Infineon Technologies CY7C1518JV18-300BZXC
- Part No.:
- CY7C1518JV18-300BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1518JV18-300BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1518JV18-300BZXC from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous pipelined DDR II SRAM with 300 MHz clock operation, 1.5-cycle read latency (DLL enabled), HSTL I/O interface, and 165-ball FBGA (15 × 17 × 1.4 mm) package. It delivers 600 MT/s data throughput via double-data-rate transfers synchronized to K/K and C/C clocks, and supports burst-of-two reads/writes for high-bandwidth networking buffer applications.
For engineers reviewing the CY7C1518JV18-300BZXC datasheet, CY7C1518JV18-300BZXC pinout, CY7C1518JV18-300BZXC application, or CY7C1518JV18-300BZXC equivalent, key selection criteria include DDR II timing compliance, DLL-enabled latency mode, HSTL-18 drive capability, 1.8V core/VDDQ supply, and FBGA thermal/mechanical compatibility in multi-chip memory subsystems.
Technical Context
This SRAM implements a synchronous pipelined architecture with dual-clock domain control: K/K clocks register all inputs (address, R/W, LD, BWS), while C/C clocks govern output data timing and echo clock generation. The internal burst counter uses A0 to sequence two consecutive 18-bit words per access.
It integrates a Delay Lock Loop (DLL) for precise data-eye alignment at 300 MHz, enabling 1.5-cycle read latency; when DOFF is asserted low, it reverts to DDR I behavior with 1-cycle latency up to 167 MHz. Echo clocks CQ/CQ are phase-aligned to C/C and referenced to output data edges-critical for source-synchronous capture in high-speed SerDes or packet buffer designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (4M × 18 organization); supports depth expansion with identical parts |
| Max Clock Frequency | 300 MHz K/K input; enables 600 MT/s effective data rate via DDR |
| Read Latency | 1.5 cycles with DLL enabled; 1 cycle with DOFF = LOW (DDR I mode) |
| I/O Standard | HSTL Class I (1.8V VDDQ); 1.4V–VDDQ programmable output voltage range |
| Supply Voltages | VDD = 1.8V ±0.1V (core); VDDQ = 1.8V ±0.1V (I/O); VREF = 0.9V nominal |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm); 0.8 mm ball pitch; RoHS-compliant |
| JTAG Support | IEEE 1149.1 compliant TAP controller for boundary scan testing |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, JEDEC MO-270AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data bus | 18-bit DDR data path; latched on K/K rising edges (write), driven on C/C rising edges (read); tristated automatically after deselect |
| K / K | Positive/negative input clock pair | Captures all synchronous inputs (address, R/W, LD, BWS); defines access initiation edge; used for output timing in single-clock mode |
| C / C | Positive/negative output data clock pair | Controls Q[17:0] output timing; enables flight-time deskewing across multiple SRAMs in parallel memory systems |
| CQ / CQ | Output echo clocks | Free-running, phase-aligned copies of C/C; referenced to Q[17:0] edges for reliable source-synchronous latch at controller |
| LD | Load strobe | Active-low synchronous signal defining start of burst transaction; samples address and R/W on next K edge |
| BWS[1:0] | Byte write select | Active-low controls write masking: BWS0 → D[8:0], BWS1 → D[17:9]; enables partial-word writes without read-modify-write overhead |
| DOFF | DLL disable control | Active-low disables internal DLL; forces DDR I timing mode (1-cycle latency, ≤167 MHz max) |
| ZQ | Impedance calibration reference | Connects to external 240 Ω resistor to GND; calibrates output driver impedance to 0.2 × RQ (~48 Ω) for HSTL bus matching |
Key Features
| Feature | Design Value |
|---|---|
| 2-word synchronous burst architecture | Reduces address bus toggling by 50% per transaction; improves system-level timing margin and routing density |
| Programmable DLL with DOFF pin | Enables seamless transition between DDR II (1.5-cycle latency @ 300 MHz) and DDR I (1-cycle latency @ ≤167 MHz) modes |
| HSTL-18 I/O with variable drive strength | Supports 1.4V–1.8V output swing; matches standard HSTL-18 bus loads without external termination resistors |
| Source-synchronous echo clocks (CQ/CQ) | Eliminates need for board-level trace length matching between data and clock; simplifies PCB layout for >300 MHz interfaces |
| JTAG 1149.1 test access port | Enables in-system boundary scan validation of interconnect integrity in high-density memory modules |
Applications
| Packet Buffer in 10G Ethernet Switch ASIC | Line Card Memory for Optical Transport (OTN) |
|---|---|
Use Scenario: Stores ingress/egress packet headers and payload fragments in real time during line-rate forwarding. IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer interfaced directly to switch fabric controller via DDR II bus. Use Value: 600 MT/s bandwidth and 1.5-cycle DLL-aligned read latency ensure zero packet loss at full 10G line rate with deterministic queuing delay. | Use Scenario: Buffers OTU2/OTU3 frame segments during multiplexing/demultiplexing in DWDM line cards. IC Role / Device Role / Timing Role: Synchronous burst SRAM providing jitter-tolerant, depth-expandable frame storage aligned to SONET/SDH clock domains. Use Value: CQ/CQ echo clocks enable precise source-synchronous capture at framer ASIC, eliminating setup/hold violations across 15+ inch backplane traces. |
| Baseband Processing Memory in LTE eNodeB | Real-Time Video Frame Buffer for Broadcast Encoder |
