario: Inter-stage buffering between digital pre-distortion (DPD) and modulation blocks in 5G massive MIMO base stations.

IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory supporting real-time symbol-level processing pipelines.

Use Value: DLL-off mode enables 1-cycle latency at 167 MHz for legacy controller compatibility while maintaining DDR-I power efficiency.

Use Scenario: Dual-port frame buffer for HD/4K video processing pipelines in broadcast encoders and medical imaging systems.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM serving as ping-pong buffer between video ingest and compression engines.

Use Value: 600 MT/s effective throughput sustains >4.3 GB/s aggregate bandwidth required for uncompressed 4K60 YUV422 streams.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV102418BLL-10BLISingle-data-rate (SDR) 18-Mbit SRAM; 10 ns access, no DDR interface or DLLLacks burst, echo clocks, and DDR timing - suitable only for non-pipelined, lower-bandwidth control-plane buffersSelect when system controller lacks DDR timing capability or requires simpler timing closure at <100 MHz
MT47H64M16HR-25EDDR2 SDRAM (1 Gbit); 250 MHz clock, 500 MHz data rate; requires refresh, command decoding, and longer latencyHigher density but non-deterministic latency due to refresh and bank conflicts; not pin-compatibleChoose for cost-sensitive, high-capacity applications where latency predictability is secondary to memory size

Compared with IS61WV102418BLL-10BLI and MT47H64M16HR-25E, the CY7C1518AV18 uniquely delivers deterministic sub-2-cycle latency, DDR-II burst efficiency, and echo-clock–based source-synchronous timing - critical for real-time packet and signal processing where jitter and pipeline stalls must be eliminated.

Availability

CY7C1518AV18 is available at Aetrix Electronics and suitable for packet buffering in network switches, line card memory in telecom infrastructure, and baseband processing in wireless base stations requiring stable component supply and long-term industrial availability.

Supply support for CY7C1518AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C15xxAV18 family was designed specifically for deterministic, high-bandwidth memory subsystems in networking and telecom equipment where DDR-II timing predictability, echo-clock synchronization, and low-latency burst access are mandatory.

FAQ

What is the minimum setup/hold time requirement for LD relative to K clock?

The LD signal must meet a 1.2 ns setup time and 0.8 ns hold time relative to the rising edge of K, as specified in the AC Electrical Characteristics table (Rev. *F, Page 20). These values are guaranteed across commercial temperature range (0°C to +70°C) and 1.8 V ±5% supply conditions. Violating these margins risks metastability in burst initiation and may cause address or R/W sampling errors.

Can C and C̄ be driven from the same differential clock source as K and K̄?

Yes - C and C̄ may be driven from the same differential clock generator as K and K̄, provided the inter-pair skew between (C/C̄) and (K/K̄) remains ≤150 ps. The device does not require independent clock domains; however, using separate sources improves deskew margin when driving multiple SRAMs from a single controller.

How does ZQ calibration affect signal integrity on the DQ bus?

ZQ calibration adjusts output driver impedance to match the 48 Ω characteristic impedance of standard HSTL-18 transmission lines. Without calibration, output impedance variation (±20%) causes reflections and eye closure at 600 MT/s. Calibration ensures return loss >15 dB and maintains >0.4 V noise margin at the receiver under worst-case PVT conditions.

Is the CY7C1518AV18 compatible with DDR3 or DDR4 controllers?

No - it is not electrically or protocol-compatible with DDR3/DDR4 controllers. It implements a proprietary DDR-II SRAM interface with fixed two-word burst, synchronous load (LD), and echo clocks (CQ/CQ̄). Controllers must implement Cypress's specific command encoding, timing, and clocking scheme as defined in Document 001-06982.

CY7C1518AV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1518AV18-250BZC FAQ

1.How can I place an order for CY7C1518AV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1518AV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1518AV18-250BZC reliable?

The price and inventory of CY7C1518AV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518AV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1518AV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1518AV18-250BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1518AV18-250BZC?

CY7C1518AV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1518AV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1518AV18-250BZC?

For technical support, including CY7C1518AV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518AV18-250BZC requirements.

6.How does Aetrix verify that CY7C1518AV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1518AV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518AV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1518AV18-250BZC?

All CY7C1518AV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518AV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1518AV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1518AV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1518AV18-250BZC Tags

  • CY7C1518AV18-250BZC
  • CY7C1518AV18-250BZC PDF
  • CY7C1518AV18-250BZC Datasheet
  • CY7C1518AV18-250BZC Specifications
  • CY7C1518AV18-250BZC Images
  • Infineon Technologies
  • Infineon Technologies CY7C1518AV18-250BZC
  • Buy CY7C1518AV18-250BZC
  • CY7C1518AV18-250BZC Price
  • CY7C1518AV18-250BZC Distributor
  • CY7C1518AV18-250BZC Supplier
  • CY7C1518AV18-250BZC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER