Infineon Technologies CY7C1518JV18-300BZC
- Part No.:
- CY7C1518JV18-300BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1518JV18-300BZC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1518JV18-300BZC from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II SRAM organized as 4M × 18, operating at 300 MHz with 1.5-cycle read latency (DLL enabled), 1.8V core supply, HSTL I/O, and 165-ball FBGA (15 × 17 × 1.4 mm). It delivers 600 MT/s effective data rate via double-data-rate transfers synchronized to K/K and C/C clock pairs, and is used in high-bandwidth packet buffering for network switches and baseband processing in wireless infrastructure.
For engineers reviewing the CY7C1518JV18-300BZC datasheet, CY7C1518JV18-300BZC pinout, CY7C1518JV18-300BZC application, or CY7C1518JV18-300BZC equivalent, key selection criteria include DDR II burst timing compliance, DLL-enabled latency mode, HSTL-18 output drive matching, echo clock (CQ/CQ) synchronization capability, and 2-word burst address incrementing behavior.
Technical Context
The device implements a synchronous pipelined architecture with dual-clock domain separation: K/K clocks control all input registers (address, R/W, LD, BWS), while C/C clocks govern output register timing for Q[17:0] and echo clocks CQ/CQ. Burst logic uses A0 as LSB input to generate two sequential 18-bit words per access.
Internally, it features a Delay Lock Loop (DLL) that aligns CQ/CQ edges to C/C for precise data capture; when DOFF = LOW, DLL disables and operation reverts to DDR I mode with 1-cycle latency and ≤167 MHz max frequency. All data I/O shares DQ[17:0] pins with tristate control on deselection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (4M × 18 configuration) |
| Max Clock Frequency | 300 MHz K/K input clock - sets 600 MT/s effective bandwidth |
| Read Latency | 1.5 cycles with DLL enabled; 1 cycle with DOFF = LOW |
| I/O Standard | HSTL Class I (1.8V VDDQ, 1.4–1.8V adjustable output swing) |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm, 0.8 mm pitch) |
| Power Supply | 1.8V core (VDD), 1.8V I/O (VDDQ), separate VSS planes |
| Burst Length | Fixed 2-word linear burst - reduces external address bus toggling by 50% |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZC suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data I/O | Shares pins for read output and write input; driven on rising edges of C/C (or K/K in single-clock mode); auto-tristated after read deselect |
| K / K | Positive/negative input clock pair | Captures all synchronous inputs (A, R/W, LD, BWS); defines access initiation edge; supports DDR timing with 180° phase relationship |
| C / C | Positive/negative output clock pair | Controls timing of Q[17:0] and CQ/CQ outputs; enables board-level flight-time deskewing across multiple SRAMs |
| CQ / CQ | Output echo clocks referenced to C/C | Free-running, phase-aligned copies of C/C; simplify system-level data capture without external delay compensation |
| LD | Synchronous load strobe | Active-Low signal defining start of bus cycle; latches address and R/W state on next K edge; initiates 2-word burst sequence |
| BWS0 / BWS1 | Byte write select (active-low) | Sampled on K/K edges; BWS0 controls D[8:0], BWS1 controls D[17:9]; enables partial-word writes without read-modify-write overhead |
| DOFF | DLL disable control | Active-Low pin; ties DLL off to revert to DDR I timing (1-cycle latency, ≤167 MHz); requires external 10 kΩ pull-up for normal operation |
| ZQ | Output impedance calibration reference | Connects to external resistor to ground (RQ); calibrates DQ/CQ output driver strength to 0.2 × RQ; cannot be left floating or tied to GND |
Key Features
| Feature | Design Value |
|---|---|
| DDR II 2-word burst architecture | Halves external address bus frequency vs. non-burst SRAMs - reduces PCB routing congestion and timing closure effort |
| Programmable DLL with DOFF control | Enables dynamic latency mode selection: 1.5-cycle (high-speed) or 1-cycle (legacy DDR I compatibility) operation |
| HSTL-18 I/O with variable drive strength | Supports impedance-matched signaling up to 300 MHz; ZQ calibration ensures consistent signal integrity across voltage/temperature |
| Echo clock outputs (CQ/CQ) | Eliminates need for external delay elements in high-speed memory controllers - simplifies capture timing at FPGA/ASIC inputs |
| JTAG 1149.1 test access port | Enables boundary-scan testing and in-system debug without requiring additional test pads or probes |
Applications
| Network Packet Buffering | Wireless Baseband Processing |
|---|---|
|
Use Scenario: Line-rate buffering of Ethernet frames in Layer 2/L3 switches with deep queuing requirements. IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory for ingress/egress packet queues with deterministic burst access. Use Value: 600 MT/s bandwidth and 1.5-cycle latency enable full-line-rate 10Gbps switching without backpressure stalls. |
Use Scenario: Real-time symbol storage and FFT windowing in LTE eNodeB digital front-end processing. IC Role / Device Role / Timing Role: Synchronous burst-access buffer interfacing directly to FPGA-based DSP engines via HSTL-18 buses. Use Value: Echo clocks (CQ/CQ) align read data precisely to FPGA sampling clocks - eliminates setup/hold violations at 300 MHz. |
| Industrial Video Frame Storage | Test Equipment Pattern Memory |
|
Use Scenario: Dual-port frame buffering in 4K60 machine vision cameras with rolling shutter correction. IC Role / Device Role / Timing Role: Single-clock-mode DDR II SRAM acting as ping-pong buffer between image sensor interface and compression engine. Use Value: 2-word burst reduces address bus transitions by half - lowers EMI and simplifies timing margining for 72-bit parallel video paths. |