Use Scenario: Holds interleaved turbo decoder soft-output metrics during iterative decoding cycles in FPGA-based baseband processing. IC Role / Device Role / Timing Role: Low-latency, burst-access memory mapped to FPGA DDR II controller for parallel metric update operations. Use Value: DLL-enabled 1.5-cycle latency and HSTL-18 drive reduce FPGA I/O resource usage and simplify timing closure for 200+ MHz memory interface. | Use Scenario: Stores uncompressed 4:2:2 YUV video frames (1920×1080@60fps) for real-time color space conversion and compression. IC Role / Device Role / Timing Role: Dual-port-capable burst SRAM acting as ping-pong frame buffer synchronized to pixel clock and encoder engine. Use Value: 165-ball FBGA footprint and thermal profile support conduction-cooled module integration; 1.8V supplies align with low-power video SoC power domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV102418BLL-15BLI | 512K × 18, 15 ns async access; no DDR, no DLL, no echo clocks; 3.3V core/I/O | Lower bandwidth, higher latency; suited for legacy control-plane buffers, not line-rate data paths | Select only if system lacks DDR timing infrastructure and operates below 100 MHz sustained bandwidth |
| Renesas R1EX24012AS0C-000A# | 72-Mbit DDR II SRAM (4M × 18); 333 MHz max; supports 1.25-cycle latency; different FBGA pinout (165-ball, non-pin-compatible) | Higher frequency headroom but requires PCB redesign; lacks ZQ calibration and JTAG TAP | Choose only when 333 MHz operation and tighter latency are required, and board revision is feasible |
Compared with IS61WV102418BLL-15BLI and R1EX24012AS0C-000A#, CY7C1518JV18-300BZXC uniquely combines DLL-controlled 1.5-cycle latency, HSTL-18 impedance programmability, and CQ/CQ echo clocks-enabling robust 300 MHz DDR II operation without external timing compensation or layout tuning.
Availability
CY7C1518JV18-300BZXC is available at Aetrix Electronics and suitable for 10G Ethernet switching, OTN line card design, LTE baseband processing, and broadcast video encoding requiring stable component supply, long-lifecycle assurance, and traceable sourcing.
Supply support for CY7C1518JV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with emphasis on signal integrity and timing precision.
The CY7C15xxJ series targets high-speed packet and frame buffering in telecom infrastructure, delivering DDR II SRAMs optimized for deterministic latency, source-synchronous timing, and HSTL bus compatibility.
FAQ
What is the function of the DOFF pin, and how does it affect timing?
The DOFF pin disables the internal Delay Lock Loop when pulled LOW. In this state, the device operates in DDR I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. When DOFF is HIGH, DLL is active, enabling 1.5-cycle latency and full 300 MHz operation. The timing parameters differ significantly between modes-designers must select AC timing tables accordingly.
Can CY7C1518JV18-300BZXC operate with only K/K clocks, without C/C?
Yes. When C and C are tied HIGH at power-on, the device enters single-clock mode: K/K clocks control both input registration and output timing. All timing parameters remain valid, and CQ/CQ echo clocks are generated relative to K/K instead of C/C. This mode eliminates need for separate output clock routing but forfeits flight-time deskew capability.
How is output impedance calibrated using the ZQ pin?
ZQ connects to an external 240 Ω resistor to ground. During power-up or ZQ calibration command, the device measures this reference and adjusts its HSTL output drivers to achieve 48 Ω (0.2 × 240 Ω) impedance. This ensures consistent signal integrity across VDDQ variations and temperature. ZQ must never be left floating or tied to GND.
Is the 165-ball FBGA package compatible with standard reflow profiles?
Yes. The CY7C1518JV18-300BZXC FBGA adheres to IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak 260°C). Its 0.8 mm ball pitch and 1.4 mm height allow placement with standard SMT equipment; recommended stencil aperture is 0.35 mm round with 50% area reduction for optimal solder paste release.
CY7C1518JV18-300BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1518JV18-300BZXC FAQ
1.How can I place an order for CY7C1518JV18-300BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1518JV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1518JV18-300BZXC reliable?
The price and inventory of CY7C1518JV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1518JV18-300BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1518JV18-300BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1518JV18-300BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1518JV18-300BZXC?
CY7C1518JV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1518JV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1518JV18-300BZXC?
For technical support, including CY7C1518JV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1518JV18-300BZXC requirements.
6.How does Aetrix verify that CY7C1518JV18-300BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1518JV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1518JV18-300BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1518JV18-300BZXC?
All CY7C1518JV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1518JV18-300BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1518JV18-300BZXC part is unused and in its original packaging.
Return procedure for CY7C1518JV18-300BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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