Use Scenario: High-speed stimulus/response memory in automated test equipment (ATE) for SoC validation. IC Role / Device Role / Timing Role: Deterministic-latency memory for pattern generation and expected-response comparison at 300 MHz clock rates. Use Value: DLL-controlled 1.5-cycle latency provides predictable timing windows for comparator alignment - critical for sub-nanosecond jitter tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV102418BLL-150TQLI | 1024K × 18, 150 MHz max, no DLL, single-ended LVTTL I/O, 100-pin TQFP | Limited to ≤150 MHz; lacks echo clocks and HSTL; suitable only for cost-sensitive, lower-bandwidth systems | Select when bandwidth < 300 MT/s and PCB space allows larger TQFP; avoid for DDR II timing-critical designs |
| Renesas R1EX24012AS0C-000B | 4M × 18, 250 MHz max, DDR II with DLL, HSTL-18, 165-ball FBGA, but no CQ/CQ echo clocks | Missing echo clock outputs - requires external delay tuning for multi-device data capture | Choose if echo clock functionality is not required and 250 MHz suffices; verify controller-side deskew capability |
Compared with IS61WV102418BLL-150TQLI and R1EX24012AS0C-000B, CY7C1518JV18-300BZC uniquely combines 300 MHz operation, DLL-adjustable latency, and integrated CQ/CQ echo clocks - enabling plug-and-play timing closure in high-density DDR II memory subsystems without external compensation.
Availability
CY7C1518JV18-300BZC is available at Aetrix Electronics and suitable for network switching, wireless infrastructure, industrial imaging, and automated test equipment requiring stable component supply, long-lifecycle support, and guaranteed Pb-free FBGA sourcing.
Supply support for CY7C1518JV18-300BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with headquarters in San Jose, CA.
This device belongs to Cypress's DDR II synchronous SRAM product line, engineered specifically for deterministic-latency, high-bandwidth buffering in packet-switched and real-time signal processing systems where DDR I timing margins are insufficient.
FAQ
What is the function of the DOFF pin, and how does it affect timing?
The DOFF pin disables the internal Delay Lock Loop when pulled LOW. In this state, the device operates in DDR I mode with 1-cycle read latency and a maximum frequency of 167 MHz. When DOFF is HIGH (default), DLL is active and enables 1.5-cycle latency at full 300 MHz operation. The timing parameters differ significantly between modes - DDR I timing tables apply only when DOFF = LOW.
Can CY7C1518JV18-300BZC operate with only K/K clocks, without C/C?
Yes - the device supports single-clock mode. Tie C and C HIGH at power-on to configure the device to use K/K for both input registration and output timing. In this mode, Q[17:0] and CQ/CQ are driven on K/K edges, eliminating the need for separate output clocks. All timing parameters remain valid, but echo clock benefits and board-level deskew capability are lost.
How does ZQ calibration impact signal integrity?
ZQ calibration adjusts the output driver strength of DQ[17:0] and CQ/CQ pins to match the system data bus impedance. Connecting ZQ to a precision resistor (RQ) to ground sets output impedance to 0.2 × RQ. This minimizes reflections and ensures consistent edge rates across voltage and temperature - critical for maintaining eye opening at 600 MT/s. Leaving ZQ unconnected or tying it to GND violates specification and degrades timing margins.
Is the 165-ball FBGA package compatible with standard reflow profiles?
Yes - the BZC suffix denotes a RoHS-compliant, Pb-free 165-ball FBGA package qualified for standard lead-free reflow profiles (J-STD-020D). Peak temperature must not exceed 260°C, with time above liquidus (TAL) limited to 60–150 seconds. Board layout must follow Cypress's recommended pad geometry, solder mask clearance, and thermal relief guidelines to prevent voiding and mechanical stress on solder joints.
CY7C1518JV18-300BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1518JV18-300BZC FAQ
1.How can I place an order for CY7C1518JV18-300BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1518JV18-300BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1518JV18-300BZC reliable?
The price and inventory of CY7C1518JV18-300BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518JV18-300BZC is usually 5 days.
3.What payment methods are accepted for CY7C1518JV18-300BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1518JV18-300BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1518JV18-300BZC?
CY7C1518JV18-300BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1518JV18-300BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1518JV18-300BZC?
For technical support, including CY7C1518JV18-300BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518JV18-300BZC requirements.
6.How does Aetrix verify that CY7C1518JV18-300BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1518JV18-300BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518JV18-300BZC meets industry standards.
7.What is the process for return or replacement of CY7C1518JV18-300BZC?
All CY7C1518JV18-300BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518JV18-300BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1518JV18-300BZC part is unused and in its original packaging.
Return procedure for CY7C1518JV18-300BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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